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    • 82. 发明申请
    • HIGH SENSITIVITY, SOLID STATE NEUTRON DETECTOR
    • 高灵敏度,固态中性探测器
    • US20110284755A1
    • 2011-11-24
    • US13146780
    • 2009-01-30
    • Pauls StradinsHoward M. BranzQi WangHarold R. Mchugh
    • Pauls StradinsHoward M. BranzQi WangHarold R. Mchugh
    • G01T3/08H01L21/28
    • H01L31/115G01T3/00G01T3/08H01L31/02
    • An apparatus (200) for detecting slow or thermal neutrons (160) including an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel. The neutron conversion layer (860) may be deposited on the contact pixels (830) such as with use of inkjet printing of nanoparticle ink.
    • 一种用于检测包括作为氢化非晶硅p-i-n二极管结构的α粒子检测层(240)的慢或热中子(160)的装置(200)。 该装置包括底部金属触点(220)和顶部金属触点(250),二极管结构(240)位于两个触点(220,250)之间,以便于检测α粒子(170)。 装置(200)包括由含有硼-10同位素的材料形成的中子转换层(230)。 顶部接触(250)被像素化,每个接触像素延伸到或靠近设备的边缘以促进电接触。 接触像素具有细长体以允许它们跨越装置表面(242)延伸,每个像素具有小的表面积,以基于连接到每个像素的电流尖峰检测电路或放大器匹配电容。 中子转换层(860)可以沉积在接触像素(830)上,例如使用纳米颗粒油墨的喷墨印刷。
    • 84. 发明授权
    • Method of secure communication between endpoints
    • 端点之间安全通信的方法
    • US07934088B2
    • 2011-04-26
    • US11587562
    • 2005-03-31
    • Qi Wang
    • Qi Wang
    • H04L29/06H04L9/32H04L9/00G06F7/04G06Q20/00
    • H04L63/0428G06Q20/027H04L9/0844H04L63/06H04L63/08H04L2463/062
    • The method of secure communication between the endpoints is used for the secret communication between endpoints locating in different gatekeeper management area, and the method includes: in the process of the caller endpoint calling the callee endpoint, the home gatekeeper of the callee endpoint generates the share secret key between the caller endpoint and the callee endpoint; the secure communication process is performed between the caller endpoint and the callee endpoint according to the share secret key. According to the secure communication method between the endpoints, the invention makes that secret communication mechanism between the endpoints locating the different gatekeeper management area has better expansibility and higher efficiency.
    • 端点之间的安全通信方法用于定位在不同网守管理区域的端点之间的秘密通信,该方法包括:在主叫端点呼叫被叫端点的过程中,被叫方端点的归属网守产生共享 主叫端点和被叫终端之间的秘密密钥; 根据共享秘密密钥在呼叫者端点和被叫方端点之间执行安全通信处理。 根据端点之间的安全通信方式,本发明使定位不同网守管理区域的端点之间的秘密通信机制具有更好的可扩展性和更高的效率。
    • 88. 发明授权
    • Bandgap engineered MOS-gated power transistors
    • 带隙工程MOS门控功率晶体管
    • US07755137B2
    • 2010-07-13
    • US11245995
    • 2005-10-07
    • Gary DolnyQi Wang
    • Gary DolnyQi Wang
    • H01L29/76
    • H01L29/7813H01L29/1054H01L29/165H01L29/49H01L29/4933H01L29/66734H01L29/7782Y02P70/605
    • Devices, methods, and processes that improve immunity to transient voltages and reduce parasitic impedances. Immunity to unclamped inductive switching events is improved. For example, a trench-gated power MOSFET device having a SiGe source is provided, where the SiGe source reduces parasitic npn transistor gain by reducing hole current in the body or well region, thereby decreasing the likelihood of a latch-up condition. A body tie on this device can also be eliminated to reduce transistor cell size. A trench-gated power MOSFET device having a SiGe body or well region is also provided. A SiGe body reduces hole current when the body diode is turned on, thereby reducing reverse recovery power losses. Device characteristics are also improved. For example, parasitic gate impedance is reduced through the use of a poly SiGe gate, and channel resistance is reduced through the use of a SiGe layer near the device's gate.
    • 提高对瞬态电压的抗扰度并减少寄生阻抗的器件,方法和过程。 提高对松开感应开关事件的抗扰度。 例如,提供了具有SiGe源的沟槽门控功率MOSFET器件,其中SiGe源通过减少主体或阱区中的空穴电流来降低寄生npn晶体管增益,从而降低闩锁状态的可能性。 也可以消除该器件上的身体接合以减少晶体管电池尺寸。 还提供了具有SiGe体或阱区的沟槽栅功率MOSFET器件。 当体二极管导通时,SiGe体减小空穴电流,从而降低反向恢复功率损耗。 设备特性也得到改善。 例如,通过使用多晶硅栅极减少寄生栅极阻抗,并且通过在器件栅极附近使用SiGe层来减小沟道电阻。