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81. 发明授权

US06639254B2 Epitaxial layer capable of exceeding critical thickness 有权
标题翻译：外延层能够超过临界厚度
公开(公告)号：US06639254B2
公开(公告)日：2003-10-28
申请号：US09756294
申请日：2001-01-09
申请人： Koki Mukai , Mitsuru Sugawara
发明人： Koki Mukai , Mitsuru Sugawara
IPC分类号： H01L310304
CPC分类号： H01L29/155 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02513 , H01L21/02546 , H01L21/0262 , H01L33/025 , H01L33/30 , H01S5/0206 , H01S5/18311 , H01S5/18341 , H01S5/18361 , H01S5/3201 , H01S2304/04
摘要： A substrate has a principal surface exposing a first semiconductor material. A micro structure is disposed on the principal surface of the substrate. The micro structure is made of a second semiconductor material having a lattice constant different from a lattice constant of the first semiconductor material, and defines a three-dimensionally irregular upper surface. A strained layer is disposed on the micro structure. The strained layer is made of a third semiconductor material having a lattice constant different from a lattice constant of the first semiconductor material. A semiconductor device is provided which has the structure allowing to form a high quality strained layer in terms of crystallography.
摘要翻译：衬底具有暴露第一半导体材料的主表面。微结构设置在基板的主表面上。微结构由具有与第一半导体材料的晶格常数不同的晶格常数的第二半导体材料制成，并且限定三维不规则的上表面。应变层设置在微结构上。应变层由具有与第一半导体材料的晶格常数不同的晶格常数的第三半导体材料制成。提供了一种半导体器件，其具有允许在晶体学方面形成高质量应变层的结构。

82. 发明授权

US06594294B1 Segmented-mirror VCSEL 有权
标题翻译：分段镜VCSEL
公开(公告)号：US06594294B1
公开(公告)日：2003-07-15
申请号：US09801282
申请日：2001-03-07
申请人： Jeff Tsao , Chan-Long Shieh , P. Daniel Dapkus , Jay Yang
发明人： Jeff Tsao , Chan-Long Shieh , P. Daniel Dapkus , Jay Yang
IPC分类号： H01S500
CPC分类号： H01S5/18341 , H01S5/0216 , H01S5/02461 , H01S5/18308 , H01S5/18361 , H01S5/18369 , H01S5/18375 , H01S5/18377 , H01S5/3095
摘要： A segmented-mirror vertical cavity surface emitting laser includes an active portion with an active region having at least one quantum well and a lateral dimension. A first mirror stack is positioned on a first opposed major surface of the active portion and extends laterally beyond the lateral dimension of the active region. A second mirror stack is positioned on the opposed major surface and extends laterally beyond the lateral dimension of the active region. The second mirror stack is segmented into two or more zones. In the case where there are two zones, in the first zone there would be a first reflectivity and a first thermal impedance, and in the second zone there would be a second reflectivity lower than the first reflectivity and a second thermal impedance lower than the first thermal impedance.
摘要翻译：分段镜垂直腔表面发射激光器包括具有至少一个量子阱和横向尺寸的有源区的有源部分。第一反射镜堆叠被定位在有源部分的第一相对的主表面上并且横向延伸超过有源区域的横向尺寸。第二反射镜叠层位于相对的主表面上并且横向延伸超过有源区域的横向尺寸。第二个镜像堆栈被分割成两个或更多个区域。在存在两个区域的情况下，在第一区域中将存在第一反射率和第一热阻抗，并且在第二区域中将存在比第一反射率低的第二反射率和低于第一反射率的第二热阻抗热阻抗。

83. 发明申请

US20030047744A1 Multilayered reflective membrane and gallium nitride-based light emitting element 有权
标题翻译：多层反射膜和氮化镓系发光元件
公开(公告)号：US20030047744A1
公开(公告)日：2003-03-13
申请号：US10189767
申请日：2002-07-08
发明人： Tomoya Yanamoto
IPC分类号： H01L033/00
CPC分类号： H01L33/105 , B82Y20/00 , H01L33/32 , H01S5/18308 , H01S5/18341 , H01S5/18361 , H01S5/18369 , H01S5/2009 , H01S5/34333 , H01S2301/173 , H01S2304/04
摘要： A gallium nitride-based multilayered reflective membrane with an excellent crystallinity while keeping a high reflectivity and a gallium nitride-based light emitting element using such a multilayered reflective are provided. The multilayered reflective membrane includes an AlaGa1nullaN layer (0
摘要翻译：提供了一种具有优异的结晶性同时保持高反射率的氮化镓基多层反射膜和使用这种多层反射的氮化镓基发光元件。多层反射膜包括具有（α1·lambd）/（4n1）厚度的AlGa1-aN层（0

