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1. 发明授权

US4871587A Process for coating an object with silicon carbide 失效
标题翻译：用碳化硅涂覆物体的工艺
公开(公告)号：US4871587A
公开(公告)日：1989-10-03
申请号：US230740
申请日：1988-08-08
申请人： Harry Levin
发明人： Harry Levin
IPC分类号： B01J19/02 , C01B33/029 , C01B33/03
CPC分类号： C01B33/03 , B01J19/02 , C01B33/029 , B01J2219/0204 , B01J2219/0209 , B01J2219/0272
摘要： A process for coating a carbon or graphite object with silicon carbide by contacting it with silicon liquid and vapor over various lengths of contact time. In the process, a stream of silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a co-reactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into a reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. The precursor gas is decomposed directly to silicon in the reaction chamber. A stream of any decomposition gas and any unreacted precursor gas from said reaction chamber is removed. The object within the reaction chamber is then contacted with silicon, and recovered after it has been coated with silicon carbide.
摘要翻译：一种用碳化硅将碳或石墨物体与硅液体和蒸气在不同长度的接触时间内接触的方法。在此过程中，低于所述气体的分解温度和共反应物，载体或稀释气体（例如氢）的低于气体的含硅前体材料流通过高发射率，薄的绝缘隔膜内的孔，进入在硅的熔点之上的反应室。薄隔膜的一面低于气体的分解温度，另一面暴露于反应室。前体气体在反应室中直接分解成硅。去除任何分解气体和来自所述反应室的任何未反应的前体气体。反应室内的物体然后与硅接触，并在其被碳化硅涂覆之后被回收。

2. 发明授权

US4751067A Process for making silicon from halosilanes and halosilicons 失效
标题翻译：从卤代硅烷和卤素硅制造硅的方法
公开(公告)号：US4751067A
公开(公告)日：1988-06-14
申请号：US932004
申请日：1986-11-18
申请人： Harry Levin
发明人： Harry Levin
IPC分类号： B01J19/02 , C01B33/029 , C01B33/03 , C01B33/02 , B01J8/08
CPC分类号： C01B33/03 , B01J19/02 , C01B33/029 , B01J2219/0204 , B01J2219/0209 , B01J2219/0272
摘要： A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.
摘要翻译：公开了一种用于通过合适的前体气体如硅烷（SiH 4）的热反应连续生产熔融的太阳能级纯度元素硅的反应器装置（10）。反应器装置（10）包括具有石墨或碳壁的细长反应器主体（32），其被加热到超过硅的熔融温度的温度。前体气体通过有效冷却的入口管组件（22）和相对薄的碳或石墨隔膜（44）进入反应器主体（32）。在一侧与冷却的入口（22）接触的隔膜（44）和另一侧的反应器（32）的加热内部，为进入反应器（32）的前体气体提供了急剧的温度梯度，以及使得入口管组件（22）的操作基本上没有堵塞。前体气体以基本平滑，基本上轴向的方式在反应器（32）中流动。在热反应的初始阶段形成的液态硅与石墨或碳壁反应，在壁上提供碳化硅涂层。碳化硅涂层反应器高度适用于长时间用于生产高纯度太阳能级硅。在反应器装置（10）中生产的液态硅（20）可以直接用于切克劳斯（Czochralski）或其它晶体成形设备。

