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81. 发明申请

US20050124119A1 Open drain input/output structure and manufacturing method thereof in semiconductor device 审中-公开
标题翻译：半导体器件中的开漏输入/输出结构及其制造方法
公开(公告)号：US20050124119A1
公开(公告)日：2005-06-09
申请号：US11039970
申请日：2005-01-20
申请人： Byung-Sup Shim , Young-Ho Kim
发明人： Byung-Sup Shim , Young-Ho Kim
IPC分类号： H01L27/102 , H01L21/8234 , H01L27/088 , H01L29/10 , H01L29/78
CPC分类号： H01L29/7835 , H01L29/1045
摘要： The present invention relates to an open drain input/output structure and manufacturing method thereof in which a n-channel depletion transistor for pull-up resistance can be used like an enhancement transistor without impurity ion implantation process when being formed an open drain input/output terminal. An open drain input/output structure in a semiconductor device according to the present invention includes: a gate formed with an enhancement transistor at a predetermined portion on a first conductive-type semiconductor substrate which is formed with a gate insulating layer; a second conductive-type source/drain region formed in the semiconductor substrate at the both sides of the gate; and a second conductive-type impurity implantation region formed at a predetermined portion of a channel region at the lower part of the gate so as to selectively connected to the source region or the drain region. Therefore, according to the present invention, because the gate length of a n-channel depletion transistor is designed to have longer than conventional ones' so as to changed a depletion transistor into an enhancement transistor there is no necessary an impurity ion implantation process after gate forming process when an open drain I/O is achieved. Therefore, all a pull-up resistance I/O and an open drain I/O of a mask ROM embedded MCU, EPROM embedded MCU can be achieved with the same lay out structure thereby to be compatible when being manufactured MCU.
摘要翻译：本发明涉及一种开漏输入/输出结构及其制造方法，其中当形成开漏输入/输出时，可以使用上拉电阻的n沟道耗尽晶体管，像无杂质离子注入工艺的增强型晶体管终奌站。根据本发明的半导体器件中的开漏输入/输出结构包括：在第一导电型半导体衬底上的预定部分形成有形成有栅极绝缘层的增强晶体管的栅极; 形成在栅极两侧的半导体衬底中的第二导电型源/漏区; 以及形成在栅极的下部的沟道区的预定部分处以选择性地连接到源极区或漏极区的第二导电型杂质注入区。因此，根据本发明，由于n沟道耗尽晶体管的栅极长度被设计成比常规栅极长，因此将耗尽晶体管改变为增强晶体管，栅极之后不需要杂质离子注入工艺当达到开漏I / O时，形成工艺。因此，所有上拉电阻I / O和掩模ROM嵌入式MCU的开漏I / O，EPROM嵌入式MCU都可以通过相同的布局结构实现，从而在制造MCU时兼容。

82. 发明授权

US06777379B2 Cleaning solution and method of cleaning anti-reflective coating composition using the same 失效
标题翻译：清洁溶液及使用其的抗反射涂料组合物的清洗方法
公开(公告)号：US06777379B2
公开(公告)日：2004-08-17
申请号：US10136370
申请日：2002-05-02
申请人： Dong-Jin Park , Kyung-Dae Kim , Hoi-Sik Chung , Pil-Kwon Jun , Young-Ho Kim
发明人： Dong-Jin Park , Kyung-Dae Kim , Hoi-Sik Chung , Pil-Kwon Jun , Young-Ho Kim
IPC分类号： B08B304
CPC分类号： C11D7/06 , C11D7/10 , C11D7/264 , C11D7/32 , C11D7/5004 , C11D11/0047 , Y10S134/902
摘要： A cleaning solution for a cured anti-reflective layer (AFC layer) component and a method of cleaning an anti-reflective layer component by using the same, wherein the cleaning solution comprises about 5-30% by weight of ammonium hydroxide, about 23-70% by weight of an organic solvent and about 10-50% by weight of water. When an organic material is spattered to adjacent equipment during implementing a coating process onto a wafer, the equipment is detached and then is dipped into the cleaning solution. Thereafter, the equipment is rinsed and dried. Cured and non-cured organic materials are advantageously removed. Cured organic materials left for a period of time, particularly anti-reflective layer components are advantageously removed.
摘要翻译：用于固化的抗反射层（AFC层）组分的清洁溶液和通过使用该清洁溶液清洁抗反射层组分的方法，其中所述清洁溶液包含约5-30重量％的氢氧化铵，约23- 70重量％的有机溶剂和约10-50重量％的水。当在晶片上实施涂覆工艺期间将有机材料溅射到相邻设备时，将设备分离，然后浸入清洁溶液中。此后，将设备冲洗干燥。有机地除去固化和未固化的有机材料。留下一段时间的固化有机材料，特别是抗反射层组分有利地被去除。

