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81. 发明授权

US5099388B1 Alumina multilayer wiring substrate provided with high dielectric material layer 失效
标题翻译：具有高电介质层的氧化铝多层布线基板
公开(公告)号：US5099388B1
公开(公告)日：1997-04-08
申请号：US53833490
申请日：1990-06-15
申请人： NGK SPARK PLUG CO , NGK SPARK PLUGS USA INC , INTEL CORP
发明人： OGAWA MASAHIRO , YAMASAKI KOZO , HIRANO MITSURU , SCHMITT MICHAEL A , BHATTACHARYYA BIDYUT K
IPC分类号： H05K9/00 , H01G4/12 , H01L23/64 , H05K1/03 , H05K1/09 , H05K1/16 , H05K3/46 , H01G4/06 , H01G4/10 , H01G4/20 , H01G4/228
CPC分类号： H01L23/642 , H01G4/12 , H01L2924/0002 , H05K1/0306 , H05K1/092 , H05K1/162 , H05K3/4611 , H05K3/4629 , H05K3/4688 , H05K2201/09309 , H01L2924/00

82. 发明授权

US5400210A Substrate having a built-in capacitor and process for producing the same 失效
标题翻译：具有内置电容器的基板及其制造方法
公开(公告)号：US5400210A
公开(公告)日：1995-03-21
申请号：US80107
申请日：1993-06-23
申请人： Noriyasu Sugimoto , Yukihiro Kimura , Masaharu Seto
发明人： Noriyasu Sugimoto , Yukihiro Kimura , Masaharu Seto
IPC分类号： H01B3/12 , H01G4/08 , H01G4/12 , H01L23/12 , H01L23/15 , H05K1/16 , H05K3/46 , H01G4/10
CPC分类号： H01G4/08
摘要： In a substrate having built-in capacitor which is incorporated in and united with an insulator, the capacitor has a dielectric layer made of a silicon nitride-based ceramic containing silicon carbide in an amount of from 13 to 30% by weight.
摘要翻译：在具有内置电容器的衬底中，该绝缘体并入并结合在一起，该电容器具有由含有13至30重量％的碳化硅的氮化硅基陶瓷制成的电介质层。

83. 发明授权

US5355277A Thin film capacitor 失效
标题翻译：薄膜电容器
公开(公告)号：US5355277A
公开(公告)日：1994-10-11
申请号：US992197
申请日：1992-12-17
申请人： Kazuhiro Hoshiba
发明人： Kazuhiro Hoshiba
IPC分类号： H01G4/33 , H01G4/38 , H01G7/06 , H01G4/10
CPC分类号： H01G4/385
摘要： A thin film capacitor includes a first capacitor composed of a ferroelectric film and a supplementary second capacitor composed of the ferroelectric film surrounding the first capacitor. In a capacitor of the present invention, the second capacitor is formed around a capacitor and the polarized condition thereof is possible to be controlled. Due to this original switching time of the first capacitor can be flexibly adjusted, and there is a significant advantage that switching characteristic of a capacitor can be greatly improved with minimum cost.
摘要翻译：薄膜电容器包括由铁电体膜构成的第一电容器和由围绕第一电容器的铁电体膜构成的辅助第二电容器。在本发明的电容器中，第二电容器围绕电容器形成，并且可以控制其极化状态。由于可以灵活地调整第一电容器的初始开关时间，并且具有显着的优点，可以以最小的成本大大提高电容器的开关特性。

84. 发明授权

US5347696A Method for manufacturing a multi-layer capacitor 失效
标题翻译：多层电容器的制造方法
公开(公告)号：US5347696A
公开(公告)日：1994-09-20
申请号：US164719
申请日：1993-12-10
申请人： Josef Willer , Hermann Wendt , Hans Reisinger
发明人： Josef Willer , Hermann Wendt , Hans Reisinger
IPC分类号： C23F4/00 , H01G4/30 , H01L21/822 , H01L27/04 , H01G4/10
CPC分类号： H01G4/306 , Y10T29/435
摘要： For manufacturing a multi-layer capacitor, a layer structure (2, 3, 4) is applied onto a substrate (1), said layer structure comprising conductive layers (2, 4) and dielectric layers (3) in alternation and successive conductive layers (2, 4) therein being respectively formed of one of two different materials which are selectively etchable relative to one another. Two openings (6, 8) are produced in the layer structure (2, 3, 4), whereby under-etchings (21, 41 ) are formed in the first opening (6) by selective etching of the one material and are formed in the second opening (8) by selective etching of the other material, so that only the conductive layers (2, 4) of the non-etched material respectively adjoin contacts (91, 92) introduced into the openings (6, 8).
摘要翻译：为了制造多层电容器，将层结构（2,3,4）施加到衬底（1）上，所述层结构交替包括导电层（2,4）和电介质层（3），并且连续导电层（2,4）分别由可相对于彼此选择性地蚀刻的两种不同材料之一形成。在层结构（2,3,4）中产生两个开口（6,8），由此通过选择性蚀刻该一种材料形成在第一开口（6）中的下蚀刻（21,41），并形成在所述第二开口（8）通过选择性蚀刻所述另一材料，使得仅所述非蚀刻材料的所述导电层（2,4）分别与引入所述开口（6,8）的触点（91,92）相邻。

