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81. 发明授权

US07083745B2 Production method for laminate type dielectric device and electrode paste material 失效
标题翻译：层压型电介质器件和电极糊料的生产方法
公开(公告)号：US07083745B2
公开(公告)日：2006-08-01
申请号：US10029006
申请日：2001-12-28
申请人： Hitoshi Shindo , Atsuhiro Sumiya , Eturo Yasuda , Takashi Yamamoto , Toshiatsu Nagaya
发明人： Hitoshi Shindo , Atsuhiro Sumiya , Eturo Yasuda , Takashi Yamamoto , Toshiatsu Nagaya
IPC分类号： H01B1/14 , H01B1/08 , H01G4/10 , C04B35/491 , C04B35/01
CPC分类号： H01G4/0085 , H01L41/0471 , H01L41/0477 , H01L41/273 , H01L41/297 , H05K1/092
摘要： This invention provides a method of producing a laminate type dielectric device free from peeling of an electrode layer and a ceramic layer and from voids in both electrode layer and ceramic layer, and an electrode paste material. The invention relates also to an electrode paste material for constituting electrode layers of a laminate type dielectric device produced by at least the steps of alternately laminating ceramic layers 11 containing a lead element as a constituent component and electrode layers 2, and degreasing and baking the laminate, wherein the electrode paste material contains CuO as a principal component of a starting material of an electrically conductive material, a solvent, a binder, and a cooperative material consisting of at least one kind of the main components constituting the ceramic layer 11.
摘要翻译：本发明提供一种不会剥离电极层和陶瓷层以及从电极层和陶瓷层中的空隙剥离的叠层型电介质器件的制造方法和电极糊料。本发明还涉及用于构成层压型电介质器件的电极层的电极糊材料，该电极浆料材料至少通过交替层叠包含铅元素作为构成成分的陶瓷层11和电极层2，以及对层压体进行脱脂和烘烤其中，所述电极浆料含有CuO作为导电材料的原料的主要成分，溶剂，粘合剂，以及由构成陶瓷层11的至少一种主要成分构成的配合材料。

82. 发明授权

US06960547B2 Dielectric ceramic composition and capacitor using the same 有权
标题翻译：介电陶瓷组合物和使用其的电容器
公开(公告)号：US06960547B2
公开(公告)日：2005-11-01
申请号：US10255614
申请日：2002-09-27
申请人： Hiroaki Matoba , Atsushi Sano , Hiroshi Tamura
发明人： Hiroaki Matoba , Atsushi Sano , Hiroshi Tamura
IPC分类号： C04B35/46 , C04B35/468 , H01B3/12 , H01G4/12 , C04B35/465 , H01G4/10
CPC分类号： H01G4/1227 , C04B35/4682 , C04B35/49 , C04B2235/3206 , C04B2235/3208 , C04B2235/3215 , C04B2235/3217 , C04B2235/3225 , C04B2235/3244 , C04B2235/3251 , C04B2235/3262 , C04B2235/3418 , C04B2235/656 , C04B2235/79 , H01B3/12
摘要： A dielectric ceramic composition having a high maximum relative dielectric constant, a superior temperature characteristic of capacitance and a high AC breakdown voltage, and a capacitor using the same are provided. The dielectric ceramic composition includes a polycrystalline solid solution which contains barium titanate as a primary component and which is represented by the formula (Ba1−xCax)a(Ti1−yZry)bO3 in which 0
摘要翻译：提供具有高的最大相对介电常数，电容的高温特性和高的交流击穿电压的电介质陶瓷组合物，以及使用其的电容器。电介质陶瓷组合物包括含有钛酸钡作为主要成分并由下式（Ba 1-x C x x）a a表示的多晶固溶体（Ti 1-y Z z O）其中0 的量在大于零至大约2.5重量份的范围内。

