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81. 发明申请

US20130269779A1 PHOTOELECTRIC CONVERSION DEVICE AND SOLAR CELL HAVING THE SAME 审中-公开
标题翻译：光电转换装置和具有该光电转换装置的太阳能电池
公开(公告)号：US20130269779A1
公开(公告)日：2013-10-17
申请号：US13912075
申请日：2013-06-06
申请人： FUJIFILM CORPORATION
发明人： Tetsuo KAWANO , Hiroshi KAGA
IPC分类号： H01L31/0328
CPC分类号： H01L31/0328 , H01L31/03923 , H01L31/0749 , Y02E10/541
摘要： The photoelectric conversion device of the present invention is a photoelectric conversion device which includes a substrate on which the following are layered in the order listed below: a lower electrode layer; a photoelectric conversion semiconductor layer which includes, as a major component, at least one kind of compound semiconductor having a chalcopyrite structure formed of a group Ib element, a group IIIb element, and a group VIb element; a buffer layer; and a transparent conductive layer, in which a carbonyl ion is provided on a surface of the buffer layer on the side of the transparent conductive layer and the buffer layer is a thin film layer having an average film thickness of 10 nm to 70 nm and includes a ternary compound of a cadmium-free metal, oxygen, and sulfur.
摘要翻译：本发明的光电转换装置是一种光电转换装置，其包括以下列顺序层叠以下的基板：下电极层; 作为主要成分的至少一种具有由Ib族元素，IIIb族元素和VIb族元素形成的黄铜矿结构的化合物半导体的光电转换半导体层，缓冲层; 以及透明导电层，其中在透明导电层一侧的缓冲层的表面上设置羰基离子，缓冲层是平均膜厚为10nm〜70nm的薄膜层，并且包括无镉金属，氧和硫的三元化合物。

82. 发明申请

US20130214271A1 P-Type Semiconductor Material and Semiconductor Device 有权
公开(公告)号：US20130214271A1
公开(公告)日：2013-08-22
申请号：US13768233
申请日：2013-02-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yoshinobu Asami , Riho Kataishi , Erumu Kikuchi
IPC分类号： H01L29/20
CPC分类号： H01L29/267 , H01L29/20 , H01L29/7869 , H01L29/861 , H01L31/0328 , H01L31/074 , Y02E10/50
摘要： An oxide semiconductor material having p-type conductivity and a semiconductor device using the oxide semiconductor material are provided. The oxide semiconductor material having p-type conductivity can be provided using a molybdenum oxide material containing molybdenum oxide (MoOy (2

83. 发明授权

US08456392B2 Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system 有权
标题翻译：制造发光，光伏或其他电子设备和系统的方法
公开(公告)号：US08456392B2
公开(公告)日：2013-06-04
申请号：US12560355
申请日：2009-09-15
申请人： William Johnstone Ray , Mark D. Lowenthal , Neil O. Shotton , Richard A. Blanchard , Mark Allan Lewandowski , Kirk A. Fuller , Donald Odell Frazier
发明人： William Johnstone Ray , Mark D. Lowenthal , Neil O. Shotton , Richard A. Blanchard , Mark Allan Lewandowski , Kirk A. Fuller , Donald Odell Frazier
IPC分类号： H01L21/30
CPC分类号： H01L33/00 , B82Y20/00 , B82Y30/00 , H01L21/30 , H01L27/142 , H01L27/156 , H01L27/32 , H01L27/3281 , H01L31/0232 , H01L31/028 , H01L31/0304 , H01L31/03044 , H01L31/0328 , H01L31/0352 , H01L31/035281 , H01L31/0475 , H01L31/05 , H01L31/0504 , H01L31/0508 , H01L31/0512 , H01L31/0543 , H01L31/0547 , H01L31/068 , H01L33/08 , H01L33/20 , H01L33/30 , H01L33/32 , H01L33/34 , H01L33/58 , H01L33/60 , H01L33/62 , H01L51/0096 , H01L51/447 , H01L51/52 , H01L51/5203 , H01L51/5265 , H01L51/5271 , H01L51/5275 , H01L51/56 , H01L2251/5369 , H01L2924/0002 , Y02E10/52 , Y02E10/547 , Y02E10/549 , Y02P70/521 , H01L2924/00
摘要： The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes forming at least one first conductor coupled to a base; coupling a plurality of substantially spherical substrate particles to the at least one first conductor; converting the substrate particles into a plurality of substantially spherical diodes; forming at least one second conductor coupled to the substantially spherical diodes; and depositing or attaching a plurality of substantially spherical lenses suspended in a first polymer. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. In various embodiments, the forming, coupling and converting steps are performed by or through a printing process.
摘要翻译：本发明提供一种制造电子设备的方法，例如具有发光二极管（LED）的照明装置或具有光伏二极管的发电装置。示例性方法包括形成耦合到基座的至少一个第一导体; 将多个基本上球形的基底颗粒耦合到所述至少一个第一导体; 将基板颗粒转变成多个基本上球形的二极管; 形成耦合到所述基本上球形的二极管的至少一个第二导体; 以及沉积或附着悬挂在第一聚合物中的多个基本上球形的透镜。透镜和悬浮聚合物具有不同的折射率。在一些实施例中，透镜和二极管具有在大约10:1和2:1之间的平均直径或长度的比率。在各种实施例中，成形，耦合和转换步骤通过印刷方法或通过印刷方法进行。

