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    • 83. 发明授权
    • Liquid crystal display device
    • 液晶显示装置
    • US07595781B2
    • 2009-09-29
    • US11314127
    • 2005-12-21
    • Masanori TakeuchiNobuyoshi NagashimaNaofumi Kondo
    • Masanori TakeuchiNobuyoshi NagashimaNaofumi Kondo
    • G09G3/36
    • G02F1/136213G02F2001/134345G09G3/3614G09G3/3648G09G2300/0443G09G2300/0447G09G2300/0876G09G2320/028
    • In an active-matrix liquid crystal display device, each of multiple pixels includes a first sub-pixel and a second sub-pixel, through which different voltages are applicable to a portion of the liquid crystal layer. Each of the first and second sub-pixels includes a liquid crystal capacitor defined by a counter electrode and a sub-pixel electrode that faces the counter electrode by way of the liquid crystal layer, and a storage capacitor defined by a storage capacitor electrode, an insulating layer, and a storage capacitor counter electrode. The storage capacitor electrode is electrically connected to the sub-pixel electrode, and the storage capacitor counter electrode faces the storage capacitor electrode by way of the insulating layer. The counter electrode is shared by the first and second sub-pixels and the storage capacitor counter electrodes of the first and second sub-pixels are electrically independent of each other.
    • 在有源矩阵液晶显示装置中,多个像素中的每一个包括第一子像素和第二子像素,通过该像素,不同的电压可应用于液晶层的一部分。 第一子像素和第二子像素中的每一个包括由液晶层面对反电极的对置电极和子像素电极限定的液晶电容器和由保持电容电极限定的存储电容器 绝缘层和存储电容器对电极。 辅助电容电极与子像素电极电连接,辅助电容对置电极通过绝缘层与辅助电容电极相对。 对置电极由第一和第二子像素共享,并且第一和第二子像素的存储电容器对电极彼此电独立。
    • 84. 发明申请
    • ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, AND TELEVISION RECEIVER
    • 主动矩阵基板,显示设备和电视接收器
    • US20090091676A1
    • 2009-04-09
    • US12279029
    • 2006-11-14
    • Masanori TakeuchiToshihide Tsubata
    • Masanori TakeuchiToshihide Tsubata
    • H01L27/12G02F1/1368
    • G02F1/136227G02F1/136204G02F1/136213
    • An active matrix substrate including, in each pixel area, a transistor, a pixel electrode (17), a conductive member (18) functioning as one of electrodes of a storage capacitor, a drain lead-out (7) electrode connected to a drain electrode of the transistor, and overlapping with the conductive member (18), and a contact hole for connecting the drain lead-out electrode (7) to the pixel electrode (17), includes a gate insulating film (40) covering a gate electrode of each transistor, the gate insulating film including a first thickness portion (41) overlapping with at least part of the contact hole, and a second thickness portion (42) formed adjacent to the first thickness portion, and overlapping with the drain lead-out electrode, the first thickness portion (41) having a greater thickness than the second thickness portion (42). This makes it possible to provide the active matrix substrate in which a short-circuit between the conductive member functioning as one of the electrodes of the storage capacitor, and the drain lead-out electrode (or the pixel electrode) is successfully prevented.
    • 一种有源矩阵基板,在每个像素区域中包括晶体管,像素电极(17),用作存储电容器的电极之一的导电构件(18),连接到漏极的漏极引出(7)电极 电极,与导电构件(18)重叠,并且用于将漏极引出电极(7)连接到像素电极(17)的接触孔包括覆盖栅极电极(40)的栅极绝缘膜(40) 所述栅极绝缘膜包括与所述接触孔的至少一部分重叠的第一厚度部分(41)和与所述第一厚度部分相邻形成的第二厚度部分(42),并且与所述漏极引出区重叠 电极,第一厚度部分(41)的厚度大于第二厚度部分(42)。 这使得可以提供有源矩阵基板,其中成功地防止了用作存储电容器的电极之一的导电部件和漏极引出电极(或像素电极)之间的短路。
    • 85. 发明申请
    • ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, TELEVISION RECEIVER, MANUFACTURING METHOD OF ACTIVE MATRIX SUBSTRATE, FORMING METHOD OF GATE INSULATING FILM
    • 主动矩阵基板,显示装置,电视接收机,主动矩阵基板的制造方法,门绝缘膜形成方法
    • US20090057682A1
    • 2009-03-05
    • US12162042
    • 2006-11-07
    • Toshihide TsubataMasanori Takeuchi
    • Toshihide TsubataMasanori Takeuchi
    • H01L33/00H01L21/28
    • H01L27/12H01L27/124H01L27/1248H01L29/41733H01L29/42384H01L29/66765H01L29/78696
    • In an active matrix substrate of the present invention, a gate insulating film for covering a gate electrode of each transistor has a thin portion, having a reduced film thickness, which is provided on a part overlapped on the gate electrode, and the thin portion is formed by using the gate electrode, on which the thin portion is overlapped, as a mask, and each transistor has a first drain electrode section and a second drain electrode section which are respectively provided on both sides of a source electrode, and the thin portion has two edges opposite to each other, and the first drain electrode section is overlapped on the one edge, and the second drain electrode section is overlapped on the other edge. This makes it possible to provide an active matrix substrate which realizes high display quality while suppressing unevenness of parasitic capacitances (particularly, Cgd) of TFTs in the active matrix substrate whose each TFT has a thin portion in its gate insulating film.
    • 在本发明的有源矩阵基板中,用于覆盖每个晶体管的栅电极的栅极绝缘膜具有设置在与栅电极重叠的部分上的膜厚减小的薄部分,薄部分是 通过使用其上重叠有薄层部分的栅电极作为掩模形成,并且每个晶体管具有分别设置在源电极两侧的第一漏电极部分和第二漏电极部分,并且薄部分 具有彼此相对的两个边缘,并且第一漏电极部分在一个边缘上重叠,并且第二漏电极部分在另一个边缘上重叠。 这使得可以提供实现高显示质量的有源矩阵基板,同时抑制每个TFT在其栅极绝缘膜中具有薄部分的有源矩阵基板中的TFT的寄生电容(特别是Cgd)的不均匀性。