专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5545030A Diamond film and solid non-diamond particle composite compositions 失效
标题翻译：金刚石薄膜和固体非金刚石颗粒复合组合物
公开(公告)号：US5545030A
公开(公告)日：1996-08-13
申请号：US327353
申请日：1994-10-20
申请人： John M. Pinneo
发明人： John M. Pinneo
IPC分类号： C01B31/06 , C23C16/04 , C23C16/27 , B29F5/00
CPC分类号： C01B31/065 , C04B30/02 , C04B35/52 , C04B35/64 , C04B38/0038 , C23C16/045 , C23C16/27 , C23C16/274 , C04B2235/427 , C04B2235/667 , Y10T428/249953 , Y10T428/249967 , Y10T428/249986 , Y10T428/249987 , Y10T428/24999 , Y10T428/25 , Y10T428/2933 , Y10T428/2938 , Y10T428/298 , Y10T428/30 , Y10T428/31938
摘要： Porous and non-porous compositions include diamond particles, non-diamond particles, or mixtures of particles consolidated with polycrystalline diamond. The composite compositions of the present invention may be formed by a process which includes the steps of preforming the particles into a preform having a desired shape, and consolidating the preform with polycrystalline diamond. The polycrystalline diamond is preferably formed using CVD techniques including application of sufficient microwave energy to maintain the preform at a temperature of between about 670.degree. and 850.degree. C. The preform may be rotated during a portion of the deposition process.
摘要翻译：多孔和无孔组合物包括金刚石颗粒，非金刚石颗粒或与多晶金刚石固结的颗粒的混合物。本发明的复合组合物可以通过一种方法形成，该方法包括以下步骤：将颗粒预成型为具有所需形状的预成型体，并将预型体与多晶金刚石固结。多晶金刚石优选使用CVD技术形成，包括施加足够的微波能量以将预制件保持在约670℃至850℃之间的温度。预成型件可以在沉积过程的一部分期间旋转。

2. 发明授权

US5449412A Apparatus and method for controlling plasma size and position in plasma-activated chemical vapor deposition processes 失效
标题翻译：用于控制等离子体激活的化学气相沉积工艺中的等离子体尺寸和位置的装置和方法
公开(公告)号：US5449412A
公开(公告)日：1995-09-12
申请号：US60953
申请日：1993-05-13
申请人： John M. Pinneo
发明人： John M. Pinneo
IPC分类号： C23C16/26 , C23C16/50 , C23C16/511 , C23C16/52 , H01J37/32 , H05H1/46 , C23C16/30
CPC分类号： H01J37/32256 , H01J37/32192 , H01J37/32266 , H01J37/3299
摘要： A block of dielectric material having a long axis and a short axis and having low losses at a selected microwave frequency and a dielectric constant selected to produce a desired degree of phase modulation is mounted on a rotatable shaft in an orientation perpendicular to the long and short axes and arranged inside a waveguide feeding a CVD reactor containing a plasma species. The block is spun by a rotational force applied to the shaft at an angular acceleration such that the two axes of the block successively intersect the axis of the waveguide within the decay period of the plasma species. The frequency of phase modulation can be varied by changing the angular acceleration of the shaft, and the amplitude of the phase modulation can be varied by changing the ratio of block length to thickness and/or by selecting a material with higher dielectric constant. The incident microwave power may be modulated as a function of angular position of the spin shaft. By moving the apparent plasma and modulating the applied microwave power, a customized temperature profile may be achieved over a desired substrate area.
摘要翻译：具有长轴和短轴并且在选定的微波频率下具有低损耗并且选择用于产生期望程度的相位调制的介电常数的介电材料块以垂直于长短的方向安装在可旋转轴上并且布置在馈送包含等离子体物质的CVD反应器的波导内部。通过以角加速度施加到轴的旋转力来旋转该块，使得块的两个轴在等离子体物种的衰减周期内连续地与波导的轴线相交。可以通过改变轴的角加速度来改变相位调制的频率，并且可以通过改变块长度与厚度的比率和/或通过选择具有较高介电常数的材料来改变相位调制的幅度。入射微波功率可以作为旋转轴的角位置的函数进行调制。通过移动表观等离子体并调制施加的微波功率，可以在期望的衬底区域上实现定制的温度分布。

