专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110116605A1 Method and Apparatus for Inspection of Materials 有权
标题翻译：材料检验方法和装置
公开(公告)号：US20110116605A1
公开(公告)日：2011-05-19
申请号：US12989035
申请日：2009-03-24
申请人： Ian Radley
发明人： Ian Radley
IPC分类号： H05G1/28
CPC分类号： G01N23/087 , G01N2223/402 , G01N2223/643
摘要： A method of and apparatus for obtaining radiation transmission data and especially an image of an object in such manner that allows some data about relative proportions of constituent materials to be derived is described. A radiation source and a radiation detector system able to resolve transmitted intensity across a plurality of frequencies within the spectrum of the source are used to produce transmitted intensity data for each such frequency. Measured data is compared numerically to a mass attenuation data library storing mass attenuation data, individually or collectively, for a small number of expected constituent component materials to fit each intensity data item to the relationship given by the exponential attenuation law: I/Io=exp[−(μ/ρ)ρt] in respect of the constituent component materials and derive therefrom an indication of relative proportions of each constituent component material. An image may be generated from the resolved transmitted intensity data.
摘要翻译：描述用于获得辐射传输数据的方法和装置，特别是以允许关于组成材料的相对比例得到的一些数据的方式获得对象的图像。使用能够消除源的光谱内的多个频率上的透射强度的辐射源和辐射探测器系统来产生每个这样的频率的发射强度数据。将测量的数据与数字地与存储质量衰减数据的质量衰减数据库进行比较，该数据库单独地或集体地存储少量预期构成组分材料，以将每个强度数据项拟合到由指数衰减定律给出的关系：I / Io = exp [ - （μ/＆rgr;）＆rgr; t]，并从中得出每种构成成分材料的相对比例的指示。可以从分辨的发射强度数据生成图像。

2. 发明申请

US20100327277A1 SEMICONDUCTOR DEVICE WITH A BULK SINGLE CRYSTAL ON A SUBSTRATE 有权
标题翻译：在衬底上具有块状单晶的半导体器件
公开(公告)号：US20100327277A1
公开(公告)日：2010-12-30
申请号：US12880458
申请日：2010-09-13
申请人： Arnab Basu , Max Robinson , Benjamin John Cantwell , Andy Brinkman
发明人： Arnab Basu , Max Robinson , Benjamin John Cantwell , Andy Brinkman
IPC分类号： H01L31/0296
CPC分类号： H01L31/115 , H01L31/1828 , Y02E10/543
摘要： Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.
摘要翻译：制造其中用至少部分用于处理信号的电子电路的衬底（10）制造的器件的装置和方法。在衬底上，直接在衬底（10）上或与中间的薄膜层或过渡区（12）形成体积单晶材料（14）。该设备的特定应用是用于辐射检测器。

3. 发明授权

US07634051B2 Imaging of materials 有权
标题翻译：材料成像
公开(公告)号：US07634051B2
公开(公告)日：2009-12-15
申请号：US12079657
申请日：2008-03-28
申请人： Max Robinson
发明人： Max Robinson
IPC分类号： A61B6/02
CPC分类号： G01V5/0058
摘要： An apparatus for generating and displaying an image of an object comprising a radiation source and a series of at least two linear detectors capable of resolving incident source radiation spectroscopically spaced therefrom to define a scanning zone therebetween; means to cause an object to move relative to and through the scanning zone in use; an image generation apparatus to generate at least a first image from the output of a first linear detector, a second image from the output of second linear detector, and a third image, such that each such image includes a representation of spectroscopically resolved incident radiation; an image display adapted successively to display at least the first, second and third such images and thus display the monocular movement parallax between the images.
摘要翻译：一种用于产生和显示物体的图像的装置，包括辐射源和一系列至少两个线性检测器，其能够分辨与其光谱间隔的入射源辐射，以在其间限定扫描区域; 意味着使物体相对于使用中的扫描区域移动并通过扫描区域; 图像生成装置，用于从第一线性检测器的输出，第二线性检测器的输出和第三图像生成至少第一图像，以及第三图像，使得每个这样的图像包括光谱分解的入射辐射的表示; 连续显示至少第一，第二和第三这样的图像的图像显示器，从而在图像之间显示单眼运动视差。

