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    • 82. 发明申请
    • REPRODUCING APPARATUS AND REPRODUCING METHOD
    • 再现设备和再现方法
    • US20120147725A1
    • 2012-06-14
    • US13309088
    • 2011-12-01
    • Daisuke UedaKimihiro SaitoHirotaka Miyamoto
    • Daisuke UedaKimihiro SaitoHirotaka Miyamoto
    • G11B7/1374G11B7/127
    • G11B7/083G11B7/00772G11B7/0908G11B7/0938G11B2007/0009
    • A reproducing apparatus includes: a first laser irradiation section irradiating an optical recording medium having a bulk recording layer and recording marks formed by focusing a laser beam on each predetermined layer position in the recording layer, with a first laser beam through an objective lens; a focus position adjusting section adjusting a focus position of the first laser beam; a beam receiving section receiving a reflected beam of the first laser beam from the marks and generating a light receiving signal; a reproducing section reproducing information recorded with the marks based on the light receiving signal; and a control section performing control to allow the focus position in reproduction of the information to correspond to a position shifted by a certain distance to an upper layer side from a focus position of the laser beam in forming the mark at the layer positions as a reproducing object.
    • 一种再现装置,包括:第一激光照射部,照射具有体积记录层的光记录介质和通过将激光束聚焦在记录层中的每个预定层位置而形成的记录标记,第一激光束通过物镜; 调整第一激光束的聚焦位置的对焦位置调整部; 光束接收部分,从所述标记接收所述第一激光束的反射光束并产生光接收信号; 再现部分,根据光接收信号再现记录有标记的信息; 以及控制部,其执行控制,以使得所述信息的再现中的所述焦点位置对应于在形成所述层位置处的标记时作为再现的从形成所述标记的所述激光束的焦点位置向上层侧偏移一定距离的位置 目的。
    • 83. 发明授权
    • Nitride semiconductor laser diode
    • 氮化物半导体激光二极管
    • US07974322B2
    • 2011-07-05
    • US12686839
    • 2010-01-13
    • Tetsuzo UedaDaisuke Ueda
    • Tetsuzo UedaDaisuke Ueda
    • H01S5/00
    • H01S5/32341H01S5/021H01S5/2201
    • A nitride semiconductor laser device includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor laminate that includes a plurality of semiconductor layers formed on the substrate and includes a multiple quantum well active layer, each of the plurality of semiconductor layers being made of group III-V nitride. The semiconductor laminate has a plane parallel to a {011} plane which is a plane orientation of silicon as a cleavage face and the cleavage face constructs a facet mirror.
    • 氮化物半导体激光器件包括:由主表面的平面取向为{100}面的硅制成的衬底; 以及半导体层叠体,其具有形成在所述基板上的多个半导体层,所述半导体层叠体具有多量子阱活性层,所述多个半导体层中的每一个均由III-V族氮化物构成。 半导体层叠体具有与{011}平面平行的平面,其是作为解理面的硅的平面取向,并且切割面构成小平面镜。
    • 85. 发明授权
    • Radar apparatus, method for controlling the same, and vehicle including the same
    • 雷达装置,其控制方法以及包括该雷达装置的车辆
    • US07817081B2
    • 2010-10-19
    • US12207123
    • 2008-09-09
    • Kenichi InoueDaisuke Ueda
    • Kenichi InoueDaisuke Ueda
    • G01S13/00G01S13/58G01S13/08H04B1/00H04K1/10H04L27/10H03D3/00
    • G01S13/931G01S13/325G01S2013/9375G01S2013/9378G01S2013/9385
    • Provided is a radar apparatus that detects an object, and includes: an oscillating unit for generating carrier waves; first and second transmission units for spreading the carrier waves, respectively using a first pseudo-random code and a second pseudo-random code different from the first pseudo-random code; a first transmission antenna for transmitting the carrier waves spread by the first transmission unit; a second transmission antenna for transmitting the carrier waves spread by the second transmission unit and have a directional characteristic different from that of the carrier waves transmitted by the first transmission antenna; a reception antenna for receiving reflected waves that are the carrier waves that have been transmitted by the first and second transmission antennas and have been reflected from the object; and a reception unit for despreading the reflected waves, using the first pseudo-random code and despreading the reflected waves, using the second pseudo-random code.
