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81. 发明申请

US20160381732A1 HEATING SYSTEM COMPRISING SEMICONDUCTOR LIGHT SOURCES 审中-公开
标题翻译：包含半导体光源的加热系统
公开(公告)号：US20160381732A1
公开(公告)日：2016-12-29
申请号：US15111023
申请日：2015-01-09
申请人： KONINKLIJKE PHILIPS N.V.
发明人： HOLGER MÖENCH , GUENTHER HANS DERRA , STEPHAN GRONENBORN , PAVEL PEKARSKI , JOHANNA SOPHIE KOLB , RALF GORDON CONRADS
IPC分类号： H05B3/00 , H01L51/56 , C30B25/10 , C23C16/48 , C23C16/46 , C30B23/06 , H01L21/67 , H05B1/02
CPC分类号： H05B3/0047 , C23C16/46 , C23C16/481 , C30B23/063 , C30B25/105 , H01L21/67115 , H01L51/56 , H05B1/0233
摘要： The invention describes a heating system (100) and a corresponding method of heating a heating surface (180) of an object (150, 950) to a processing temperature of at least 100° C., wherein the heating system (100) comprises semiconductor light sources (115), and wherein the heating system (100) is adapted to heat an area element of the heating surface (180) with at least 50 semiconductor light sources (115) at the same time. The heating system (100) may be part of a reactor for processing semiconductor structures. The light emitted by means of the semiconductor light sources (115) overlaps at the heating surface (180). Differences of the characteristic of one single semiconductor light source (115) may be blurred at the heating surface (180) such that a homogeneous temperature distribution across a processing surface of a, for example, wafer may be enabled.
摘要翻译：本发明描述了加热系统（100）和将物体（150,950）的加热表面（180）加热到至少100℃的加工温度的相应方法，其中加热系统（100）包括半导体光源（115），并且其中所述加热系统（100）适于同时用至少50个半导体光源（115）加热所述加热表面（180）的区域元件。加热系统（100）可以是用于处理半导体结构的反应器的一部分。通过半导体光源（115）发射的光在加热表面（180）处重叠。一个单个半导体光源（115）的特性的差异可能在加热表面（180）处模糊，使得跨越例如晶片的处理表面的均匀温度分布可能被实现。

82. 发明申请

US20160234881A1 RAPID THERMAL PROCESSING CHAMBER WITH LINEAR CONTROL LAMPS 审中-公开
标题翻译：具有线性控制灯的快速热处理室
公开(公告)号：US20160234881A1
公开(公告)日：2016-08-11
申请号：US15012885
申请日：2016-02-02
申请人： Applied Materials, Inc.
发明人： Preetham RAO , Abhilash J. MAYUR
IPC分类号： H05B3/00 , F27D5/00 , F27B17/00
CPC分类号： H05B3/0047 , F27B17/0025 , F27D5/0037 , H01L21/67115 , H01L21/67248
摘要： A lamphead for thermal processing of a substrate is provided. The lamphead includes a housing having a first edge surrounding a first plane. The lamphead further includes a plurality of segmented lamps disposed within the housing, each segmented lamp aligned substantially parallel to the first plane. Each segmented lamp includes a first end connected to a location on the housing; a first wire segment connected to the first end; a first filament connected to the first wire segment; an intermediate wire segment connected to the first filament; a second filament connected to intermediate wire segment; a second wire segment connected to the second filament; and a second end connected to the second wire segment; where the second end is connected to an opposing location on the housing.
摘要翻译：提供了一种用于基板的热处理的灯头。灯头包括具有围绕第一平面的第一边缘的壳体。灯头还包括设置在壳体内的多个分段灯，每个分段灯基本上平行于第一平面排列。每个分段灯包括连接到壳体上的位置的第一端; 连接到第一端的第一线段; 连接到第一线段的第一灯丝; 连接到第一细丝的中间线段; 连接到中间线段的第二个灯丝; 连接到所述第二细丝的第二线段; 以及连接到所述第二线段的第二端; 其中第二端连接到壳体上的相对位置。

