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81. 发明授权

US07830606B2 Optical device and crystallization device 失效
标题翻译：光学装置和结晶装置
公开(公告)号：US07830606B2
公开(公告)日：2010-11-09
申请号：US12509269
申请日：2009-07-24
申请人： Takashi Ono , Kazufumi Azuma , Masakiyo Matsumura
发明人： Takashi Ono , Kazufumi Azuma , Masakiyo Matsumura
IPC分类号： G02B27/10
CPC分类号： G02B3/005 , G02B3/0062 , G02B3/06 , G02B27/0927 , G02B27/0961
摘要： An optical device comprises a first cylindrical lens array in which a plurality of first lens segments each having a first radius of curvature and a first width so as to divide laser light into a plurality of light components are arranged, and a plurality of second lens segments each having a second radius of curvature and a second width, and provided in at least one position of the first cylindrical lens array so as to be arranged between adjacent first lens segments.
摘要翻译：光学装置包括：第一柱面透镜阵列，其中多个第一透镜段各自具有第一曲率半径和第一宽度以将激光分成多个光分量，并且多个第二透镜段每个具有第二曲率半径和第二宽度，并且设置在第一柱面透镜阵列的至少一个位置，以便布置在相邻的第一透镜段之间。

82. 发明授权

US07485505B2 Thin-film transistor, method for manufacturing thin-film transistor, and display using thin-film transistors 失效
标题翻译：薄膜晶体管，薄膜晶体管的制造方法以及使用薄膜晶体管的显示器
公开(公告)号：US07485505B2
公开(公告)日：2009-02-03
申请号：US11855755
申请日：2007-09-14
申请人： Yoshiaki Nakazaki , Genshiro Kawachi , Terunori Warabisako , Masakiyo Matsumura
发明人： Yoshiaki Nakazaki , Genshiro Kawachi , Terunori Warabisako , Masakiyo Matsumura
IPC分类号： H01L21/84
CPC分类号： H01L21/02675 , H01L21/2026 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.
摘要翻译：本发明提供了提供更高电子（或空穴）迁移率的薄膜晶体管，薄膜晶体管的制造方法和使用该薄膜晶体管的显示器。本发明提供一种具有在水平方向上生长的晶体的半导体薄膜中的源极区，沟道区和漏极区的薄膜晶体管，该薄膜晶体管具有栅极绝缘膜和栅电极在沟道区域上形成漏极区的与沟道区相邻的漏极边缘在晶体生长终点附近。

83. 发明授权

US07118946B2 Thin film transistor, circuit device and liquid crystal display 有权
标题翻译：薄膜晶体管，电路器件和液晶显示器
公开(公告)号：US07118946B2
公开(公告)日：2006-10-10
申请号：US10508818
申请日：2003-03-04
申请人： Masato Hiramatsu , Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Yoshitaka Yamamoto
发明人： Masato Hiramatsu , Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Yoshitaka Yamamoto
IPC分类号： H01L21/00
CPC分类号： H01L29/78696 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78618 , H01L29/78675
摘要： A thin film transistor includes a one conductive type semiconductor layer; a source region and a drain region which are separately provided in the semiconductor layer; and a gate electrode provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width of the junction face between the source region and the channel which is provided between the source region and drain region, is different from the width of the junction face between the above channel region and the drain region.
摘要翻译：薄膜晶体管包括一个导电型半导体层; 源极区和漏极区，分别设置在半导体层中; 以及设置在所述半导体层的上方或下方的绝缘膜的栅电极，其中，所述源极区域与设置在所述源极区域与漏极区域之间的所述沟道的接合面的宽度不同于在上述沟道区域和漏极区域之间的接合面。

84. 发明申请

US20090061603A1 METHOD OF CRYSTALLIZING SEMICONDUCTOR FILM 有权
标题翻译：晶体管半导体膜的结晶方法
公开(公告)号：US20090061603A1
公开(公告)日：2009-03-05
申请号：US12202651
申请日：2008-09-02
申请人： Shigeyuki SHIMOTO , Takashi Ono , Kazufumi Azuma , Masakiyo Matsumura
发明人： Shigeyuki SHIMOTO , Takashi Ono , Kazufumi Azuma , Masakiyo Matsumura
IPC分类号： H01L21/20
CPC分类号： B23K26/073 , B23K26/0608 , B23K26/0676 , H01L21/02532 , H01L21/02686 , Y10T117/1004
摘要： A method of crystallizing a semiconductor film including splitting a pulse laser beam oscillated from a laser oscillator, and synthesizing the split pulse laser beams after the split pulse laser beams have propagated through optical paths different in optical path length, modulating the synthesized pulse laser beam into a pulse laser beam by a phase modulating element, and irradiating a non-single-crystal film formed on a substrate with the laser beam to crystallize the non-single-crystal film. Splitting the pulse laser beam and synthesizing the split pulse laser beams are performed using at least three optical splitting/synthesizing units arranged in order, and include sequentially splitting one pulse laser beam split by one optical splitting/synthesizing unit by succeeding splitting/synthesizing unit, and synthesizing the other pulse laser beam split by one optical splitting/synthesizing unit with the other pulse laser beam split by preceding splitting/synthesizing unit.
摘要翻译：一种结晶半导体膜的方法，包括分离从激光振荡器振荡的脉冲激光束，并且在分离脉冲激光束已经通过光路长度不同的光路传播之后合成分割脉冲激光束，将合成脉冲激光束调制成通过相位调制元件的脉冲激光束，用激光束照射形成在基板上的非单晶膜，使非单晶膜结晶化。使用至少三个顺序排列的光分裂/合成单元执行脉冲激光束的分离和合成分割脉冲激光束，并且包括通过后续的分割/合成单元顺序地分割由一个光分解/合成单元分割的一个脉冲激光束，并且将由一个光分解/合成单元分离的另一个脉冲激光束与由前面的分割/合成单元分离的另一个脉冲激光束合成。

