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81. 发明公开

US20230266662A1 VACUUM-INTEGRATED HARDMASK PROCESSES AND APPARATUS 审中-公开
公开(公告)号：US20230266662A1
公开(公告)日：2023-08-24
申请号：US18298003
申请日：2023-04-10
申请人： Lam Research Corporation
发明人： Jeffrey MARKS , George Andrew ANTONELLI , Richard A. GOTTSCHO , Dennis M. HAUSMANN , Adrien LAVOIE , Thomas Joseph KNISLEY , Sirish K. REDDY , Bhadri N. VARADARAJAN , Artur KOLICS
IPC分类号： G03F1/76 , C23C18/16 , C23C18/18 , G03F7/004 , G03F7/16 , H01L21/033 , H01L21/3213 , C23C14/56 , G03F7/00 , G03F7/26 , G03F7/36 , H01L21/67 , C23C16/44 , C23C18/14
CPC分类号： G03F1/76 , C23C18/1612 , C23C18/182 , C23C18/165 , G03F7/0043 , G03F7/16 , G03F7/167 , H01L21/0332 , H01L21/0337 , H01L21/3213 , C23C14/56 , G03F7/70808 , G03F7/26 , G03F7/36 , H01L21/67167 , H01L21/67213 , C23C16/44 , C23C18/143 , C23C18/145 , H01L21/67161
摘要： Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

82. 发明公开

US20230160055A1 YTTRIUM OXIDE BASED COATING COMPOSITION 审中-公开
公开(公告)号：US20230160055A1
公开(公告)日：2023-05-25
申请号：US18089807
申请日：2022-12-28
申请人： APPLIED MATERIALS, INC.
发明人： Vahid Firouzdor , Christopher Laurent Beaudry , Hyun-Ho Doh , Joseph Frederick Behnke , Joseph Frederick Sommers
IPC分类号： C23C14/08 , H01J37/32 , C23C4/134 , C23C14/00 , H01L21/67 , C23C14/22 , C04B35/486 , C04B35/505 , C04B35/622 , C04B35/111
CPC分类号： C23C14/083 , H01J37/32495 , C23C4/134 , C23C14/0052 , H01L21/67213 , C23C14/221 , C04B35/486 , C04B35/505 , C04B35/62222 , C23C14/081 , C04B35/111
摘要： Described herein is a protective coating composition that provides erosion and corrosion resistance to a coated article (such as a chamber component) upon the article's exposure to harsh chemical environment (such as hydrogen based and/or halogen based environment) and/or upon the article's exposure to high energy plasma. Also described herein is a method of coating an article with the protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits, on average, less than about 5 yttrium based particle defects per wafer.

83. 发明授权

US10872760B2 Cluster tool and manufacuturing method of semiconductor structure using the same 有权
公开(公告)号：US10872760B2
公开(公告)日：2020-12-22
申请号：US15219512
申请日：2016-07-26
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Han-Wen Liao
IPC分类号： H01L21/02 , H01L29/66 , H01L21/67 , H01J37/317 , H01L21/306 , H01L21/3065 , H01J37/32 , H01L29/78
CPC分类号： H01L21/02071 , H01J37/317 , H01J37/32899 , H01L21/02057 , H01L21/02068 , H01L21/3065 , H01L21/30604 , H01L21/67196 , H01L21/67201 , H01L21/67213 , H01L29/66545 , H01L29/78 , H01J2237/317
摘要： A cluster tool includes a polyhedral transfer chamber, at least one processing chamber, at least one load lock chamber, and an electron beam (e-beam) source. The processing chamber is connected to the polyhedral transfer chamber. The processing chamber is configured to perform a manufacturing procedure to a wafer present therein. The load lock chamber is connected to the polyhedral transfer chamber. The e-beam source is configured to performing an e-beam treatment to the wafer after the wafer is performed the manufacturing procedure.

84. 发明申请

US20190198372A1 SYSTEM FOR DYNAMICALLY COMPENSATING POSITION ERRORS OF A SAMPLE 审中-公开
公开(公告)号：US20190198372A1
公开(公告)日：2019-06-27
申请号：US16329666
申请日：2017-08-26
申请人： ASML Netherlands B.V.
发明人： Fangfu LI
IPC分类号： H01L21/68 , H01L21/67 , H01J37/18 , H01J37/22
CPC分类号： H01L21/681 , H01J37/185 , H01J37/226 , H01J2237/20285 , H01J2237/20292 , H01J2237/204 , H01L21/67213
摘要： Systems and methods are provided for dynamically compensating position errors of a sample. The system can comprise one or more sensing units configured to generate a signal based on a position of a sample and a controller. The controller can be configured to determine the position of the sample based on the signal and in response to the determined position, provide information associated with the determined position for control of one of a first handling unit in a first chamber, a second handling unit in a second chamber, and a beam location unit in the second chamber.

