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81. 发明授权

US10156019B2 Electrodeposition system and method incorporating an anode having a back side capacitive element 有权
公开(公告)号：US10156019B2
公开(公告)日：2018-12-18
申请号：US15802619
申请日：2017-11-03
申请人： International Business Machines Corporation , Ancosys GmbH
发明人： Charles L. Arvin , Jürg Stahl
IPC分类号： C25D3/56 , C25D21/00 , C23F13/00 , C25D3/30 , C25D3/46 , C25D21/12 , C25D3/60 , C25D3/64 , C25D17/10
摘要： Disclosed are an electrodeposition system and method with an anode assembly comprising a capacitor comprising a first conductive plate (i.e., an anode) with a frontside having a surface exposed to a plating solution, a second conductive plate on a backside of the first conductive plate, and a dielectric layer between the two conductive plates. During a non-plating mode, a power source, having positive and negative terminals connected to the first and second conductive plates, respectively, is turned on, thereby polarizing the first conductive plate (i.e., the anode) relative to the second conductive plate to prevent degradation of the anode and/or plating solution. During an active plating mode, another power source, having positive and negative terminals connected to the first conductive plate (i.e., the anode) and a cathode, respectively, is turned on, thereby polarizing the anode relative to the cathode in order to deposit a plated layer on a workpiece.

82. 发明申请

US20180051385A1 ELECTRODEPOSITION SYSTEM AND METHOD INCORPORATING AN ANODE HAVING A BACK SIDE CAPACITIVE ELEMENT 审中-公开
公开(公告)号：US20180051385A1
公开(公告)日：2018-02-22
申请号：US15802619
申请日：2017-11-03
申请人： International Business Machines Corporation , Ancosys GmbH
发明人： Charles L. Arvin , Jürg Stahl
IPC分类号： C25D3/56 , C25D21/12 , C25D21/00 , C25D3/64 , C23F13/00 , C25D3/60 , C25D3/46 , C25D3/30 , C25D17/10
CPC分类号： C25D3/56 , C23F13/005 , C25D3/30 , C25D3/46 , C25D3/60 , C25D3/64 , C25D17/10 , C25D21/00 , C25D21/12
摘要： Disclosed are an electrodeposition system and method with an anode assembly comprising a capacitor comprising a first conductive plate (i.e., an anode) with a frontside having a surface exposed to a plating solution, a second conductive plate on a backside of the first conductive plate, and a dielectric layer between the two conductive plates. During a non-plating mode, a power source, having positive and negative terminals connected to the first and second conductive plates, respectively, is turned on, thereby polarizing the first conductive plate (i.e., the anode) relative to the second conductive plate to prevent degradation of the anode and/or plating solution. During an active plating mode, another power source, having positive and negative terminals connected to the first conductive plate (i.e., the anode) and a cathode, respectively, is turned on, thereby polarizing the anode relative to the cathode in order to deposit a plated layer on a workpiece.

83. 发明授权

US09863051B2 Electrodeposition system and method incorporating an anode having a back side capacitive element 有权
公开(公告)号：US09863051B2
公开(公告)日：2018-01-09
申请号：US14831252
申请日：2015-08-20
申请人： International Business Machines Corporation , Ancosys GmbH
发明人： Charles L. Arvin , Jürg Stahl
IPC分类号： C25D3/56 , C25D21/00 , C23F13/00 , C25D3/30 , C25D3/46 , C25D21/12 , C25D3/60 , C25D3/64 , C25D17/10
CPC分类号： C25D3/56 , C23F13/005 , C25D3/30 , C25D3/46 , C25D3/60 , C25D3/64 , C25D17/10 , C25D21/00 , C25D21/12
摘要： Disclosed are an electrodeposition system and method with an anode assembly comprising a capacitor comprising a first conductive plate (i.e., an anode) with a frontside having a surface exposed to a plating solution, a second conductive plate on a backside of the first conductive plate, and a dielectric layer between the two conductive plates. During a non-plating mode, a power source, having positive and negative terminals connected to the first and second conductive plates, respectively, is turned on, thereby polarizing the first conductive plate (i.e., the anode) relative to the second conductive plate to prevent degradation of the anode and/or plating solution. During an active plating mode, another power source, having positive and negative terminals connected to the first conductive plate (i.e., the anode) and a cathode, respectively, is turned on, thereby polarizing the anode relative to the cathode in order to deposit a plated layer on a workpiece.

