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81. 发明授权

US5897979A Method of forming multiple layer attenuating phase shifting masks 失效
标题翻译：形成多层衰减相移掩模的方法
公开(公告)号：US5897979A
公开(公告)日：1999-04-27
申请号：US33433
申请日：1998-03-02
申请人： San-De Tzu , Jia-Jing Wang , Chin-Chiang Tu , Wen-Hong Huang
发明人： San-De Tzu , Jia-Jing Wang , Chin-Chiang Tu , Wen-Hong Huang
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F1/142
摘要： This invention describes a new method of forming a double layer attenuating phase shifting mask. A first pattern is formed in a layer of attenuating phase shifting material and an alignment pattern is formed in a layer of opaque material. A first resist is used to form the first pattern. A pellicle is used to restrict the deposition of a second resist to the alignment region of the mask only and as a result neither the first resist nor the second resist must withstand dry etching steps. The first resist is removed before the step of forming the first pattern in the attenuating phase shifting material and cleaning before is step is carried out is thereby improved.
摘要翻译：本发明描述了形成双层衰减相移掩模的新方法。在衰减相移材料层中形成第一图案，并且在不透明材料层中形成对准图案。使用第一抗蚀剂来形成第一图案。防护薄膜组件仅用于限制第二抗蚀剂沉积到掩模的对准区域，因此第一抗蚀剂和第二抗蚀剂都不能经受干蚀刻步骤。在衰减相移材料中形成第一图案的步骤之前去除第一抗蚀剂，从而提高步骤之前的清洁。

82. 发明授权

US5897976A Attenuating embedded phase shift photomask blanks 失效
标题翻译：衰减嵌入式相移光掩模毛坯
公开(公告)号：US5897976A
公开(公告)日：1999-04-27
申请号：US797442
申请日：1997-02-10
申请人： Peter Francis Carcia , Roger Harquail French
发明人： Peter Francis Carcia , Roger Harquail French
IPC分类号： H01L21/027 , G03F1/00 , G03F1/32 , G06F9/00
CPC分类号： G03F1/32
摘要： Attenuating embedded phase shift photomask blanks capable of producing a phase shift of 180.degree. and having an optical transmissivity of at least 0.001 at selected lithographic wavelengths
摘要翻译：衰减的嵌入式相移光掩模坯料能够产生180°的相移并且在所选择的光刻波长<400nm处具有至少0.001的光学透射率，包括至少一层铝化合物和至少一种更光学吸收的组分比选择的光刻波长<400nm的铝化合物，并且通过将至少一层铝化合物和至少一种比铝化合物更光学吸收的成分沉积到基底上而制成。

83. 发明授权

US5881125A Attenuated phase-shifted reticle using sub-resolution pattern 失效
标题翻译：使用子分辨率图案的衰减相移掩模版
公开(公告)号：US5881125A
公开(公告)日：1999-03-09
申请号：US952061
申请日：1992-09-25
申请人： Giang T. Dao
发明人： Giang T. Dao
IPC分类号： G03F1/32 , H01L21/30 , G03F7/20 , B05D3/06
CPC分类号： G03F1/32
摘要： An attenuated phase-shifted reticle. The disclosed reticle comprises a sub-resolution pattern, in regions other than the features to be formed. The sub-resolution pattern transmits a substantially uniform, attenuated radiation intensity. The features are phase-shifted relative to the sub-resolution pattern, such that light transmitted through them is approximately 180.degree. out of phase compared with the attenuated radiation transmitted through the sub-resolution pattern surrounding the features. In this way, the sub-resolution pattern acts as a phase-shifter for the features.
摘要翻译：衰减的相移掩模版。所公开的掩模版包括除了要形成的特征之外的区域中的子分辨率图案。子分辨率图案发射基本均匀的衰减的辐射强度。这些特征相对于子分辨率图案是相移的，使得透过它们的光与通过围绕特征的子分辨率图案传输的衰减辐射相差大约180°。以这种方式，子分辨率图案用作特征的移相器。

84. 发明授权

US5853922A Phase shifting mask, manufacturing method thereof, and exposure method using such a phase shifting mask 失效
公开(公告)号：US5853922A
公开(公告)日：1998-12-29
申请号：US925909
申请日：1997-09-09
申请人： Shuji Nakao
发明人： Shuji Nakao
IPC分类号： G03F1/29 , G03F1/30 , G03F1/32 , G03F1/68 , G03F1/80 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F1/30 , G03F1/26 , G03F1/32 , G03F7/70058 , G03F7/70283
摘要： A quartz substrate includes a first light transmitting portion and a second light transmitting portion which transmit exposure light. The first and second light transmitting portions are formed such that exposure light transmitted through respective light transmitting portions are 180.degree. out of phase with each other. A semi-light shielding film is located between first and second light transmitting portion and formed in a part of first and second light transmitting portions. Also, semi-light shielding film has transmittance of at least 3% and not more than 30%.