85. 发明申请

US20190189479A1 Processing of Semiconductors Using Vaporized Solvents 审中-公开
公开(公告)号：US20190189479A1
公开(公告)日：2019-06-20
申请号：US16208003
申请日：2018-12-03
申请人： Mattson Technology, Inc.
发明人： Shuang Meng , Shawming Ma , Michael X. Yang
IPC分类号： H01L21/67 , H01J37/32
CPC分类号： H01L21/67213 , H01J37/32357 , H01J37/32449 , H01L21/67023
摘要： Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece into a process chamber; vaporizing a solvent to create a vaporized solvent; introducing the vaporized solvent into the process chamber; and exposing the workpiece to the vaporized solvent.

86. 发明申请

US20180342413A1 FIXED POSITION MASK FOR WORKPIECE EDGE TREATMENT 审中-公开
公开(公告)号：US20180342413A1
公开(公告)日：2018-11-29
申请号：US15605106
申请日：2017-05-25
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Fletcher Ian Potter , Philip Layne , Keith A. Fernlund , Michael Swears , Richard Allen Sprenkle
IPC分类号： H01L21/68 , H01L21/687 , H01L21/67 , H01L21/02 , H01L21/48
CPC分类号： H01L21/68764 , H01L21/02021 , H01L21/26506 , H01L21/4871 , H01L21/67213 , H01L21/682 , H01L21/68721 , H01L21/68735
摘要： Embodiments of the disclosure include a fixed position mask for workpiece edge treatment. In some embodiments, an apparatus includes a roplat having a rotatable assembly, and a platen coupled to the rotatable assembly, wherein the platen is configured to hold a workpiece. The apparatus further includes a bracket affixed to the rotatable assembly, and a mask directly coupled to the bracket, wherein the mask is positioned adjacent the workpiece. The mask covers an inner portion of the platen and the workpiece, leaving just an outer circumferential edge of the workpiece exposed to an ion treatment. In some embodiments, the platen is permitted to rotate relative to the bracket during an ion treatment. In some embodiments, the mask includes a solid plate section devoid of any openings, and a mounting portion extending from the plate section, wherein the mounting portion is directly coupled to an extension arm of the bracket.

87. 发明申请

US20180261458A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND VACUUM PROCESSING APPARATUS 审中-公开
公开(公告)号：US20180261458A1
公开(公告)日：2018-09-13
申请号：US15910463
申请日：2018-03-02
申请人： TOKYO ELECTRON LIMITED
发明人： Tatsuya YAMAGUCHI , Reiji NIINO , Hiroyuki HASHIMOTO , Syuji NOZAWA , Makoto FUJIKAWA
IPC分类号： H01L21/033 , H01L21/027 , H01L21/265 , H01L21/02 , H01L21/67 , H01L21/677
CPC分类号： H01L21/0337 , H01J37/00 , H01L21/02057 , H01L21/0271 , H01L21/033 , H01L21/0332 , H01L21/26513 , H01L21/266 , H01L21/67034 , H01L21/67063 , H01L21/6715 , H01L21/6719 , H01L21/67213 , H01L21/67703 , H01L29/785
摘要： There is provided a semiconductor device manufacturing method including: forming a first mask film composed of a polymer having a urea bond by supplying a raw material to a surface of the substrate for polymerization; forming a second mask inorganic film to be laminated on the first mask film; forming a pattern on the first mask film and the second mask inorganic film and performing an ion implantation on the surface of the substrate; removing the second mask inorganic film after the ion implantation; and removing the first mask film by heating the substrate after the ion implantation and depolymerizing the polymer.

88. 发明申请

US20170287752A1 INTEGRATED METROLOGY AND PROCESS TOOL TO ENABLE LOCAL STRESS/OVERLAY CORRECTION 审中-公开
公开(公告)号：US20170287752A1
公开(公告)日：2017-10-05
申请号：US15445303
申请日：2017-02-28
申请人： Applied Materials, Inc.
发明人： Ludovic GODET , Mehdi VAEZ-IRAVANI , Todd EGAN , Mangesh BANGAR , Concetta RICCOBENE , Abdul Aziz KHAJA , Srinivas D. NEMANI , Ellie Y. YIEH , Sean S. KANG
IPC分类号： H01L21/67 , H01L21/265 , H01L21/66
CPC分类号： H01L21/67259 , H01L21/265 , H01L21/67167 , H01L21/67196 , H01L21/67201 , H01L21/67207 , H01L21/67213 , H01L21/67288 , H01L22/20
摘要： Embodiments of the disclosure provide an integrated system for performing a measurement process and a lithographic overlay error correction process on a semiconductor substrate in a single processing system. In one embodiment, a processing system includes at least a load lock chamber, a transfer chamber coupled to the load lock chamber, an ion implantation processing chamber coupled to or in the transfer chamber, and a metrology tool coupled to the transfer chamber, wherein the metrology tool is adapted to obtain stress profile or an overlay error on a substrate disposed in the metrology tool.

