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81. 发明申请

US20090231979A1 OPTICAL RECORDING MEDIUM 审中-公开
标题翻译：光学记录介质
公开(公告)号：US20090231979A1
公开(公告)日：2009-09-17
申请号：US12369548
申请日：2009-02-11
申请人： Rumiko HAYASE , Kazuki Matsumoto , Satoshi Mikoshiba , Norikatsu Sasao , Takahiro Kamikawa , Masahiro Kanamaru , Masaya Terai
发明人： Rumiko HAYASE , Kazuki Matsumoto , Satoshi Mikoshiba , Norikatsu Sasao , Takahiro Kamikawa , Masahiro Kanamaru , Masaya Terai
IPC分类号： G11B7/00 , G03F7/00
CPC分类号： G11B7/245 , G03F7/001 , G03F7/0045 , G03F7/027 , G03F7/038 , G11B7/24044 , G11B7/246 , G11B7/2472 , G11B7/2475
摘要： An optical recording medium is provided, which includes a recording layer includes a polymer matrix, a polymerizable compound, a photopolymerization initiator, and a polymerization inhibitor. The polymerization inhibitor is formed of a compound which exhibits a molar absorption coefficient of zero to a light having a first wavelength and generates an acid or a base when exposed to an external stimulus other than the light having the first wavelength, thereby inhibiting the polymerization of the polymerizable compound.
摘要翻译：提供了一种光学记录介质，其包括具有聚合物基质，可聚合化合物，光聚合引发剂和阻聚剂的记录层。聚合抑制剂由对具有第一波长的光显示摩尔吸光系数为零的化合物形成，并且当暴露于除了具有第一波长的光以外的外部刺激时产生酸或碱，从而抑制可聚合化合物。

82. 发明申请

US20090195847A1 HOLOGRAPHIC RECORDING MEDIUM 审中-公开
标题翻译：全息记录介质
公开(公告)号：US20090195847A1
公开(公告)日：2009-08-06
申请号：US12403548
申请日：2009-03-13
申请人： Satoshi MIKOSHIBA , Kazuki Matsumoto , Rumiko Hayase , Norikatsu Sasao , Takahiro Kamikawa , Masahiro Kanamaru
发明人： Satoshi MIKOSHIBA , Kazuki Matsumoto , Rumiko Hayase , Norikatsu Sasao , Takahiro Kamikawa , Masahiro Kanamaru
IPC分类号： G03H1/02 , G03F7/00
CPC分类号： G11B7/245 , G11B7/24044
摘要： A holographic recording medium is provided, which includes a recording layer containing a three-dimensional crosslinked polymer matrix, a photo-radical generating agent, and a ring-opening polymerizable compound having a radically ring-opening polymerizable alicyclic structure.
摘要翻译：提供一种全息记录介质，其包括含有三维交联聚合物基质，光激发生剂和具有自由基开环聚合脂环结构的开环聚合化合物的记录层。

83. 发明申请

US20060119565A1 Lighting device, flat-panel display device and lighting method 审中-公开
标题翻译：照明装置，平板显示装置及照明方式
公开(公告)号：US20060119565A1
公开(公告)日：2006-06-08
申请号：US11282650
申请日：2005-11-21
申请人： Kazuki Matsumoto
发明人： Kazuki Matsumoto
IPC分类号： G09G3/36
CPC分类号： G09G3/3406 , G09G2320/064
摘要： A lighting device is provided with a number of light sources and a driving circuit. Each of the light sources includes a plurality of light emitting elements which emit respective light having different wavelengths, combines the respective light into white light, and emit the white light onto a flat display panel. The driving circuit periodically drives the light sources in accordance with driving pattern signals each corresponding to the ratio between times for which the light emitting elements emit the respective light, and shifts the phases of the driving pattern signals relative to each other for the light sources.
摘要翻译：照明装置设置有多个光源和驱动电路。每个光源包括发射具有不同波长的各种光的多个发光元件，将各个光组合成白光，并将白光发射到平板显示面板上。驱动电路根据与发光元件发射各光的时间的比例对应的驱动图案信号周期性地驱动光源，并且使驱动图案信号的相位相对于光源偏移。