85. 发明授权

US5345361A Shorted trimmable composite multilayer capacitor and method 失效
标题翻译：短路可调复合复合层叠电容器及方法
公开(公告)号：US5345361A
公开(公告)日：1994-09-06
申请号：US75732
申请日：1993-06-11
申请人： Delmont L. Billotte , Joel B. deNeuf , Bruce E. Helms
发明人： Delmont L. Billotte , Joel B. deNeuf , Bruce E. Helms
IPC分类号： H01G4/10 , H01G4/255
CPC分类号： H01G4/255 , Y10T29/417
摘要： A shorted trimmable composite multilayer capacitor (10) is initially shorted, but can be easily and efficiently unshorted and then functional trimmed while in a circuit. The capacitor (10) has a capacitor body (12) defined by a plurality of interleaved first and second electrodes (14, 16) spaced apart by ceramic. A trimmable outermost electrode (14') is situated on the capacitor body (12) and is capable of depletion by trimming for particularly selecting a capacitance associated with the capacitor (10). First and second terminations (24, 26) are disposed at first and second ends of the capacitor body (12) for connecting the capacitor (10) to a circuit. The first termination (24) is connected to the first electrodes (14), while the second termination is connected to the second electrode (16). Importantly, an interconnect bar (15) is disposed on the capacitor body (12) for connecting the outermost electrode (14') to the second termination (26) to thereby short the first and second terminations (24, 26). After the capacitor (10) has been placed in a circuit, the interconnect bar (15) can easily be eliminated to thereby unshort the capacitor (10), and the capacitor (10) can then be functionally trimmed via trimming the trimmable outermost electrode (14').
摘要翻译：短路可调复合复合层叠电容器（10）最初短路，但可以容易且有效地排除，然后在电路中进行功能修整。电容器（10）具有由陶瓷间隔开的多个交错的第一和第二电极（14,16）限定的电容器主体（12）。可调节的最外电极（14'）位于电容器本体（12）上，并且能够通过修整而耗尽，以特别选择与电容器（10）相关联的电容。第一和第二端子（24,26）设置在用于将电容器（10）连接到电路的电容器主体（12）的第一和第二端。第一终端（24）连接到第一电极（14），而第二终端连接到第二电极（16）。重要的是，互连条（15）设置在电容器主体（12）上，用于将最外面的电极（14'）连接到第二终端（26），从而使第一和第二终端（24,26）短路。在电容器（10）已经放置在电路中之后，可以容易地消除互连条（15），从而取消对电容器（10）的驱动，然后可以通过修整可调整的最外电极（ 14'）。

86. 发明授权

US5088003A Laminated silicon oxide film capacitors and method for their production 失效
标题翻译：层压氧化硅膜电容器及其生产方法
公开(公告)号：US5088003A
公开(公告)日：1992-02-11
申请号：US568994
申请日：1990-08-17
申请人： Naomichi Sakai , Masanaga Kikusawa , Yoshitaka Kubota , Hiroshi Yamamura , Hiroya Nagata
发明人： Naomichi Sakai , Masanaga Kikusawa , Yoshitaka Kubota , Hiroshi Yamamura , Hiroya Nagata
IPC分类号： H01G4/10 , H01G4/30 , H01L27/08
CPC分类号： H01L27/0805 , H01G4/10 , H01G4/30 , Y10T29/435
摘要： A laminated silicon oxide film capacitor including a conductive or semiconductive silicon substrate and, formed on the substrate surface, at least one laminated film comprising a silicon oxide layer and an electrode layer laminated one on the other, and electrodes.

