专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明申请

US20080196761A1 Photovoltaic device and process for producing same 审中-公开
标题翻译：光伏器件及其制造方法
公开(公告)号：US20080196761A1
公开(公告)日：2008-08-21
申请号：US12003261
申请日：2007-12-21
申请人： Youji Nakano , Yoshiaki Takeuchi , Kengo Yamaguchi , Yasuhiro Yamauchi
发明人： Youji Nakano , Yoshiaki Takeuchi , Kengo Yamaguchi , Yasuhiro Yamauchi
IPC分类号： H01L31/028
CPC分类号： H01L31/077 , H01L31/0236 , H01L31/056 , H01L31/076 , H01L31/182 , H01L31/1884 , Y02E10/52 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device and a process for producing the photovoltaic device that combine a high photovoltaic conversion efficiency with a high level of productivity. The photovoltaic device includes at least a transparent electrode-bearing substrate, prepared by providing a transparent electrode layer on a transparent, electrically insulating substrate, and a photovoltaic layer containing mainly crystalline silicon-based semiconductors and a back electrode layer formed sequentially on the transparent electrode layer of the transparent electrode-bearing substrate, wherein the surface of the transparent electrode layer of the transparent electrode-bearing substrate has a shape that contains a mixture of coarse and fine roughness, and exhibits a spectral haze ratio of 20% or greater for wavelengths of from 550 nm to 800 nm, and the photovoltaic layer containing mainly crystalline silicon-based semiconductors has a film thickness of from 1.2 μm to 2 μm, and a Raman ratio of from 3.0 to 8.0.
摘要翻译：一种光电器件和用于生产光伏器件的方法，其结合了高的光电转换效率和高生产率。光电器件至少包括透明电极承载基板，其通过在透明电绝缘基板上提供透明电极层，以及主要包含晶体硅基半导体的光电层和在透明电极上依次形成的背电极层所述透明电极承载基板的所述透明电极承载基板的所述透明电极层的表面具有包含粗糙度和粗糙度的混合物的形状，并且对于波长具有20％以上的光谱雾度比并且主要含有结晶硅系半导体的光电转换层的膜厚为1.2〜2μm，拉曼比为3.0〜8.0。

82. 发明申请

US20070148541A1 BATTERY 有权
标题翻译：电池
公开(公告)号：US20070148541A1
公开(公告)日：2007-06-28
申请号：US11567951
申请日：2006-12-07
申请人： Shinya Wakita , Izaya Okae , Yosuke Ushio , Yoshiaki Takeuchi , Saori Tokuoka
发明人： Shinya Wakita , Izaya Okae , Yosuke Ushio , Yoshiaki Takeuchi , Saori Tokuoka
IPC分类号： H01M10/40
CPC分类号： H01M10/0569 , H01M10/0587 , H01M2004/021 , H01M2010/4292
摘要： A battery capable of obtaining a high energy density and obtaining superior cycle characteristics is provided. The thickness of a cathode active material layer is from 100 μm to 130 μm. The thickness of an anode active material layer is from 85 μm to 120 μm, and the volume density of the anode active material layer is from 1.7 g/cm3 to 1.85 g/cm3. An electrolytic solution contains 4-fluoro-1,3-dioxolane-2-one. Thereby, even when the thicknesses of the cathode active material layer and the anode active material layer are increased, the diffusion and acceptance of lithium in an anode are improved, and superior cycle characteristics can be obtained.
摘要翻译：提供能够获得高能量密度并获得优异的循环特性的电池。阴极活性物质层的厚度为100〜130μm。阳极活性物质层的厚度为85μm〜120μm，负极活性物质层的体积密度为1.7g / cm 3〜1.85g / cm 3， / SUP>。电解液含有4-氟-1,3-二氧戊环-2-酮。由此，即使阴极活性物质层和负极活性物质层的厚度增加，也能够提高阳极中的锂的扩散和接受性，能够获得优异的循环特性。

