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81. 发明申请

US20150287792A1 III-Nitride Based Semiconductor Structure 有权
标题翻译：基于III-Nitride的半导体结构
公开(公告)号：US20150287792A1
公开(公告)日：2015-10-08
申请号：US14743218
申请日：2015-06-18
申请人： International Rectifier Corporation
发明人： T. Warren Weeks, JR. , Edwin L. Piner , Thomas Gehrke , Kevin J. Linthicum
IPC分类号： H01L29/20 , H01L29/205 , H01L29/778 , H01L33/12 , H01L33/06 , H01L33/32 , H01L29/201 , H01L29/15
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
摘要翻译：本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。过渡层由氮化镓材料与衬底之间的热膨胀速率差异导致的氮化镓材料层中的应力成分梯度降低。氮化镓材料层中的应力降低降低了形成裂纹的倾向。因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。半导体材料可以用于许多微电子和光学应用中。

82. 发明申请

US20150279658A1 METHOD OF GROWING NITRIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：生长氮化物半导体器件的方法
公开(公告)号：US20150279658A1
公开(公告)日：2015-10-01
申请号：US14667435
申请日：2015-03-24
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Keiichi YUI , Ken Nakata , Isao Makabe , Tsuyoshi KOUCHI
IPC分类号： H01L21/02 , C30B29/40 , C30B25/16 , H01L29/20 , H01L29/205
CPC分类号： H01L21/0262 , C30B25/165 , C30B29/403 , C30B29/406 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L29/2003 , H01L29/7783 , H01L29/7787
摘要： A method to produce a nitride semiconductor device is disclosed, The method includes a step to grow sequentially, on a substrate, an AlN layer, a AlGaN layer with the Al composition not less than 2.5% but not greater than 9%, a GaN layer with a thickness not less than 250 nm but not greater than 1400 nm. A feature of the process is that, after the growth of the AlGaN layer but before the growth of the GaN layer, at least the source gases for the group III elements are interrupted to be supplied for a period of not less than 80 seconds but not longer than 220 seconds.
摘要翻译：公开了一种制造氮化物半导体器件的方法。该方法包括在衬底上AlN层，Al组成不超过2.5％但不大于9％的AlGaN层依次生长的步骤，GaN层厚度不小于250nm但不大于1400nm。该方法的特征在于，在AlGaN层生长之后但是在GaN层生长之前，至少III族元素的源气体被中断以供给不少于80秒但不是超过220秒。

83. 发明授权

US09133564B2 Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other 有权
标题翻译： III族氮化物晶体在具有至少两个表面的种子上的等温生长彼此形成锐角，右或钝角
公开(公告)号：US09133564B2
公开(公告)日：2015-09-15
申请号：US13283862
申请日：2011-10-28
申请人： Siddha Pimputkar , James S. Speck , Shuji Nakamura , Shin-Ichiro Kawabata
发明人： Siddha Pimputkar , James S. Speck , Shuji Nakamura , Shin-Ichiro Kawabata
IPC分类号： C30B7/10 , C30B29/40
CPC分类号： C30B7/105 , C30B29/403 , Y10T428/24479
摘要： An ammonothermal growth of group-III nitride crystals on starting seed crystals with at least two surfaces making an acute, right or obtuse angle, i.e., greater than 0 degrees and less than 180 degrees, with respect to each other, such that the exposed surfaces together form a concave surface.
摘要翻译： III族氮化物晶体在具有至少两个表面的起始晶种上相对于彼此形成锐角，右或钝角，即大于0度且小于180度的氨热生长，使得暴露表面一起形成凹面。