84. 发明申请

US20130118564A1 RARE EARTH SULFIDE THIN FILMS 审中-公开
标题翻译：稀土硫化物薄膜
公开(公告)号：US20130118564A1
公开(公告)日：2013-05-16
申请号：US13639731
申请日：2011-04-06
申请人： Chin Li Cheung , Joseph R. Brewer
发明人： Chin Li Cheung , Joseph R. Brewer
IPC分类号： H01L31/0328 , H01L31/18
CPC分类号： H01L31/0328 , H01L21/0237 , H01L21/02491 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L31/032 , H01L31/072 , H01L31/18 , H01L31/1828 , H01L51/4213 , Y02E10/50
摘要： An apparatus that includes a photovoltaic cell is provided. The photovoltaic cell includes a p-type thin film having a first rare earth sulfide, and an n-type thin film having a second rare earth sulfide. A p-n junction is formed between the p-type thin film and the n-type thin film. The photovoltaic cell includes a substrate and an at least partially transparent layer. The p-type and n-type thin films are deposited between the substrate and the at least partially transparent layer.
摘要翻译：提供了包括光伏电池的装置。光伏电池包括具有第一稀土硫化物的p型薄膜和具有第二稀土硫化物的n型薄膜。在p型薄膜和n型薄膜之间形成p-n结。光伏电池包括衬底和至少部分透明的层。 p型和n型薄膜沉积在衬底和至少部分透明的层之间。

85. 发明授权

US08384630B2 Light emitting, photovoltaic or other electronic apparatus and system 有权
标题翻译：发光，光伏或其他电子设备和系统
公开(公告)号：US08384630B2
公开(公告)日：2013-02-26
申请号：US12560340
申请日：2009-09-15
申请人： William Johnstone Ray , Mark D. Lowenthal , Neil O. Shotton , Richard A. Blanchard , Mark Allan Lewandowski , Kirk A. Fuller , Donald Odell Frazier
发明人： William Johnstone Ray , Mark D. Lowenthal , Neil O. Shotton , Richard A. Blanchard , Mark Allan Lewandowski , Kirk A. Fuller , Donald Odell Frazier
IPC分类号： H01L33/00
CPC分类号： H01L33/00 , B82Y20/00 , B82Y30/00 , H01L21/30 , H01L27/142 , H01L27/156 , H01L27/32 , H01L27/3281 , H01L31/0232 , H01L31/028 , H01L31/0304 , H01L31/03044 , H01L31/0328 , H01L31/0352 , H01L31/035281 , H01L31/0475 , H01L31/05 , H01L31/0504 , H01L31/0508 , H01L31/0512 , H01L31/0543 , H01L31/0547 , H01L31/068 , H01L33/08 , H01L33/20 , H01L33/30 , H01L33/32 , H01L33/34 , H01L33/58 , H01L33/60 , H01L33/62 , H01L51/0096 , H01L51/447 , H01L51/52 , H01L51/5203 , H01L51/5265 , H01L51/5271 , H01L51/5275 , H01L51/56 , H01L2251/5369 , H01L2924/0002 , Y02E10/52 , Y02E10/547 , Y02E10/549 , Y02P70/521 , H01L2924/00
摘要： The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.
摘要翻译：本发明提供了一种电子设备，例如包括发光二极管（LED）的发光装置或包括可通过印刷工艺产生的光伏二极管的发电装置，其使用半导体或其它基板颗粒墨水或悬浮液，使用透镜颗粒墨水或悬浮液。示例性装置包括基座; 至少一个第一导体; 耦合到所述至少一个第一导体的多个二极管; 耦合到所述多个二极管的至少一个第二导体; 以及悬挂在沉积或附着在二极管上的聚合物中的多个透镜。透镜和悬浮聚合物具有不同的折射率。在一些实施例中，透镜和二极管基本上是球形的，并且具有在大约10:1和2:1之间的平均直径或长度的比率。二极管可以是LED或光伏二极管，并且在一些实施例中，具有至少部分地形成为半球形壳或盖的结。