83. 发明申请

US20070021292A1 Fine a-alumina particle 失效
标题翻译：细的氧化铝颗粒
公开(公告)号：US20070021292A1
公开(公告)日：2007-01-25
申请号：US11490023
申请日：2006-07-21
申请人： Hajime Maki , Yoshiaki Takeuchi
发明人： Hajime Maki , Yoshiaki Takeuchi
IPC分类号： C04B35/00 , C08F4/02
CPC分类号： C01F7/02 , C01F7/023 , C01P2002/74 , C01P2006/10 , C01P2006/80 , C04B35/111 , C04B35/6261 , C04B35/6268 , C04B2235/3206 , C04B2235/5409 , C04B2235/5436 , C04B2235/604 , C04B2235/6562 , C04B2235/72 , C04B2235/77 , C09K3/1463
摘要： The present invention provides a fine α-alumina particle having a degree of α-transformation of not less than 95%, a BET specific surface area of not less than 10 m2/g, a degree of necking of not more than 30%, and a total content of Si, Fe, Cu, Na and Mg of not more than 500 ppm.
摘要翻译：本发明提供α-相变度不小于95％，BET比表面积不小于10m 2 / g的精细α-氧化铝颗粒，缩颈度不大于30％，Si，Fe，Cu，Na和Mg的总含量不大于500ppm。

84. 发明申请

US20060210799A1 Process for producing fine alpha-alumina particles 失效
标题翻译：生产精细α-氧化铝颗粒的方法
公开(公告)号：US20060210799A1
公开(公告)日：2006-09-21
申请号：US11374968
申请日：2006-03-15
申请人： Hajime Maki , Yoshiaki Takeuchi , Yuzuru Saitou
发明人： Hajime Maki , Yoshiaki Takeuchi , Yuzuru Saitou
IPC分类号： B32B5/16 , D04H1/00
CPC分类号： C01F7/02 , B82Y30/00 , C01F7/306 , C01F7/308 , C01F7/36 , C01P2004/04 , C01P2004/52 , C01P2004/64 , C01P2006/12 , C04B35/10 , C04B35/101 , C04B35/111 , C04B2235/3217 , C04B2235/781 , C04B2235/783 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996 , Y10T428/2998
摘要： The present invention provides a process for producing fine α-alumina particles, which comprises sintering a mixture of α-alumina precursor particles and seed crystal particles, wherein a center particle diameter of the seed crystal particles is 40 nm or less, and a ratio of the number of coarse particles having a particle diameter greater than 100 nm to the number of the total particles is 1% or less.
摘要翻译：本发明提供一种生产精细α-氧化铝颗粒的方法，其包括烧结α-氧化铝前体颗粒和晶种颗粒的混合物，其中晶种颗粒的中心粒径为40nm或更小，粒径大于100nm的粗粒子数与总粒子数之比为1％以下。

85. 发明申请

US20060193162A1 Ferroelectric Memory and Semiconductor Memory 有权
标题翻译：铁电存储器和半导体存储器
公开(公告)号：US20060193162A1
公开(公告)日：2006-08-31
申请号：US11382098
申请日：2006-05-08
申请人： Ryu Ogiwara , Daisaburo Takashima , Sumio Tanaka , Yukihito Oowaki , Yoshiaki Takeuchi
发明人： Ryu Ogiwara , Daisaburo Takashima , Sumio Tanaka , Yukihito Oowaki , Yoshiaki Takeuchi
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A chain type ferroelectric random access memory has a memory cell unit including ferroelectric memory cells electrically connected in series to each other, a plate line connected to an electrode of the memory cell unit, a bit line connected to the other electrode of the memory cell unit via a switching transistor, a sense amplifier which amplifies the voltages of this bit line and its complementary bit line, and a transistor inserted between the switching transistor and the sense amplifier. A value, being the minimum value of the gate voltage in the transistor obtained during elevation of the plate line voltage and comparative amplification, is smaller than a value, being the maximum value of the gate voltage in the transistor obtained during fall of the plate line voltage and comparative amplification. With these features, decrease in the accumulated charge of polarization in the memory cell is reduced and occurrence of disturb is prevented during read/write operations.
摘要翻译：链式铁电随机存取存储器具有包括彼此串联电连接的铁电存储单元的存储单元单元，连接到存储单元单元的电极的板线，连接到存储单元单元的另一个电极的位线通过开关晶体管，放大该位线及其互补位线的电压的读出放大器以及插在开关晶体管和读出放大器之间的晶体管。作为板线电压和比较放大的升压期间获得的晶体管中的栅极电压的最小值的值小于在板线掉电期间获得的晶体管中的栅极电压的最大值电压和比较放大。利用这些特征，存储单元中的累积电荷的减小减少，并且在读/写操作期间阻止了干扰的发生。