84. 发明授权

US09105472B2 Single-crystal substrate,single-crystal substrate having crystalline film,crystalline film,method for producing single-crystal substrate having crystalline film,method for producing crystalline substrate,and method for producing element 有权
标题翻译：单晶基板，具有结晶膜的单晶基板，结晶膜，具有结晶膜的单晶基板的制造方法，晶体基板的制造方法及其制造方法
公开(公告)号：US09105472B2
公开(公告)日：2015-08-11
申请号：US13639143
申请日：2011-04-06
申请人： Hideo Aida , Natsuko Aota
发明人： Hideo Aida , Natsuko Aota
IPC分类号： B32B3/00 , H01L21/02 , C30B25/18 , C30B29/40
CPC分类号： H01L21/0254 , C30B25/18 , C30B29/403 , H01L21/0242 , H01L21/0243 , H01L21/02658 , Y10T428/21 , Y10T428/24355
摘要： Provided are a single-crystal substrate for epitaxial growth on which a crystalline film may be formed with stress thereon being suppressed or eliminated, a single-crystal substrate having a crystalline film, a crystalline film, a method of producing a single-crystal substrate having a crystalline film, a method of producing a crystalline substrate, and an element producing method. The single-crystal substrate has a roughened surface formed on at least a partial region of a surface of the single-crystal substrate. And in order to obtain the single-crystal substrate having a crystalline film, a single-crystalline film is formed by epitaxial growth on a roughened-surface unformed surface on which the roughened surface is not formed, and a crystalline film having low crystallinity than the single-crystalline film is formed by epitaxial growth on a roughened-surface formed surface of the single-crystal substrate.
摘要翻译：提供一种用于外延生长的单晶衬底，其上可以形成具有抑制或消除其应力的结晶膜，具有结晶膜的单晶衬底，结晶膜，制造具有结晶性膜，结晶性基材的制造方法以及元件的制造方法。单晶衬底在单晶衬底的表面的至少一部分区域上形成粗糙表面。为了得到具有结晶膜的单晶基板，通过在未形成粗糙面的粗糙面未成形面上进行外延生长而形成单晶膜，并且结晶膜的结晶度低于通过在单晶衬底的粗糙表面形成表面上外延生长形成单晶膜。

85. 发明申请

US20150218728A1 GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS WITH THERMAL-GRADIENT CONTROL 有权
标题翻译：具有热梯度控制的大型氮化铝单晶的生长
公开(公告)号：US20150218728A1
公开(公告)日：2015-08-06
申请号：US14686812
申请日：2015-04-15
申请人： Robert T. Bondokov , Shailaja P. Rao , Shawn R. Gibb , Leo J. Schowalter
发明人： Robert T. Bondokov , Shailaja P. Rao , Shawn R. Gibb , Leo J. Schowalter
IPC分类号： C30B23/00 , C30B29/40 , C30B23/06
CPC分类号： C30B23/002 , C30B23/06 , C30B29/403
摘要： In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
摘要翻译：在各种实施例中，在形成半导体晶体期间，在两个热梯度（平行于垂直）的比率小于10的生长室内形成基本平行且基本垂直于生长方向的生长室内的非零热梯度，其中两个热梯度（平行于垂直）的比例小于10，，例如在生长室外设置热屏蔽。

86. 发明授权

US09096950B2 Nitride crystal and method for producing the same 有权
标题翻译：氮化物晶体及其制造方法
公开(公告)号：US09096950B2
公开(公告)日：2015-08-04
申请号：US13164939
申请日：2011-06-21
申请人： Takashi Satoh , Seiji Sarayama , Hirokazu Iwata , Yusuke Mori , Yasuo Kitaoka
发明人： Takashi Satoh , Seiji Sarayama , Hirokazu Iwata , Yusuke Mori , Yasuo Kitaoka
IPC分类号： B32B7/02 , C30B29/40 , C30B9/10
CPC分类号： C30B19/02 , C30B9/10 , C30B19/08 , C30B19/10 , C30B29/403 , C30B29/406 , Y10T428/24942
摘要： A nitride crystal which encircles an outer periphery of a seed crystal, the nitride crystal in an embodiment includes: a first partial region, and a second partial region that has optical characteristics different from those of the first partial region and has optical characteristics which indicate the crystal orientation.
摘要翻译：一种环绕晶种的外周的氮化物晶体，在一个实施方案中，氮化物晶体包括：第一部分区域和具有与第一部分区域的光学特性不同的光学特性的第二部分区域，并且具有指示晶体取向。