84. 发明申请

US20020176470A1 Phase compensated distributed bragg reflector 审中-公开
标题翻译：相位补偿分布式布拉格反射器
公开(公告)号：US20020176470A1
公开(公告)日：2002-11-28
申请号：US10020068
申请日：2001-12-14
发明人： Kevin J. Knopp , Peidong Wang , Daryoosh Vakhshoori
IPC分类号： H01S005/00 , H01S003/091 , H01S003/092 , H01S003/08
CPC分类号： H01S5/18366 , G02B26/001 , G02B26/02 , H01S3/094084 , H01S5/041 , H01S5/0607 , H01S5/18308 , H01S5/18361 , H01S5/18388
摘要： In one form of the invention, there is provided a laser comprising a front mirror and a rear mirror being disposed so as to establish a reflective cavity therebetween; a gain region disposed between the front mirror and the rear mirror, the gain region being constructed so that when the gain region is appropriately stimulated by light from a pump laser, the gain region will emit light; and the rear mirror having a phase compensated reflector to act as an output coupler for a lasing mode and to reflect pump light at a proper phase so as to provide a second pumping pass through the gain region; wherein the gain region is positioned relative to the rear mirror so as to position the peaks of the reflected pump light in alignment with said gain region during the second pumping pass therethrough; and wherein the gain region is positioned relative to said front mirror and said rear mirror so as to provide proper lasing. In one preferred form of the invention, the gain region is formed by multiple quantum wells (MQW).
摘要翻译：在本发明的一种形式中，提供了一种激光器，其包括前镜和后反射镜，以在其间建立反射腔; 设置在所述前反射镜和所述后反射镜之间的增益区域，所述增益区域被构造成使得当所述增益区域被来自泵浦激光器的光适当地刺激时，所述增益区域将发光; 并且所述后视镜具有相位补偿反射器，用作用于激光模式的输出耦合器，并且将泵浦光反射到适当的相位，以便提供第二泵浦通过所述增益区域; 其中所述增益区域相对于所述后反射镜定位，以便在所述第二泵送通过期间使所述反射的泵浦光的峰值与所述增益区域对齐; 并且其中所述增益区域相对于所述前反射镜和所述后反射镜定位，以便提供适当的激光。在本发明的一个优选形式中，增益区由多个量子阱（MQW）形成。

85. 发明申请

US20020172237A1 Planar lightwave circuit for conditioning tunable laser output 有权
标题翻译：平面光波电路调节可调激光输出
公开(公告)号：US20020172237A1
公开(公告)日：2002-11-21
申请号：US10029018
申请日：2001-12-20
申请人： APPLIED OPTOELECTRONICS, INC.
发明人： Stefan J. Murry , Chih-Hsiang Lin , N. Stephan Kinsella
IPC分类号： H01S003/098 , H01S003/10
CPC分类号： G02B6/12007 , H01S5/0687 , H01S5/141 , H01S5/18361
摘要： A planar lightwave circuit (PLC) module for conditioning light output from a tunable laser designed to generate light at a target wavelength. The PLC module has a substrate; a primary waveguide embedded in said substrate, said primary waveguide having an input end for receiving light from the tunable laser and an output end for outputting said light; and at least a first secondary waveguide embedded in said substrate, said first secondary waveguide receiving a first portion of said light from the tunable laser. A filter having a passband centered on the target wavelength is coupled to an output of the first secondary waveguide to receive said first portion of light, and generates a signal related to the intensity of said first portion of light in the passband centered on the target wavelength. This may be used by a processor and associated laser control circuitry for wavelength locking purposes.
摘要翻译：一种平面光波电路（PLC）模块，用于调节设计成产生目标波长的光的可调激光器的光输出。 PLC模块具有基板; 嵌入在所述衬底中的初级波导，所述初级波导具有用于接收来自所述可调激光器的光的输入端和用于输出所述光的输出端; 以及至少一个嵌入在所述衬底中的第一次级波导，所述第一副波导接收来自所述可调激光器的所述光的第一部分。具有以目标波长为中心的通带的滤波器被耦合到第一次级波导的输出以接收所述第一部分光，并且产生与以目标波长为中心的通带中的所述第一部分光的强度相关的信号。这可以由处理器和相关联的激光控制电路用于波长锁定目的。