3. 发明授权

US4343772A Thermal reactor 失效
标题翻译：热反应堆
公开(公告)号：US4343772A
公开(公告)日：1982-08-10
申请号：US126063
申请日：1980-02-29
申请人： Robert A. Administrator of the National Aeronautics and Space Administation, with respect to an invention of Frosch , Harry Levin , Larry B. Ford
发明人： Robert A. Administrator of the National Aeronautics and Space Administation, with respect to an invention of Frosch , Harry Levin , Larry B. Ford
IPC分类号： B01J6/00 , B01J19/24 , C01B33/029 , C22B26/00
CPC分类号： B01J19/2405 , B01J6/008 , C01B33/029 , B01J2219/00085 , B01J2219/00094 , B01J2219/0204 , F28D7/103
摘要： A thermal reactor apparatus and method of pyrolyticaly decomposing silane gas into liquid silicon product and hydrogen by-product gas is disclosed. The thermal reactor (1) has a reaction chamber (21) which is heated well above the decomposition temperature of silane. An injecter probe (100) introduces the silane gas tangentially into the reaction chamber (21) to form a first, outer, forwardly moving vortex (22) containing the liquid silicon product and a second, inner, rearwardly moving vortex (23) containing the by-product hydrogen gas. The liquid silicon in the first outer vortex (22) deposits onto the interior walls (28) of the reaction chamber (21) to form an equilibrium skull layer (26) which flows to the forward or bottom end of the reaction chamber where it is removed. The by-product hydrogen gas in the second inner vortex (23) is removed from the top or rear of the reaction chamber by a vortex finder (30).The injecter probe (100) which introduces the silane gas into the reaction chamber (21) is continually cooled by a cooling jacket (110) having water circulating therethrough to keep the temperature of the silane gas well below its decomposition temperature prior to being introduced into the reaction zone.
摘要翻译：公开了将硅烷气体分解成液体硅产物和氢副产物气体的热反应器装置和方法。热反应器（1）具有反应室（21），该反应室被高于硅烷的分解温度加热。注射器探针（100）将硅烷气体切向地引入反应室（21）中以形成包含液体硅产物的第一外部向外移动的涡流（22）和包含液体硅产物的第二，内部，向后旋转的涡流（23）副产氢。第一外部涡流（22）中的液体硅沉积到反应室（21）的内壁（28）上，以形成平衡颅骨层（26），其流过反应室的前端或底端删除。第二内涡流（23）中的副产物氢气通过涡流探测器（30）从反应室的顶部或后部除去。将硅烷气体引入反应室（21）中的注射器探针（100）通过具有循环通过其中的水的冷却套（110）连续地冷却，以在导入硅烷气体之前将其温度保持在低于其分解温度反应区。

4. 发明授权

US4668493A Process for making silicon 失效
标题翻译：制造硅的工艺
公开(公告)号：US4668493A
公开(公告)日：1987-05-26
申请号：US749661
申请日：1985-06-28
申请人： Harry Levin
发明人： Harry Levin
IPC分类号： B01J19/02 , C01B33/029 , C01B33/03 , C01B33/02 , B01J8/08
CPC分类号： B01J19/02 , C01B33/029 , C01B33/03 , B01J2219/0204 , B01J2219/0209 , B01J2219/0272 , Y10T117/1024
摘要： A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.
摘要翻译：公开了一种用于通过合适的前体气体如硅烷（SiH 4）的热反应连续生产熔融的太阳能级纯度元素硅的反应器装置（10）。反应器装置（10）包括具有石墨或碳壁的细长反应器主体（32），其被加热到超过硅的熔融温度的温度。前体气体通过有效冷却的入口管组件（22）和相对薄的碳或石墨隔膜（44）进入反应器主体（32）。在一侧与冷却的入口（22）接触的隔膜（44）和另一侧的反应器（32）的加热内部，为进入反应器（32）的前体气体提供了急剧的温度梯度，以及使得入口管组件（22）的操作基本上没有堵塞。前体气体以基本平滑，基本上轴向的方式在反应器（32）中流动。在热反应的初始阶段形成的液态硅与石墨或碳壁反应，在壁上提供碳化硅涂层。碳化硅涂层反应器高度适用于长时间用于生产高纯度太阳能级硅。在反应器装置（10）中生产的液态硅（20）可以直接用于切克劳斯（Czochralski）或其它晶体成形设备。

5. 发明授权

US5045398A Silicon carbide product 失效
标题翻译：碳化硅产品
公开(公告)号：US5045398A
公开(公告)日：1991-09-03
申请号：US462260
申请日：1990-01-09
申请人： Harry Levin
发明人： Harry Levin
IPC分类号： B01J19/02 , C01B33/029 , C01B33/03
CPC分类号： C01B33/03 , B01J19/02 , C01B33/029 , B01J2219/0204 , B01J2219/0209 , B01J2219/0272 , Y10T428/30
摘要： A silicon carbide product by converting carbon preforms by utilizing a reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.
摘要翻译：公开了通过利用适于通过合适的前体气体例如硅烷（SiH 4）的热反应连续生产熔融的太阳能级纯度元素硅的反应器装置（10）来转换碳预制件的碳化硅产品。反应器装置（10）包括具有石墨或碳壁的细长反应器主体（32），其被加热到超过硅的熔融温度的温度。前体气体通过有效冷却的入口管组件（22）和相对薄的碳或石墨隔膜（44）进入反应器主体（32）。在一侧与冷却的入口（22）接触的隔膜（44）和另一侧的反应器（32）的加热内部，为进入反应器（32）的前体气体提供了急剧的温度梯度，以及使得入口管组件（22）的操作基本上没有堵塞。前体气体以基本平滑，基本上轴向的方式在反应器（32）中流动。在热反应的初始阶段形成的液态硅与石墨或碳壁反应，在壁上提供碳化硅涂层。碳化硅涂层反应器高度适用于长时间用于生产高纯度太阳能级硅。在反应器装置（10）中生产的液态硅（20）可以直接用于切克劳斯（Czochralski）或其它晶体成形设备。