84. 发明授权

US06812123B2 Semiconductor devices and methods for manufacturing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06812123B2
公开(公告)日：2004-11-02
申请号：US09818743
申请日：2001-03-27
申请人： Kazuki Matsumoto , Yukio Morozumi , Michio Asahina
发明人： Kazuki Matsumoto , Yukio Morozumi , Michio Asahina
IPC分类号： H01L2144
CPC分类号： H01L24/48 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/45 , H01L2224/02126 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05082 , H01L2224/05083 , H01L2224/05157 , H01L2224/05166 , H01L2224/0517 , H01L2224/05179 , H01L2224/05187 , H01L2224/05624 , H01L2224/13099 , H01L2224/451 , H01L2224/48463 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/0104 , H01L2924/01041 , H01L2924/0105 , H01L2924/01074 , H01L2924/04941 , H01L2924/05341 , H01L2924/12043 , H01L2924/1305 , H01L2924/13091 , H01L2924/04953 , H01L2224/45099 , H01L2924/00
摘要： Certain embodiments of the present invention relate to a semiconductor device that has a pad section having an excellent coherency with an interlayer dielectric layer, and a method for manufacturing the same. A semiconductor device 1000 has a pad layer 30A formed over an interlayer dielectric layer 20. The interlayer dielectric layer 20 includes at least a first silicon oxide layer 20b that is formed by a polycondensation reaction of a silicon compound and hydrogen peroxide, and a second silicon oxide layer 20c formed over the first silicon oxide layer and containing an impurity. The pad section 30A includes a wetting layer 32, an alloy layer 34 and a metal wiring layer 37.
摘要翻译：本发明的某些实施例涉及一种半导体器件，其具有与层间介质层具有优异相干性的焊盘部分及其制造方法。半导体器件1000具有在层间电介质层20上形成的焊盘层30A。层间绝缘层20至少包括通过硅化合物和过氧化氢的缩聚反应形成的第一氧化硅层20b和第二硅氧化物层20c形成在第一氧化硅层上并含有杂质。焊盘部分30A包括润湿层32，合金层34和金属布线层37。

85. 发明授权

US06614119B1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06614119B1
公开(公告)日：2003-09-02
申请号：US09521771
申请日：2000-03-09
申请人： Michio Asahina , Junichi Takeuchi , Naohiro Moriya , Kazuki Matsumoto
发明人： Michio Asahina , Junichi Takeuchi , Naohiro Moriya , Kazuki Matsumoto
IPC分类号： H01L2940
CPC分类号： H01L21/76814 , H01L21/28518 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L21/76837 , H01L21/76843 , H01L21/76856 , H01L21/76876 , H01L21/76877
摘要： A semiconductor device having a contact structure that can exhibit superlative step coverage without causing voids or wiring discontinuities, using aluminum or aluminum alloys as a conductive substance for via-holes. A method of fabricating the semiconductor device comprises, for at least one layer of wiring regions above the first wiring region on a semiconductor substrate, the following steps (a) to (f): (a) a step of forming a via-hole in a second interlayer dielectric formed above the first wiring region on a semiconductor substrate; (b) a degassing step for removing gaseous components included within the interlayer dielectric by a heat treatment under reduced pressure and at the substrate temperature of 300° C. to 550° C.; (c) a step of forming a wetting layer on the surface of the interlayer dielectric and the via-hole; (d) a step of cooling the substrate to a temperature of no more than 100° C.; (e) a step of forming a first aluminum layer comprising one of aluminum and an alloy in which aluminum is the main component on the wetting layer at a temperature of no more than 200° C.; and (f) a step of forming a second aluminum layer comprising one of aluminum and an alloy in which aluminum is the main component on the first aluminum layer at a temperature of at least 300° C.
摘要翻译：一种具有接触结构的半导体器件，其可以显示出最高级的覆盖范围，而不引起空隙或接线不连续性，使用铝或铝合金作为通孔的导电物质。制造半导体器件的方法包括：对于在半导体衬底上的第一布线区域上方的布线区域中的至少一层的以下步骤（a）至（f）：（a）形成通孔的步骤形成在半导体衬底上的第一布线区域上方的第二层间电介质; （b）通过减压热处理和基板温度在300℃至550℃下除去层间电介质中包含的气体组分的脱气步骤; （c）在层间电介质和通孔的表面上形成润湿层的步骤; （d）将基板冷却至不超过100℃的温度; （e）在不超过200℃的温度下形成包含铝和合金中的铝的第一铝层的步骤，其中铝是润湿层上的主要成分; 以及（f）在至少300℃的温度下形成第一铝层的步骤，所述第二铝层包括铝和合金之一，其中铝是第一铝层上的主要成分。