85. 发明授权

US07407873B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07407873B2
公开(公告)日：2008-08-05
申请号：US11187850
申请日：2005-07-25
申请人： Hiroki Nakamura , Terunori Warabisako , Masakiyo Matsumura
发明人： Hiroki Nakamura , Terunori Warabisako , Masakiyo Matsumura
IPC分类号： H01L21/20
CPC分类号： H01L21/324 , H01L21/0237 , H01L21/0242 , H01L21/02488 , H01L21/02529 , H01L21/02532 , H01L21/02667 , H01L21/0268 , H01L21/02686 , H01L21/268
摘要： A method of manufacturing a semiconductor device includes irradiating a region to be crystallized of a non-monocrystalline semiconductor film with laser beam modulated by an optical modulator to have light intensity distribution having a minimum light intensity line or minimum light intensity spot to crystallize the region, and heating the crystallized region by irradiating light from a flash lamp onto the crystallized region.
摘要翻译：一种制造半导体器件的方法包括用由光学调制器调制的激光束照射非单晶半导体膜结晶区域，以具有具有最小光强度线或最小光强度点的光强度分布，以使该区域结晶，并通过将来自闪光灯的光照射到结晶区域来加热结晶区域。

86. 发明授权

US07352002B2 Semiconductor device including semiconductor thin films having different crystallinity, substrate of the same, and manufacturing method of the same, and liquid crystal display and manufacturing method of the same 有权
标题翻译：包括具有不同结晶度的半导体薄膜的半导体器件及其制造方法及其制造方法及其制造方法
公开(公告)号：US07352002B2
公开(公告)日：2008-04-01
申请号：US11403938
申请日：2006-04-14
申请人： Yoshinobu Kimura , Masakiyo Matsumura , Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Fumiki Nakano
发明人： Yoshinobu Kimura , Masakiyo Matsumura , Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Fumiki Nakano
IPC分类号： H01L29/04
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L29/66757 , H01L29/78675
摘要： A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.
摘要翻译：制造薄膜半导体器件衬底的方法包括在基底层上形成非单晶半导体薄膜的步骤和用能量束照射非单晶半导体薄膜以提高结晶度的退火步骤构成非单晶半导体薄膜的非单晶半导体。退火步骤包括同时用多个能量束照射非单晶半导体薄膜，以形成多个单位区域，每个单位区域包括至少一个被能量束照射的照射区域和至少一个不照射的非照射区域用能量束照射。

87. 发明授权

US07335910B2 Thin film transistor, semiconductor device, display, crystallization method, and method of manufacturing thin film transistor 有权
标题翻译：薄膜晶体管，半导体器件，显示器，结晶方法和制造薄膜晶体管的方法
公开(公告)号：US07335910B2
公开(公告)日：2008-02-26
申请号：US11432387
申请日：2006-05-12
申请人： Tomoya Kato , Masakiyo Matsumura , Yoshiaki Nakazaki
发明人： Tomoya Kato , Masakiyo Matsumura , Yoshiaki Nakazaki
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L29/00
CPC分类号： H01L29/78621 , H01L29/04 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thickness of less than 50 nm and disposed on an insulating substrate is irradiated with laser light having an inverse-peak-patterned light intensity distribution to grow crystals unidirectionally in a lateral direction. Thus, band-like crystal grains having a dimension in a crystal growth direction, which is longer than a width, are arranged adjacent to each other in a width direction to form a crystal grain array. A source region and a drain region of a TFT are formed so that a current flows in the crystal growth direction in an area including a plurality of crystal grains of this crystal grain array.
摘要翻译：本发明的目的是提供一种具有高迁移率并具有较少的迁移率或阈值电压特性波动的薄膜晶体管。用具有反峰图案的光强度分布的激光照射厚度小于50nm并且设置在绝缘基板上的非单晶半导体薄膜，以在横向上单向生长晶体。因此，具有长于宽度的晶体生长方向的尺寸的带状晶粒沿宽度方向彼此相邻地布置以形成晶粒阵列。形成TFT的源极区域和漏极区域，使得电流在包含该晶体阵列的多个晶粒的区域中的晶体生长方向上流动。

