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81. 发明申请

US20170107641A1 SINGLE- AND/OR MULTI-CHARGED GAS ION BEAM TREATMENT METHOD FOR PRODUCING AN ANTI-GLARE SAPPHIRE MATERIAL 审中-公开
公开(公告)号：US20170107641A1
公开(公告)日：2017-04-20
申请号：US15312572
申请日：2015-03-23
申请人： QUERTECH
发明人： Denis Busardo , Frédéric Guernalec
IPC分类号： C30B29/20 , C23C14/48 , G02B1/02 , G06F3/044 , G02B1/11 , C30B33/04 , C23C14/00
CPC分类号： C23C14/0015 , C01F7/021 , C23C14/48 , C30B29/20 , C30B33/04 , G02B1/02 , G02B1/11 , G02B1/113 , G02B1/12 , G06F3/044 , G06F2203/04103
摘要： A treatment method of a sapphire material, said method comprising bombardment of a surface of the sapphire material, said surface facing a medium different from the sapphire material, by a single- and/or multi-charged gas ion beam so as to produce an ion implanted layer in the sapphire material, wherein the ions are selected from ions of the elements from the list consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), boron (B), carbon (C), nitrogen (N), oxygen (O), fluorine (F), silicon (Si), phosphorus (P) and sulphur (S). Use of said method to obtain a capacitive touch panel having a high transmission in the visible range.

82. 发明授权

US09617639B2 Surface-tensioned sapphire plate 有权
公开(公告)号：US09617639B2
公开(公告)日：2017-04-11
申请号：US14453065
申请日：2014-08-06
申请人： APPLE INC.
发明人： Rudolf Beckmann , Markus Kress
IPC分类号： C23C16/513 , C23C14/34 , C23C14/58 , C03C17/245 , C30B29/20 , C23C14/08 , C23C16/40
CPC分类号： C23C16/513 , C03C17/245 , C23C14/081 , C23C14/34 , C23C14/582 , C23C16/403 , C30B29/20 , Y10T428/24942 , Y10T428/265 , Y10T428/266
摘要： A surface-tensioned sapphire plate and a corresponding manufacturing process. The plate may include a planar sapphire substrate and at least one layer disposed on the surface of the substrate for tensing the substrate. The layer may include at least 50 wt.-% of aluminum oxide (Al2O3). The manufacturing process for producing of a sapphire plate may include providing a planar sapphire substrate, and coating at least one surface of the substrate with a layer tensing the substrate. The layer may include at least 50 wt.-% of aluminum oxide (Al2O3).

83. 发明申请

US20170058429A1 Method for Growing Sapphire Crystal 审中-公开
标题翻译：生长蓝宝石水晶的方法
公开(公告)号：US20170058429A1
公开(公告)日：2017-03-02
申请号：US14841744
申请日：2015-09-01
申请人： Yu-Feng Chuang , Ying-Jen Chuang
发明人： Yu-Feng Chuang
IPC分类号： C30B29/20 , C30B11/02
CPC分类号： C30B29/20 , C30B11/00
摘要： A method includes grinding alumina powder into alumina particles with ultrafine particle powder, performing a purification process so that the alumina particles have a purity greater than 99.999%, processing the alumina particles by a spray dryer, processing the alumina particles by a sheet molding compound to produce an alumina material, and placing the alumina material in a vacuum super high temperature furnace to have a crystal growth which includes placing the alumina material in a predetermined crucible in the vacuum super high temperature furnace, preburning the alumina material to form a half-baked alumina cake, heating and increasing a temperature of the alumina cake so that the alumina cake is disposed at a melted state until the crystal growth is finished, and curing the alumina cake that is melted so as to form a sapphire crystal.
摘要翻译：一种方法包括用超细颗粒粉末将氧化铝粉末研磨成氧化铝颗粒，进行纯化处理，使得氧化铝颗粒的纯度大于99.999％，通过喷雾干燥器处理氧化铝颗粒，通过片状模塑料将氧化铝颗粒加工成生产氧化铝材料，并将氧化铝材料放置在真空超高温炉中以具有晶体生长，其包括将氧化铝材料放置在真空超高温炉中的预定坩埚中，预先煅烧氧化铝材料以形成半烘氧化铝滤饼，加热并提高氧化铝滤饼的温度，使得氧化铝滤饼处于熔融状态直到晶体生长结束，并固化熔化的氧化铝滤饼以形成蓝宝石晶体。

