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81. 发明授权

US08952728B2 Semiconductor device and method of driving semiconductor device 有权
标题翻译：半导体装置及其驱动方法
公开(公告)号：US08952728B2
公开(公告)日：2015-02-10
申请号：US13217578
申请日：2011-08-25
申请人： Yoshiya Takewaki , Yutaka Shionoiri , Koichiro Kamata
发明人： Yoshiya Takewaki , Yutaka Shionoiri , Koichiro Kamata
IPC分类号： H03K5/153 , H03K19/00
CPC分类号： H03K19/0016
摘要： An object of the invention is to reduce the power consumption of a semiconductor device that requires a plurality of reference potentials and a method of driving the semiconductor device. Disclosed is a semiconductor device having a potential divider circuit in which a potential supplied to a power supply line is resistively divided by resistors connected in series to the power supply line so that a desired potential is output through a switch transistor electrically connected to the power supply line. A drain terminal of the switch transistor is electrically connected to a gate terminal of a transistor provided in a circuit on the output side (or to one terminal of a capacitor) to form a node. The switch transistor has an off current low enough to hold the desired voltage in the node even when the potential is no more supplied to the power supply line.
摘要翻译：本发明的目的是降低需要多个参考电位的半导体器件的功耗以及驱动半导体器件的方法。公开了一种具有分压器电路的半导体器件，其中提供给电源线的电位被电阻器电阻分压，电阻器与电源线串联连接，从而通过电连接到电源的开关晶体管输出期望的电位线。开关晶体管的漏极端子电连接到设置在输出侧（或电容器的一个端子）的电路中的晶体管的栅极端子，以形成节点。开关晶体管具有足够低的关断电流，以便即使当电势不再供应到电源线时，也能够在节点中保持期望的电压。

82. 发明授权

US08811901B2 Wireless power feeding system and wireless power feeding method 有权
标题翻译：无线供电系统和无线供电方式
公开(公告)号：US08811901B2
公开(公告)日：2014-08-19
申请号：US13189862
申请日：2011-07-25
申请人： Yutaka Shionoiri , Koichiro Kamata , Misako Sato , Shuhei Maeda
发明人： Yutaka Shionoiri , Koichiro Kamata , Misako Sato , Shuhei Maeda
IPC分类号： H04B7/00 , H04B1/00
CPC分类号： H02J50/12 , H02J7/025 , H02J17/00 , H02J50/20 , H02J50/40 , H02J50/80 , H02J50/90
摘要： An object is to provide a power feeding system and a power feeding method which are more convenient for a power feeding user at the power receiving end, without causing increases in complexity and size of devices. An object is to provide a power feeding system and a power feeding method which also allow a power feeding provider (a company) which feeds power (at the power transmitting end) to supply power without waste. A power feeding device which wirelessly supplies power to a power receiver detects the position and the resonant frequency of the power receiver by receiving a position and resonant frequency detection signal using a plurality of sub-carriers having different frequencies from the power receiver, and controls the frequency of a power signal to be transmitted to the power receiver on the basis of the information. An efficient power feeding service can be offered by transmitting a power signal to the power receiver at an optimum frequency for high power transmission efficiency.
摘要翻译：本发明的目的是提供一种供电系统和馈电方法，其对于供电用户在电力接收端更方便，而不会增加设备的复杂性和尺寸。本发明的目的是提供一种馈电系统和馈电方法，其还允许馈电供应商（在发电端发电）供电而不浪费电力。向功率接收器无线供电的供电装置通过使用具有与电力接收器不同的频率的多个子载波接收位置和谐振频率检测信号来检测电力接收器的位置和谐振频率，并且控制根据该信息将电力信号的频率发送到电力接收器。通过以最佳频率向功率接收器发送功率信号以实现高功率传输效率，可以提供有效的馈电服务。