83. 发明授权

US06946415B2 Composition for insulating ceramics and insulating ceramics using the same 有权
标题翻译：绝缘陶瓷和使用其的绝缘陶瓷的组成
公开(公告)号：US06946415B2
公开(公告)日：2005-09-20
申请号：US10296929
申请日：2002-03-26
申请人： Osamu Chikagawa , Sadaaki Sakamoto , Yoichi Moriya
发明人： Osamu Chikagawa , Sadaaki Sakamoto , Yoichi Moriya
IPC分类号： C03C8/14 , C03C14/00 , C04B35/03 , C04B35/20 , C04B35/443 , H01G4/10 , H01L23/15 , H01L23/498 , H05K1/03
CPC分类号： H01G4/10 , C03C8/14 , C03C14/00 , C03C2214/04 , C04B35/03 , C04B35/20 , C04B35/443 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3222 , C04B2235/3232 , C04B2235/3281 , C04B2235/3284 , C04B2235/3409 , C04B2235/3418 , C04B2235/3445 , C04B2235/36 , C04B2235/6025 , C04B2235/656 , C04B2235/96 , H01L23/15 , H01L23/49822 , H01L23/49894 , H01L2224/16225 , H01L2924/00014 , H01L2924/09701 , H01L2924/10253 , H01L2924/15192 , H01L2924/1531 , H01L2924/16152 , H01L2924/16251 , H01L2924/19105 , H01L2924/3025 , H05K1/0306 , H01L2924/00 , H01L2224/0401
摘要： An insulating ceramic composition includes a mixture of a ceramic powder containing MgAl2O4 and a glass powder containing 30-60% by mole of silicon oxide on the basis of SiO2 and 20-55% by mole of magnesium oxide on the basis of MgO, and the ceramic powder further includes Mg2SiO4 and TiO2. The insulating ceramic composition can be fired at 1000° C. and co-sintered with Ag and Cu. An insulating ceramic obtained by sintering the insulating ceramic composition has a high Q-factor and is therefore suitable for ceramic multilayer substrates used at high frequencies.
摘要翻译：绝缘陶瓷组合物包括含有MgAl 2 O 4的陶瓷粉末和基于SiO 2的含有30-60摩尔％氧化硅的玻璃粉末的混合物， SiO 2和20〜55摩尔％的氧化镁，陶瓷粉末还含有SiO 2 SiO 4和TiO 2， SUB> 2 。绝缘陶瓷组合物可以在1000℃下烧制并与Ag和Cu共烧结。通过烧结绝缘陶瓷组合物获得的绝缘陶瓷具有高Q因子，因此适用于在高频下使用的陶瓷多层基板。

84. 发明申请

US20050139965A1 Capacitor with hafnium, lanthanum and oxygen mixed dielectric and method for fabricating the same 失效
标题翻译：具有铪，镧和氧混合电介质的电容器及其制造方法
公开(公告)号：US20050139965A1
公开(公告)日：2005-06-30
申请号：US10883322
申请日：2004-06-30
申请人： Kee-Jeung Lee
发明人： Kee-Jeung Lee
IPC分类号： H01L27/04 , C23C16/40 , C23C16/455 , C23C16/52 , H01G4/08 , H01G4/10 , H01L21/314 , H01L21/316 , H01L23/58 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02192 , C23C16/40 , C23C16/45529 , C23C16/45531 , C23C16/52 , H01G4/085 , H01G4/10 , H01L21/02181 , H01L21/02271 , H01L21/0228 , H01L21/3142 , H01L21/31637 , H01L21/31645
摘要： Disclosed is a capacitor with a dielectric layer having a low equivalent oxide thickness compared to a HfO2 layer and capable of decreasing a level of a leakage current incidence and a method for fabricating the same. Particularly, the capacitor includes: a bottom electrode; a Hf1-xLaxO layer on the bottom electrode; and a top electrode on the Hf1-xLaxO layer, wherein x is an integer. The method includes the steps of: forming at least one bottom electrode being made of polysilicon doped with impurities; nitriding a surface of the bottom electrode; depositing the amorphous Hf1-xLaxO layer on the nitrided surface of the bottom electrode; performing a thermal process for crystallizing the amorphous Hf1-xLaxO layer and removing impurities existed within the Hf1-xLaxO layer; nitriding a surface of the crystallized Hf1-xLaxO layer; and forming the top electrode being made of polysilicon doped with impurities on the nitrided surface of the crystallized Hf1-xLaxO layer.
摘要翻译：公开了一种电容器，其具有与HfO 2 O 2层相比具有低等效氧化物厚度的电介质层，并且能够降低漏电流入射的电平及其制造方法。特别地，电容器包括：底部电极; 在底部电极上的Hf 1-xLa x O x O层; 以及Hf 1-xLa x O O层上的顶电极，其中x为整数。该方法包括以下步骤：形成由杂质掺杂的多晶硅制成的至少一个底电极; 渗透底部电极的表面; 在底部电极的氮化表面上沉积无定形Hf 1-xLa x O x O层; 执行用于使非晶Hf 1-x La x O O层结晶的热处理，并除去存在于Hf 1-x La 2 O 3中的杂质 > x O层; 对结晶的Hf 1-xLa x O O层的表面进行氮化; 以及在晶化的Hf 1-x La x O层的氮化表面上形成顶部电极由掺杂有杂质的多晶硅制成。