83. 发明申请

US20160227606A1 LAMP HEATING FOR PROCESS CHAMBER 审中-公开
标题翻译：灯泡加热灯
公开(公告)号：US20160227606A1
公开(公告)日：2016-08-04
申请号：US15012495
申请日：2016-02-01
申请人： Applied Materials, Inc.
发明人： Mehmet Tugrul SAMIR , Schubert S. CHU
IPC分类号： H05B3/00 , F26B3/30
CPC分类号： H05B3/0047 , F26B3/30
摘要： A process chamber is provided including a top, a bottom, and a sidewall coupled together to define a volume. A substrate support is disposed in the volume. The process chamber further includes one or more lampheads facing the substrate support, each lamphead comprising an arrangement of lamps disposed along a plane. The arrangement of lamps is defined by a center and a plurality of concentric ring-shaped zones. Each ring-shaped zone is defined by an inner edge and an outer edge and each ring-shaped zone includes three or more alignments of one or more lamps. Each alignment of one or more lamps has a first end extending linearly to a second end that are separated by at least 10 degrees around the center. The first end and the second end are both located within one ring-shaped zone. Each alignment located within a same ring-shaped zone is equidistant to the center.
摘要翻译：提供了一种处理室，其包括联接在一起以限定体积的顶部，底部和侧壁。衬底支撑件设置在体积中。处理室还包括面向衬底支撑件的一个或多个灯头，每个灯头包括沿着平面布置的灯的布置。灯的布置由中心和多个同心环形区限定。每个环形区域由内部边缘和外部边缘限定，并且每个环形区域包括一个或多个灯具的三个或更多对准。一个或多个灯的每个对准具有线性地延伸到围绕中心分开至少10度的第二端的第一端。第一端和第二端都位于一个环形区域内。位于相同环形区域内的每个对准与中心等距。

84. 发明授权

US09394938B2 Internal chamber rotation motor, alternative rotation 有权
标题翻译：内腔旋转电机，替代旋转
公开(公告)号：US09394938B2
公开(公告)日：2016-07-19
申请号：US13921758
申请日：2013-06-19
申请人： Applied Materials, Inc.
发明人： Michael P. Karazim
IPC分类号： A21B2/00 , F26B3/30 , F16C19/14 , F16C32/06 , H02K11/00 , H01L21/67 , H01L21/687
CPC分类号： H05B3/0047 , F16C19/14 , F16C32/0618 , F16C32/0696 , H01L21/67115 , H01L21/68785 , H01L21/68792
摘要： Embodiments of the present invention generally relate to a rotation device in an RTP chamber. The rotation device includes a cylindrical inner race, a plurality of thrust bearings and a plurality of radial bearings. During operation, the bearings create a gas cushion preventing the rotating parts from contacting the stationary parts.
摘要翻译：本发明的实施例一般涉及RTP室中的旋转装置。旋转装置包括圆柱形内圈，多个推力轴承和多个径向轴承。在运行过程中，轴承产生气垫，防止旋转部件与固定部件接触。

85. 发明申请

US20160118278A1 APPARATUS FOR LIQUID TREATMENT OF WAFER SHAPED ARTICLES AND HEATING SYSTEM FOR USE IN SUCH APPARATUS 有权
标题翻译：用于液体处理用于形成这种装置的加热装置的装置
公开(公告)号：US20160118278A1
公开(公告)日：2016-04-28
申请号：US14988498
申请日：2016-01-05
申请人： LAM RESEARCH AG
发明人： Ante Plazonic , Vijay Kumar Badam , Michael Brugger
IPC分类号： H01L21/67 , H05B3/00 , H01L21/687
CPC分类号： H01L21/67115 , F27B5/14 , F27D2003/0087 , H01L21/67023 , H01L21/68728 , H01L21/68764 , H01L21/68785 , H01L21/68792 , H05B3/0047
摘要： An apparatus for treating a disc-shaped article comprises a spin chuck and at least three individually controllable infrared heating elements. The infrared heating elements are mounted in a stationary manner with respect to rotation of said spin chuck. At least the transparent plate positioned between the infrared heating elements and the underside of a wafer is mounted for rotation with the spin chuck. Alternatively, the transparent plate is part of a housing that encloses the infrared heating elements and that rotates with the spin chuck as the heating elements are stationary relative thereto.
摘要翻译：一种用于处理盘状物品的设备包括旋转卡盘和至少三个独立可控的红外加热元件。相对于所述旋转卡盘的旋转，红外加热元件以固定的方式安装。至少位于红外加热元件和晶片下侧之间的透明板被安装成与旋转卡盘一起旋转。或者，透明板是包围红外加热元件的壳体的一部分，并且随着加热元件相对于其而静止，旋转卡盘。