83. 发明授权

US08698219B2 Semiconductor memory device having a low off state current and high repeatability 有权
标题翻译：具有低关断状态电流和高重复性的半导体存储器件
公开(公告)号：US08698219B2
公开(公告)日：2014-04-15
申请号：US13004200
申请日：2011-01-11
申请人： Yusuke Sekine , Yutaka Shionoiri , Kiyoshi Kato , Shunpei Yamazaki
发明人： Yusuke Sekine , Yutaka Shionoiri , Kiyoshi Kato , Shunpei Yamazaki
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L27/105 , H01L27/1052 , H01L27/1156 , H01L27/1207 , H01L27/1225
摘要： A semiconductor device has a non-volatile memory cell including a write transistor which includes an oxide semiconductor and has small leakage current in an off state (off-state current) between a source and a drain, a read transistor including a semiconductor material different from that of the write transistor, and a capacitor. Data is written or to the memory cell by applying a potential to a node where one of a source electrode and drain electrode of the write transistor, one electrode of the capacitor, and a gate electrode of the read transistor are electrically connected to one another so that the predetermined amount of charge is held in the node. The memory window width is changed by 2% or less, before and after 1×109 times of writing.
摘要翻译：半导体器件具有包括写入晶体管的非易失性存储单元，该晶体管包括氧化物半导体，并且在源极和漏极之间的截止状态（截止状态电流）中具有小的漏电流，读取晶体管包括不同于写晶体管和电容器。通过向写入晶体管的源电极和漏电极，电容器的一个电极和读取晶体管的栅电极之一彼此电连接的节点施加电位而将数据写入或存储到存储器单元，从而在节点中保持预定量的电荷。 1×109次写入之前和之后，存储窗宽度改变2％以下。

84. 发明授权

US08614910B2 Semiconductor device and method for driving the same 有权
标题翻译：半导体装置及其驱动方法
公开(公告)号：US08614910B2
公开(公告)日：2013-12-24
申请号：US13186879
申请日：2011-07-20
申请人： Yutaka Shionoiri
发明人： Yutaka Shionoiri
IPC分类号： G11C5/06 , G11C5/10 , G11C8/08 , G11C11/24 , G11C11/36 , G11C11/40 , G11C11/401
CPC分类号： G11C11/4085 , G11C11/405 , H01L27/1225
摘要： An object is to provide a semiconductor device in which lower power consumption is realized by lowering voltage for data writing without increase in types of power supply potentials. Another object is to provide a semiconductor device in which threshold voltage drop of a selection transistor is suppressed without increase in types of power supply potentials for data writing. A diode-connected transistor is electrically connected in series with a word line electrically connected to a gate of an n-channel selection transistor. A capacitor is provided between the word line and a bit line electrically connected to one of a source and a drain of the selection transistor; alternatively, the capacitance between the bit line and the word line is used. In data writing, the timing of selecting the word line is earlier than the timing of selecting the bit line.
摘要翻译：本发明的目的是提供一种半导体器件，其中通过降低数据写入的电压而不增加电源电位的类型来实现低功耗。另一个目的是提供一种其中抑制选择晶体管的阈值电压降而不增加用于数据写入的电源电位类型的半导体器件。二极管连接的晶体管与电连接到n沟道选择晶体管的栅极的字线串联电连接。在字线和电连接到选择晶体管的源极和漏极之间的位线之间提供电容器; 或者，使用位线和字线之间的电容。在数据写入时，选择字线的时间早于选择位线的定时。