83. 发明授权

US06282456B1 Digital audio processor 失效
标题翻译：数字音频处理器
公开(公告)号：US06282456B1
公开(公告)日：2001-08-28
申请号：US08889193
申请日：1997-07-08
申请人： Young-Ho Kim
发明人： Young-Ho Kim
IPC分类号： G06F1700
CPC分类号： H03K19/00315
摘要： A digital audio processor includes a first logic unit reversing an enable signal, second logic unit reversing a data signal, a third logic unit receiving output signals from the first and second logic unit and outputting a logical NOR result, a fourth logic unit receiving an output signal from the second logic unit and the enable signal, a 5V tolerant circuit receiving output signal from the third logic unit and outputting signals depending upon an input voltage of a pad, a fifth logic unit reversing output from the fourth logic unit, a PMOS transistor coupled to a supply voltage and receiving an output signal from the 5V tolerant circuit, and an NMOS transistor connected serially to the PMOS transistor and a ground voltage.
摘要翻译：数字音频处理器包括反转使能信号的第一逻辑单元，反转数据信号的第二逻辑单元，从第一和第二逻辑单元接收输出信号并输出逻辑NOR结果的第三逻辑单元，接收输出的第四逻辑单元来自第二逻辑单元的信号和使能信号，5V容限电路接收来自第三逻辑单元的输出信号，并根据焊盘的输入电压输出信号，第五逻辑单元反转第四逻辑单元的输出，PMOS晶体管耦合到电源电压并接收来自5V容限电路的输出信号，以及串联连接到PMOS晶体管的NMOS晶体管和接地电压。

84. 发明授权

US6162437A Method for inhibiting interleukin-6 production by administering extracts from root of Stephania tetrandra 失效
标题翻译：通过施用来自Stephania tetrandra的根的提取物来抑制白细胞介素-6产生的方法
公开(公告)号：US6162437A
公开(公告)日：2000-12-19
申请号：US978321
申请日：1997-11-25
申请人： Kwang-Ho Pyun , Inpyo Choi , Hyung-Sik Kang , Jung-Joon Lee , Young-Ho Kim
发明人： Kwang-Ho Pyun , Inpyo Choi , Hyung-Sik Kang , Jung-Joon Lee , Young-Ho Kim
IPC分类号： A61K36/59 , A61K35/78
CPC分类号： A61K36/59
摘要： Method for inhibiting the production of interleukin-6 (hereinafter, referred to as "IL-6") in human body, which comprises administering extracts from a root of Stephania tetrandra S. Moore; and method for treating a patient of an immune disease caused by an overproduction of interleukin-6 by inhibiting the production of interleukin-6, which comprises administering extracts from a root of Stephania tetrandra S. Moore to the patient.
摘要翻译：抑制人体中白细胞介素-6（以下称为“IL-6”）的产生的方法，其包括施用来自Stephania tetrandra S.Moore的根的提取物; 以及通过抑制白细胞介素-6的产生来治疗由白细胞介素-6过量产生引起的免疫疾病的患者的方法，其包括向患者施用来自Stephania tetrandra S.Moore的根的提取物。

