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81. 发明申请

US20150262789A1 METHOD FOR INCREASED TARGET UTILIZATION IN ION BEAM DEPOSITION TOOLS 有权
标题翻译：在离子束沉积工具中增加目标使用的方法
公开(公告)号：US20150262789A1
公开(公告)日：2015-09-17
申请号：US14643371
申请日：2015-03-10
申请人： Mario B. Roque , Victor L. Castro
发明人： Mario B. Roque , Victor L. Castro
IPC分类号： H01J37/30
CPC分类号： H01J37/3002 , C23C14/3407 , C23C14/46 , H01J37/34 , H01J37/3417 , H01J37/3435 , H01J2237/3146
摘要： In a sputter deposition tool (100) of the type in which an ion source (101) generates a beam directed at a sputtering target, the sputtering target comprises an elongated exterior skirt (102) and a generally circular insert (103) positioned within the skirt, the surfaces of the skirt and insert being relatively coplanar and forming the surface of the target, with the elongated dimension of the skirt being axially oriented toward the ion source. The insert is rotated within the skirt to one of several positions during use of the target by the sputter deposition tool, to distribute wear of the target around the rotating insert and thus increase the utilization and useful life of the overall target assembly.
摘要翻译：在其中离子源（101）产生指向溅射靶的光束的溅射沉积工具（100）中，溅射靶包括细长的外裙部（102）和大致圆形的插入件（103），其位于裙部，裙部和插入物的表面相对共面并且形成靶的表面，裙部的细长尺寸被轴向定向为离子源。通过溅射沉积工具在刀片的使用期间，将刀片在裙部内旋转到多个位置中的一个位置，以分散目标围绕旋转刀片的磨损，从而增加了整个目标组件的利用率和使用寿命。

82. 发明授权

US09127362B2 Process kit and target for substrate processing chamber 有权
标题翻译：基板处理室的工艺套件和目标
公开(公告)号：US09127362B2
公开(公告)日：2015-09-08
申请号：US11553982
申请日：2006-10-27
申请人： Kathleen Scheible , Michael Allen Flanigan , Goichi Yoshidome , Adolph Miller Allen , Cristopher M. Pavloff
发明人： Kathleen Scheible , Michael Allen Flanigan , Goichi Yoshidome , Adolph Miller Allen , Cristopher M. Pavloff
IPC分类号： C23C14/00 , C23C14/50 , H01L21/687 , C23C14/34 , H01J37/34
CPC分类号： H01J37/3488 , C23C14/3407 , C23C14/50 , H01J37/34 , H01J37/3441 , H01J37/3447 , H01L21/68735
摘要： A process kit comprises a ring assembly that is placed about a substrate support in a substrate processing chamber to reduce deposition of process deposits on the chamber components and on an overhang edge of the substrate. The process kit includes a deposition ring, cover ring, and anti-lift bracket, and can also include a unitary shield. A target is also described.
摘要翻译：处理套件包括环组件，该环组件围绕衬底处理室中的衬底支撑件放置，以减少工艺沉积物沉积在腔室部件上以及衬底的突出边缘上的沉积。处理套件包括沉积环，盖环和防起重托架，并且还可以包括整体式护罩。还描述了一个目标。