86. 发明授权

US6144097A Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US6144097A
公开(公告)日：2000-11-07
申请号：US220590
申请日：1998-12-28
申请人： Michio Asahina , Junichi Takeuchi , Naohiro Moriya , Kazuki Matsumoto
发明人： Michio Asahina , Junichi Takeuchi , Naohiro Moriya , Kazuki Matsumoto
IPC分类号： H01L21/28 , H01L21/316 , H01L21/768 , H01L23/485 , H01L23/522 , H01L23/532 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76846 , H01L21/76843 , H01L23/485 , H01L23/53223 , H01L2924/0002 , Y10S438/927
摘要： A semiconductor device comprising a semiconductor substrate including an electronic element, interlayer dielectric (silicon oxide layer and BPSG layer) formed on the semiconductor substrate, a contact hole formed in the interlayer dielectric, a barrier layer formed on the interlayer dielectric and contact hole, and a wiring layer formed on the barrier layer. In the barrier layer, metal oxide (titanium oxide) are scattered in an island-like configuration. The barrier layer is formed by depositing a layer that is used to form the barrier layer and then introducing oxygen into the layer. The step is achieved by depositing a layer for the barrier layer, exposing the layer in oxygen plasma under reduced pressure, and subjecting the layer to the thermal processing, or, alternatively by depositing a layer for the barrier layer and subjecting the layer to thermal processing in an atmosphere of oxygen. The semiconductor device of the present invention has a barrier layer with excellent barrier properties.
摘要翻译：一种半导体器件，包括形成在半导体衬底上的电子元件，层间电介质（氧化硅层和BPSG层）的半导体衬底，形成在层间电介质中的接触孔，形成在层间电介质和接触孔上的阻挡层，以及形成在阻挡层上的布线层。在阻挡层中，金属氧化物（氧化钛）以岛状构造分散。阻挡层通过沉积用于形成阻挡层然后将氧引入层中的层而形成。该步骤通过沉积阻挡层的层，在减压下在氧等离子体中暴露层，并对该层进行热处理，或者通过沉积用于阻挡层的层并使该层进行热处理来实现在氧气氛中。本发明的半导体装置具有阻隔性优异的阻挡层。

87. 发明授权

US6137176A Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US6137176A
公开(公告)日：2000-10-24
申请号：US104403
申请日：1998-06-25
申请人： Yukio Morozumi , Michio Asahina , Naohiro Moriya , Kazuki Matsumoto , Eiji Suzuki
发明人： Yukio Morozumi , Michio Asahina , Naohiro Moriya , Kazuki Matsumoto , Eiji Suzuki
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/768 , H01L23/485 , H01L23/522 , H01L23/532 , H01L29/78 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76828 , H01L21/02129 , H01L21/02164 , H01L21/022 , H01L21/02203 , H01L21/02271 , H01L21/02274 , H01L21/31051 , H01L21/31625 , H01L21/76801 , H01L21/76804 , H01L21/76814 , H01L21/76819 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76843 , H01L21/76856 , H01L21/76864 , H01L21/76877 , H01L23/485 , H01L23/53223 , H01L23/5329 , H01L2924/0002
摘要： A process of forming an interlayer dielectric on a semiconductor substrate including an electronic element includes:forming first silicon oxide layer by reacting a silicon compound including hydrogen with hydrogen peroxide using a chemical vapor deposition method;forming a porous second silicon oxide layer by reacting between a compound including an impurity, silicon compounds, and at least one substance selected from oxygen and compounds including oxygen using a chemical vapor deposition method; andannealing at a temperature of 300.degree. C. to 850.degree. C. to make the first and second silicon oxide layers more fine-grained. The first silicon oxide layer is formed at a temperature that is lower than that required of a BPSG film, and it has superior self-flattening characteristics in itself.
摘要翻译：在包括电子元件的半导体衬底上形成层间电介质的工艺包括：通过化学气相沉积法使包括氢的硅化合物与过氧化氢反应形成第一氧化硅层; 通过使用化学气相沉积法在包括杂质，硅化合物和至少一种选自氧的化合物和包括氧的化合物中的化合物之间反应形成多孔的第二氧化硅层; 并在300℃至850℃的温度下进行退火，以使第一和第二氧化硅层更细粒度。第一氧化硅层形成在低于BPSG膜所要求的温度下，其本身具有优异的自扁平化特性。