85. 发明授权

US5721474A Method and apparatus for preventing excessive current flow in a motor 失效
标题翻译：用于防止电动机中的电流过大的方法和装置
公开(公告)号：US5721474A
公开(公告)日：1998-02-24
申请号：US700568
申请日：1996-08-07
申请人： Young-Sik Lee , Byoung-Own Min , Young-Ho Kim
发明人： Young-Sik Lee , Byoung-Own Min , Young-Ho Kim
IPC分类号： H02H7/093 , H02H7/08 , H02P7/288 , H02P7/29
CPC分类号： H02P7/288 , H02H7/0833 , H02P2205/01 , Y10S388/903
摘要： A motor control circuit comprises a current command circuit generates a current command signal proportional to a selected motor speed. A comparator generates a comparator output signal proportional to the difference between the current command signal and a signal proportional to current flow in the motor. An output terminal of the comparator is operatively connected to a logic circuit which generates a control signal having a duty cycle that varies proportional to the comparator output signal. A drive circuit has an input terminal to which the control signal is applied and an output terminal connected to the motor. The drive circuit generates a motor drive signal proportional to the control signal for driving said motor. A current command control circuit has an input terminal to which the current control signal is applied and an output terminal to which the current command signal is applied. The current command control circuit generates a signal proportional to the control signal and reduces the current command signal when the proportional signal is less than the current command signal.
摘要翻译：电动机控制电路包括电流指令电路，产生与所选择的电动机速度成比例的电流指令信号。比较器产生与电流指令信号和与电动机中的电流成比例的信号成比例的比较器输出信号。比较器的输出端可操作地连接到逻辑电路，该逻辑电路产生具有与比较器输出信号成正比的占空比的控制信号。驱动电路具有施加控制信号的输入端子和连接到电动机的输出端子。驱动电路产生与用于驱动所述电动机的控制信号成比例的电动机驱动信号。电流指令控制电路具有施加电流控制信号的输入端子和施加电流指令信号的输出端子。当比例信号小于电流指令信号时，电流指令控制电路产生与控制信号成比例的信号，并减小电流指令信号。

86. 发明授权

US09315217B2 Production method for a splash shield using a continuous extrusion-injection-foaming moulding process 有权
标题翻译：使用连续挤出注塑发泡成型工艺的防溅罩的生产方法
公开(公告)号：US09315217B2
公开(公告)日：2016-04-19
申请号：US13988526
申请日：2011-11-28
申请人： Yong-Hoon Yoon , Moo-Sun Kim , Kyu-Se Lee , Young-Min Kim , Byeong-Sang Mun , Sung-Woon Cha , Young-Ho Kim , Soo-Hyun Cho
发明人： Yong-Hoon Yoon , Moo-Sun Kim , Kyu-Se Lee , Young-Min Kim , Byeong-Sang Mun , Sung-Woon Cha , Young-Ho Kim , Soo-Hyun Cho
IPC分类号： B29C44/04 , B62D25/16 , B29C45/16 , B29C44/08 , B29C45/04 , B29L31/30 , B29C45/18 , B29K105/04 , B29K75/00 , B29K105/12
CPC分类号： B62D25/161 , B29C44/04 , B29C44/0461 , B29C44/08 , B29C45/045 , B29C45/162 , B29C45/1816 , B29C2045/1692 , B29K2075/00 , B29K2105/04 , B29K2105/12 , B29K2995/0002 , B29L2031/3005
摘要： The present invention relates to a method for producing a splash shield, in which method a base-portion raw material comprising a plastic, glass fibers, a compatibilizer and rubber is subjected to melt extrusion while at the same time injection molding is performed, and then, without removing the injection-molded article from the injection mold, the injection mold is rotated in the open state, and the injection-molded article is conveyed to a foaming mold and subsequently undergoes flame treatment and a polyurethane foam molding step. A single process in the production method is used for the procedure in which the materials are separately compounded and pelletized and the procedure in which the injection-molded article is molded.
摘要翻译：防溅罩的制造方法技术领域本发明涉及防溅罩的制造方法，其中包括塑料，玻璃纤维，增容剂和橡胶的基底原料在熔融挤出的同时进行注射成型，然后在不从注射模具中取出注射成型制品的情况下，注射模具在打开状态下旋转，并且将注射成型制品输送到发泡模具，随后进行火焰处理和聚氨酯泡沫模制步骤。在制造方法中使用单一的方法，其中分别复合和造粒材料以及注模制品的成型方法。

87. 外观设计

USD694212S1 Mobile terminal 有权
公开(公告)号：USD694212S1
公开(公告)日：2013-11-26
申请号：US29417764
申请日：2012-04-09
申请人： Beyong-Ho Yuu , Young-Ho Kim , Tae-Sung Choi , Kyu-Hyuk Lee
设计人： Beyong-Ho Yuu , Young-Ho Kim , Tae-Sung Choi , Kyu-Hyuk Lee