86. 发明申请

US20020159490A1 Tunable multi-frequency vertical cavity surface emitting laser 失效
标题翻译：可调多频垂直腔表面发射激光器
公开(公告)号：US20020159490A1
公开(公告)日：2002-10-31
申请号：US09820456
申请日：2001-03-29
发明人： Francis A. Karwacki
IPC分类号： H01S005/00
CPC分类号： H01S5/18341 , H01S5/0285 , H01S5/18302 , H01S5/18361 , H01S5/4087 , H01S5/423
摘要： A tunable Vertical Cavity Surface Emitting Laser (VCSEL) is disclosed that produces N frequencies of visible light. The VCSEL comprises an array of quantum wells (QWMs) which replaces one of the normally present Distributive Bragg Reflectors (DBR) at one end of a laser cavity of the VCSEL. These N independent QWMs produce N independent frequency in the laser cavity of the VCSEL device.
摘要翻译：公开了可调谐的垂直腔表面发射激光器（VCSEL），其产生可见光的N个频率。 VCSEL包括量子阱阵列（QWM），其在VCSEL的激光腔的一端替代正常存在的分布布拉格反射器（DBR）中的一个。这些N个独立的QWM在VCSEL器件的激光腔中产生N个独立的频率。

87. 发明授权

US06408015B1 Mirror adapted for use in semiconductor lasers and method for fabricating the same 失效
标题翻译：适用于半导体激光器的镜子及其制造方法
公开(公告)号：US06408015B1
公开(公告)日：2002-06-18
申请号：US09376764
申请日：1999-08-17
申请人： Yasuhisa Kaneko
发明人： Yasuhisa Kaneko
IPC分类号： H01S500
CPC分类号： H01S5/028 , H01S5/18361 , H01S5/32341 , H01S2304/04
摘要： A mirror for use in a semiconductor laser. The mirror consists a total of four or more alternating layers of a low refractive index semiconductor material having an index of refraction of n1 and a high refractive index semiconductor material having an index of refraction of n2 where n2>n1. A first one of the layers is grown at a temperature, referred to as the “low temperature”, such that the layer is in a substantially amorphous state, and a second one of the layers is grown at a temperature, referred to as the “high temperature”, such that the layer is in a substantially monocrystalline state. The first one of the layers and the second one of the layers correspond to layers having different indices of refraction. The thickness, TL, of the layer grown at the low temperature satisfies TL={&lgr;/(4×nL)}(2M−1) 0.2 &mgr;m where nH is the refractive index of the layer grown at the high temperature, and N is a positive integer. The first and second materials are preferably Group III-V nitrides such as AlxGal-xN, where x=0.3 to 1, and GaN.
摘要翻译：用于半导体激光器的镜子。反射镜包括总共具有折射率为n1的低折射率半导体材料的四个或更多个交替层，以及n2的折射率为n2的高折射率半导体材料，其中n2> n1。层中的第一层在被称为“低温”的温度下生长，使得该层处于基本非晶态，并且第二层被以称为“ 高温“，使得该层处于基本单晶状态。层中的第一层和第二层中的第二层对应于具有不同折射率的层。在低温下生长的层的厚度TL满足其中lambd是由激光发射的光的波长，nL是在低温下生长的层的折射率，M是正整数。在高温下生长的层的厚度TH满足其中nH是在高温下生长的层的折射率，N是正整数。第一和第二材料优选为III-V族氮化物，例如Al x Ga 1-x N，其中x = 0.3至1，以及GaN。