6. 发明授权

US4737348A Apparatus for making molten silicon 失效
标题翻译：用于制造熔融硅的设备
公开(公告)号：US4737348A
公开(公告)日：1988-04-12
申请号：US618712
申请日：1984-06-08
申请人： Harry Levin
发明人： Harry Levin
IPC分类号： B01J19/02 , C01B33/029 , C01B33/03 , C01B33/02
CPC分类号： C01B33/03 , B01J19/02 , C01B33/029 , B01J2219/0204 , B01J2219/0209 , B01J2219/0272 , Y10S117/90 , Y10T117/1056
摘要： A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.
摘要翻译：公开了一种用于通过合适的前体气体如硅烷（SiH 4）的热反应连续生产熔融的太阳能级纯度元素硅的反应器装置（10）。反应器装置（10）包括具有石墨或碳壁的细长反应器主体（32），其被加热到超过硅的熔融温度的温度。前体气体通过有效冷却的入口管组件（22）和相对薄的碳或石墨隔膜（44）进入反应器主体（32）。在一侧与冷却的入口（22）接触的隔膜（44）和另一侧的反应器（32）的加热内部，为进入反应器（32）的前体气体提供了急剧的温度梯度，以及使得入口管组件（22）的操作基本上没有堵塞。前体气体以基本平滑，基本上轴向的方式在反应器（32）中流动。在热反应的初始阶段形成的液态硅与石墨或碳壁反应，在壁上提供碳化硅涂层。碳化硅涂层反应器高度适用于长时间用于生产高纯度太阳能级硅。在反应器装置（10）中生产的液态硅（20）可以直接用于切克劳斯（Czochralski）或其它晶体成形设备。

7. 发明授权

US4900531A Converting a carbon preform object to a silicon carbide object 失效
标题翻译：将碳预制件物体转换成碳化硅物体
公开(公告)号：US4900531A
公开(公告)日：1990-02-13
申请号：US153126
申请日：1988-02-08
申请人： Harry Levin
发明人： Harry Levin
IPC分类号： B01J19/02 , C01B33/029 , C01B33/03
CPC分类号： B01J19/02 , C01B33/029 , C01B33/03 , B01J2219/0204 , B01J2219/0209 , B01J2219/0272
摘要： A process for converting in depth a carbon or graphite preform object to a silicon carbide object, silicon carbide/silicon object, silicon carbide/carbon-core object, or a silicon carbide/silicon/carbon-core object, by contacting it with silicon liquid and vapor over various lengths of contact time in a reaction chamber. In the process, a stream comprised of a silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a coreactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into the reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. Thus, the precursor gas is decomposed directly to silicon in the reaction chamber. Any stream of decomposition gas and any unreacted precursor gas from the reaction chamber is removed. A carbon or graphite preform object placed in the reaction chamber is contacted with the silicon. The carbon or graphite preform object is recovered from the reactor chamber after it has been converted to a desired silicon carbide, silicon and carbon composition.
摘要翻译：将碳或石墨预成型体物体深度转化为碳化硅物体，碳化硅/硅物体，碳化硅/碳芯物体或碳化硅/硅/碳 - 物 - 物体的方法，通过使其与硅液体以及在反应室中各种接触时间长度的蒸气。在此过程中，由低于所述气体的分解温度的气相中的含硅前体材料和共反应物，载体或稀释气体（例如氢）组成的物流通过高发射率，薄的绝缘隔膜内的孔，进入反应室高于硅熔点。薄隔膜的一面低于气体的分解温度，另一面暴露于反应室。因此，前体气体在反应室中直接分解成硅。去除任何分解气体流和来自反应室的任何未反应的前体气体。放置在反应室中的碳或石墨预成型物体与硅接触。将碳或石墨预制件物体转变成所需的碳化硅，硅和碳组成后，从反应室回收。

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