88. 外观设计

USD694211S1 Mobile terminal 有权
公开(公告)号：USD694211S1
公开(公告)日：2013-11-26
申请号：US29417749
申请日：2012-04-09
申请人： Beyong-Ho Yuu , Young-Ho Kim , Tae-Sung Choi , Kyu-Hyuk Lee
设计人： Beyong-Ho Yuu , Young-Ho Kim , Tae-Sung Choi , Kyu-Hyuk Lee

89. 发明授权

US08584313B2 Vacuum cleaner 有权
标题翻译：吸尘器
公开(公告)号：US08584313B2
公开(公告)日：2013-11-19
申请号：US13002122
申请日：2009-04-29
申请人： Young-Ho Kim
发明人： Young-Ho Kim
IPC分类号： B24B9/10
CPC分类号： A47L9/1691 , A47L9/108 , A47L9/1608 , A47L9/1683
摘要： A vacuum cleaner is provided. The vacuum cleaner includes a cleaner body including a suction motor, a dust separation device communicated with the cleaner body, the dust separation device separating dusts, a dust container separably mounted on the cleaner body, the dust container including a dust storage part storing the dusts separated by the dust separation device, a compressing member compressing the dusts stored in the dust storage part, a magnetic member seat part disposed at the dust container, a magnetic member seated on the magnetic member seat part, a cover coupled to the magnetic member seat part to cover the magnetic member, and a magnetism detection unit disposed at the cleaner body to detect magnetism of the magnetic member.
摘要翻译：提供吸尘器。真空吸尘器包括吸尘器主体，其包括抽吸马达，与吸尘器主体连通的灰尘分离装置，分离灰尘的灰尘分离装置，可分离地安装在吸尘器主体上的灰尘容器，该贮尘容器包括存放灰尘的灰尘储存部由灰尘分离装置隔开的压缩构件，压缩存储在贮尘部中的灰尘的压缩构件，设置在贮尘容器上的磁性构件座部，安置在磁性构件座部上的磁性构件，与磁性构件座覆盖磁性构件的部分，以及设置在吸尘器主体处以检测磁性构件的磁性的磁性检测单元。

90. 发明授权

US08551689B2 Methods of manufacturing semiconductor devices using photolithography 有权
标题翻译：使用光刻制造半导体器件的方法
公开(公告)号：US08551689B2
公开(公告)日：2013-10-08
申请号：US13117667
申请日：2011-05-27
申请人： Mi-Ra Park , Kyoung-Mi Kim , Jeong-Ju Park , Bo-Hee Lee , Jae-Ho Kim , Young-Ho Kim
发明人： Mi-Ra Park , Kyoung-Mi Kim , Jeong-Ju Park , Bo-Hee Lee , Jae-Ho Kim , Young-Ho Kim
IPC分类号： G03F7/26
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/091 , G03F7/40
摘要： A method of manufacturing a semiconductor device using a photolithography process may include forming an anti-reflective layer and a first photoresist film on a lower surface. The first photoresist film may be exposed to light and a first photoresist pattern having a first opening may be formed by developing the first photoresist film. A plasma treatment can be performed on the first photoresist pattern and a second photoresist film may be formed on the first photoresist pattern, which may be exposed to light. A second photoresist pattern may be formed to have a second opening by developing the second photoresist film. Here, the second opening may be substantially narrower than the first opening.
摘要翻译：使用光刻工艺制造半导体器件的方法可以包括在下表面上形成抗反射层和第一光致抗蚀剂膜。可以将第一光致抗蚀剂膜暴露于光，并且可以通过显影第一光致抗蚀剂膜来形成具有第一开口的第一光致抗蚀剂图案。可以在第一光致抗蚀剂图案上进行等离子体处理，并且可以在可以暴露于光的第一光致抗蚀剂图案上形成第二光致抗蚀剂膜。可以通过显影第二光致抗蚀剂膜来形成第二光致抗蚀剂图案以具有第二开口。这里，第二开口可以比第一开口窄得多。

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