87. 发明申请

US20150214050A1 NANOWIRE ARTICLE AND PROCESSES FOR MAKING AND USING SAME 有权
标题翻译：纳米制品和制造和使用它们的方法
公开(公告)号：US20150214050A1
公开(公告)日：2015-07-30
申请号：US14679249
申请日：2015-04-06
申请人： MATTHEW D. BRUBAKER , WILLIAM M. OLD , NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
发明人： Kristine A. Bertness , Matthew D. Brubaker , William M. Old
IPC分类号： H01L21/02
CPC分类号： H01L21/02603 , B82Y10/00 , B82Y35/00 , B82Y40/00 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02642 , H01L29/0665
摘要： A nanowire article includes a substrate; a plurality of nanowires disposed on the substrate, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table; and a superlattice layer interposed between the substrate and the plurality of gallium nitride nanowires. A process for producing a nanowire article includes disposing a superlattice layer on a substrate; disposing a first buffer layer on the superlattice layer; contacting the first buffer layer with a precursor; and forming a plurality of nanowires from the precursor on the first buffer layer to form the nanowire article, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table. A process for producing a nanowire article includes nitrogenating a substrate to form a nitrogenated layer on the substrate; contacting the nitrogenated layer with a precursor; and forming a plurality of gallium nitride nanowires from the precursor on the nitrogenated layer to form the nanowire article in an absence of a catalyst, wherein individual gallium nitride nanowires of the plurality of gallium nitride nanowires include a length axis that is substantially perpendicular to the nitrogenated layer.
摘要翻译：纳米线制品包括基材; 设置在所述衬底上的多个纳米线，所述纳米线包括半导体氮化物，所述半导体包括选自周期表第3组的元素; 以及插入在所述基板和所述多个氮化镓纳米线之间的超晶格层。制造纳米线制品的方法包括在基材上设置超晶格层; 在超晶格层上设置第一缓冲层; 使第一缓冲层与前体接触; 以及从所述第一缓冲层上的所述前体形成多个纳米线以形成所述纳米线制品，所述纳米线包含半导体氮化物，所述半导体包含选自周期表第3族的元素。一种纳米线制品的制造方法，包括使基材氮化以在基材上形成氮化层; 使氮化层与前体接触; 以及在不存在催化剂的情况下从所述氮化层上的所述前体形成多个氮化镓纳米线，以在不存在催化剂的情况下形成所述纳米线制品，其中所述多个氮化镓纳米线中的各个氮化镓纳米线包括基本上垂直于所述氮化物层。

88. 发明授权

US09070828B2 III nitride semiconductor substrate, epitaxial substrate, and semiconductor device 有权
标题翻译： III族氮化物半导体衬底，外延衬底和半导体器件
公开(公告)号：US09070828B2
公开(公告)日：2015-06-30
申请号：US14476081
申请日：2014-09-03
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Keiji Ishibashi
IPC分类号： H01L33/00 , H01L33/32 , C23C16/30 , C30B25/18 , C30B29/40 , H01L21/02 , H01L33/12 , H01L23/00
CPC分类号： H01L33/325 , C23C16/303 , C30B25/186 , C30B29/403 , H01L21/02389 , H01L21/02433 , H01L21/02439 , H01L21/0254 , H01L21/02658 , H01L24/32 , H01L33/00 , H01L33/12 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/0002 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： In a semiconductor device 100, it is possible to prevent C from piling up at a boundary face between an epitaxial layer 22 and a group III nitride semiconductor substrate 10 by the presence of 30×1010 pieces/cm2 to 2000×1010 pieces/cm2 of sulfide in terms of S and 2 at % to 20 at % of oxide in terms of O in a surface layer 12 with a front surface 10a having a specific plane orientation. Accordingly, a high-resistivity layer is prevented from being formed at the boundary face between the epitaxial layer 22 and the group III nitride semiconductor substrate 10. Consequently, it is possible to improve the emission intensity of the semiconductor device 100.
摘要翻译：在半导体器件100中，可以通过存在30×10 10片/ cm 2〜2000×10 10片/ cm 2的范围来防止C在外延层22和III族氮化物半导体衬底10之间的边界面堆积在具有特定面取向的前表面10a的表面层12中，以S为基准的硫化物和2at％至20at％的氧化物。因此，防止在外延层22和III族氮化物半导体衬底10之间的边界面处形成高电阻率层。因此，可以提高半导体器件100的发光强度。