87. 发明授权

US5088002A Ceramic electronic component and method of fabricating the same 失效
标题翻译：陶瓷电子元件及其制造方法
公开(公告)号：US5088002A
公开(公告)日：1992-02-11
申请号：US675148
申请日：1991-03-26
申请人： Toshio Ogawa
发明人： Toshio Ogawa
IPC分类号： G11C17/04 , H01G4/008 , H01G4/06 , H01G4/10 , H01G4/12 , H01G4/33 , H01G7/00 , H01L27/02
CPC分类号： H01G4/008 , Y10T29/435
摘要： A ceramic electronic component having a structure in which thin film electrodes made of a Ni-Al system alloy or a Ni-Cr-Al system alloy are formed so as to make contact with a functional ceramic thin film.
摘要翻译：具有如下结构的陶瓷电子部件，其中，形成由Ni-Al系合金或Ni-Cr-Al系合金构成的薄膜电极，以与功能陶瓷薄膜接触。

88. 发明授权

US5040093A Capacitor and method of manufacturing same 失效
标题翻译：电容器及其制造方法
公开(公告)号：US5040093A
公开(公告)日：1991-08-13
申请号：US487565
申请日：1990-03-02
申请人： Georg Greuel
发明人： Georg Greuel
IPC分类号： H01G4/12 , H01G4/005 , H01G4/008 , H01G4/012 , H01G4/10 , H01G4/30 , H01G7/00
CPC分类号： H01G4/012 , Y10T29/435
摘要： A capacitor having at least one dielectric layer present between each time a flat electrode and an opposite electrode, in which the electrode(s) and the opposite electrode(s) are staggered with respect to each other so that in the plane of each time one of two opposing end faces of the capacitor they terminate in the same plane and are contacted there by means of external connection contacts, in which at least one electrode in its end area adjacent the external connection contact associated with it comprises a window and that the non-contacted end(s) of the opposite electrode(s) extend(s) in the area of the window(s).
摘要翻译：一种具有至少一个电介质层的电容器，每个电介质层在平坦电极和相对电极之间存在，其中电极和相对电极相对于彼此交错，使得在每个时间的平面中电容器的两个相对的端面终止于相同的平面中，并通过外部连接触点与其接触，其中与其相关联的外部连接触点邻近的端部区域中的至少一个电极包括窗口， - 相对电极的接触端在窗口的区域中延伸。

89. 发明授权

US4956744A Multilayer capacitor 失效
标题翻译：多层电容器
公开(公告)号：US4956744A
公开(公告)日：1990-09-11
申请号：US319005
申请日：1989-03-03
申请人： Cornelis W. Berghout , Hendrikus J. J. M. Van Haren
发明人： Cornelis W. Berghout , Hendrikus J. J. M. Van Haren
IPC分类号： H01G4/008 , H01G4/10 , H01G4/12 , H01G4/232 , H01G7/00
CPC分类号： H01G4/008 , H01G4/2325 , Y10T29/435
摘要： In a multilayer capacitor, which is made of alternate layers of a dielectric oxidic ceramic material and an electrode material, and which is provided with metallic end contacts which electrically conductively contact a prescribed part of the layers of electrode material via an intermediate layer of a conductive metal oxide, the metallic end contacts containing silver, the diffusion of silver from the end contacts to the layers of electrode material is suppressed effectively in that the electrode material consists of palladium with 1 to 10% by weight of lead. On account of this, the end contacts can be readily manufactured from a paste, and delamination, cracking and the formation of cavities in the vicinity of the end contacts are suppressed.

90. 发明授权

US4930044A Thin-film capacitor and method of manufacturing a hybrid microwave integrated circuit 失效
标题翻译：薄膜电容器和混合微波集成电路的制造方法
公开(公告)号：US4930044A
公开(公告)日：1990-05-29
申请号：US398731
申请日：1989-08-25
申请人： Kazuo Eda , Tetsuji Miwa , Yutaka Taguchi
发明人： Kazuo Eda , Tetsuji Miwa , Yutaka Taguchi
IPC分类号： H01G4/10 , H01L27/01
CPC分类号： H01L27/016 , H01G4/10 , H01L2224/48091 , H01L2224/48227 , H01L2924/12044 , H01L2924/1423 , H01L2924/30107 , H01L2924/3011 , Y10T29/435
摘要： A thin-film capacitor which has excellent withstand voltage characteristic, dielectric loss characteristic and production yield can be obtained by forming its dielectric film with a 3-layered structure comprising a first silicon oxide film formed on a polycrystalline sintered body substrate by a chemical vapor-phase deposition method, a second silicon oxide film formed by coating on the first silicon oxide film a solution state silicon oxide precursor followed by denaturing by heat treatment, and a third silicon oxide film formed on the second silicon oxide film by a chemical vapor-phase deposition method. A hybrid microwave integrated circuit is manufactured in which the above-mentioned thin-film capacitors are used as input/output coupling and DC blocking capacitors, bypass capacitors and impedance matching capacitors.

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