84. 发明申请

US20160177464A1 FILM DEPOSITION DEVICE OF METAL FILM AND FILM DEPOSITION METHOD 有权
标题翻译：金属膜和薄膜沉积方法的膜沉积装置
公开(公告)号：US20160177464A1
公开(公告)日：2016-06-23
申请号：US14910365
申请日：2014-08-04
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Yuki SATO , Hiroshi YANAGIMOTO , Motoki HIRAOKI
IPC分类号： C25D5/22 , C25D21/00 , C25D17/00
CPC分类号： C25D5/22 , C25D5/02 , C25D5/08 , C25D17/00 , C25D17/002 , C25D17/10 , C25D17/14 , C25D21/00
摘要： A film deposition device (1A) of a metal film includes: a solid electrolyte membrane (13) that allows metal ions to be contained; a positive electrode (11) made of a porous body; a power supply part (14) that applies a voltage between the positive electrode and a base material; and a contact pressurization part (20) that comes into contact with the positive electrode (11) and uniformly pressurizes a film deposition region of a surface of the base material by the solid electrolyte membrane (13) via the positive electrode (11). The positive electrode (11) made of the porous body is capable of transmitting a solution containing the metal ions such that the metal ions are supplied to the solid electrolyte membrane. The power supply part (14) applies a voltage between the positive electrode and the base material so that the metal film made of the metal is deposited.
摘要翻译：金属膜的成膜装置（1A）包括：容纳金属离子的固体电解质膜（13）; 由多孔体制成的正极（11）电源部，其在正极和基材之间施加电压; 和与正极（11）接触的接触加压部（20），并通过正极（11）使固体电解质膜（13）对基材的表面的成膜区域均匀地加压。由多孔体制成的正极（11）能够传输含有金属离子的溶液，使得金属离子被供给到固体电解质膜。电源部件（14）在正电极和基体材料之间施加电压，使得由金属制成的金属膜被沉积。

85. 发明申请

US20160174389A1 SYSTEM AND METHOD FOR ELECTROPLATING OF HOLE SURFACES 审中-公开
标题翻译：用于电镀孔表面的系统和方法
公开(公告)号：US20160174389A1
公开(公告)日：2016-06-16
申请号：US15050173
申请日：2016-02-22
申请人： Teledyne Instruments, Inc.
发明人： John Bradley Hunter , Chester P. Piechowiak , Theodore M. Heummler
IPC分类号： H05K3/42 , C25D21/00 , C25D5/02
CPC分类号： H05K3/424 , C23C18/1653 , C25D5/02 , C25D5/026 , C25D5/04 , C25D5/08 , C25D7/04 , C25D17/004 , C25D17/12 , C25D21/00 , C25D21/02 , H05K3/421
摘要： An electroplating method for plating internal surfaces of holes in metal products uses a needle anode associated with an XYZ or multi-direction positioning device to position the needle such that an insertion portion of the needle anode is centered over a hole and inserted to a predetermined depth in the hole, with a discharge end located a predetermined distance from the inner end of the hole. Plating solution is supplied to the needle anode and flows continuously during plating from the discharge end of the needle, through a gap between the needle anode and inner surface of the hole, and out of the open end of the hole into a drain. In one example, the metal object is a terminal of an electrical connector and the hole is a solder cup at a terminal end of the connector.
摘要翻译：用于对金属制品的孔的内表面进行电镀的电镀方法使用与XYZ或多向定位装置相关联的针阳极来定位针，使得针阳极的插入部分位于孔的中心并插入预定的深度在孔中，排出端位于距孔的内端一预定距离处。电镀液被提供给针状阳极，在电镀期间从针的排出端通过针阳极和孔的内表面之间的间隙，并且从孔的开口端流出到排水管内，连续地流动。在一个示例中，金属物体是电连接器的端子，并且该孔是在连接器的终端处的焊杯。