86. 发明授权

US09318359B2 Apparatus for substrate treatment and heating apparatus 有权
标题翻译：基板处理装置及加热装置
公开(公告)号：US09318359B2
公开(公告)日：2016-04-19
申请号：US13886261
申请日：2013-05-02
申请人： AP SYSTEMS INC.
发明人： Il-Hwan Lim , Jang-Woo Shim , Chul-Soo Kim , Seung-Ae Choi
IPC分类号： F26B3/30 , F21V7/00 , H01L21/67 , H05B3/00 , F27B17/00
CPC分类号： H01L21/67115 , F27B17/0025 , H05B3/0047
摘要： The present invention relates to an apparatus for heat-treating a substrate, and more particularly to an apparatus for substrate treatment to perform a heat treatment of a substrate for a flat panel display panel.An apparatus for substrate treatment according to an embodiment of the present invention comprises a processing chamber having a substrate treatment space; a heating housing having a heating lamp that emits radiant energy and a reflecting block that reflects radiant energy emitted from the heating lamp; and a window that maintains a sealing between the processing chamber and the heating housing and transmits the radiant energy to a substrate.
摘要翻译：本发明涉及一种用于对基板进行热处理的装置，更具体地涉及用于对平板显示面板进行基板的热处理的基板处理装置。根据本发明的实施例的用于基板处理的装置包括具有基板处理空间的处理室; 具有发射辐射能的加热灯的加热壳体和反射从加热灯发出的辐射能的反射块; 以及在处理室和加热壳体之间保持密封并将辐射能传递到基板的窗口。

87. 发明申请

US20160079085A1 SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS 有权
标题翻译：半导体制造方法和半导体制造设备
公开(公告)号：US20160079085A1
公开(公告)日：2016-03-17
申请号：US14751309
申请日：2015-06-26
申请人： SCREEN Holdings Co., Ltd.
发明人： Takayuki AOYAMA , Shinichi KATO
IPC分类号： H01L21/324 , H01L21/768 , H05B3/00 , H01L21/04
CPC分类号： H05B3/0047 , H01L21/046 , H01L21/0485 , H01L21/28512 , H01L21/67115 , H01L21/67248 , H01L21/68785 , H01L21/76889
摘要： Flash light is emitted from flash lamps to the surface of a semiconductor substrate on which a metal layer has been formed for one second or less to momentarily raise temperature on the surface of the semiconductor substrate including the metal layer and an impurity region to a processing temperature of 1000° C. or more. Heat treatment is performed by emitting flash light to the surface of the semiconductor substrate in a forming gas atmosphere containing hydrogen. By heating the surface of the semiconductor substrate to a high temperature in the forming gas atmosphere for an extremely short time period, contact resistance can be reduced without desorbing hydrogen taken in the vicinity of an interface of a gate oxide film for hydrogen termination.
摘要翻译：闪光从闪光灯发射到其上形成有金属层的半导体衬底的表面1秒以下，以使包含金属层和杂质区域的半导体衬底的表面上的温度暂时升高至处理温度 1000℃以上。通过在包含氢的形成气体气氛中将闪光发射到半导体衬底的表面进行热处理。通过在非常短的时间内将半导体衬底的表面加热到形成气体气氛中的高温，可以降低接触电阻，而不会在用于氢终止的栅极氧化膜的界面附近脱离氢。

