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    • 85. 发明授权
    • Plasma uniformity control using biased array
    • 使用偏置阵列的等离子体均匀性控制
    • US08834732B2
    • 2014-09-16
    • US13662018
    • 2012-10-26
    • Varian Semiconductor Equipment Associates, Inc.
    • Bon-Woong Koo
    • C03C15/00H01J37/32C23C14/48G21K5/02
    • C23C14/48G21K5/02H01J37/32412H01J37/32623H01J37/32706
    • A technique for processing a workpiece is disclosed. In accordance with one exemplary embodiment, the technique is realized as a method for processing a substrate, where the method comprises: providing the workpiece in the chamber; providing a plurality of electrodes between a wall of the chamber and the workpiece; generating a plasma containing ions between the plurality of electrodes and the workpiece, ion density in an inner portion of the plasma being greater than the ion density in an outer portion of the plasma portion, the outer portion being between the inner portion and the wall of the chamber; and providing a bias voltage to the plurality of electrodes and dispersing at least a portion of the ions in the inner portion until the ion density in the inner portion is substantially equal to the ion density in the periphery plasma portion.
    • 公开了一种用于加工工件的技术。 根据一个示例性实施例,该技术被实现为用于处理衬底的方法,其中该方法包括:在腔室中提供工件; 在所述室的壁和所述工件之间提供多个电极; 在所述多个电极和所述工件之间产生含有离子的等离子体,所述等离子体的内部部分中的离子密度大于所述等离子体部分的外部部分中的离子密度,所述外部部分位于所述等离子体部分的内部和壁之间 房间 以及向所述多个电极提供偏置电压并将所述离子的至少一部分分散在所述内部部分中,直到所述内部部分中的离子密度基本上等于所述周边等离子体部分中的离子密度。
    • 86. 发明授权
    • Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
    • 使用线型光束的衬底上的膜区域的激光结晶处理的工艺和系统,以及这些膜区域的结构
    • US08796159B2
    • 2014-08-05
    • US11373772
    • 2006-03-09
    • James S. ImPaul Christiaan van der Wilt
    • James S. ImPaul Christiaan van der Wilt
    • H01L21/00
    • H01L21/02686C30B13/24C30B35/00G21K5/02G21K5/10H01L21/02678H01L21/2026H01L27/1285H01L27/1296H01L29/04
    • Process and system for processing a thin film sample, as well as at least one portion of the thin film structure are provided. Irradiation beam pulses can be shaped to define at least one line-type beam pulse, which includes a leading portion, a top portion and a trailing portion, in which at least one part has an intensity sufficient to at least partially melt a film sample. Irradiating a first portion of the film sample to at least partially melt the first portion, and allowing the first portion to resolidify and crystallize to form an approximately uniform area therein. After the irradiation of the first portion of the film sample, irradiating a second portion using a second one of the line-type beam pulses to at least partially melt the second portion, and allowing the second portion to resolidify and crystallize to form an approximately uniform area therein. A section of the first portion impacted by the top portion of the first one of the line-type beam pulses is prevented from being irradiated by trailing portion of the second one of the line-type beam pulses.
    • 提供了用于处理薄膜样品的方法和系统,以及薄膜结构的至少一部分。 辐射束脉冲可以被成形为限定至少一个线型束脉冲,其包括前导部分,顶部部分和尾部部分,其中至少一个部分具有足以至少部分地熔化膜样品的强度。 辐射薄膜样品的第一部分以至少部分地熔化第一部分,并允许第一部分重新凝固并结晶以在其中形成大致均匀的区域。 在照射第一部分薄膜样品之后,使用第二种线型束脉冲照射第二部分以至少部分地熔化第二部分,并允许第二部分重新凝固并结晶以形成近似均匀的 区域。 由第一线路型光束脉冲的顶部部分影响的第一部分的一部分被第二线路型光束脉冲的后部部分照射。
    • 87. 发明申请
    • CHARGED PARTICLE BEAM IRRADIATION DEVICE
    • 充电颗粒光束辐射装置
    • US20140158915A1
    • 2014-06-12
    • US14134657
    • 2013-12-19
    • Sumitomo Heavy Industries, Ltd.
    • Tsuyoshi Ogasawara
    • G21K5/02
    • G21K5/02A61N5/1042A61N5/1077A61N2005/1087A61N2005/1095G21K5/04
    • A charged particle beam irradiation device includes an accelerator that accelerates charged particles and emits a charged particle beam; an irradiation unit that irradiates a body with the charged particle beam; a duct that transports the charged particle beam to the irradiation unit; a tubular body arranged on a propagation path of the charged particle beam within the irradiation unit, has inert gas filled thereinto, and has particle beam transmission films transmitting the charged particle beam therethrough at an inlet and an outlet thereof; a gas supply unit that supplies the inert gas into the tubular body; and a leak valve that leaks the inert gas inside the tubular body to the outside when the internal pressure of the tubular body is equal to or higher than a set pressure. The gas supply unit has a plurality of supply lines having different amounts of supply of inert gas.