86. 发明申请

US20120097227A1 SOLAR CELLS 审中-公开
标题翻译：太阳能电池
公开(公告)号：US20120097227A1
公开(公告)日：2012-04-26
申请号：US13182850
申请日：2011-07-14
申请人： JungWook LIM , Seong Hyun Lee , Sun Jin Yun
发明人： JungWook LIM , Seong Hyun Lee , Sun Jin Yun
IPC分类号： H01L31/075
CPC分类号： H01L31/074 , H01L31/02168 , H01L31/0328 , H01L31/075 , Y02E10/548
摘要： Provided is a solar cell. The solar cell includes: a light absorbing layer; a window layer consisting of a p-type copper oxynitride layer on the light absorbing layer; a rear electrode below the light absorbing layer; and a transparent electrode on the window layer.
摘要翻译：提供一个太阳能电池。太阳能电池包括：光吸收层; 由光吸收层上的p型氧氮化铜层构成的窗口层; 在光吸收层下面的后电极; 和窗口层上的透明电极。

87. 发明授权

US08143630B2 Zinc sulfide substrates for group III-nitride epitaxy and group III-nitride devices 有权
标题翻译：用于III族氮化物外延和III族氮化物器件的硫化锌衬底
公开(公告)号：US08143630B2
公开(公告)日：2012-03-27
申请号：US12574092
申请日：2009-10-06
申请人： Shaoping Wang
发明人： Shaoping Wang
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L21/0254 , H01L21/02406 , H01L21/02458 , H01L21/02472 , H01L21/02474 , H01L21/0262 , H01L21/02636 , H01L21/02647 , H01L31/0328 , H01L33/007 , H01L33/12
摘要： A semiconductor structure includes a substrate which may be formed from a ZnS single crystal of wurtzite (2H) structure with a predetermined crystal orientation, and which has a first surface and a second surface. The structure includes a layer of a group III-nitride crystalline material deposited as an epitaxial layer on the first surface of the substrate. In one embodiment, the group III-nitride deposit is epitaxially grown using a MOCVD (or MOVPE) technique or a HVPE technique or a combination thereof. There may be a mask and/or a buffer layer on the first surface and/or a protective layer on the second surface.
摘要翻译：半导体结构包括可以由具有预定晶体取向的纤锌矿（2H）结构的ZnS单晶形成并具有第一表面和第二表面的衬底。该结构包括在衬底的第一表面上沉积为外延层的III族氮化物结晶材料层。在一个实施方案中，使用MOCVD（或MOVPE）技术或HVPE技术或其组合外延生长III族氮化物沉积物。在第一表面和/或第二表面上的保护层上可以存在掩模和/或缓冲层。

88. 发明授权

US08120060B2 Monolithically integrated silicon and III-V electronics 有权
标题翻译：单片集成硅和III-V电子元件
公开(公告)号：US08120060B2
公开(公告)日：2012-02-21
申请号：US11591383
申请日：2006-11-01
申请人： Eugene A. Fitzgerald
发明人： Eugene A. Fitzgerald
IPC分类号： H01L29/66
CPC分类号： H01L27/14601 , H01L21/0245 , H01L21/0251 , H01L21/76254 , H01L21/8258 , H01L27/0605 , H01L27/144 , H01L27/1446 , H01L27/14683 , H01L27/15 , H01L27/156 , H01L31/0328 , H01L31/143 , H01L31/162 , H01L2924/0002 , Y10S438/933 , H01L2924/00
摘要： Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon. The structure also includes an insulating layer disposed over the first monocrystalline semiconductor layer in a first region and a monocrystalline silicon layer disposed over the insulating layer in the first region. The structure includes at least one silicon-based electronic device comprising an element including at least a portion of the monocrystalline silicon layer. The structure includes a second monocrystalline semiconductor layer disposed over at least a portion of the first monocrystalline semiconductor layer in a second region and absent from the first region, wherein the second monocrystalline semiconductor layer has a lattice constant different from the lattice constant of relaxed silicon. The structure also includes at least one III-V electronic device comprising an element including at least a portion of the second monocrystalline semiconductor layer.
摘要翻译：提供了单晶硅和单晶非硅材料和器件单片集成的方法和结构。在一种结构中，单片集成半导体器件结构包括硅衬底和设置在硅衬底上的第一单晶半导体层，其中第一单晶半导体层具有与松弛硅的晶格常数不同的晶格常数。该结构还包括设置在第一区域中的第一单晶半导体层上的绝缘层和设置在第一区域中的绝缘层上的单晶硅层。该结构包括至少一个硅基电子器件，其包含至少部分单晶硅层的元件。该结构包括第二单晶半导体层，其设置在第二区域中的第一单晶半导体层的至少一部分上且不存在于第一区域中，其中第二单晶半导体层具有与松弛硅的晶格常数不同的晶格常数。该结构还包括至少一个III-V电子器件，其包括包含第二单晶半导体层的至少一部分的元件。