88. 发明申请

US20160027661A1 HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD 有权
标题翻译：热处理设备和热处理方法
公开(公告)号：US20160027661A1
公开(公告)日：2016-01-28
申请号：US14799623
申请日：2015-07-15
申请人： TOKYO ELECTRON LIMITED
发明人： Hidekazu SATO , Hideki TAKAHASHI , Tsutomu YAMAMOTO
IPC分类号： H01L21/324 , H05B3/00
CPC分类号： H05B3/0047 , H01L21/67109 , H05B3/44 , H05B2203/014 , H05B2203/032
摘要： There is provided a heat treatment apparatus, including: a processing container configured to perform a heat treatment on substrates accommodated in the processing container; a heating unit configured to cover an outer circumference of the processing container with a predetermined space defined the heating unit and the processing container; a discharge pipe installed outside of the processing container and within the predetermined space, and configured to communicate with an interior of the processing container to discharge an exhaust gas from the interior of the processing container; and a heat insulating member configured to cover a circumference of the discharge pipe.
摘要翻译：提供一种热处理装置，包括：处理容器，被配置为对容纳在处理容器中的基板进行热处理; 加热单元，其构造成以预定空间覆盖处理容器的外周，限定了加热单元和处理容器; 排出管，其设置在所述处理容器的外部并且在所述预定空间内，并且构造成与所述处理容器的内部连通，以从所述处理容器的内部排出废气; 以及构造成覆盖排出管的周边的绝热构件。

89. 发明申请

US20150359044A1 TUBULAR LIGHT SOURCE HAVING OVERWIND 有权
标题翻译：具有超音速的管状光源
公开(公告)号：US20150359044A1
公开(公告)日：2015-12-10
申请号：US14832490
申请日：2015-08-21
申请人： Applied Materials, Inc.
发明人： Joseph M. RANISH
IPC分类号： H05B3/00 , H05B3/12 , H05B3/02
CPC分类号： H01K5/02 , H01K1/04 , H01K1/10 , H01K1/14 , H01K1/28 , H05B3/0014 , H05B3/0047 , H05B3/12
摘要： Embodiments of the present invention generally relate to a tubular lamp with a coiled filament having an overwind wrapped around the coil. In one embodiment, the tubular lamp has a coiled coil filament, and the coiled coil has an overwind wrapped around the coiled coil.
摘要翻译：本发明的实施例一般涉及一种具有围绕线圈卷绕的缠绕丝线的管状灯。在一个实施例中，管状灯具有卷绕的线圈灯丝，并且卷绕的线圈缠绕在卷绕的线圈周围。

90. 发明申请

US20150289318A1 ANNEALING APPARATUS AND ANNEALING PROCESS 有权
标题翻译：退火设备和退火工艺
公开(公告)号：US20150289318A1
公开(公告)日：2015-10-08
申请号：US14368924
申请日：2013-11-12
申请人： BOE TECHNOLOGY GROUP CO., LTD. , ORDOS YUANSHENG OPTOELECTRONICS CO., LTD.
发明人： Zuqiang Wang
IPC分类号： H05B3/00 , H01L21/67 , H01L21/324
CPC分类号： H05B3/0047 , H01L21/324 , H01L21/67115 , H01L21/6776
摘要： An annealing apparatus includes: a temperature-gradient preheating unit, configured for performing a gradient-preheating process for a substrate that is to be annealed by using a gradient temperature; a high temperature heating unit, configured for performing a high temperature heating process for the preheated substrate; and a shifting device, configured for transporting the substrate from the temperature-gradient preheating unit to the high temperature heating unit when and/or after the substrate is subjected to the gradient-preheating process. The annealing apparatus adopts a gradient heating method to perform a preheating treatment for the substrate, so the annealing efficiency is increased. An annealing process that uses the annealing apparatus is further provided.
摘要翻译：退火装置包括：温度梯度预热单元，被配置为对通过使用梯度温度进行退火的基板进行梯度预热处理; 高温加热单元，被配置为对所述预热基板进行高温加热处理; 以及移动装置，其构造成在所述基板经受所述梯度预热处理时和/或之后将所述基板从所述温度梯度预热单元传送到所述高温加热单元。退火装置采用梯度加热方法对基板进行预热处理，从而提高退火效率。进一步提供使用退火装置的退火处理。

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