86. 发明授权

US07078010B2 Method for producing α-alumina powder 失效
标题翻译：生产α-氧化铝粉末的方法
公开(公告)号：US07078010B2
公开(公告)日：2006-07-18
申请号：US10846693
申请日：2004-05-17
申请人： Hajime Maki , Yoshiaki Takeuchi , Kazuhisa Kajihara
发明人： Hajime Maki , Yoshiaki Takeuchi , Kazuhisa Kajihara
IPC分类号： C01F7/02
CPC分类号： B82Y30/00 , C01F7/308 , C01P2004/04 , C01P2004/50 , C01P2004/62 , C01P2004/64 , C01P2006/12
摘要： A method for producing α-alumina powder is described. The method comprises the steps of removing water from a compound containing the following (1), (2), (3) and (4), and calcining the results: (1) α-alumina precursor, (2) seed crystal, (3) water, (4) nitrate ion in an amount of from 2.8 to 3.3 mol per mol of aluminum (Al) contained in the α-alumina precursor and the seed crystal.
摘要翻译：描述了生产α-氧化铝粉末的方法。该方法包括从含有以下（1），（2），（3）和（4）的化合物中除去水的步骤，并煅烧结果：（1）α-氧化铝前体，（2）晶种，（ 3）水，（4）硝酸根离子，其含量为α-氧化铝前体和晶种中每摩尔铝（Al）2.8-3.3摩尔。

87. 发明申请

US20050232067A1 Semiconductor integrated circuit device and data write method thereof 失效
标题翻译：半导体集成电路器件及其数据写入方法
公开(公告)号：US20050232067A1
公开(公告)日：2005-10-20
申请号：US10879297
申请日：2004-06-30
申请人： Yoshiaki Takeuchi
发明人： Yoshiaki Takeuchi
IPC分类号： G11C11/401 , G11C8/00 , G11C8/06 , G11C8/08 , G11C11/22 , G11C11/403 , G11C11/407
CPC分类号： G11C11/22 , G11C8/06 , G11C8/08 , G11C11/40615
摘要： A semiconductor integrated circuit device includes a memory cell array, an address transition detecting circuit which detects transition of a column address signal, the column address signal being used to specify a column address of the memory cell array, a control circuit having a timeout circuit, the control circuit which generates an internal circuit control signal of desired length used to control column access to the memory cell array based on a result of detection by the address transition detecting circuit, and a column selection line whose selection time is controlled by the control circuit, wherein the column address signal used for selection of the column selection line is latched in a period of time in which the column selection line is selected at a write operation time.
摘要翻译：半导体集成电路装置包括存储单元阵列，检测列地址信号的转换的地址转换检测电路，用于指定存储单元阵列的列地址的列地址信号，具有超时电路的控制电路，所述控制电路根据所述地址转换检测电路的检测结果生成用于控制对所述存储单元阵列的列访问的期望长度的内部电路控制信号;以及列选择线，其选择时间由所述控制电路其中，用于选择列选择线的列地址信号在写入操作时间选择列选择线的时间段中被锁存。