3. 发明授权

US5304424A High thermal conductivity diamond/non-diamond composite materials 失效
标题翻译：高导热性金刚石/非金刚石复合材料
公开(公告)号：US5304424A
公开(公告)日：1994-04-19
申请号：US954354
申请日：1992-09-30
申请人： John A. Herb , John M. Pinneo , Clayton F. Gardinier
发明人： John A. Herb , John M. Pinneo , Clayton F. Gardinier
IPC分类号： C01B31/06 , C23C16/04 , C23C16/27 , B32B9/00
CPC分类号： C23C16/274 , C01B31/065 , C04B30/02 , C04B35/52 , C04B35/64 , C04B38/0038 , C23C16/045 , C23C16/27 , C04B2235/427 , C04B2235/667 , Y10T428/249955 , Y10T428/249956 , Y10T428/249957 , Y10T428/249967 , Y10T428/24997 , Y10T428/24999 , Y10T428/2938 , Y10T428/2991 , Y10T428/30
摘要： A CVD diamond material, substantially free of voids, has an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25. The diamond material may also comprise carbon atoms with a C.sup.13 content less than 0.05 atomic %.
摘要翻译：基本上没有空隙的CVD金刚石材料具有大于约15微米的平均微晶尺寸，金刚石拉曼峰的最大强度（以/秒计）除以1270cm -1以上的光致发光强度大于约3，a 拉曼sp3全宽半最小小于约6cm -1，金刚石至石墨拉曼比大于约25.金刚石材料还可包含C13含量小于0.05原子％的碳原子。

4. 发明授权

US5270114A High thermal conductivity diamond/non-diamond composite materials 失效
标题翻译：高导热性金刚石/非金刚石复合材料
公开(公告)号：US5270114A
公开(公告)日：1993-12-14
申请号：US954671
申请日：1992-09-30
申请人： John A. Herb , John M. Pinneo , Clayton F. Gardinier
发明人： John A. Herb , John M. Pinneo , Clayton F. Gardinier
IPC分类号： C01B31/06 , C23C16/27 , B32B9/00
CPC分类号： C23C16/274 , C01B31/065 , C23C16/27 , Y10T428/249955 , Y10T428/249956 , Y10T428/249967 , Y10T428/2991 , Y10T428/30
摘要： The present invention comprises an article formed from a plurality of diamond particles and non-diamond particles compatible with diamond deposition preformed into a desired shape. Each of the particles has first surface regions in contact with immediately adjacent other ones of the particles, and second surface regions spaced apart from the immediately adjacent other ones of said particles to define boundaries of inter-particle voids between the immediately adjacent ones of the particles. The voids are infiltrated with high thermal conductivity CVD diamond material continuously coating the second surface regions of the particles and comprising merged growth fronts from the second surface regions of individual immediately adjacent ones of the particles into the inter-particle voids. The high thermal conductivity CVD diamond material has an average crystallite size greater than about 15 microns, an intensity ratio of diamond- Raman-peak-to-photoluminescence background intensity greater than about 20, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25. The thermal conductivity of the CVD diamond materials is in excess of 17 Wcm.sup.-1 K.sup.-1.
摘要翻译：本发明包括由多个金刚石颗粒和与金刚石沉积相容的非金刚石颗粒形成的制品，其预成形为所需形状。每个颗粒具有与直接相邻的其它颗粒接触的第一表面区域，以及与紧邻的另一个颗粒间隔开的第二表面区域，以限定紧邻的颗粒之间的颗粒间空隙的边界。空隙被高导热性CVD金刚石材料渗透，连续地涂覆颗粒的第二表面区域并且包括从单个紧邻的颗粒的第二表面区域到颗粒间空隙中的合并生长前沿。高导热性CVD金刚石材料具有大于约15微米的平均微晶尺寸，金刚石 - 拉曼峰 - 光致发光背景强度的强度比大于约20，金刚石拉曼峰的最大强度以计数/秒计除以大于约3的1270cm-1处的光致发光强度，小于约6cm -1的拉曼sp3全宽半最大值和大于约25的金刚石 - 石墨拉曼比。CVD的热导率金刚石材料超过17 Wcm-1K-1。