85. 发明授权

US06876536B2 Thin film capacitor and method for fabricating the same 有权
标题翻译：薄膜电容器及其制造方法
公开(公告)号：US06876536B2
公开(公告)日：2005-04-05
申请号：US10331140
申请日：2002-12-27
申请人： Yukio Sakashita , Kyung-Ku Choi
发明人： Yukio Sakashita , Kyung-Ku Choi
IPC分类号： H01G4/10 , H01G4/12 , H01G4/228 , H01G4/32 , H01G4/33 , H01L21/02 , H01L27/01 , H01L29/76
CPC分类号： H01G4/33 , H01G4/10 , H01G4/228 , H01L27/016 , H01L28/57 , H01L28/65
摘要： A thin film capacitor including a first electrode structural body, a second electrode structural body and a dielectric thin film provided between the first and second electrode structural bodies and containing a bismuth layer structured compound. The surface of the first electrode structural body in contact with the dielectric thin film is oriented in the [001] direction. As a result, the dielectric thin film is naturally oriented so that its c axis is substantially perpendicular to the electrode structural bodies. When a voltage is applied between the first and second electrode structural bodies, since the direction of the electric field substantially coincides with the c axis of the bismuth layer structured compound, the bismuth layer structured compound can be prevented from exhibiting the ferroelectric property and made to sufficiently exhibit the paraelectric property. Further, a bismuth oxide layer (Bi2O2)2+ functions as an insulating layer, thereby improves the insulation property of the dielectric thin film while makes the thin film much thinner.
摘要翻译：一种薄膜电容器，包括第一电极结构体，第二电极结构体和设置在第一和第二电极结构体之间并且包含铋层结构化合物的电介质薄膜。与电介质薄膜接触的第一电极结构体的表面在[001]方向上取向。结果，电介质薄膜被天然地取向为使其c轴基本垂直于电极结构体。当在第一和第二电极结构体之间施加电压时，由于电场方向基本上与铋层结构化合物的c轴重合，所以可以防止铋层结构化合物表现出铁电性质，充分展现了顺电特性。此外，氧化铋层（Bi 2 O 2）2+充当绝缘层，从而提高电介质薄膜的绝缘性，同时使薄膜更薄。

86. 发明授权

US5923524A Dielectric material compressing Ta.sub.2 O.sub.5 doped with TiO.sub.2 and devices employing same 失效
标题翻译：包含掺杂有TiO 2的Ta 2 O 5的介电材料和使用其的器件
公开(公告)号：US5923524A
公开(公告)日：1999-07-13
申请号：US767153
申请日：1996-12-16
申请人： Robert Joseph Cava
发明人： Robert Joseph Cava
IPC分类号： C04B35/46 , H01B3/12 , H01G4/10 , H01G4/12 , H01G4/06
CPC分类号： H01G4/10
摘要： Applicant has discovered that the dielectric constant of Ta.sub.2 O.sub.5 can be significantly enhanced by the addition of small quantities of TiO.sub.2. Specifically, if Ta.sub.2 O.sub.5 is doped with more than about 3 mole percent of TiO.sub.2 the doped material will have a dielectric constant higher than the undoped material. For example, at a ratio of 0.92 Ta.sub.2 O.sub.5 :0.08TiO.sub.2, the dielectric constant is enhanced by a factor of more than three. Because both Ta and Ti are compatible with current microelectronics processing, the new dielectric can be used to make capacitors of reduced size with but minor modifications of conventional processes.
摘要翻译：申请人已经发现，通过添加少量的TiO 2可显着提高Ta2O5的介电常数。具体地说，如果掺杂超过约3％（摩尔）TiO 2的Ta 2 O 5，则掺杂材料的介电常数将高于未掺杂的材料。例如，以0.92Ta 2 O 5 :0.08TiO 2的比例，介电常数提高3倍以上。由于Ta和Ti都与当前的微电子加工兼容，所以新的电介质可以用于制造尺寸减小的电容器，而对常规工艺进行微小修改。