89. 发明申请

US20150176154A1 NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
标题翻译：氮化物半导体多层结构，其制造方法和氮化物半导体发光元件
公开(公告)号：US20150176154A1
公开(公告)日：2015-06-25
申请号：US14641076
申请日：2015-03-06
申请人： PANASONIC CORPORATION , RIKEN
发明人： Takayoshi TAKANO , Kenji TSUBAKI , Hideki HIRAYAMA , Sachie FUJIKAWA
IPC分类号： C30B25/14 , C30B29/40
CPC分类号： C30B25/14 , C30B25/16 , C30B25/186 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/12 , H01L33/32
摘要： The nitride semiconductor light-emitting element of the invention has a stacked structure of a buffer layer, an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer, on one surface side of a single crystal substrate of a sapphire substrate. A nitride semiconductor multilayer structure as the buffer layer includes: a plurality of island-like nuclei formed of AlN and formed on the one surface of the single crystal substrate; a first nitride semiconductor layer formed of an AlN layer and formed on the one surface side of the single crystal substrate so as to fill gaps between adjacent nuclei and to cover all the nuclei; and a second nitride semiconductor layer formed of an AlN layer and formed on the first nitride semiconductor layer. The nitride semiconductor multilayer structure is characterized in that the density of the nuclei is less than 6×109 nuclei cm−2.
摘要翻译：本发明的氮化物半导体发光元件在单晶的一个表面侧具有缓冲层，n型氮化物半导体层，发光层和p型氮化物半导体层的层叠结构蓝宝石衬底的衬底。作为缓冲层的氮化物半导体多层结构体包括：形成在单晶衬底的一个表面上的由AlN形成的多个岛状核; 由AlN层形成的第一氮化物半导体层，形成在单晶衬底的一个表面侧，以填充相邻核之间的间隙并覆盖所有核; 以及由AlN层形成并形成在第一氮化物半导体层上的第二氮化物半导体层。氮化物半导体多层结构的特征在于，核的密度小于6×109个核cm-2。

90. 发明授权

US09064706B2 Composite of III-nitride crystal on laterally stacked substrates 有权
标题翻译：在侧向堆叠的基板上的III族氮化物晶体的复合物
公开(公告)号：US09064706B2
公开(公告)日：2015-06-23
申请号：US14491962
申请日：2014-09-19
申请人： Sumitomo Electric Industries, Ltd.
发明人： Naho Mizuhara , Koji Uematsu , Michimasa Miyanaga , Keisuke Tanizaki , Hideaki Nakahata , Seiji Nakahata , Takuji Okahisa
IPC分类号： H01L29/04 , H01L29/20 , C30B9/12 , C30B19/02 , C30B23/02 , C30B25/20 , C30B29/40 , H01L21/02 , C30B25/18
CPC分类号： H01L29/045 , C30B9/12 , C30B19/02 , C30B23/025 , C30B25/18 , C30B25/20 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L29/2003 , H01L29/73 , H01L29/772 , H01L29/778 , H01L29/872 , H01L33/16
摘要： Group-III nitride crystal composites made up of especially processed crystal slices, cut from III-nitride bulk crystal, whose major surfaces are of {1-10±2}, {11-2±2}, {20-2±1} or {22-4±1} orientation, disposed adjoining each other sideways with the major-surface side of each slice facing up, and III-nitride crystal epitaxially present on the major surfaces of the adjoining slices, with the III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms. With x-ray diffraction FWHMs being measured along an axis defined by a direction of the substrate projected onto either of the major surfaces, FWHM peak regions are present at intervals of 3 to 5 mm width. Also, with threading dislocation density being measured along a direction of the III-nitride crystal substrate, threading-dislocation-density peak regions are present at the 3 to 5 mm intervals.
摘要翻译： III-III族氮化物晶体复合材料由III-氮化物块状晶体切割的特别加工的晶片组成，其主表面为{1-10±2}，{11-2±2}，{20-2±1} 或{22-4±1}取向，其中每个切片的主表面侧面朝上地彼此相邻地设置，并且III-氮化物晶体外延地存在于相邻切片的主表面上，其中III族氮化物晶体包含作为主要杂质，硅原子或氧原子。利用X射线衍射测定FWHM，沿着投影到任一主表面上的衬底的<0001>方向限定的轴测量，FWHM峰值区域以3至5mm的间隔存在。此外，沿着III族氮化物晶体衬底的<0001>方向测量穿透位错密度，穿透位错密度峰值区域以3至5mm的间隔存在。

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