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1. 发明授权

US07288332B2 Conductive layer for biaxially oriented semiconductor film growth 失效
标题翻译：用于双轴取向半导体膜生长的导电层
公开(公告)号：US07288332B2
公开(公告)日：2007-10-30
申请号：US11245721
申请日：2005-10-06
申请人： Alp T. Findikoglu , Vladimir Matias
发明人： Alp T. Findikoglu , Vladimir Matias
IPC分类号： B32B19/00
CPC分类号： H01L31/022408 , C03C14/008 , C03C2214/32 , H01L31/022466 , H01L31/036 , H01L31/1884 , Y02E10/50
摘要： A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.
摘要翻译：用于双轴取向半导体膜生长的导电层和诸如光电检测器，光伏电池或发光二极管（LED）的薄膜半导体结构，其包括设置在导电层上的晶体学取向的半导体膜。薄膜半导体结构包括：基板; 沉积在基板上的第一电极; 以及外延沉积在第一电极上的半导体层。第一电极包括沉积在衬底上的模板层和外延沉积在模板层上的缓冲层。模板层包括导电并具有岩盐晶体结构的第一金属氮化物，并且缓冲层包括导电的第二金属氮化物。半导体层外延沉积在缓冲层上。还描述了制造这种薄膜半导体结构的方法。

2. 发明授权

US07582273B1 Preparation of carbon nanoparticles and carbon nitride from high nitrogen compound 失效
标题翻译：从高氮化合物制备碳纳米颗粒和碳氮化物
公开(公告)号：US07582273B1
公开(公告)日：2009-09-01
申请号：US11257546
申请日：2005-10-24
申请人： My Hang V. Huynh , Michael A. Hiskey
发明人： My Hang V. Huynh , Michael A. Hiskey
IPC分类号： C01B21/06 , C01C3/00 , C09B29/52 , C07D403/00
CPC分类号： C01B21/0605 , C01P2002/77 , C01P2004/03 , C01P2004/22 , C01P2004/32
摘要： The high-nitrogen compound 3,6-di(azido)-1,2,4,5-tetrazine (DiAT) was synthesized by a relatively simple method and used as a precursor for the preparation of carbon nanospheres and nanopolygons, and nitrogen-rich carbon nitrides.
摘要翻译：通过相对简单的方法合成高氮化合物3,6-二（叠氮基）-1,2,4,5-四嗪（DiAT），用作制备碳纳米球和纳米多孔的前体，富碳氮化物。

3. 发明申请

US20160153272A1 CASINGS FOR USE IN A SYSTEM FOR FRACTURING ROCK WITHIN A BORE 审中-公开
标题翻译：用于在钻孔中破碎岩石的系统中的使用
公开(公告)号：US20160153272A1
公开(公告)日：2016-06-02
申请号：US14905361
申请日：2014-07-15
申请人： LOS ALAMOS NATIONAL SECURITY, LLC
发明人： Jonathan Lee Mace , Lawrence E. Bronisz , David W. Steedman , Christopher Robert Brandy
IPC分类号： E21B43/263
CPC分类号： E21B43/263 , F42B3/02 , F42D1/22 , F42D3/00
摘要： In disclosed explosive units for use in a wellbore, the casing can include a tubular outer body comprising grooves, pockets, or other variances in thickness that create stress concentrations that promote shear and tensile fragmentation instead of ductile expansion of the casing, which can negatively impact permeability of a wellbore. In other embodiments, the casing can comprise non-ductile and/or reactive material which responds to explosive or high temperature loading by brittle failure, disintegration, melting, burning, and/or chemically reacting with the energetic materials and/or the borehole environment. Such embodiments can enhance the permeability of the wellbore after detonation.
摘要翻译：在用于井筒的公开的炸药单元中，套管可以包括管状外体，其包括凹槽，口袋或其它厚度变化，其产生促进剪切和拉伸断裂而不是壳体的延性膨胀的应力集中，这可能负面影响井眼渗透性。在其它实施例中，壳体可以包括非易失性和/或反应性材料，其通过脆性破坏，崩解，熔化，燃烧和/或与高能材料和/或钻孔环境发生化学反应来响应爆炸性或高温负荷。这样的实施例可以增强爆震后井筒的渗透性。

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