4. 发明申请

US20110024877A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110024877A1
公开(公告)日：2011-02-03
申请号：US12901780
申请日：2010-10-11
申请人： Arnab Basu , Max Robinson , Ben Cantwell , Andy Brinkman
发明人： Arnab Basu , Max Robinson , Ben Cantwell , Andy Brinkman
IPC分类号： H01L29/22
CPC分类号： H01L21/02568 , C30B11/00 , C30B29/48 , H01L21/02378 , H01L21/02381 , H01L21/02395 , H01L21/02474 , H01L21/02477 , H01L21/0248 , H01L21/02502 , H01L21/02505 , H01L21/0251 , H01L21/02562 , H01L21/02617 , Y10T428/21 , Y10T428/26 , Y10T428/266 , Y10T428/31678
摘要： A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.
摘要翻译：包括基板，直接设置并形成在基板上的中间层，过渡区域和设置并形成为过渡区域的延伸的II-VI族块状晶体材料的结构。过渡区域用于将结构从下面的衬底改变为本体晶体的结构。在制造方法中，可以使用类似的技术来生长过渡区域和体晶层。

5. 发明申请

US20110073034A1 APPARATUS AND PROCESS FOR CRYSTAL GROWTH 审中-公开
标题翻译：晶体生长的装置和工艺
公开(公告)号：US20110073034A1
公开(公告)日：2011-03-31
申请号：US12904434
申请日：2010-10-14
申请人： Arnab Basu , Max Robinson , Ben Cantwell , Andy Brinkman
发明人： Arnab Basu , Max Robinson , Ben Cantwell , Andy Brinkman
IPC分类号： C30B35/00 , C30B23/00
CPC分类号： C30B23/005 , C30B23/02 , C30B23/025 , C30B29/48 , C30B29/66 , Y10T117/10 , Y10T117/1004
摘要： The present invention relates to an apparatus for vapour phase crystal growth to produce multiple single crystals in one growth cycle comprising one central source chamber, a plurality of growth chambers, a plurality of passage means adapted for transport of vapour from the source chamber to the growth chambers, wherein the source chamber is thermally decoupled from the growth chambers.
摘要翻译：本发明涉及用于在一个生长循环中产生多个单晶的气相晶体生长的装置，包括一个中心源室，多个生长室，适于将蒸气从源室输送到生长的多个通道装置室，其中源室与生长室热分离。

6. 发明授权

US07693261B2 Method and apparatus for inspection of materials 有权
标题翻译：材料检验方法和装置
公开(公告)号：US07693261B2
公开(公告)日：2010-04-06
申请号：US12152863
申请日：2008-05-16
申请人： Max Robinson , Arnab Basu
发明人： Max Robinson , Arnab Basu
IPC分类号： G01N23/201
CPC分类号： G01N23/04 , G01N23/2076 , G01V5/0016
摘要： A method and apparatus for obtaining radiation transmission data including providing a radiation source, e.g., x-ray or gamma-ray source, and a radiation detector system, e.g., x-ray or gamma-ray detection system, spaced therefrom to define a scanning zone therebetween, the detector system capable of detecting and collecting spectroscopically resolvable information about incident radiation. Collecting a dataset of information about radiation incident including transmissivity of an object in the scanning zone at at least one scanning position from radiation transmitted through the object and received at the detector system. Resolving each dataset spectroscopically across a plurality of frequency bands within the spectrum of the source; at least one of the frequency bands corresponding to a characteristically scattered wavelength of a target species to be identified. The absence of or substantial reduction in a transmitted signal intensity at the frequency band is interpreted as the presence of the said target species.
摘要翻译：一种用于获得辐射传输数据的方法和装置，包括提供辐射源，例如x射线或γ射线源，以及辐射检测器系统，例如与其间隔开的x射线或γ射线检测系统，以限定扫描区域，检测器系统能够检测和收集关于入射辐射的光谱可分辨的信息。收集关于辐射入射的信息的数据集，其中包括在扫描区域中的物体在至少一个扫描位置处的透射率，从辐射透射通过物体并在检测器系统处接收。在光谱范围内的多个频带内光谱地分解每个数据集; 至少一个频带对应于待识别的目标物种的特征散射波长。在频带处的传输信号强度的不存在或实质上的减少被解释为所述目标物种的存在。