85. 发明授权

US5851706A Phase shift masks including chromium oxide and alumina phase shifter patterns, and methods of manufacturing and using the same 失效
标题翻译：包括氧化铬和氧化铝移相器图案的相移掩模，及其制造和使用方法
公开(公告)号：US5851706A
公开(公告)日：1998-12-22
申请号：US882719
申请日：1997-06-25
申请人： Sung-chul Lim , Sang-gyun Woo , Ho-young Kang , Kwang-soo No
发明人： Sung-chul Lim , Sang-gyun Woo , Ho-young Kang , Kwang-soo No
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G02F9/00
CPC分类号： G03F1/32 , Y10T428/24926
摘要： A half tone phase shift mask includes a substrate which is transparent with respect to exposure radiation and a phase shifter pattern on the substrate. The phase shifter pattern comprises chromium oxide (Cr.sub.2 O.sub.3) and alumina (Al.sub.2 O.sub.3). Fine patterns can therefore be formed using phase shift masking of exposure radiation having a 193 nm wavelength, such as light from an ArF excimer laser.
摘要翻译：半色调相移掩模包括相对于曝光辐射透明的衬底和在衬底上的移相器图案。移相器图案包括氧化铬（Cr 2 O 3）和氧化铝（Al 2 O 3）。因此，可以使用具有193nm波长的曝光辐射（例如来自ArF准分子激光器的光）的相移掩蔽来形成精细图案。

86. 发明授权

US5851703A Photomask and pattern forming method employing the same 失效
公开(公告)号：US5851703A
公开(公告)日：1998-12-22
申请号：US904754
申请日：1997-08-01
申请人： Norio Hasegawa , Fumio Murai , Katsuya Hayano
发明人： Norio Hasegawa , Fumio Murai , Katsuya Hayano
IPC分类号： G03F1/00 , G03F1/26 , G03F1/29 , G03F1/32 , G03F1/68 , G03F7/20 , H01L21/027 , H01L21/30 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F1/29 , G03F7/70066 , G03F7/2022
摘要： A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask.

87. 发明授权

US5851701A Atom lithographic mask having diffraction grating and attenuated phase shifters 失效
$Atom lithographic mask having diffraction grating and attenuated phase shifters$
标题翻译：具有衍射光栅和衰减移相器的原子光刻掩模
公开(公告)号：US5851701A
公开(公告)日：1998-12-22
申请号：US831066
申请日：1997-04-01
申请人： J. Brett Rolson
发明人： J. Brett Rolson
IPC分类号： G03F1/26 , G03F1/32 , G03F7/20 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F7/70091 , G03F7/70158 , G03F7/70283
摘要： An ATOM lithographic mask includes a transparent substrate having a pattern of attenuated phase shifters and a diffraction grating aligned with the attenuated phase shifters. The attenuated phase shifters form the primary mask pattern, while the diffraction grating diffracts exposure energy directed through the mask to provide off axis illumination for the attenuated phase shifters. The diffraction grating includes chromeless phase shifters formed using an additive or subtractive process. Both the attenuated phase shifters and diffraction grating can be formed as simple line-space patterns or in other patterns as required. In an alternate embodiment the diffraction grating is formed on a separate mask.
摘要翻译： ATOM光刻掩模包括具有衰减移相器的图案的透明衬底和与衰减的移相器对准的衍射光栅。衰减的移相器形成主掩模图案，而衍射光栅衍射通过掩模引导的曝光能量，以为衰减的移相器提供离轴照明。衍射光栅包括使用加法或减法处理形成的无铬移相器。衰减的移相器和衍射光栅都可以形成为简单的线空间图案或根据需要形成其他图案。在替代实施例中，衍射光栅形成在单独的掩模上。