87. 发明授权

US5566045A High-dielectric-constant material electrodes comprising thin platinum layers 失效
标题翻译：包含铂层的高介电常数材料电极
公开(公告)号：US5566045A
公开(公告)日：1996-10-15
申请号：US283881
申请日：1994-08-01
申请人： Scott R. Summerfelt , Howard R. Beratan , Peter S. Kirlin , Bruce E. Gnade
发明人： Scott R. Summerfelt , Howard R. Beratan , Peter S. Kirlin , Bruce E. Gnade
IPC分类号： H01L21/02 , H01G4/10
CPC分类号： H01L28/55 , H01L28/60 , Y10T29/435
摘要： A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive film can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material. These structures may also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.
摘要翻译：本发明的优选实施方案包括使高介电常数材料（例如钛酸钡锶38）与电极接触的薄的非反应性膜（例如铂36）。薄的非反应性膜在高介电常数材料层和电极基底（例如钯34）之间提供稳定的导电界面。与标准薄膜层相反，薄的非反应性膜通常小于50nm厚，优选小于35nm厚，更优选在5nm和25nm之间，最优选在10nm和20nm之间。薄的非反应性膜可以受益于所使用的材料的优点，同时避免或最小化许多它们的缺点。薄的非反应性膜通常比标准薄膜层便宜得多，因为可以使用更少的材料，而不会显着影响与HDC材料接触的电极的表面积。这些结构也可以用于多层电容器和其他薄膜铁电体器件，例如热电材料，非易失性存储器，薄膜压电和薄膜电光氧化物。

88. 发明授权

US5510651A Semiconductor device having a reducing/oxidizing conductive material 失效
标题翻译：具有还原/氧化导电材料的半导体器件
公开(公告)号：US5510651A
公开(公告)日：1996-04-23
申请号：US342293
申请日：1994-11-18
申请人： Papu D. Maniar , Reza Moazzami , C. Joseph Mogab
发明人： Papu D. Maniar , Reza Moazzami , C. Joseph Mogab
IPC分类号： H01G4/33 , H01L21/02 , H01L21/822 , H01L21/8246 , H01L23/522 , H01L23/532 , H01L27/04 , H01L27/105 , H01L27/115 , H01L29/43 , H01L29/45 , H01G4/10
CPC分类号： H01L27/11502 , H01L21/76849 , H01L23/5226 , H01L23/53209 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L28/40 , H01L28/60 , H01L29/43 , H01L29/456 , H01L28/55 , H01L2924/0002
摘要： The present invention includes a semiconductor device having a layer including an elemental metal and its conductive metal oxide, wherein the layer is capable being oxidized or reduced preferentially to an adjacent region of the device. The present invention also includes processes for forming the devices. Substrate regions, silicon-containing layers, dielectric layers, electrodes, barrier layers, contact and via plugs, interconnects, and ferroelectric capacitors may be protected by and/or formed with the layer. Examples of elemental metals and their conductive metal oxides that may be used with the present invention are: ruthenium and ruthenium dioxide, rhenium and rhenium dioxide, iridium and iridium dioxide, osmium and osmium tetraoxide, or the like.
摘要翻译：本发明包括具有包含元素金属和其导电金属氧化物的层的半导体器件，其中该层能够被优先地氧化或还原成该器件的相邻区域。本发明还包括用于形成装置的方法。衬底区域，含硅层，电介质层，电极，阻挡层，接触和通孔插塞，互连和铁电电容器可以由层保护和/或形成。可用于本发明的元素金属及其导电金属氧化物的实例是：钌和二氧化钌，铼和二氧化铼，铱和二氧化铱，锇和四氧化锇等。