86. 发明申请

US20140284216A1 ELECTROCHEMICAL DEPOSITION CHAMBER 有权
标题翻译：电化学沉积室
公开(公告)号：US20140284216A1
公开(公告)日：2014-09-25
申请号：US14218051
申请日：2014-03-18
申请人： PICOFLUIDICS LIMITED
发明人： John MACNEIL
IPC分类号： C25D21/00 , C25F7/00
CPC分类号： C25D21/00 , C25D17/001 , C25D17/004 , C25D17/02 , C25D21/10 , C25F7/00
摘要： According to the invention an electrochemical deposition or polishing clamber including: a support for a substrate, the support having an in-use position; a housing having an interior surface and a fluid outlet pathway for removing an electrolyte from the chamber, wherein the fluid outlet pathway includes one or more slots which extend into the housing from at least one slotted opening formed in the interior surface; a seal for sealing the housing to a peripheral portion of a surface of a substrate position on the support in its in-use position; and a tilting mechanism for tilting the chamber in order to assist in removing electrolyte from the housing through the fluid outlet pathway.
摘要翻译：根据本发明，电化学沉积或抛光室包括：用于衬底的支撑件，所述支撑件具有使用中的位置; 具有内表面的壳体和用于从所述腔室移除电解质的流体出口路径，其中所述流体出口路径包括从形成在所述内表面中的至少一个开槽开口延伸到所述壳体中的一个或多个槽; 用于将壳体密封到其使用位置上的支撑件上的基板位置的表面的周边部分的密封件; 以及倾斜机构，用于倾斜室，以帮助通过流体出口通道从壳体去除电解质。

87. 发明申请

US20130248361A1 ADJUSTABLE WAFER PLATING SHIELD AND METHOD 有权
标题翻译：可调节水平涂层和方法
公开(公告)号：US20130248361A1
公开(公告)日：2013-09-26
申请号：US13895987
申请日：2013-05-16
申请人： DECA Technologies Inc.
发明人： Rico Sto. Domingo
IPC分类号： C25D17/06 , C25D21/00
CPC分类号： C25D17/06 , C25D17/001 , C25D17/008 , C25D21/00 , Y10T29/49124
摘要： A wafer carrier is described. In one embodiment, the wafer carrier includes a variable aperture shield. The wafer carrier may include an electrically conductive wafer plating jig base having a plurality of concentric overlapping cavities of different depths, each cavity configured to receive a semiconductor wafer of a different size, a plurality of concentric magnetic attractors, at least one positioned within each of the plurality of overlapping cavities, and a cover plate comprising an open center surrounded by a support, the cover plate comprising an attractive material positioned within the support adjacent to the open center and aligned with at least one of the magnetic attractors when the cover plate is positioned over the wafer plating jig base.
摘要翻译：描述晶片载体。在一个实施例中，晶片载体包括可变孔径屏蔽。晶片载体可以包括具有不同深度的多个同心重叠的空腔的导电晶片电镀夹具基座，每个腔被配置为接收不同尺寸的半导体晶片，多个同心磁吸引器，至少一个位于所述多个重叠空腔以及包括由支撑件包围的开放中心的盖板，所述盖板包括位于所述支撑件内的吸引材料，所述吸引材料邻近所述开放中心并且当所述盖板为所述盖板时与所述吸引体中的至少一个对准定位在晶片电镀夹具基座上。