5. 发明授权

US4882138A Method for preparation of diamond ceramics 失效
标题翻译：金刚石陶瓷的制备方法
公开(公告)号：US4882138A
公开(公告)日：1989-11-21
申请号：US204058
申请日：1988-06-07
申请人： John M. Pinneo
发明人： John M. Pinneo
IPC分类号： C01B31/06 , C23C16/27
CPC分类号： C23C16/274 , C01B31/065 , C23C16/27
摘要： Processes are provided for consolidating diamond particles into a mechanically stable diamond mass, called a diamond ceramic. A compacted aggregation of diamond particles is subjected to low pressure PECVD conditions in the presence of atomic hydrogen, with or without a carbon source gas, whereby a mechanically stable diamond ceramic is formed substantially devoid of interstitial spaces.
摘要翻译：提供了将金刚石颗粒固结成机械稳定的金刚石块（称为金刚石陶瓷）的工艺。金刚石颗粒的压实聚集体在存在原子氢的情况下经受低压PECVD条件，具有或不具有碳源气体，由此形成基本上没有间隙的机械稳定的金刚石陶瓷。

6. 发明授权

US5852341A Diamond film with sharp field emission turn-on 失效
标题翻译：具有尖锐场发射的金刚石薄膜开启
公开(公告)号：US5852341A
公开(公告)日：1998-12-22
申请号：US743289
申请日：1996-11-04
申请人： William Phillips , John M. Pinneo
发明人： William Phillips , John M. Pinneo
IPC分类号： C23C16/27 , H01J1/14 , H01J1/16
CPC分类号： C23C16/274 , C23C16/277 , C23C16/279
摘要： An ultrasmooth diamond film has a thickness greater than about ten microns and an average grain size less than about 0.5 micron. The ultrasmooth diamond film of the present invention is grown using ordinary microwave plasma CVD methods, with a metal vapor source included in the reactor to produce vapor during the growth of the film. The metal vapor source may be chosen from the first row transition elements, chromium, iron, cobalt, and nickel, or from the lanthanides praseodymium, europium, or erbium. Any metal capable of existing in the vapor phase in the presence of the hydrogen plasma, will cause formation of the ultrasmooth film of the present invention.
摘要翻译：超平滑金刚石膜的厚度大于约10微米，平均粒度小于约0.5微米。使用普通微波等离子体CVD方法生长本发明的超平滑金刚石膜，其中包含在反应器中的金属蒸汽源在膜生长期间产生蒸气。金属蒸气源可以选自第一排过渡元素，铬，铁，钴和镍，或来自镧系元素镨，铕或铒。在氢等离子体存在下，能够存在于气相中的任何金属都将导致本发明的超静电膜的形成。

7. 发明授权

US5614140A Methods for fabricating diamond film and solid fiber composite structure 失效
标题翻译：制造金刚石膜和固体纤维复合结构的方法
公开(公告)号：US5614140A
公开(公告)日：1997-03-25
申请号：US327468
申请日：1994-10-20
申请人： John M. Pinneo
发明人： John M. Pinneo
IPC分类号： C01B31/06 , C23C16/04 , C23C16/27 , B05D1/36 , C23C8/00 , C23C16/00
CPC分类号： C01B31/065 , C04B30/02 , C04B35/52 , C04B35/64 , C04B38/0038 , C23C16/045 , C23C16/27 , C23C16/274 , C04B2235/427 , C04B2235/667 , Y10T428/249953 , Y10T428/249967 , Y10T428/249986 , Y10T428/249987 , Y10T428/24999 , Y10T428/25 , Y10T428/2933 , Y10T428/2938 , Y10T428/298 , Y10T428/30 , Y10T428/31938
摘要： Porous and non-porous compositions include diamond particles, non-diamond particles, or mixtures of particles consolidated with polycrystalline diamond. The composite compositions of the present invention may be formed by a process which includes the steps of preforming the particles into a preform having a desired shape, and consolidating the preform with polycrystalline diamond. The polycrystalline diamond is preferably formed using CVD techniques including application of sufficient microwave energy to maintain the preform at a temperature of between about 670.degree. and 850.degree. C. The preform may be rotated during a portion of the deposition process.
摘要翻译：多孔和无孔组合物包括金刚石颗粒，非金刚石颗粒或与多晶金刚石固结的颗粒的混合物。本发明的复合组合物可以通过一种方法形成，该方法包括以下步骤：将颗粒预成型为具有所需形状的预成型体，并将预型体与多晶金刚石固结。多晶金刚石优选使用CVD技术形成，包括施加足够的微波能量以将预制件保持在约670℃至850℃之间的温度。预成型件可以在沉积过程的一部分期间旋转。

