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    • 81. 发明申请
    • Mobile communication terminal, incoming data detecting method and incoming data detecting program
    • 移动通信终端,输入数据检测方法和输入数据检测程序
    • US20090129343A1
    • 2009-05-21
    • US12320103
    • 2009-01-16
    • Yutaka Kobayashi
    • Yutaka Kobayashi
    • H04W36/00
    • H04W48/20H04W60/04H04W68/02
    • Included are a system information receiving unit for receiving, from a first base station or a second base station, system information including a PI within a PICH and a PCH, and a cell reselecting unit for executing a cell reselection process for switching from a wireless communication with the first base station to that with the second base station if a mobile communication terminal fails to obtain local incoming information due to unsuccessful reception of the PCH, which is made by the system information receiving unit, after receiving a notification that incoming data exists by receiving the PI within the system information received by the system information receiving unit within the first service area. Consequently, the mobile communication terminal and incoming data detecting method and program, which can securely receive incoming data even if the mobile communication terminal fails to receive the PCH although receiving incoming information with the PI.
    • 包括系统信息接收单元,用于从第一基站或第二基站接收包括PICH和PCH内的PI的系统信息,以及用于执行用于从无线通信切换的小区重选过程的小区重选单元 如果移动通信终端由于系统信息接收单元所做的PCH的接收不成功而不能获得本地传入信息,则在第一基站与第二基站之间接收到接收到的数据存在的通知 在第一服务区域内接收由系统信息接收单元接收的系统信息内的PI。 因此,移动通信终端和输入数据检测方法和程序,即使移动通信终端不能接收PCH,也可以安全地接收输入数据,尽管用PI接收传入信息。
    • 82. 发明授权
    • Via hole depth detector
    • 通孔深度检测器
    • US07471384B2
    • 2008-12-30
    • US11896336
    • 2007-08-31
    • Keiji NomaruHiroshi MorikazuYasuomi KaneuchiKouichi NehashiYutaka Kobayashi
    • Keiji NomaruHiroshi MorikazuYasuomi KaneuchiKouichi NehashiYutaka Kobayashi
    • G01N21/00
    • G01B11/22B23K26/03B23K26/034B23K26/0643B23K26/382B23K26/40B23K2103/50
    • A via hole depth detector for detecting the depth of a via hole formed in a workpiece held on a chuck table, comprising: a first surface position detection means which comprises a first detection laser beam oscillation means for oscillating a first detection laser beam having a predetermined wavelength and detects the height position of an illuminated portion of the workpiece based on the reflected light of the first detection laser beam; a second surface position detection means which comprises a second detection laser beam oscillation means for oscillating a second detection laser beam having a wavelength different from the wavelength of the first detection laser beam and detects the height position of an illuminated portion of the workpiece based on the reflected light of the second detection laser beam; and a control means for obtaining the depth of the via hole formed in the workpiece based on a detection value obtained by the first surface position detection means and a detection value obtained by the second surface position detection means.
    • 一种通孔深度检测器,用于检测形成在保持在卡盘台上的工件中的通孔的深度,包括:第一表面位置检测装置,包括第一检测激光束振荡装置,用于振荡具有预定 基于第一检测激光束的反射光检测被照射部分的高度位置; 第二表面位置检测装置,其包括用于振荡具有与第一检测激光束的波长不同的波长的第二检测激光束的第二检测激光束振荡装置,并且基于该第二检测激光束振荡装置检测工件的被照射部分的高度位置 第二检测激光束的反射光; 以及控制装置,用于基于由第一表面位置检测装置获得的检测值和由第二表面位置检测装置获得的检测值来获得形成在工件中的通孔的深度。
    • 84. 发明申请
    • Laser beam irradiation apparatus and laser working machine
    • 激光束照射设备和激光加工机
    • US20080031291A1
    • 2008-02-07
    • US11888487
    • 2007-08-01
    • Yutaka KobayashiKouichi Nehashi
    • Yutaka KobayashiKouichi Nehashi
    • G02B26/08
    • B23K26/0665B23K26/032B23K26/064B23K26/0648B23K26/0853B23K26/0884B23K26/382B23K26/40B23K2101/40B23K2103/50
    • A laser beam irradiation apparatus includes an oscillation unit, an acousto-optic deflection unit for deflecting a laser beam oscillated by the oscillation unit, a condenser for condensing the deflected laser beam, and a control unit. The control unit determines an actual output power of the laser beam based on a light reception signal received from laser beam output detection means in response to a control signal for controlling a deflection angle adjustment unit of the deflection unit. Then, the control unit arithmetically operates the ratio of an actual output power corresponding to the control signal with reference to the lowest value of the actual output power. Further, the control unit arithmetically operates a correction value corresponding to the ratio of the actual output power to produce a control map and controls the output adjustment unit based on the control map.