84. 发明申请

US20170047220A1 NITROGEN-POLAR SEMIPOLAR GAN LAYERS AND DEVICES ON SAPPHIRE SUBSTRATES 有权
标题翻译：硝基极性二极管和蓝宝石衬底上的器件
公开(公告)号：US20170047220A1
公开(公告)日：2017-02-16
申请号：US15304135
申请日：2015-04-15
申请人： Yale University
发明人： Jung Han , Benjamin Leung
IPC分类号： H01L21/02 , H01L21/306 , C30B29/20 , H01L33/00 , C30B25/18 , C30B29/40 , H01L21/308 , H01L33/32
CPC分类号： H01L21/0254 , C30B25/186 , C30B29/20 , C30B29/406 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/30604 , H01L21/3086 , H01L33/007 , H01L33/32
摘要： Methods and structures for forming epitaxial layers of semipolar III-nitride materials on patterned sapphire substrates are described. Semi-nitrogen-polar GaN may be grown from inclined c-plane facets of sapphire and coalesced to form a continuous layer of (2021) GaN over the sapphire substrate. Nitridation of the sapphire and a low-temperature GaN buffer layer is used to form semi-nitrogen-polar GaN.
摘要翻译：描述了在图案化蓝宝石衬底上形成半极性III族氮化物材料的外延层的方法和结构。半氮极化GaN可以从蓝宝石的斜面c面生长，并且在蓝宝石衬底上形成连续的（2021）GaN层。使用蓝宝石和低温GaN缓冲层的氮化来形成半氮极极化GaN。

85. 发明申请

US20160298261A1 Method for producing a composite body having at least one functional layer, or for further production of electronic or opto-electronic components 有权
标题翻译：用于制造具有至少一个功能层或用于进一步生产电子或光电子部件的复合体的方法
公开(公告)号：US20160298261A1
公开(公告)日：2016-10-13
申请号：US15037854
申请日：2014-11-17
申请人： AIXATECH GMBH
发明人： Yilmaz Dikme
IPC分类号： C30B25/18 , C23C14/00 , C30B25/06 , H01L21/02 , C30B29/20 , C30B29/06 , H01L29/04 , C23C14/02 , C30B29/40
CPC分类号： C30B25/186 , C23C14/0036 , C23C14/022 , C23C14/024 , C30B23/025 , C30B25/06 , C30B25/18 , C30B29/06 , C30B29/20 , C30B29/403 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L29/04
摘要： The invention relates to a process for producing a composite body (36) having at least one functional layer or for the further use for producing an electronic or optoelectronic component (40, 42, 44). The composite body (36) is in the form of a layer structure and comprises at least one substrate (34), which is in the form of a plate and has at least one planar substrate surface, and at least one substantially polycrystalline or at least one substantially single-crystal layer (38), which comprises at least one compound semiconductor, a ceramic material or a metallic hard material.The process is characterized by the following steps: heating at least part of the planar substrate surface to a temperature of at least 100° C. and at most 550° C.; cleaning the substrate surface by supplying hydrogen from a first material source (20) and a plasma produced specifically therefor; terminating the substrate surface by applying carbon, nitrogen or oxygen from the first material source (20) or a second material source (22) and a plasma produced specifically therefor; and growing the at least one layer (38) by supplying material components of the compound semiconductor, of the ceramic material or of the metallic hard material from the first material source (20) and the second material source (22) to the at least one planar substrate surface. The invention also relates to the use of the composite body (36) produced according to one of the disclosed embodiments of the process or a combination thereof for producing an electronic or optoelectronic component.
摘要翻译：本发明还涉及根据所公开的方法的一个实施方案生产的复合体（36）或其组合用于生产电子或光电子部件的用途。