89. 发明授权

US5377072A Single metal-plate bypass capacitor 失效
标题翻译：单金属板旁路电容
公开(公告)号：US5377072A
公开(公告)日：1994-12-27
申请号：US179275
申请日：1994-01-10
申请人： Aubrey K. Sparkman , Kevin A. Calhoun , Jonathan C. Dahm , Joseph M. Haas, Jr. , Rolando J. Osorio
发明人： Aubrey K. Sparkman , Kevin A. Calhoun , Jonathan C. Dahm , Joseph M. Haas, Jr. , Rolando J. Osorio
IPC分类号： H01L23/64 , H01G1/03 , H01G4/10 , H01G4/38
CPC分类号： H01L23/642 , H01L2224/48091 , H01L2224/48265 , H01L2224/48465 , H01L2224/48479 , H01L24/48 , H01L2924/00014 , H01L2924/01014 , H01L2924/10253 , H01L2924/14 , H01L2924/19041 , H01L2924/19104 , H01L2924/30107
摘要： A single metal-plate bypass capacitor (10) includes a metal top plate (26) separated from a silicon substrate (12) by a thermally-grown, silicon dioxide dielectric (16) layer. An additional silicon plate (36) can be included intermediate to the metal top plate (26) and the silicon substrate (12) for multiple power supply devices. The silicon substrate (12) is electrically accessed through a metal contact pad (28) overlying a doped region (34) of the silicon substrate (12). The metal contact pad (28) is electrically isolated from the top plate (26) by an isolation structure (30). The bypass capacitor (10) is designed to be attached directly to the top surface of a semiconductor device (18), which enables the bypass capacitor (10) to be interconnected to the semiconductor device (18) by a plurality of bonding wires (25) having a minimal length. Because the capacitor dielectric (16) is formed as a very thin layer by the thermal oxidation of silicon, the self-inductance of bypass capacitor (10) is minimized.
摘要翻译：单个金属板旁路电容器（10）包括通过热生长的二氧化硅电介质（16）层与硅衬底（12）分离的金属顶板（26）。可以在金属顶板（26）和多个电源装置的硅衬底（12）之间包括另外的硅板（36）。硅衬底（12）通过覆盖硅衬底（12）的掺杂区域（34）的金属接触焊盘（28）电接触。金属接触焊盘（28）通过隔离结构（30）与顶板（26）电隔离。旁路电容器（10）被设计为直接附接到半导体器件（18）的顶表面，这使得旁路电容器（10）能够通过多个接合线（25）互连到半导体器件（18））具有最小的长度。由于电容器电介质（16）通过硅的热氧化形成为非常薄的层，所以旁路电容器（10）的自感最小化。

90. 发明授权

US5343353A Semiconductor device and process of producing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US5343353A
公开(公告)日：1994-08-30
申请号：US929918
申请日：1992-08-17
申请人： Hiroshi Miki , Yuzuru Ohji , Shinichi Tachi , Keiichi Kanehori
发明人： Hiroshi Miki , Yuzuru Ohji , Shinichi Tachi , Keiichi Kanehori
IPC分类号： H01L27/10 , C23C16/40 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01G4/10 , B05D5/12 , H01G7/00
CPC分类号： H01L28/56 , C23C16/409 , H01L21/31691 , Y10T29/435
摘要： A microminiature, large capacitor for a semiconductor memory is formed from a raw material compound of plural different kinds of metal atoms for deposition, irrespective of the material, temperature and surface condition of a substrate, thereby forming a thin dielectric film having uniform characteristics not affected by the interface even though the film is made as thin as approximately 0.1 .mu.m. The microminiature large capacitance capacitor has a capacitance unaffected by an oxide existing at the interface between a ferroelectric and electrodes without using precious metals such as platinum having the least degree of freedom in deposition of thin films and microminiature processing. The ferroelectric thin film is deposited using an organic metal comprising a plurality of kinds of metal elements in conformity with the composition of a desired dielectric. As electrodes for use in forming a capacitor, a substance exhibiting conductivity after oxidation is preferably employed.
摘要翻译：用于半导体存储器的微型大电容器由用于沉积的多种不同种类的金属原子的原料化合物形成，与基板的材料，温度和表面状况无关，从而形成具有不受影响的均匀特性的薄电介质膜通过界面即使薄膜制成薄约0.1μm。微型大容量电容器具有不受在铁电体和电极之间的界面处存在的氧化物的影响，而不使用贵金属如铂，其沉积薄膜和微型加工具有最小的自由度。使用包含多种金属元素的有机金属，使其与所需电介质的组成一致地沉积铁电薄膜。作为用于形成电容器的电极，优选使用氧化后显示导电性的物质。

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