    • 激光束照射装置包括振荡单元,用于偏转由振荡单元振荡的激光束的声光偏转单元,用于聚焦偏转的激光束的聚光器和控制单元。 控制单元响应于用于控制偏转单元的偏转角调节单元的控制信号,基于从激光束输出检测装置接收的光接收信号来确定激光束的实际输出功率。 然后,控制单元参照实际输出功率的最低值,算出与控制信号对应的实际输出功率的比值。 此外,控制单元对与实际输出功率的比例对应的校正值进行运算,以产生控制图,并且基于控制图来控制输出调整单元。
    • 87. 发明授权
    • Propylene/ethylene block copolymer composition for exterior automotive part
    • 用于外部汽车部件的丙烯/乙烯嵌段共聚物组合物
    • US06818690B1
    • 2004-11-16
    • US09701376
    • 2000-11-30
    • Yutaka KobayashiKenji TanakaYoshihisa Saeki
    • Yutaka KobayashiKenji TanakaYoshihisa Saeki
    • C08K552
    • C08J3/12C08F297/00C08F297/06C08J2353/00C08K5/523C08L53/00
    • A propylene-ethylene block copolymer composition having sufficient stiffness and mechanical strength required for the automobile exterior arts can be produced at low cost since no additional steps for blending other rubber components are required. The composition contains methylenebis(2,4-di-t-butylphenol) acid sodium phosphate which is blended with the propylene-ethylene block copolymer in an amount of 300 to 2,000 ppm and has (a) a melt flow rate of 10 to 18 g/10 min when measured at 230° C. under a load of 2.16 kg (21.2N); (b) an ordinary temperature xylene insoluble having a stereoregularity index fraction of 98.9% or higher when measured by 13C-NMR; and (c) an ordinary temperature xylene soluble having a content of 22 to 28% by weight has a single component with respect to a relaxation time T1 measured by pulse NMR and satisfies the following formula (I): y≦0.0014x3−0.0897x2−1.0593x+231.6  (I) where x is an ethylene content (% by weight) measured by 13C-NMR and y is the relaxation time T1 (msec) measured by pulse NMR.
    • 可以以低成本制造具有足够的刚度和机械强度的丙烯 - 乙烯嵌段共聚物组合物,因为不需要用于混合其它橡胶组分的附加步骤。 该组合物含有与丙烯 - 乙烯嵌段共聚物共混的亚甲基双(2,4-二叔丁基苯酚)酸式磷酸钠,其量为300至2000ppm,并且(a)熔体流动速率为10至18g 在2.16kg(21.2N)的负荷下,在230℃下测定,为10分钟。 (b)通过13 C-NMR测定的立构规整度指数分数为98.9%以上的常温二甲苯不溶物; 和(c)相对于通过脉冲NMR测定的弛豫时间T1,具有22〜28重量%含量的常温二甲苯可溶物具有单一成分,满足下式(I):其中,x为乙烯含量( 重量%),通过13 C-NMR测量,y是通过脉冲NMR测量的弛豫时间T1(msec)。
    • 88. 发明授权
    • Connector
    • 连接器
    • US06692294B2
    • 2004-02-17
    • US10096467
    • 2002-03-12
    • Yutaka Kobayashi
    • Yutaka Kobayashi
    • H01R907
    • H01R12/79H01R12/775
    • A connector has a plug-side housing and a plurality of concave core holding grooves into which cores of shielded electric wires of a flat cable are inserted individually. The core holding grooves are deeper than the outer diameter of each core. The cores are inserted into the core wire-holding grooves. Thus even if the plug-side housing deforms, the cores remain accommodated in the core holding grooves. The housing also has a retainer-mounting opening into which a retainer can be mounted. The retainer retains each core by sandwiching the core between the retainer and the housing.