88. 发明申请

US20070023759A1 THIN FILM TRANSISTOR, CIRCUIT APPARATUS AND LIQUID CRYSTAL DISPLAY 有权
标题翻译：薄膜晶体管，电路设备和液晶显示器
公开(公告)号：US20070023759A1
公开(公告)日：2007-02-01
申请号：US11469748
申请日：2006-09-01
申请人： Masato Hiramatsu , Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Yoshitaka Yamamoto
发明人： Masato Hiramatsu , Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Yoshitaka Yamamoto
IPC分类号： H01L29/00
CPC分类号： H01L29/78696 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78618 , H01L29/78675
摘要： A thin film transistor includes a one conductive type semiconductor layer (11); a source region (12) and a drain region (13) which are separately provided in the semiconductor layer; and a gate electrode (14) provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width (Ws) of the junction face between the source region and the channel (16) which is provided between the source region and drain region, is different from the width (Wd) of the junction face between the above channel region and the drain region.
摘要翻译：薄膜晶体管包括一个导电型半导体层（11）; 源区域（12）和漏极区域（13），其分开设置在所述半导体层中; 以及设置在所述半导体层的上方或下方的绝缘膜的栅极电极，其中，所述源极区域与所述沟道（16）之间的所述接合面的宽度（W SUB）设置在源极区域和漏极区域之间，不同于上述沟道区域和漏极区域之间的接合面的宽度（W SUB）。

89. 发明申请

US20060065644A1 Semiconductor device, method of measuring light intensity distribution of laser light, laser annealing apparatus, and crystallization method 审中-公开
标题翻译：半导体器件，测量激光的光强分布的方法，激光退火装置和结晶方法
公开(公告)号：US20060065644A1
公开(公告)日：2006-03-30
申请号：US11099563
申请日：2005-04-06
申请人： Masayuki Jyumonji , Masato Hiramatsu , Masakiyo Matsumura
发明人： Masayuki Jyumonji , Masato Hiramatsu , Masakiyo Matsumura
IPC分类号： B23K26/00
CPC分类号： H01L21/02675 , B23K26/702 , G01J1/429 , G01J1/58 , H01L21/2026
摘要： An amorphous silicon layer is deposited on a glass substrate via an underlayer insulating film, and further a light-emitting layer is inserted between the glass substrate and the underlayer insulating film in a partial region on the glass substrate. To measure light intensity distribution of laser light applied to the amorphous silicon layer, the laser light is applied to the light-emitting layer from the surface of a substrate to be treated. The light intensity distribution of the light emitted from the light-emitting layer is two-dimensionally imaged using an optical image pickup system from the back surface of the substrate to be treated, and measured using an image pickup device. The light intensity distribution of the laser light in the face to be treated is obtained from the light intensity distribution of the emission measured in this manner.
摘要翻译：通过下层绝缘膜在玻璃基板上沉积非晶硅层，并且在玻璃基板上的部分区域中，还在玻璃基板和下层绝缘膜之间插入发光层。为了测量施加到非晶硅层的激光的光强度分布，激光从待处理的基板的表面施加到发光层。从发光层发射的光的光强度分布使用光学图像拾取系统从待处理的基板的后表面二维成像，并使用图像拾取装置进行测量。从被处理面的激光的光强度分布是从这样测定的发光的光强度分布得到的。

90. 发明申请

US20050272184A1 Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device 失效
标题翻译：结晶方法，薄膜晶体管制造方法，薄膜晶体管和显示装置
公开(公告)号：US20050272184A1
公开(公告)日：2005-12-08
申请号：US11136371
申请日：2005-05-25
申请人： Masato Hiramatsu , Hiroyuki Ogawa , Masakiyo Matsumura
发明人： Masato Hiramatsu , Hiroyuki Ogawa , Masakiyo Matsumura
IPC分类号： B23K26/06 , H01L21/00 , H01L21/20 , H01L21/26 , H01L21/268 , H01L21/324 , H01L21/336 , H01L21/42 , H01L21/477 , H01L21/77 , H01L21/84
CPC分类号： H01L21/02686 , B23K26/066 , H01L21/0268 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/66757 , Y10T428/265
摘要： A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of irradiating the pulse laser beam onto a substrate to be crystallized for crystallization. The substrate to be crystallized is such that one or more silicon oxide films which present absorption properties to the laser beam and differ in the relative proportions of Si and O are provided on a laser beam incident face.
摘要翻译：使移相器将来自准分子激光单元的波长为248nm或300nm以上的激光束相位调制成激光束的结晶化方法，其具有横截面为多个倒三角形峰值图案的光强度分布并将脉冲激光束照射到待结晶的基板上以进行结晶。要结晶的衬底使得在激光束入射面上提供一个或多个对激光束具有吸收特性并且Si和O的相对比例不同的氧化硅膜。

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