85. 发明授权

US08552712B2 Current measurement method, inspection method of semiconductor device, semiconductor device, and test element group 有权
标题翻译：电流测量方法，半导体器件，半导体器件和测试元件组的检测方法
公开(公告)号：US08552712B2
公开(公告)日：2013-10-08
申请号：US13085606
申请日：2011-04-13
申请人： Kiyoshi Kato , Yusuke Sekine , Yutaka Shionoiri , Kazuma Furutani
发明人： Kiyoshi Kato , Yusuke Sekine , Yutaka Shionoiri , Kazuma Furutani
IPC分类号： G01R19/00 , G01R13/04
CPC分类号： G01R31/2601 , G01R19/0092
摘要： One object is to provide a method for measuring current by which minute current can be measured. A value of current flowing through an electrical element is not directly measured but is calculated from change in a potential observed in a predetermined period. The method for measuring current includes the steps of: applying a predetermined potential to a first terminal of an electrical element having the first terminal and a second terminal; measuring an amount of change in a potential of a node connected to the second terminal; and calculating, from the amount of change in the potential, a value of current flowing between the first terminal and the second terminal of the electrical element. Thus, the value of minute current can be measured.
摘要翻译：一个目的是提供一种用于测量可以测量微小电流的电流的方法。流过电气元件的电流的值不是直接测量的，而是根据在预定周期内观察到的电位的变化计算出的。用于测量电流的方法包括以下步骤：将预定电位施加到具有第一端子和第二端子的电气元件的第一端子; 测量连接到第二终端的节点的电位变化量; 以及根据所述电位变化量计算在所述电气元件的所述第一端子和所述第二端子之间流动的电流值。因此，可以测量微小电流的值。

86. 发明授权

US08540161B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08540161B2
公开(公告)日：2013-09-24
申请号：US13187777
申请日：2011-07-21
申请人： Yutaka Shionoiri , Tatsuji Nishijima , Misako Sato , Shuhei Maeda
发明人： Yutaka Shionoiri , Tatsuji Nishijima , Misako Sato , Shuhei Maeda
IPC分类号： G06K19/06
CPC分类号： H01L27/13 , G06K19/07783 , H01L23/645 , H01L27/1225 , H01L2223/6677 , H01L2924/0002 , H01L2924/00
摘要： An object of this invention is to provide a semiconductor device (an RFID) with reduced loss of voltage/current corresponding to a threshold value of a transistor, and having a voltage/current rectification property. Another object of this invention is to simplify a fabrication process and a circuit configuration. A rectifier circuit is provided in an element included in a semiconductor device (RFID) capable of communicating data wirelessly. As compared to the case where only a diode is provided, coils are provided between gate terminals and drain terminals of transistors constituting the diode in a rectifier circuit, so that the coils overlap an antenna which receives a radio wave, whereby a voltage output by the rectifier circuit is increased using electromagnetic coupling between the antenna which receives a radio wave and the coils, so that the rectification efficiency is improved.
摘要翻译：本发明的目的是提供一种具有与晶体管的阈值相对应的具有降低的电压/电流损耗并且具有电压/电流整流特性的半导体器件（RFID）。本发明的另一个目的是简化制造过程和电路结构。整流电路设置在能够无线通信数据的半导体器件（RFID）中的元件中。与仅提供二极管的情况相比，在整流电路中在构成二极管的晶体管的栅极端子和漏极端子之间设置线圈，使得线圈与接收无线电波的天线重叠，由此由使用接收无线电波的天线与线圈之间的电磁耦合来提高整流电路，从而提高整流效率。

87. 发明授权

US08258862B2 Demodulation circuit and RFID tag including the demodulation circuit 有权
标题翻译：解调电路和RFID标签包括解调电路
公开(公告)号：US08258862B2
公开(公告)日：2012-09-04
申请号：US13026508
申请日：2011-02-14
申请人： Takanori Matsuzaki , Yutaka Shionoiri
发明人： Takanori Matsuzaki , Yutaka Shionoiri
IPC分类号： H03D1/00
CPC分类号： H03D1/18 , H01L27/1225
摘要： An object is to provide a demodulation circuit having a sufficient demodulation ability. Another object is to provide an RFID tag which uses a demodulation circuit having a sufficient demodulation ability. A material which enables a reverse current to be small enough, for example, an oxide semiconductor material, which is a wide bandgap semiconductor, is used in part of a transistor included in a demodulation circuit. By using the semiconductor material which enables a reverse current of a transistor to be small enough, a sufficient demodulation ability can be secured even when an electromagnetic wave having a high amplitude is received.
摘要翻译：目的在于提供具有足够的解调能力的解调电路。另一个目的是提供使用具有足够的解调能力的解调电路的RFID标签。在解调电路中包括的晶体管的一部分中使用能使反向电流足够小的材料，例如，宽带隙半导体的氧化物半导体材料。通过使用能够使晶体管的反向电流足够小的半导体材料，即使接收到具有高振幅的电磁波也能够确保足够的解调能力。