86. 发明申请

US20160281259A1 CONTROLLING A TEMPERATURE OF A CRUCIBLE INSIDE AN OVEN 审中-公开
标题翻译：控制烤箱内部可溶性的温度
公开(公告)号：US20160281259A1
公开(公告)日：2016-09-29
申请号：US15034841
申请日：2014-11-03
申请人： EBNER Industrieofenbau GmbH
发明人： Bernard D. JONES , Dean C. SKELTON , Thomas S. MCGEE , Robert EBNER
IPC分类号： C30B11/00 , C30B29/20
CPC分类号： C30B11/002 , C30B11/003 , C30B11/006 , C30B29/20 , C30B35/00
摘要： Embodiments of the present invention relate to a furnace system for growing crystals. The furnace system comprises a crucible for growing a crystal and a furnace comprising a housing having an inner volume. The housing comprises a through hole connecting the inner volume with an environment of the housing. An insulation plug is movably insertable into the through hole for controlling a heat extraction out of the crucible by radiation, wherein the insulation plug is free of a force transmitting contact with the crucible.
摘要翻译：本发明的实施例涉及一种用于生长晶体的炉系统。炉系统包括用于生长晶体的坩埚和包括具有内部容积的壳体的炉。壳体包括将内部容积与壳体的环境连接的通孔。绝缘插头可移动地插入到通孔中，用于通过辐射控制从坩埚中的热量提取，其中绝缘插头没有与坩埚的力传递接触。

87. 发明申请

US20160145765A1 GARNET SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译： GARNET单晶及其制造方法
公开(公告)号：US20160145765A1
公开(公告)日：2016-05-26
申请号：US14787954
申请日：2014-03-20
申请人： SUMITOMO METAL MINING CO., LTD
发明人： Masayoshi MATSUI , Kazuki TATSUMIYA , Fumiaki ISHIDA
IPC分类号： C30B15/30 , G02F1/09 , G02F1/00 , C30B29/20
CPC分类号： C30B15/30 , C30B15/20 , C30B29/20 , C30B29/28 , G02F1/0036 , G02F1/093
摘要： [Object] To provide a high-quality, transparent garnet single crystal with suppressed cell growth that would otherwise lead to partially inhomogeneous crystal composition, and a method for producing the garnet single crystal. [Solving means] The garnet single crystal is grown by bringing a seed crystal into contact with a raw-material melt in a crucible disposed inside a chamber and pulling, while rotating, the seed crystal. The garnet single crystal is characterized by being represented by a general formula: (Tb3-xScx) (Sc2-yAly)Al3O12-z (provided that 0.11≦x≦0.14, and 0.17≦y≦0.23). The garnet single crystal is grown as follows. First, a mixture powder containing 20.9 to 21.2% by mole terbium oxide, 32.7 to 33.3% by mole scandium oxide, and the balance of aluminium oxide and unavoidable impurities is filled into the crucible and melted. Then, while a nitrogen gas is supplied into the chamber, the number of rotations of the seed crystal is set to 5 to 20 rpm, and the rate of pulling the seed crystal is set to 0.3 to 0.8 mm/h for the growth.
摘要翻译：提供具有抑制的细胞生长的高品质，透明的石榴石单晶，否则会导致部分不均匀的晶体组成，以及生产石榴石单晶的方法。 [解决方案]石榴石单晶通过使晶种与设置在室内的坩埚中的原料熔融物接触并在旋转晶片的同时拉动而生长。石榴石单晶的特征在于以下通式表示：（Tb 3-x Sc x）（Sc 2-y Al y）Al 3 O 12-z（条件是0.11＆nlE; x＆nlE; 0.14和0.17＆amp; nlE; y＆nlE; 0.23）。石榴石单晶生长如下。首先，将含有20.9〜21.2摩尔铽氧化物，32.7〜33.3摩尔钪氧化物，余量的氧化铝和不可避免的杂质的混合粉末填充到坩埚中并熔融。然后，在向室内供给氮气的同时，将晶种的旋转数设定为5〜20rpm，将晶种的拉拔速度设定为0.3〜0.8mm / h。