7. 发明申请

US20080315342A1 Semiconductor Device with a Bulk Single Crystal on a Substrate 有权
标题翻译：在基板上具有大块单晶的半导体器件
公开(公告)号：US20080315342A1
公开(公告)日：2008-12-25
申请号：US12158111
申请日：2006-12-21
申请人： Arnab Basu , Max Robinson , Ben Cantwell , Andy Brinkman
发明人： Arnab Basu , Max Robinson , Ben Cantwell , Andy Brinkman
IPC分类号： H01L31/0296 , H01L31/18
CPC分类号： H01L31/115 , H01L31/1828 , Y02E10/543
摘要： Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.
摘要翻译：制造其中用至少部分用于处理信号的电子电路的衬底（10）制造的器件的装置和方法。在衬底上，直接在衬底（10）上或与中间的薄膜层或过渡区（12）形成体积单晶材料（14）。该设备的特定应用是用于辐射检测器。

8. 发明申请

US20120045868A1 SEMICONDUCTOR DEVICE CONTACTS 有权
标题翻译：半导体器件联系人
公开(公告)号：US20120045868A1
公开(公告)日：2012-02-23
申请号：US13258849
申请日：2010-05-18
申请人： Mohamed Ayoub , Fabrice Dierre
发明人： Mohamed Ayoub , Fabrice Dierre
IPC分类号： H01L21/06
CPC分类号： H01L29/2203 , H01L29/45
摘要： A method of fabrication of electrical contact structures on a semiconductor material is described comprising the steps of: depositing an oxide of a desired contact material by a chemical electroless process on a face of the semiconductor material; and reducing the oxide via a chemical electroless process to produce a contact of the desired contact material. A method of fabrication of a semiconductor device incorporating such electrical contact structures and a semiconductor device incorporating such electrical contact structures are also described.
摘要翻译：描述了一种在半导体材料上制造电接触结构的方法，包括以下步骤：通过化学无电镀方法在半导体材料的表面上沉积所需接触材料的氧化物; 以及通过化学无电解方法还原氧化物以产生所需接触材料的接触。还描述了包括这种电接触结构的半导体器件的制造方法以及包含这种电接触结构的半导体器件。

9. 发明申请

US20090053453A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090053453A1
公开(公告)日：2009-02-26
申请号：US12158114
申请日：2006-12-21
申请人： Arnab Basu , Max Robinson , Ben Cantwell , Andy Brinkman
发明人： Arnab Basu , Max Robinson , Ben Cantwell , Andy Brinkman
IPC分类号： B32B9/04 , B32B3/02 , H01L21/363 , C23C14/34
CPC分类号： H01L21/02568 , C30B11/00 , C30B29/48 , H01L21/02378 , H01L21/02381 , H01L21/02395 , H01L21/02474 , H01L21/02477 , H01L21/0248 , H01L21/02502 , H01L21/02505 , H01L21/0251 , H01L21/02562 , H01L21/02617 , Y10T428/21 , Y10T428/26 , Y10T428/266 , Y10T428/31678
摘要： A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.
摘要翻译：包括基板，直接设置并形成在基板上的中间层，过渡区域和设置并形成为过渡区域的延伸的II-VI族块状晶体材料的结构。过渡区域用于将结构从下面的衬底改变为本体晶体的结构。在制造方法中，可以使用类似的技术来生长过渡区域和体晶层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式