89. 发明申请

US20100119828A1 SPHERICAL ASSEMBLY PARTICLE COMPOSITION OF CUPROUS OXIDE AND PREPARATION METHOD THEREOF 有权
标题翻译：氧化丙烯的球形组装颗粒组合物及其制备方法
公开(公告)号：US20100119828A1
公开(公告)日：2010-05-13
申请号：US12452794
申请日：2008-06-25
申请人： Woo-Ram Lee , Sang-Ho Kim , Sung-Ho Yoon
发明人： Woo-Ram Lee , Sang-Ho Kim , Sung-Ho Yoon
IPC分类号： C01G3/02 , B32B5/00
CPC分类号： C01G3/02 , B01J23/72 , B01J35/0013 , B01J35/08 , B01J37/16 , B82Y30/00 , C01P2002/72 , C01P2004/03 , C01P2004/04 , C01P2004/32 , C01P2004/50 , C01P2004/52 , C01P2004/61 , C01P2004/62 , H01L31/0328 , H01L31/035281 , Y02E10/50 , Y10T428/2991 , Y10T428/2998
摘要： A Cu2O spherical assembly particle composition is composed of Cu2O spherical assembly particles, each of which is formed by agglomerating a plurality of Cu2O ultrafine particles that have an average diameter in the range from 1 to 100 nm and a standard deviation on the diameter in the range from 0 to 10%. The Cu2O spherical assembly particles have an average diameter in the range from 0.1 to 10 μm and a standard deviation on the diameter in the range from 0 to 40%. This Cu2O spherical assembly particle composition is composed of Cu2O assembly particles with excellent uniformity, so it shows excellent properties such as realizing a good electric conductivity during a curing process for wiring. Accordingly, the spherical Cu2O assembly particle composition may be usefully used as precursors for solar energy conversion, magnetic storage medium, catalyst, gas sensor, and copper wire formation.
摘要翻译： Cu2O球形组件颗粒组合物由Cu2O球形组件颗粒组成，每个颗粒通过使平均直径在1至100nm范围内的多个Cu 2 O超细颗粒聚集而形成，并且在该范围内的直径的标准偏差从0到10％。 Cu2O球形组件颗粒的平均直径在0.1至10μm的范围内，直径的标准偏差在0至40％的范围内。该Cu 2 O球形组合物颗粒组合物由均匀性良好的Cu 2 O组合颗粒组成，因此在布线固化过程中实现良好的导电性。因此，球形Cu 2 O组合粒子组合物可以有用地用作太阳能转换，磁存储介质，催化剂，气体传感器和铜线形成的前体。

90. 发明授权

US07705370B2 Monolithically integrated photodetectors 有权
标题翻译：单片式光电探测器
公开(公告)号：US07705370B2
公开(公告)日：2010-04-27
申请号：US11591658
申请日：2006-11-01
申请人： Eugene A. Fitzgerald
发明人： Eugene A. Fitzgerald
IPC分类号： H01L31/0328
CPC分类号： H01L27/14601 , H01L21/0245 , H01L21/0251 , H01L21/76254 , H01L21/8258 , H01L27/0605 , H01L27/144 , H01L27/1446 , H01L27/14683 , H01L27/15 , H01L27/156 , H01L31/0328 , H01L31/143 , H01L31/162 , H01L2924/0002 , Y10S438/933 , H01L2924/00
摘要： Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon. The structure further includes an insulating layer disposed over the first monocrystalline semiconductor layer in a first region and a monocrystalline silicon layer disposed over the insulating layer in the first region. The structure includes at least one silicon-based photodetector comprising an active region including at least a portion of the monocrystalline silicon layer. The structure also includes a second monocrystalline semiconductor layer disposed over at least a portion of the first monocrystalline semiconductor layer in a second region and absent from the first region, wherein the second monocrystalline semiconductor layer has a lattice constant different from the lattice constant of relaxed silicon. The structure includes at least one non-silicon photodetector comprising an active region including at least a portion of the second monocrystalline semiconductor layer.
摘要翻译：提供了单晶硅和单晶非硅材料和器件单片集成的方法和结构。在一种结构中，单片集成半导体器件结构包括硅衬底和设置在硅衬底上的第一单晶半导体层，其中第一单晶半导体层具有与松弛硅的晶格常数不同的晶格常数。该结构还包括设置在第一区域中的第一单晶半导体层上的绝缘层和设置在第一区域中的绝缘层上的单晶硅层。该结构包括至少一个硅基光电检测器，其包括至少部分单晶硅层的有源区。该结构还包括第二单晶半导体层，其设置在第二区域中的第一单晶半导体层的至少一部分上且不存在于第一区域中，其中第二单晶半导体层具有与松弛硅的晶格常数不同的晶格常数。该结构包括至少一个非硅光电检测器，其包括包括第二单晶半导体层的至少一部分的有源区。

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