83. 发明授权

US09127353B2 Film-Forming apparatus and Film-Forming method 有权
标题翻译：成膜装置和成膜方法
公开(公告)号：US09127353B2
公开(公告)日：2015-09-08
申请号：US13359802
申请日：2012-01-27
申请人： Seiken Matsumoto , Seiji Kuwabara
发明人： Seiken Matsumoto , Seiji Kuwabara
IPC分类号： C23C14/34 , C23C14/35 , H01J37/34
CPC分类号： C23C14/3407 , C23C14/3428 , C23C14/3464 , C23C14/352 , H01J37/3417 , H01J37/3429 , H01J37/3447
摘要： Provided are a film-forming apparatus and a film-forming method capable of preventing complication of an apparatus mechanism in formation of a thin film of multiple materials by sputtering to simplify the apparatus mechanism and preventing an increase in an apparatus cost. The film-forming apparatus includes a vacuum chamber, a substrate holder for holding a substrate, cathode mechanisms for supporting targets respectively so that the targets can be opposed to the substrate in the vacuum chamber, and shutters movable forward and backward individually between the targets made of different materials and the substrate to block or pass film-forming particles generated from the targets. At least one of the shutters is formed of a target material different from those for the targets so that the at least one of the shutters is configured as a shutter that also functions as a target.
摘要翻译：提供一种成膜装置和成膜方法，能够通过溅射来防止形成多种材料的薄膜的装置机构的复杂化，从而简化装置机构并防止装置成本的增加。成膜装置包括真空室，用于保持基板的基板保持器，用于分别支撑目标的阴极机构，使得靶可以与真空室中的基板相对，以及在所制成的目标之间单独地向前和向后移动的百叶窗的不同材料和基材以阻挡或通过由靶产生的成膜颗粒。百叶窗中的至少一个由与目标材料不同的目标材料形成，使得至少一个快门被配置为也用作目标的快门。

84. 发明授权

US09127352B2 Cylindrical sputtering target, and method for manufacturing same 有权
标题翻译：圆柱形溅射靶，及其制造方法
公开(公告)号：US09127352B2
公开(公告)日：2015-09-08
申请号：US13120863
申请日：2009-09-18
申请人： Kenichi Itoh , Kimiaki Tamano , Shigehisa Todoko , Tetsuo Shibutami
发明人： Kenichi Itoh , Kimiaki Tamano , Shigehisa Todoko , Tetsuo Shibutami
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： C23C14/3407 , H01J37/3423 , H01J37/3435 , Y10T156/10
摘要： Provided is a cylindrical sputtering target which attains a high production yield in a film-forming process even when a film is formed by sputtering with a long cylindrical sputtering target constituted by a plurality of cylindrical target materials.A multi-divided cylindrical sputtering target formed by bonding a cylindrical base and a plurality of cylindrical target materials together with a bonding material has a divided portion where adjacent cylindrical target materials are arranged with a gap therebetween, while outer peripheral faces of the adjacent cylindrical target materials have a step of 0.5 mm or less therebetween in the divided portion. Such a target is obtained by fixing the cylindrical target materials with reference to the outer peripheral faces of the cylindrical target materials when arranging the cylindrical target materials with reference to the cylindrical base.
摘要翻译：提供了一种圆柱形溅射靶，即使在用由多个圆柱形目标材料构成的长圆柱形溅射靶通过溅射形成膜时，在成膜过程中也能获得高生产率。通过将圆柱形基底和多个圆柱形目标材料与接合材料一起接合而形成的多分割圆柱形溅射靶具有分开的部分，其中相邻的圆柱形靶材料间隔开间隔，而相邻圆柱形靶材的外周面在分割部分中，材料的间隔为0.5mm以下。这样的目标是通过相对于圆筒状的基体配置圆筒状靶材时，相对于圆筒状靶材的外周面固定圆筒状的靶材。

85. 发明授权

US09108273B2 Methods of manufacturing large-area sputtering targets using interlocking joints 有权
标题翻译：使用互锁接头制造大面积溅射靶的方法
公开(公告)号：US09108273B2
公开(公告)日：2015-08-18
申请号：US13628090
申请日：2012-09-27
申请人： H.C. Starck, Inc.
发明人： Scott Jeffrey Volchko , William Loewenthal , Stefan Zimmermann , Mark Gaydos , Steven Alfred Miller
IPC分类号： B05D1/02 , B23K31/02 , C23C14/34 , C23C24/04
CPC分类号： H01J37/3429 , B05D1/02 , B23K31/02 , C23C14/3407 , C23C14/3414 , C23C24/04 , H01J37/3417 , H01J37/3426 , H01J2237/081 , H01J2237/332 , Y10T156/10
摘要： In various embodiments, joined sputtering targets are formed at least in part by spray deposition of the sputtering material and/or welding.
摘要翻译：在各种实施例中，至少部分地通过溅射材料的喷涂和/或焊接形成连接的溅射靶。