88. 发明申请

US20180364620A1 DEVELOPING DEVICE, PROCESS CARTRIDGE, AND IMAGE FORMING APPARATUS 审中-公开
公开(公告)号：US20180364620A1
公开(公告)日：2018-12-20
申请号：US15968014
申请日：2018-05-01
申请人： Tomohiro Kubota , Naoki Nakatake , Minoru Toyoda , Kazuki Matsumoto , Kenji Nakamura
发明人： Tomohiro Kubota , Naoki Nakatake , Minoru Toyoda , Kazuki Matsumoto , Kenji Nakamura
IPC分类号： G03G15/08
摘要： A developing device is provided which includes: a developing roller in contact with or facing an image hearer; a supply roller to supply toner to the developing roller; a casing; a first conveyer disposed within the casing and above the supply roller to supply toner stored in the developing device to the supply roller, while forming a first conveyance path; a second conveyer disposed within the casing with an upper end thereof positioned below that of the first conveyer, while forming a second conveyance path forming a toner circulation path together with the first conveyance path; a partition wall separating the first conveyance path and the second conveyance path in a longitudinal direction within a range excluding both longitudinal end portions; and a toner supply port, at a ceiling of the casing above the second conveyance path, through which toner is supplied to an inside of the developing device.

89. 发明授权

US09772601B2 Image forming apparatus and process unit 有权
公开(公告)号：US09772601B2
公开(公告)日：2017-09-26
申请号：US15223189
申请日：2016-07-29
申请人： Mitsutoshi Kichise , Takeshi Yamashita , Kazuki Matsumoto , Emi Kita , Naoki Nakatake , Takeshi Sakashita , Takuya Akiyama
发明人： Mitsutoshi Kichise , Takeshi Yamashita , Kazuki Matsumoto , Emi Kita , Naoki Nakatake , Takeshi Sakashita , Takuya Akiyama
IPC分类号： G03G21/18 , G03G21/00 , G03G21/16
CPC分类号： G03G21/1814 , G03G21/0029 , G03G21/0076 , G03G21/1666 , G03G21/1821 , G03G2215/0402 , G03G2215/0404 , G03G2215/0407 , G03G2221/0015 , G03G2221/0026 , G03G2221/1636
摘要： A process unit includes a rotatable image bearer, an optical writing head to expose the image bearer within an maximum exposure range in an axial direction of the image bearer, a developer bearer, spacers disposed in axial end portions of the image bearer to determine a position of the optical writing head relative to the image bearer and slidingly contact the image bearer, a cleaner disposed downstream from the developer bearer in an image bearer rotation direction, and a remover to slidingly contact the axial end portion of the image bearer to remove a substance adhering thereto. In the axial direction, inner ends of the spacers are positioned inside a toner layer range of the developer bearer extending beyond a largest sheet width. The remover is disposed downstream from the cleaner and crossing a line extending from the inner end of the spacer perpendicularly to the axial direction.

90. 发明申请

US20110228663A1 HOLOGRAPHIC RECORDING METHOD 审中-公开
标题翻译：全景记录方法
公开(公告)号：US20110228663A1
公开(公告)日：2011-09-22
申请号：US12880828
申请日：2010-09-13
申请人： Masaya Terai , Kazuki Matsumoto , Rumiko Hayase , Yoshiaki Kawamonzen , Norikatsu Sasao , Masahiro Kanamaru
发明人： Masaya Terai , Kazuki Matsumoto , Rumiko Hayase , Yoshiaki Kawamonzen , Norikatsu Sasao , Masahiro Kanamaru
IPC分类号： G11B7/00
CPC分类号： G11B7/0065 , G11B7/083
摘要： A holographic recording method includes the following steps: irradiating an optical recording medium with a coherent reference beam and a coherent information beam to produce a hologram in the optical recording medium while irradiating the optical recording medium with an incoherent pretreatment beam to consume a polymerization inhibitor; irradiating the hologram with the reference beam to extract a reproduction beam while stopping irradiating the optical recording medium with the reference beam; sensing the signal beam with an image pick-up unit to detect an intensity of the signal beam; and calculating a bit error rate with a control unit to irradiate the hologram with the information beam if the bit error rate is larger than a prescribed value, or to stop irradiating the optical recording medium with the reference beam, the information beam and the pretreatment beam if the bit error rate is smaller than the prescribed value.
摘要翻译：全息记录方法包括以下步骤：用光学记录介质照射具有相干参考光束和相干信息光束的光学记录介质，以在光学记录介质中用不相干的预处理光束照射消耗阻聚剂; 用参考光束照射全息图以提取再现光束，同时停止用参考光束照射光学记录介质; 用图像拾取单元感测信号光束以检测信号光束的强度; 如果比特错误率大于规定值，则用控制单元计算与信息光束照射全息图的比特错误率，或停止用参考光束照射光学记录介质，信息光束和预处理光束如果误码率小于规定值。

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