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    • 85. 发明授权
    • Organic EL display device and manufacturing method thereof
    • 有机EL显示装置及其制造方法
    • US08093612B2
    • 2012-01-10
    • US12574750
    • 2009-10-07
    • Masahiro Tanaka
    • Masahiro Tanaka
    • H01L33/00
    • H01L51/5281C23C14/048H01L51/0013
    • An organic EL display device forms an organic EL layer on a pixel portion by a transfer method without using a sophisticated optical system. A patterned light reflection layer is formed on a donor substrate. A light absorption layer is formed on the light reflection layer. An organic EL material layer is formed on the light absorption layer. An element substrate on which banks, lower electrodes and the like are formed is arranged to face a donor substrate in an opposed manner. When light is radiated to the donor substrate from a flash lamp or the like, only portions of the optical absorption layer where the light reflection layers are not formed are heated, and such portions of the organic EL material layer are evaporated and applied to a lower electrode formed on the element substrate. Due to such steps, the organic EL layer can be formed by a transfer method without using a sophisticated optical system.
    • 有机EL显示装置通过转印方法在像素部分上形成有机EL层,而不使用复杂的光学系统。 在施主衬底上形成图案化的光反射层。 在光反射层上形成光吸收层。 在光吸收层上形成有机EL材料层。 其上形成堤,下电极等的元件衬底被布置为以相对的方式面对施主衬底。 当光从闪光灯等照射到施主基板时,仅加热没有形成光反射层的光吸收层的部分,并且将有机EL材料层的这些部分蒸发并施加到较低的 形成在元件基板上的电极。 由于这样的步骤,可以通过转印方法形成有机EL层,而不使用复杂的光学系统。
    • 86. 发明申请
    • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    • 制造半导体器件的方法
    • US20110312125A1
    • 2011-12-22
    • US13220251
    • 2011-08-29
    • Akhiro Nomoto
    • Akhiro Nomoto
    • H01L51/40
    • H01L51/0013H01L51/0014H01L51/0026H01L51/0036H01L51/0043H01L51/0097H01L51/0541H01L51/0545
    • A method for manufacturing a semiconductor device is provided. The method includes the steps of: (1) coating a solution containing an organic semiconductor material on a water-repellent surface of a water-repellent stamp substrate; (2) drying the thus coated organic semiconductor material-containing solution on the water-repellent surface to crystallize the organic semiconductor material in contact with the water-repellent surface, thereby forming a semiconductor layer; (3) thermally treating the semiconductor layer formed on the stamp substrate; and (4) pressing the stamp substrate at a side, in which the thermally treated organic semiconductor layer is formed, against a surface of a substrate to be transferred so that the organic semiconductor layer is transferred to the surface of the substrate to be transferred.
    • 提供一种制造半导体器件的方法。 该方法包括以下步骤:(1)将包含有机半导体材料的溶液涂覆在防水印模基板的拒水表面上; (2)将这样涂布的含有机半导体材料的溶液干燥在防水表面上,使有机半导体材料与防水表面接触,从而形成半导体层; (3)对形成在印模基板上的半导体层进行热处理; 和(4)将形成有热处理的有机半导体层的一侧的印模基板压在要转印的基板的表面上,使得有机半导体层被转印到待转印的基板的表面上。
    • 89. 发明授权
    • Method for manufacturing light-emitting device
    • 发光装置的制造方法
    • US07993945B2
    • 2011-08-09
    • US12420183
    • 2009-04-08
    • Hisao IkedaTakahiro Ibe
    • Hisao IkedaTakahiro Ibe
    • H01L21/00H01L21/20
    • H01L51/0013C23C14/048H01L27/3211H01L27/3244H01L27/3281H01L51/56
    • An object is to provide a method for manufacturing a light-emitting device with high definition, high light-emitting characteristics, and the long lifetime by employing a method in which a desired evaporation pattern can be formed and an excess evaporation of a material layer which is to be the transfer layer is prevented and in which deterioration of the material or the like is hard to occur in a transfer step. This is a method for manufacturing a light-emitting device, in which irradiation with first light is performed to pattern a material layer over a first substrate which is an evaporation donor substrate and irradiation with second light is performed to evaporate the material layer patterned onto a second substrate which is a deposition target substrate.
    • 本发明的目的是提供一种用于制造具有高清晰度,高发光特性和长寿命的发光器件的方法,该方法采用其中可以形成所需的蒸发图案和材料层的过量蒸发的方法, 为了防止转印层,在转印步骤中难以发生材料劣化等。 这是一种用于制造发光器件的方法,其中进行第一光的照射以使材料层在作为蒸发供体衬底的第一衬底上成像,并且进行第二光的照射以将图案化的材料层蒸发到 作为沉积靶基板的第二基板。