86. 发明申请

US20150214043A1 DEPOSITION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：沉积方法和制造半导体器件的方法
公开(公告)号：US20150214043A1
公开(公告)日：2015-07-30
申请号：US14680159
申请日：2015-04-07
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Makoto FURUNO
IPC分类号： H01L21/02 , C23C14/08 , C23C14/34
CPC分类号： H01L21/02266 , C23C14/0036 , C23C14/08 , C23C14/3407 , C23C14/3414 , H01L21/02112 , H01L21/8232 , H01L27/0688 , H01L27/11521 , H01L27/11551 , H01L27/1156 , H01L27/1207 , H01L27/1225 , H01L27/1251 , H01L28/60 , H01L29/4908 , H01L29/66477 , H01L29/66742 , H01L29/66969 , H01L29/78645 , H01L29/7869
摘要： An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a transistor. An insulating film is formed by a DC sputtering method or a pulsed DC sputtering method, using an oxide target including gallium oxide (also referred to as GaOX). The oxide target includes GaOX, and X is less than 1.5, preferably more than or equal to 0.01 and less than or equal to 0.5, further preferably more than or equal to 0.1 and less than or equal to 0.2. The oxide target has conductivity, and sputtering is performed in an oxygen gas atmosphere or a mixed atmosphere of an oxygen gas and a rare gas such as argon.
摘要翻译：本发明的目的是提供一种通过DC溅射法形成氧化镓膜的沉积方法。另一个目的是提供一种使用氧化镓膜作为绝缘层的半导体器件的制造方法，例如晶体管的栅极绝缘层。使用包含氧化镓（也称为GaOX）的氧化物靶，通过DC溅射法或脉冲DC溅射法形成绝缘膜。氧化物靶包括GaOX，X小于1.5，优选大于或等于0.01且小于或等于0.5，进一步优选大于或等于0.1且小于或等于0.2。氧化物靶具有导电性，并且在氧气气氛或氧气和稀有气体如氩气的混合气氛中进行溅射。

87. 发明授权

US09090974B2 Electronic device manufacturing method and sputtering method 有权
标题翻译：电子器件制造方法和溅射法
公开(公告)号：US09090974B2
公开(公告)日：2015-07-28
申请号：US13596734
申请日：2012-08-28
申请人： Nobuo Yamaguchi , Kazuaki Matsuo
发明人： Nobuo Yamaguchi , Kazuaki Matsuo
IPC分类号： C23C14/34 , C23C14/50 , H01J37/34
CPC分类号： H01J37/3441 , C23C14/0068 , C23C14/3407 , C23C14/35 , C23C14/50 , C23C14/505 , C23C14/564 , H01J37/3405 , H01J37/3447 , H01J2237/3323
摘要： An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.
摘要翻译：一种电子设备制造方法，包括：第一步骤，使基板保持器靠近第一屏蔽部件移动，并且定位形成在第一屏蔽部件上的具有环形的第一突出部分和具有环形的第二突出部分，并形成在第二屏蔽构件，其安装在基板保持件的表面上，在基板的外周部分处于非接触状态下彼此接合的位置;第二步骤，在第一步骤之后，溅射靶，同时保持第一突出部分和第二突出部分在非接触状态下彼此接合的位置，以及第三步骤，在第二步骤之后，将第一屏蔽构件设置在打开状态，并溅射靶以在基板上进行沉积。