8. 发明授权

US5284709A Diamond materials with enhanced heat conductivity 失效
标题翻译：具有增强导热性的金刚石材料
公开(公告)号：US5284709A
公开(公告)日：1994-02-08
申请号：US789732
申请日：1991-11-08
申请人： John A. Herb , John M. Pinneo , Clayton F. Gardinier
发明人： John A. Herb , John M. Pinneo , Clayton F. Gardinier
IPC分类号： C01B31/06 , C23C16/04 , C23C16/27 , C30B29/04
CPC分类号： C23C16/274 , C01B31/065 , C04B30/02 , C04B35/52 , C04B35/64 , C04B38/0038 , C23C16/045 , C23C16/27 , C04B2235/427 , C04B2235/667 , Y10T428/249955 , Y10T428/249956 , Y10T428/249957 , Y10T428/249967 , Y10T428/24997 , Y10T428/24999 , Y10T428/2938 , Y10T428/2991 , Y10T428/30
摘要： A diamond film having an intensity ratio of diamond-Raman-peak-to-photoluminescence background intensity greater than about 20, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm greater than about 3, a Raman sp full width half maximum less than about 6 cm and a diamond-to-graphite Raman ratio greater than about 25. The diamond film has a thermal conductivity of at least 17 Wcm K.
摘要翻译：具有大于约20的金刚石 - 拉曼峰 - 光致发光背景强度的强度比的金刚石膜，以秒/秒除以金刚石拉曼峰的最大强度除以1270厘米以上的光致发光强度大于约3，拉曼sp全宽半最小值小于约6厘米，金刚石至石墨拉曼比大于约25.金刚石膜的热导率至少为17 Wcm。

9. 发明授权

US5271971A Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material 失效
标题翻译：用高导热性金刚石材料涂覆基材的微波等离子体CVD方法
公开(公告)号：US5271971A
公开(公告)日：1993-12-21
申请号：US954356
申请日：1992-09-30
申请人： John A. Herb , John M. Pinneo , Clayton F. Gardinier
发明人： John A. Herb , John M. Pinneo , Clayton F. Gardinier
IPC分类号： C01B31/06 , C23C16/27 , B05D3/06 , C23C16/26
CPC分类号： C23C16/274 , C01B31/065 , C23C16/27 , Y10T428/30
摘要： A two-stage microwave plasma CVD process is disclosed for making a CVD diamond material, substantially free of voids, which has an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25.
摘要翻译：公开了两级微波等离子体CVD方法，用于制造基本上没有空隙的CVD金刚石材料，其平均微晶尺寸大于约15微米，金刚石拉曼峰的最大强度（以计数/秒除以强度）在大于约3的1270cm -1处的光致发光，小于约6cm -1的拉曼sp3全宽半最大值和大于约25的金刚石 - 石墨拉曼比。

10. 发明授权

US5230740A Apparatus for controlling plasma size and position in plasma-activated chemical vapor deposition processes comprising rotating dielectric 失效
标题翻译：用于控制包含旋转介质的等离子体活化化学气相沉积方法中的等离子体尺寸和位置的装置
公开(公告)号：US5230740A
公开(公告)日：1993-07-27
申请号：US809288
申请日：1991-12-17
申请人： John M. Pinneo
发明人： John M. Pinneo
IPC分类号： C23C16/26 , C23C16/50 , C23C16/511 , C23C16/52 , H01J37/32 , H05H1/46
CPC分类号： H01J37/32256 , H01J37/32192 , H01J37/32266 , H01J37/3299
摘要： A block of dielectric material having a long axis and a short axis and having low losses at a selected microwave frequency and a dielectric constant selected to produce a desired degree of phase modulation is mounted on a rotatable shaft in an orientation perpendicular to the long and short axes and arranged inside a waveguide feeding a CVD reactor containing a plasma species The block is spun by a rotational force applied to the shaft at an angular acceleration such that the two axes of the block successively intersect the axis of the waveguide within the decay period of the plasma species. The frequency of phase modulation can be varied by changing the angular acceleration of the shaft, and the amplitude of the phase modulation can be varied by changing the ratio of block length to thickness and/or by selecting a material with higher dielectric constant. The incident microwave power may be modulated as a function of angular position of the spin shaft. By moving the apparent plasma and modulating the applied microwave power, a customized temperature profile may be achieved over a desired substrate area.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式