88. 发明申请

US20050223990A1 Plasma processing system and its substrate processing process, plasma enhanced chemical vapor deposition system and its film deposition process 审中-公开
标题翻译：等离子体处理系统及其基板加工工艺，等离子体增强化学气相沉积系统及其薄膜沉积工艺
公开(公告)号：US20050223990A1
公开(公告)日：2005-10-13
申请号：US10519475
申请日：2003-10-01
申请人： Keisuke Kawamura , Akira Yamada , Hiroshi Mashima , Kenji Tagashira , Yoshiaki Takeuchi
发明人： Keisuke Kawamura , Akira Yamada , Hiroshi Mashima , Kenji Tagashira , Yoshiaki Takeuchi
IPC分类号： H05H1/46 , B01J19/08 , C23C16/509 , H01J37/32 , H01L21/205 , C23C16/00
CPC分类号： H01J37/32082 , C23C16/509 , H01J37/32183 , H01J37/32541
摘要： An object is to provide apparatuses for plasma processing which can make the distribution of the film thickness of a substance on a substrate uniform, methods of processing a substrate therewith, apparatuses for plasma-enhanced chemical vapor deposition, and methods for film formation therewith. When a desired substance is vapor deposited on the surface of a substrate (3), characteristics of the distribution of the thickness of a film on the substrate having a large area are improved by eliminating local imbalance in the distribution of the film thickness originating from deviation in the distribution of voltage on the ladder electrode (2), by way of adjusting impedance matching between each coaxial cable and corresponding feeding point for the ladder-shaped electrode (2) using branch cables provided to the coaxial cables for supplying high-frequency electric power to a ladder-shaped electrode (2) so as to make the film thickness uniform in the direction at right angles with the direction of fed electric power, whereby high-frequency electric power which is fed to each longitudinal electrode rod (2a) of the ladder-shaped electrode (2) can be adjusted, and distribution of voltage at a right or left part of the substrate and distribution of voltage at a central part of the substrate can be balanced, as well as by way of promoting uniformity in the distribution of the film thickness in the direction of fed electric power, by supplying streams of high-frequency electric power having the same frequency from two power supplies to the ladder-shaped electrode (2) with the phase difference between the high-frequency electric powers being varied over time.
摘要翻译：目的在于提供能够使基板上的物质的膜厚分布均匀的等离子体处理装置，用于处理基板的方法，等离子体增强化学气相沉积的装置及其成膜方法。当在基板（3）的表面上气相沉积所需物质时，通过消除由于偏差导致的膜厚度分布的局部不平衡，改善了具有大面积的基板上的膜的厚度分布特性在梯形电极（2）上的电压分配中，通过使用提供给用于提供高频电气的同轴电缆的分支电缆来调节每个同轴电缆与梯形电极（2）的相应馈电点之间的阻抗匹配向梯形电极（2）施加电力以使膜厚度与与馈送电力方向成直角的方向均匀，由此，供给到每个纵向电极棒（2a）的高频电力可以调节梯形电极（2），并且可以调整基板的右侧或左侧的电压分布以及中心部分的电压分布可以通过将来自两个电源的具有相同频率的高频电力的流提供给梯子，从而通过提高膜馈送电力方向上的膜厚分布的均匀性来平衡基板形状的电极（2），其中高频电功率之间的相位差随时间变化。

89. 发明申请

US20050214201A1 Method for producing an alpha-alumina powder 审中-公开
标题翻译： α-氧化铝粉末的制造方法
公开(公告)号：US20050214201A1
公开(公告)日：2005-09-29
申请号：US11079163
申请日：2005-03-14
申请人： Shinobu Maruno , Hajime Maki , Yoshiaki Takeuchi
发明人： Shinobu Maruno , Hajime Maki , Yoshiaki Takeuchi
IPC分类号： C01F7/02 , C01F7/30 , C01F7/44
CPC分类号： B82Y30/00 , C01F7/02 , C01F7/308 , C01F7/442 , C01P2002/72 , C01P2002/74 , C01P2004/04 , C01P2004/62 , C01P2004/64 , C01P2006/12
摘要： The present invention provides a method for producing an α-alumina powder. The method for producing an α-alumina powder comprises steps of: (1) pulverizing a metal compound having a full width at half maximum (Ho) of a main peak in XRD pattern to obtain a seed crystal having a full width at half maximum (H) of the main peak in XRD pattern, (2) mixing the obtained seed crystal with an aluminum compound, (3) calcining the mixture, and wherein a ratio of H/Ho is 1.06 or more.
摘要翻译：本发明提供一种生产α-氧化铝粉末的方法。制造α-氧化铝粉末的方法包括以下步骤：（1）以XRD图案粉碎主峰的半峰全宽（Ho）的金属化合物，得到半峰全宽的晶种（ H），（2）将获得的晶种与铝化合物混合，（3）煅烧混合物，其中H / Ho比为1.06以上。

90. 发明申请

US20050172933A1 Fuel injection control system 有权
标题翻译：燃油喷射控制系统
公开(公告)号：US20050172933A1
公开(公告)日：2005-08-11
申请号：US11049009
申请日：2005-02-01
申请人： Yoshiaki Takeuchi , Kenichi Machida , Hideo Nihei
发明人： Yoshiaki Takeuchi , Kenichi Machida , Hideo Nihei
IPC分类号： F02D41/10 , F02D41/12 , F02M69/04 , F02M51/00 , F02D41/00
CPC分类号： F02D41/3094 , F02D41/10 , F02D41/126 , F02M69/043 , F02M69/044
摘要： A fuel injection valve control to correctingly increase the fuel amount appropriately for realizing a favorable acceleration performance at the time of accelerating after a throttle full closure period is finished.
摘要翻译：一种燃料喷射阀控制装置，用于在节气门完全关闭期间结束之后适当地增加燃料量以实现加速时的良好加速性能。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式