88. 发明申请

US20150170889A1 DIFFUSION BONDED HIGH PURITY COPPER SPUTTERING TARGET ASSEMBLIES 有权
标题翻译：扩散粘合高纯度铜喷溅目标组件
公开(公告)号：US20150170889A1
公开(公告)日：2015-06-18
申请号：US14105589
申请日：2013-12-13
申请人： Jaydeep Sarkar , Paul Gilman
发明人： Jaydeep Sarkar , Paul Gilman
IPC分类号： H01J37/34
CPC分类号： H01J37/3426 , C23C14/3407 , C23C14/3414 , H01J37/34 , H01J37/3435
摘要： The present invention relates to novel and improved high purity diffusion bonded copper (Cu) sputtering targets having a Cu purity level of 99.9999% (6N) or greater. The target assemblies of the present invention exhibit sufficient bond strength and microstructural homogeneity, both of which are properties previously considered mutually exclusive for conventional 6N Cu target assemblies. The grain structure is characterized by an absence of alloying elements and the bonded interface is generally flat without any type of interlayer or interlocking arrangement.
摘要翻译：本发明涉及Cu纯度为99.9999％（6N）以上的新颖且改进的高纯度扩散接合铜（Cu）溅射靶。本发明的目标组件表现出足够的粘合强度和微观结构均匀性，这两者都是先前被认为是传统的6N Cu靶组件相互排斥的特性。晶粒结构的特征在于不存在合金元素，并且结合界面通常是平坦的，没有任何类型的中间层或互锁装置。

89. 发明授权

US09035297B2 Thin-film transistor and zinc oxide-based sputtering target for the same 有权
标题翻译：薄膜晶体管和氧化锌基溅射靶相同
公开(公告)号：US09035297B2
公开(公告)日：2015-05-19
申请号：US13931697
申请日：2013-06-28
申请人： SAMSUNG CORNING PRECISION MATERIALS CO., LTD. , Samsung Display Co., Ltd.
发明人： Jaewoo Park , Yoon Gyu Lee , Do-Hyun Kim , Dongjo Kim , Juok Park , Insung Sohn , Sangwon Yoon , Gunhyo Lee , Yongjin Lee , Woo-Seok Jeon
IPC分类号： H01L29/10 , H01L29/12 , H01L29/786 , C23C14/34 , C23C14/08 , C23C14/00
CPC分类号： H01L29/78693 , C23C14/0036 , C23C14/086 , C23C14/3407 , C23C14/3414
摘要： A thin-film transistor includes a metal electrode and a zinc oxide-based barrier film that blocks a material from diffusing out of the metal electrode. The zinc oxide-based barrier film is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based barrier film. A zinc oxide-based sputtering target for deposition of a barrier film of a thin-film transistor is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based sputtering target.
摘要翻译：薄膜晶体管包括阻挡材料扩散出金属电极的金属电极和氧化锌基阻挡膜。基于氧化锌的阻挡膜由掺杂有氧化铟的氧化锌制成，氧化铟的含量为氧化锌系阻挡膜的1〜50重量％。用于沉积薄膜晶体管的阻挡膜的氧化锌基溅射靶由掺杂有氧化铟的氧化锌制成，氧化铟的含量为氧化锌基的1〜50重量％溅射靶。

90. 发明申请

US20150132606A1 RECORDING LAYER, INFORMATION RECORDING MEDIUM, AND TARGET 有权
标题翻译：记录层，信息记录介质和目标
公开(公告)号：US20150132606A1
公开(公告)日：2015-05-14
申请号：US14403060
申请日：2013-06-03
申请人： Sony Corporation
发明人： Kotaro Kurokawa , Yo Ota
IPC分类号： G11B7/24038 , G11B7/254 , C01G45/02 , G11B7/26 , C23C14/08 , C23C14/34 , G11B7/243 , G11B7/257
CPC分类号： G11B7/24038 , C01G19/00 , C01G25/00 , C01G25/02 , C01G41/00 , C01G45/006 , C01G45/02 , C01G55/002 , C01P2006/60 , C23C14/08 , C23C14/3407 , C23C14/3414 , C23C14/3464 , C23C14/3492 , G11B7/243 , G11B7/254 , G11B7/257 , G11B7/266 , G11B2007/24304 , G11B2007/24306 , G11B2007/2432 , G11B2007/24326 , G11B2007/25705
摘要： The present invention relates to an information recording medium that has good enough recording characteristics even without containing Pd. The information recording medium has a recording layer including an oxide of Mn in which Mn atoms are partially or fully present as Mn with a valence of +4.
摘要翻译：本发明涉及即使不含Pd也具有足够的记录特性的信息记录介质。信息记录介质具有包含Mn的氧化物的记录层，其中Mn原子部分或完全以Mn形式存在，价数为+4。

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