88. 发明申请

US20020021733A1 Multi-wavelength surface emitting laser and method for manufacturing the same 失效
标题翻译：多波长表面发射激光器及其制造方法
公开(公告)号：US20020021733A1
公开(公告)日：2002-02-21
申请号：US09835319
申请日：2001-04-17
发明人： Eun-Kyung Lee , Min-Hyung Chung
IPC分类号： H01S005/183
CPC分类号： H01S5/423 , H01S5/18308 , H01S5/18344 , H01S5/18361 , H01S5/2063 , H01S5/4087
摘要： A multi-wavelength surface emitting laser for emitting light having different wavelengths includes a lower reflector, an active layer and an upper reflector which are integrally formed above one substrate. The multi-wavelength surface emitting laser is manufactured by forming a first surface emitting laser, partially removing a first upper reflector, a first active layer, and a first lower reflection layer by etching. A protection film is formed on the outer surface of the first surface emitting laser. A second surface emitting laser is formed by removing a second lower reflector, a second active layer, and a second upper reflection layer formed on the protection film by etching. The protection film is removed and first and second upper electrodes are formed on upper surfaces of the first and second upper reflection layers, respectively, and a lower electrode is formed on a bottom surface of the substrate.
摘要翻译：用于发射具有不同波长的光的多波长表面发射激光器包括在一个基板上一体形成的下反射器，有源层和上反射器。通过形成第一表面发射激光器，通过蚀刻部分地去除第一上反射器，第一有源层和第一下反射层来制造多波长表面发射激光器。在第一表面发射激光器的外表面上形成保护膜。通过蚀刻除去形成在保护膜上的第二下反射器，第二有源层和第二上反射层，形成第二表面发射激光器。去除保护膜，分别在第一和第二上反射层的上表面上形成第一和第二上电极，并且在基板的底表面上形成下电极。

89. 发明授权

US06341138B1 Constant temperature performance laser 失效
标题翻译：恒温性能激光
公开(公告)号：US06341138B1
公开(公告)日：2002-01-22
申请号：US09334590
申请日：1999-06-16
申请人： Frank Peters , Michael H. MacDougal
发明人： Frank Peters , Michael H. MacDougal
IPC分类号： H01S308
CPC分类号： H01S5/18361 , H01S5/0284 , H01S5/1221 , H01S5/18369 , H01S5/18377
摘要： Diode lasers are fabricated whose performance is essentially unchanged over designed temperature and bias ranges. The threshold current (Ith) and the external efficiency (&eegr;ext) of the diode lasers are unchanged over a range of specified temperatures.
摘要翻译：制造二极管激光器，其性能在设计温度和偏置范围内基本不变。二极管激光器的阈值电流（Ith）和外部效率（etaext）在指定温度范围内不变。

90. 发明申请

US20020006143A1 SURFACE EMITTING LASER AND SURFACE EMITTING LASER ARRAY 有权
标题翻译：表面发射激光和表面发射激光阵列
公开(公告)号：US20020006143A1
公开(公告)日：2002-01-17
申请号：US09321711
申请日：1999-05-28
发明人： HIDEO NAKAYAMA , AKIRA SAKAMOTO , TAKESHI NAKAMURA , FUMIO KOYAMA
IPC分类号： H01S005/00
CPC分类号： H01S5/18361 , H01S5/18308 , H01S5/18311 , H01S5/18394 , H01S5/423 , H01S2301/163 , H01S2301/166
摘要： A surface emitting laser and a surface emitting laser array capable of high-luminance optical output in fundamental transverse mode, which can be produced easily with good reproducibility and with small position variation. The surface emitting laser has an active layer region composed of an active layer and upper and lower spacer layers deposited on both sides thereof and reflection layers deposited on both sides of the active layer region, an upper reflecting layer deposited on the upper spacer layer of the active layer region, a lower reflecting layer deposited on the lower spacer layer of the active layer region, and a secondary cavity formed by a first mode control layer and a second mode control layer placed on the periphery of the region of emission of the laser beam at the upper reflecting layer.
摘要翻译：表面发射激光器和表面发射激光器阵列，其能够以基本横向模式的高亮度光学输出，其可以容易地以良好的再现性和小的位置变化产生。表面发射激光器具有由活性层和沉积在其两侧上的上隔离层和下隔离层构成的有源层区域和沉积在有源层区域的两侧上的反射层，沉积在有源层区域的上间隔层上的上反射层有源层区域，沉积在有源层区域的下间隔层上的下反射层，以及由第一模式控制层和第二模式控制层形成的次级空腔，该第二模式控制层和第二模式控制层设置在激光束发射区域的周围在上反射层。

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