88. 发明授权

US08149018B2 Sense amplifier and electronic apparatus using the same 有权
公开(公告)号：US08149018B2
公开(公告)日：2012-04-03
申请号：US12940069
申请日：2010-11-05
申请人： Yutaka Shionoiri , Kiyoshi Kato , Munehiro Azami
发明人： Yutaka Shionoiri , Kiyoshi Kato , Munehiro Azami
IPC分类号： G01R19/00
CPC分类号： H03F3/45179 , G01R19/00 , G11C7/062 , G11C11/4091 , G11C11/413 , G11C2207/063 , H03F3/45183 , H03F3/45188 , H03F2203/45396 , H03F2203/45506 , H03F2203/45546 , H03F2203/45551 , H03F2203/45702 , H03F2203/45726
摘要： A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected.

89. 发明授权

US08044906B2 Semiconductor device, and display device and electronic device utilizing the same 有权
公开(公告)号：US08044906B2
公开(公告)日：2011-10-25
申请号：US12849885
申请日：2010-08-04
申请人： Hajime Kimura , Yutaka Shionoiri
发明人： Hajime Kimura , Yutaka Shionoiri
IPC分类号： G09G3/36
CPC分类号： G09G5/003 , G09G3/36 , G09G2310/0267 , G09G2310/0275 , G09G2310/0286 , G09G2310/0289 , G09G2330/021 , H01L27/124 , H01L27/1255 , H03K19/018507
摘要： A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor 101, the gate terminal of a first transistor 102 is brought into a floating state. At this time, the first transistor 102 is ON and its gate-source voltage is stored in a capacitor. Then, when a potential at the source terminal of the first transistor 102 is increased, a potential at the gate terminal of the first transistor 102 is increased as well by bootstrap effect. As a result, the amplitude of an output signal is prevented from being decreased.

90. 发明申请

US20110111721A1 Semiconductor Device and Driving Method Thereof 有权
标题翻译：半导体器件及其驱动方法
公开(公告)号：US20110111721A1
公开(公告)日：2011-05-12
申请号：US13010209
申请日：2011-01-20
申请人： Kiyoshi Kato , Yutaka Shionoiri
发明人： Kiyoshi Kato , Yutaka Shionoiri
IPC分类号： H04B1/16 , H04B7/00
CPC分类号： G06K19/07749 , H01L27/1214 , H01L27/1266 , H01L27/13
摘要： The invention provides a semiconductor device with high yield by reducing an effect of variations in characteristics of a semiconductor element. Further, by reducing an effect of variations in characteristics of a semiconductor element to improve productivity, an inexpensive semiconductor device can be provided. Further, an inexpensive semiconductor device can be provided by forming a semiconductor device in a large amount over a large substrate such as a glass substrate and a flexible substrate. A semiconductor device of the invention includes a demodulation signal generating circuit and an antenna or a wire for connecting the antenna. The demodulation signal generating circuit includes a demodulation circuit and a correction circuit. The correction circuit corrects a first demodulation signal generated from the demodulation circuit and generates a second demodulation signal.
摘要翻译：本发明通过减少半导体元件的特性变化的影响来提供高产率的半导体器件。此外，通过减少半导体元件的特性变化的影响以提高生产率，可以提供便宜的半导体器件。此外，通过在诸如玻璃基板和柔性基板的大基板上大量地形成半导体器件，可以提供廉价的半导体器件。本发明的半导体器件包括解调信号发生电路和用于连接天线的天线或导线。解调信号发生电路包括解调电路和校正电路。校正电路校正从解调电路产生的第一解调信号，并产生第二解调信号。

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