    • 连接器具有插头侧外壳和多个凹芯保持槽,扁平电缆的屏蔽电线的芯分别插入其中。 芯部保持槽比每个芯的外径更深。 芯部插入到芯线保持槽中。 因此,即使插头侧壳体变形,芯部保持容纳在芯保持槽中。 壳体还具有保持器安装开口,保持器可以安装在该开口中。 保持器通过将芯夹在保持器和壳体之间来保持每个芯。
    • 89. 发明授权
    • Austenite stainless steel
    • 奥氏体不锈钢
    • US5858129A
    • 1999-01-12
    • US903103
    • 1997-07-30
    • Yutaka KobayashiTakeya TogeYoshito Fujiwara
    • Yutaka KobayashiTakeya TogeYoshito Fujiwara
    • C22C38/00C22C30/00C22C38/54C22C38/38
    • C22C30/00
    • Disclosed is an austenite stainless steel comprising: no more than 0.05% by weight of C; no more than 0.25% by weight of Si; no more than 0.40% by weight of Mn; no more than 0.040% by weight of P; no more than 0.003% by weight of S; 30.0 to 40.0% by weight of Ni; 20.0 to 26.0% by weight of Cr; 5.0 to 8.0% by weight of Mo; no more than 0.1% by weight of Al; 0.001 to 0.010% by weight of B; 0.15 to 0.30% by weight of N; and balance of Fe and inevitable impurity. The austenite stainless steel satisfying formula (1) and (2) mentioned below (wherein "Cr", "Mo", "N", "Si" and "Mn" mean content of each element).Cr+3.3Mo+20N.gtoreq.51 (1)5Si+Mn
    • 公开了一种奥氏体不锈钢,其包含:不超过0.05重量%的C; 不超过0.25重量%的Si; 不超过0.40重量%的Mn; 不超过0.040重量%的P; 不超过0.003%的S; 30.0〜40.0重量%的Ni; 20.0〜26.0重量%的Cr; 5.0〜8.0重量%的Mo; 不超过0.1重量%的Al; 0.001〜0.010重量%的B; 0.15〜0.30重量%的N; 并且Fe和不可避免的杂质的平衡。 满足下述式(1)和(2)的奥氏体不锈钢(其中“Cr”,“Mo”,“N”,“Si”和“Mn”表示各元素的含量)Cr + 3.3Mo + 20N> / = 51(1)5Si + Mn <32-(Cr + Mo)(2)
    • 90. 发明授权
    • SRAM having load transistor formed above driver transistor
    • 具有形成在驱动晶体管上方的负载晶体管的SRAM
    • US5834851A
    • 1998-11-10
    • US460641
    • 1995-06-02
    • Shuji IkedaSatoshi MeguroSoichiro HashibaIsamu KuramotoAtsuyoshi KoikeKatsuro SasakiKoichiro IshibashiToshiaki YamanakaNaotaka HashimotoNobuyuki MoriwakiShigeru TakahashiAtsushi HiraishiYutaka KobayashiSeigou Yukutake
    • Shuji IkedaSatoshi MeguroSoichiro HashibaIsamu KuramotoAtsuyoshi KoikeKatsuro SasakiKoichiro IshibashiToshiaki YamanakaNaotaka HashimotoNobuyuki MoriwakiShigeru TakahashiAtsushi HiraishiYutaka KobayashiSeigou Yukutake
    • H01L27/11
    • H01L27/11H01L27/1104Y10S257/903Y10S257/904
    • Herein disclosed is a semiconductor integrated circuit device comprising a SRAM having its memory cell composed of transfer MISFETs to be controlled through word lines and drive MISFETs. The gate electrodes of the drive MISFETs and the gate electrodes of the transfer MISFETs of the memory cell, and the word lines are individually formed of different conductive layers. The drive MISFETs and the transfer MISFETs are individually arranged to cross each other in the gate length direction. The word lines are extended in the gate length direction of the gate electrodes of the drive MISFETs and caused to cross the gate electrodes of the drive MISFETs partially. The two transfer MISFETs of the memory cell have their individual gate electrodes connected with two respective word lines spaced from each other and extended in an identical direction. The region defined by the two word lines is arranged therein with the two drive MISFETs and the source lines.The source line is formed of a conductive layer identical to that of the word line. The individual data lines of the complementary data line are formed of an identical conductive layer which is different from that of the word line and the source line. The identical conductive layer between the word line and source line and the complementary data line is formed with two word lines: a main word line extended in the first direction identical to that of the word line and source line and used by adopting the divided word line system: and a sub-word line used by adopting the double word line system.
    • 这里公开了一种半导体集成电路器件,其包括具有其存储单元的SRAM,SRAM由通过字线控制的转移MISFET和驱动MISFET构成。 驱动MISFET的栅电极和存储单元的转移MISFET的栅电极和字线分别由不同的导电层形成。 驱动MISFET和转移MISFET分别布置成在栅极长度方向上彼此交叉。 字线在驱动MISFET的栅电极的栅极长度方向上延伸,并且部分地与驱动MISFET的栅电极交叉。 存储器单元的两个转移MISFET的各自的栅极电极与彼此间隔开并沿相同方向延伸的两个相应字线连接。 由两个字线限定的区域配置有两个驱动MISFET和源极线。 源极线由与字线的导电层相同的导电层形成。 互补数据线的各个数据线由与字线和源极线不同的导电层形成。 字线和源极线与互补数据线之间的相同的导电层由两条字线形成:主字线在第一方向上延伸,与字线和源极线相同,并通过采用分割字线 系统:采用双字线系统使用的子字线。