    • 带电粒子束照射装置包括加速带电粒子并发射带电粒子束的加速器; 照射单元,其向所述体内照射所述带电粒子束; 将带电粒子束传送到照射单元的管道; 布置在照射单元内的带电粒子束的传播路径上的管体具有填充惰性气体,并且在其入口和出口处具有透射带电粒子束的粒子束透射膜; 气体供应单元,其将惰性气体供应到管状体中; 以及当管状体的内部压力等于或高于设定压力时,将管状体内的惰性气体向外部泄漏的泄漏阀。 气体供给单元具有多个不同供给惰性气体的供给管线。
    • 89. 发明授权
    • Electron beam sterilizer
    • 电子束灭菌器
    • US08618503B2
    • 2013-12-31
    • US12451535
    • 2008-05-20
    • Yukinobu NishinoTokuo NishiYukihiro Yamamoto
    • Yukinobu NishinoTokuo NishiYukihiro Yamamoto
    • A61L2/08G21K5/02
    • A61L2/087A61L2202/23B65B55/08G21K5/02G21K5/10
    • An electron beam sterilizer has a bottle holder 28 provided with a rotation shaft 38, a neck gripper 70 mounted to a lower end of the rotation shaft 38, a rotating body 30 for rotating and moving the neck gripper 70 and a rotator revolver (segment gear 54, pinion gear 46, disc-shaped cam 66, etc.), and while conveying the resin bottle 2 in the state of being held, the resin bottle 2 is sterilized by irradiation with the electron beam through the irradiation window 19 of the electron beam irradiation device 18. The entire surface of the resin bottle 2 is completely sterilized by being rotated by the rotator during the movement in front of the irradiation window 19 and, thereafter, the rotator is inverted in position to return the neck gripper to thereby discharge the bottle.
    • 电子束灭菌器具有设置有旋转轴38的瓶保持器28,安装在旋转轴38的下端的颈部夹持器70,用于使颈部夹持器70旋转和移动的旋转体30和旋转轮(分段齿轮 54,小齿轮46,圆盘状凸轮66等),并且在保持树脂瓶2的状态下输送树脂瓶2时,通过电子束的照射通过电子的照射窗19对树脂瓶2进行灭菌 光束照射装置18.树脂瓶2的整个表面通过旋转器在照射窗口19的前方移动期间被旋转而完全消毒,此后,旋转体在其位置反转以使颈部夹持器返回从而排出 瓶子。
    • 90. 发明授权
    • Shielded capacitive electrode
    • 屏蔽电容电极
    • US08481961B2
    • 2013-07-09
    • US12368541
    • 2009-02-10
    • Michel Kireeff Covo
    • Michel Kireeff Covo
    • G21K5/00
    • H01J27/02G01R19/0061G21K5/02H05H1/0081
    • A device is described, which is sensitive to electric fields, but is insensitive to stray electrons/ions and unlike a bare, exposed conductor, it measures capacitively coupled current while rejecting currents due to charged particle collected or emitted. A charged particle beam establishes an electric field inside the beam pipe. A grounded metallic box with an aperture is placed in a drift region near the beam tube radius. The produced electric field that crosses the aperture generates a fringe field that terminates in the back surface of the front of the box and induces an image charge. An electrode is placed inside the grounded box and near the aperture, where the fringe fields terminate, in order to couple with the beam. The electrode is negatively biased to suppress collection of electrons and is protected behind the front of the box, so the beam halo cannot directly hit the electrode and produce electrons. The measured signal shows the net potential (positive ion beam plus negative electrons) variation with time, as it shall be observed from the beam pipe wall.
    • 描述了对电场敏感但对杂散电子/离子不敏感的器件,与裸露的导体不同,它测量电容耦合电流,同时由于收集或发射的带电粒子而导致的电流被抑制。 带电粒子束在射束管内形成电场。 具有孔径的接地金属盒放置在射束管半径附近的漂移区域中。 产生的穿过孔的电场产生一个边缘区域,其终止于箱体前部的后表面并引起图像充电。 电极放置在接地箱内部和靠近孔口处,边缘区域终止,以便与梁耦合。 电极被负偏压以抑制电子的收集并且被保护在盒的前部之后,因此光束晕不能直接击中电极并产生电子。 测量的信号显示净电位(正离子束加负电子)随时间的变化,从梁管壁观察。