    • 提供一种检测物体的雷达装置,包括:用于产生载波的振荡单元; 分别使用与第一伪随机码不同的第一伪随机码和第二伪随机码扩展载波的第一和第二传输单元; 第一发送天线,用于发送由第一发送单元扩展的载波; 第二发送天线,用于发送由第二发送单元扩展的载波,并且具有与由第一发送天线发送的载波的方向特性不同的方向特性; 接收天线,用于接收作为由第一和第二发送天线发送并已从物体反射的载波的反射波; 以及接收单元,用于使用第一伪随机码解扩反射波,并使用第二伪随机码解扩反射波。
    • 86. 发明申请
    • Workpiece processing attachment and sewing machine
    • 工件加工附件和缝纫机
    • US20100212562A1
    • 2010-08-26
    • US12656237
    • 2010-01-21
    • Akifumi NakashimaDaisuke Ueda
    • Akifumi NakashimaDaisuke Ueda
    • D05B23/00D05B21/00D05B69/00D05B29/00
    • D05B55/06D05B23/00D05D2303/00
    • A workpiece processing attachment detachably attached to a sewing machine including a presser foot, a presser bar having the presser foot detachably attached to its lower end, a presser bar vertically moving mechanism, a sewing needle, a needle clamp having the sewing needle detachably attached thereto, a needle bar having the needle clamp attached thereto, and a needle bar vertically moving mechanism, the workpiece processing attachment, including a body detachably attached to the lower end of the presser bar; a connecting element capable of being connected to the needle clamp and movable up and down with the needle bar being moved up and down by the needle bar vertically moving mechanism; a needle penetrating the workpiece to form a hole in the workpiece; and a needle vertically moving mechanism moving the needle up and down by the up and down movement of the connecting element.
    • 一种可拆卸地安装在缝纫机上的工件加工附件,该缝纫机包括压脚,压脚可拆卸地安装在其下端,压杆垂直移动机构,缝纫针,具有可拆卸地连接到其上的缝纫针的针夹 具有附接有针夹的针杆和针杆上下移动机构,所述工件加工附件包括可拆卸地附接到所述按压杆的下端的主体; 连接元件,其能够连接到针夹并且可通过针杆上下移动机构上下移动而上下移动; 针穿过工件在工件上形成一个孔; 并且针垂直移动机构通过连接元件的上下移动来上下移动针。
    • 90. 发明授权
    • Via hole machining for microwave monolithic integrated circuits
    • 微波单片集成电路的通孔加工
    • US07674719B2
    • 2010-03-09
    • US11194419
    • 2005-08-01
    • Ming LiXinbing LiuHiroyuki SakaiMasaaki NishijimaDaisuke Ueda
    • Ming LiXinbing LiuHiroyuki SakaiMasaaki NishijimaDaisuke Ueda
    • H01L21/302
    • B23K26/0624B23K26/40B23K2103/50
    • A method for forming a via in a sapphire substrate with a laser machining system that includes an ultrafast pulsed laser source. The sapphire substrate is provided. Pulses of laser light are substantially focused to a beam spot on the first surface of the sapphire substrate such that each focused pulse of laser light ablates a volume of the sapphire substrate having a depth less than the substrate thickness. The beam spot of the focused laser light pulses is scanned over a via portion of the first surface of the sapphire substrate. The sapphire substrate is moved in a direction substantially normal to the first surface to control the volume of the sapphire substrate ablated by each pulse of laser light to be substantially constant. The pulsing and scanning steps are repeated until the via is formed extending from the first surface to the second surface of the sapphire substrate.
    • 一种在具有包括超快脉冲激光源的激光加工系统的蓝宝石衬底中形成通孔的方法。 提供蓝宝石衬底。 激光的脉冲基本上聚焦到蓝宝石衬底的第一表面上的束斑上,使得每个聚焦的激光脉冲消除了具有小于衬底厚度的深度的蓝宝石衬底的体积。 聚焦激光脉冲的束斑在蓝宝石衬底的第一表面的通孔部分上扫描。 蓝宝石衬底沿着基本上垂直于第一表面的方向移动,以控制由每个激光脉冲消融的蓝宝石衬底的体积基本恒定。 重复脉冲和扫描步骤,直到形成从蓝宝石衬底的第一表面延伸到第二表面的通孔。