89. 发明申请

US20170178933A1 HIGH THROUGHPUT SERIAL WAFER HANDLING END STATION 审中-公开
公开(公告)号：US20170178933A1
公开(公告)日：2017-06-22
申请号：US15391086
申请日：2016-12-27
申请人： Axcelis Technologies, Inc.
发明人： Joseph Ferrara , Robert J. Mitchell
IPC分类号： H01L21/67 , C23C14/48 , H01L21/677
CPC分类号： H01L21/67213 , C23C14/48 , H01L21/67201 , H01L21/67265 , H01L21/67745
摘要： An ion implantation apparatus, system, and method are provided for transferring a plurality of workpieces between vacuum and atmospheric pressures, wherein an alignment mechanism is operable to align a plurality of workpieces for generally simultaneous transportation to a dual-workpiece load lock chamber. The alignment mechanism comprises a characterization device, an elevator, and two vertically-aligned workpiece supports for supporting two workpieces. First and second atmospheric robots are configured to generally simultaneously transfer two workpieces at a time between load lock modules, the alignment mechanism, and a FOUP. Third and fourth vacuum robots are configured to transfer one workpiece at a time between the load lock modules and a process module.

90. 发明申请

US20170040141A1 HIGH THROUGHPUT COOLED ION IMPLANTATION SYSTEM AND METHOD 有权
标题翻译：高通量冷却离子植入系统和方法
公开(公告)号：US20170040141A1
公开(公告)日：2017-02-09
申请号：US14817893
申请日：2015-08-04
申请人： Axcelis Technologies, Inc.
发明人： Armin Huseinovic , Joseph Ferrara , Brian Terry
IPC分类号： H01J37/20 , H01J37/18 , H01L21/683 , H01J37/317
CPC分类号： H01J37/20 , H01J37/185 , H01J37/3171 , H01J2237/184 , H01J2237/2001 , H01J2237/31705 , H01L21/26593 , H01L21/67109 , H01L21/67213 , H01L21/6831
摘要： An ion implantation system has a process chamber having a process environment, and an ion implantation apparatus configured to implant ions into a workpiece supported by a chuck within the process chamber. A load lock chamber isolates the process (vacuum) environment from an atmospheric environment, wherein a load lock workpiece support supports the workpiece therein. An isolation chamber is coupled to the process chamber with a pre-implant cooling environment defined therein. An isolation gate valve selectively isolates the pre-implant cooling environment from the process environment wherein the isolation chamber comprises a pre-implant cooling workpiece support for supporting and cooling the workpiece. The isolation gate valve is the only access path for the workpiece to enter and exit the isolation chamber. A pressurized gas selectively pressurizes the pre-implant cooling environment to a pre-implant cooling pressure that is greater than the process pressure for expeditious cooling of the workpiece. A workpiece transfer arm transfer the workpiece between the load lock chamber, isolation chamber, and chuck. A controller controls the workpiece transfer arm selectively cools the workpiece to a pre-implant cooling temperature in the isolation chamber at the pre-implant cooling pressure via a control of the isolation gate valve, pre-implant cooling workpiece support, and pressurized gas source.
摘要翻译：离子注入系统具有处理室，其具有工艺环境，以及离子注入装置，被配置为将离子注入到由处理室内的卡盘支撑的工件中。加载锁定室将工艺（真空）环境与大气环境隔离，其中负载锁定工件支撑件支撑其中的工件。隔离室通过在其中限定的植入前冷却环境耦合到处理室。隔离闸阀选择性地将植入前冷却环境与过程环境隔离，其中隔离室包括用于支撑和冷却工件的植入物前冷却工件支撑件。隔离闸阀是工件进出隔离室的唯一进入路径。加压气体选择性地将植入物前冷却环境加压到大于工艺压力的植入前冷却压力，以便于快速冷却工件。工件传送臂在加载锁定室，隔离室和卡盘之间传送工件。控制器控制工件传送臂通过隔离闸阀，预植入物冷却工件支撑件和加压气体源的控制，以预植入物冷却压力选择性地将工件冷却至隔离室中的植入前冷却温度。

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