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    • 5. 发明授权
    • Integrated complementary transistor circuit at an intermediate stage of
manufacturing
    • 集成互补晶体管电路在制造的中间阶段
    • US4657602A
    • 1987-04-14
    • US698657
    • 1983-06-10
    • Donald L. Henderson, Sr.
    • Donald L. Henderson, Sr.
    • H01L21/762H01L21/8238H01L21/263
    • H01L21/76218H01L21/823892Y10S438/965
    • An integrated complementary transistor circuit at an intermediate stage of manufacturing comprises a semiconductor substrate having dopant atoms of a first conductivity type and having a substantially flat major surface; a patterned layer of material that is essentially impervious to oxygen diffusion covering first and second spaced apart areas on the surface and having openings which expose the surface between the areas; a channel stop region having dopant atoms of the first conductivity type with a larger doping concentration than the substrate throughout that portion of the surface which is exposed by the openings; and a well region having dopant atoms of a second conductivity type opposite to the first type in the substrate under all of the second area and extending under an adjacent portion of the channel stop region but terminating before reaching the first area; the well region also having a depth and doping concentration at the center of the second area which is substantially smaller than the depth and doping concentration below the channel stop region and adjacent portion of the second area.
    • 在制造的中间阶段的集成互补晶体管电路包括具有第一导电类型的掺杂剂原子并且具有基本平坦的主表面的半导体衬底; 基本上不渗透氧扩散的图案化材料层,覆盖表面上的第一和第二间隔开的区域,并且具有露出该区域之间的表面的开口; 具有第一导电类型的掺杂剂原子的沟道停止区,在由开口暴露的表面的该部分处具有比衬底更大的掺杂浓度; 以及在所有第二区域内在衬底中具有与第一类型相反的第二导电类型的掺杂剂原子的阱区,并且在通道停止区域的相邻部分下方延伸,但在到达第一区域之前终止; 所述阱区域在第二区域的中心处也具有深度和掺杂浓度,该深度和掺杂浓度基本上小于沟道停止区域和第二区域的相邻部分之下的深度和掺杂浓度。