88. 发明授权

US5849439A Method for preparing phase shift mask blank, and phase mask 失效
标题翻译：制备相移掩模空白的方法和相位掩模
公开(公告)号：US5849439A
公开(公告)日：1998-12-15
申请号：US780123
申请日：1996-12-26
申请人： Masaru Mitsui
发明人： Masaru Mitsui
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32
摘要： A light semitransmittable film of a half tone type phase shift mask blank is formed from a thin film comprising a material including oxygen, nitrogen, silicon and a metal as main constitutional components. In this case, the above-mentioned thin film is formed on a transparent substrate by a reactive sputtering process using a mixed target of molybdenum and silicon. At this time, a mixed gas of an inert gas and nitrous oxide is allowed to flow as an atmosphere gas, and the flow rate of the nitrous oxide gas is controlled within the range of 25 sccm or less to adjust the flow rate, whereby transmittance and film thickness can be controlled.
摘要翻译：作为主要构成成分，由含有氧，氮，硅和金属的材料构成的薄膜形成半色调型相移掩模坯料的半透射膜。在这种情况下，通过使用钼和硅的混合靶的反应溅射法在透明基板上形成上述薄膜。此时，惰性气体和一氧化二氮的混合气体作为气氛气体流动，并且一氧化二氮气体的流量被控制在25sccm以下的范围内以调节流量，由此透射率并且可以控制膜厚度。

89. 发明授权

US5830607A Phase shift mask and manufacturing method thereof and exposure method using phase shift mask 失效
标题翻译：相移掩模及其制造方法以及使用相移掩模的曝光方法
公开(公告)号：US5830607A
公开(公告)日：1998-11-03
申请号：US864005
申请日：1997-05-27
申请人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki , Kouichiro Narimatsu , Shigenori Yamashita
发明人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki , Kouichiro Narimatsu , Shigenori Yamashita
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F1/38 , G03F1/54 , G03F1/80 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F1/38 , G03F1/54 , G03F1/80
摘要： A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide, or a molybdenum silicide oxide, or a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of at least 2% and less than 5%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film, or a molybdenum silicide oxide film, or a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.
摘要翻译：相移掩模的第二光透射部分由硅化钼化硅氧化物或硅化钼氧化物或氧化铬或氧化铬或碳化铬氮化物氧化物膜形成，其转换透射曝光光的相位 180°，透光率至少为2％且小于5％。在第二光透射部分的制造方法中，通过溅射法形成硅化钼硅化物氧化物膜或硅化钼氧化物膜，或氮氧化铬膜或氧化铬膜，或碳化氮化物氮化物膜。因此，利用传统的溅射装置，可以形成第二光透射部分，另外，仅需要一次移相器部分的蚀刻处理，从而可以减少制造过程中的缺陷概率和误差。

90. 发明授权

US5792596A Pattern forming method 失效
标题翻译：图案形成方法
公开(公告)号：US5792596A
公开(公告)日：1998-08-11
申请号：US595916
申请日：1996-02-06
申请人： Tadao Yasuzato , Shinji Ishida , Kunihiko Kasama , Yoko Iwabuchi
发明人： Tadao Yasuzato , Shinji Ishida , Kunihiko Kasama , Yoko Iwabuchi
IPC分类号： G03F1/32 , G03F1/68 , G03F7/20 , G03F7/38 , H01L21/027 , G03F7/207
CPC分类号： G03F7/70333 , G03F7/2002 , G03F7/70433
摘要： In a method of forming a pattern, a photo-mask including a desired pattern is provided. A photo-sensitive resin film is spin-coated on a semiconductor substrate. Subsequently, the surface of the photo-sensitive resin film is changed to have a resistivity against a development solution. Next, light is illuminated to transmit the photo-mask. As a result, the resistivity of only the surface portion of the photo-sensitive resin film corresponding to the desired pattern is decreased based on the property of photo-sensitive resin film by the light having transmitted the photo-mask. Last, the photo-sensitive layer is developed with the development solution.
摘要翻译：在形成图案的方法中，提供包括期望图案的光掩模。将感光树脂膜旋涂在半导体衬底上。随后，将感光树脂膜的表面改变成对显影液具有电阻率。接下来，照亮光以传输照相掩模。结果，基于通过光掩模的光的光敏树脂膜的性质，仅使与所需图案相对应的感光树脂膜的表面部分的电阻降低。最后，光敏层是用开发解决方案开发的。

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