88. 发明申请

US20160138182A1 METHODS FOR FORMING MIXED METAL OXIDE EPITAXIAL FILMS 审中-公开
标题翻译：形成混合金属氧化物外延膜的方法
公开(公告)号：US20160138182A1
公开(公告)日：2016-05-19
申请号：US14546199
申请日：2014-11-18
申请人： Wisconsin Alumni Research Foundation
发明人： Thomas F. Kuech
IPC分类号： C30B1/02 , C30B29/26 , H01L21/02 , C30B29/68 , H01L29/20 , C30B29/20 , C30B29/40
CPC分类号： C30B1/023 , C30B25/183 , C30B25/186 , C30B29/26 , C30B29/406 , H01L21/02488 , H01L21/0254
摘要： Provided are methods for forming a mixed metal oxide epitaxial film (e.g., ScAlMgO4) comprising growing an amorphous layer of a mixed metal oxide on a substrate (e.g., crystalline sapphire) via atomic layer deposition and annealing the amorphous layer of the mixed metal oxide at an elevated temperature for a period of time sufficient to induce epitaxial solid-state re-growth of the amorphous layer of the mixed metal oxide, thereby forming the mixed metal oxide epitaxial film. The method may further comprise growing a layer of a semiconductor (e.g., GaN) on the mixed metal oxide epitaxial film.
摘要翻译：提供了用于形成混合金属氧化物外延膜（例如，ScAlMgO 4）的方法，包括通过原子层沉积在复合金属氧化物的非晶层上生长混合金属氧化物的非晶层（例如，结晶蓝宝石），并将复合金属氧化物的非晶层退火升高温度足以诱导混合金属氧化物的非晶层的外延固态再生长的时间，从而形成混合金属氧化物外延膜。该方法还可以包括在混合金属氧化物外延膜上生长半导体层（例如，GaN）层。

89. 发明申请

US20160076168A1 SUBSTRATES FOR GROWING GROUP III NITRIDE CRYSTALS AND THEIR FABRICATION METHOD 审中-公开
公开(公告)号：US20160076168A1
公开(公告)日：2016-03-17
申请号：US14849566
申请日：2015-09-09
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO
IPC分类号： C30B25/18 , C30B29/40 , C30B29/20
CPC分类号： C30B25/18 , C30B29/406 , C30B33/06 , H01L21/02005 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02658
摘要： In one instance, the invention provides a substrate for growing a thick layer of group III nitride. The substrate has a first surface prepared for epitaxial growth of group III nitride and a second surface, opposite to the first surface, having a plurality of grooves. The invention also provides a method of producing a thick layer or a bulk crystal of group III nitride using a grooved substrate. The grooved substrate in one configuration grows a thick layer or a bulk crystal of group III nitride with reduced bow and/or spontaneous separation from the substrate.

90. 发明申请

US20160032484A1 DEVICE FOR DETECTING ISLAND POSITION OF SINGLE CRYSTAL INGOT GROWING FURNACE AND METHOD FOR DETECTING ISLAND POSITION 审中-公开
标题翻译：用于检测单晶体生长炉的岛状位置的装置和检测岛屿位置的方法
公开(公告)号：US20160032484A1
公开(公告)日：2016-02-04
申请号：US14872309
申请日：2015-10-01
申请人： Korea Institute of Industrial Technology
发明人： Sung Ryul Kim , Churl Min Kim , Hyung Ho Jo , Youngchul Lee , Hyoung Jae Kim
IPC分类号： C30B15/20 , C30B29/20 , C30B15/30
CPC分类号： C30B15/20 , C30B15/26 , C30B15/30 , C30B29/20
摘要： The present invention provides the device for detecting an island position of an ingot growing furnace, comprising a control means for detecting the position of an island by analyzing the image obtained by the photographing means, wherein the control means derives a plurality of singularities with respect to the temperature or brightness from the image, derives a plurality of connection lines respectively forming straight lines by the mutual connection of a series of the singularities, considers an area in which the most intersections are generated as an island among areas in which the plurality of connection lines intersect each other, and determines whether the island is positioned in a seed contact area in which the seed is set to be lowered.
摘要翻译：本发明提供了一种用于检测锭生长炉的岛状位置的装置，包括：用于通过分析由拍摄装置获得的图像来检测岛的位置的控制装置，其中控制装置相对于来自图像的温度或亮度通过一系列奇异点的相互连接而导出分别形成直线的多条连接线，将多个连接线中的多个相交的区域视为其中多个连接线彼此相交，并且确定岛是否位于种子被设置为降低的种子接触区域中。

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