88. 发明申请

US20120152751A1 ELECTROLYTIC COPPER PROCESS USING ANION PERMEABLE BARRIER 有权
标题翻译：电解铜工艺使用阴离子渗透性阻挡层
公开(公告)号：US20120152751A1
公开(公告)日：2012-06-21
申请号：US13406387
申请日：2012-02-27
申请人： Rajesh Baskaran , Robert W. Batz, JR. , Bioh Kim , Tom L. Ritzdorf , John Lee Klocke , Kyle M. Hanson
发明人： Rajesh Baskaran , Robert W. Batz, JR. , Bioh Kim , Tom L. Ritzdorf , John Lee Klocke , Kyle M. Hanson
IPC分类号： C25D21/00
CPC分类号： C25D5/028 , C25D3/12 , C25D3/20 , C25D3/30 , C25D3/34 , C25D3/38 , C25D3/46 , C25D3/54 , C25D5/022 , C25D17/001 , C25D17/002 , C25D21/12 , C25F3/02 , H01L21/2885 , H01L21/76846 , H01L21/76868 , H01L21/76873 , H05K3/423
摘要： Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and a counter electrode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, a counter electrode, a second processing fluid, and an anion permeable barrier layer. The anion permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain anionic species to transfer between the two fluids. Some of the described processes produce deposits over repeated plating cycles that exhibit resistivity values within desired ranges.
摘要翻译：描述了利用第一处理流体和对电极对微特征工件进行电解处理的工艺和系统。使用第一处理流体，对电极，第二处理流体和阴离子可渗透阻挡层对微特征工件进行电解处理。阴离子可渗透阻挡层将第一处理流体与第二处理流体分离，同时允许某些阴离子物质在两种流体之间转移。所描述的一些方法中的一些在反复电镀循环中产生沉积物，其显示出所需范围内的电阻率值。

89. 发明申请

US20120043213A1 ELECTRODEPOSITION BATHS, SYSTEMS AND METHODS 有权
标题翻译：电沉积物，系统和方法
公开(公告)号：US20120043213A1
公开(公告)日：2012-02-23
申请号：US13283870
申请日：2011-10-28
申请人： Alan C. Lund , Nazila Dadvand , John Cahalen , Daniel J. Montville
发明人： Alan C. Lund , Nazila Dadvand , John Cahalen , Daniel J. Montville
IPC分类号： C25D21/00 , C25D3/54
CPC分类号： C25D3/56 , C25D3/562 , C25D21/12 , G01N31/22 , Y10T436/203332 , Y10T436/216
摘要： Electrodeposition baths, systems and methods are provided. In some embodiments, the baths, systems and methods are used to deposit metal alloy coatings.
摘要翻译：提供电沉积浴，系统和方法。在一些实施例中，浴，系统和方法用于沉积金属合金涂层。

90. 发明授权

US07811424B1 Reducing mechanical resonance and improved distribution of fluids in small volume processing of semiconductor materials 有权
标题翻译：在半导体材料的小体积加工中减少机械共振和改善流体分布
公开(公告)号：US07811424B1
公开(公告)日：2010-10-12
申请号：US11205532
申请日：2005-08-16
申请人： Carl Woods , Jeffrey J. Farber
发明人： Carl Woods , Jeffrey J. Farber
IPC分类号： C25D21/00
CPC分类号： C25D5/06 , C25D17/001
摘要： An apparatus for processing a substrate is provided. The apparatus includes a plating head configured to plate a surface of the substrate with a layer of a material using a fluid meniscus between the plating head and a surface of the substrate. The apparatus also includes a fluid meniscus stabilizing apparatus configured to apply a pre-processing fluid to the surface of the substrate before the fluid meniscus is applied to the surface.
摘要翻译：提供了一种用于处理衬底的设备。所述装置包括电镀头，其被配置为使用在所述电镀头和所述衬底的表面之间的流体弯液面的材料层对所述衬底的表面进行平板化。该装置还包括流体弯液面稳定装置，其配置为在流体弯液面施加到表面之前将预处理流体施加到基板的表面。

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