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81. 发明授权

US07414800B2 Solid immersion lens holder 有权
标题翻译：固体浸没镜头支架
公开(公告)号：US07414800B2
公开(公告)日：2008-08-19
申请号：US11333554
申请日：2006-01-18
申请人： Yoshio Isobe , Hiroshi Tanabe , Ikuo Arata
发明人： Yoshio Isobe , Hiroshi Tanabe , Ikuo Arata
IPC分类号： G02B7/02
CPC分类号： G02B7/02 , G02B21/02
摘要： A solid immersion lens holder 8A is provided with a base part 50 attached to an objective lens 21, and a lens holding part 60 provided with the base part 50, extending in a direction of optical axis L of the objective lens 21, and arranged to hold a solid immersion lens 6 at an end portion thereof. The lens holding part holds the solid immersion lens so that light emerging from the solid immersion lens to the base part side travels through a region outside the lens holding part and toward the base part, and the base part has a light passing portion 53 which transmits the light toward the objective lens. Since the lens holding part extends in the direction of the optical axis L of the objective lens, even in a case where an observation object 11 is observed as located on a bottom surface of recess 13, the lens holding part will be prevented from contacting a side wall 13a of the recess. As a result, it becomes feasible to observe the observation object up to a region closer to the vicinity of peripheral part 11a of the observation object. This provides a solid immersion lens holder allowing observation up to a region closer to a peripheral part of an observation object even in a case where the observation object is set in a recess of a sample.
摘要翻译：固体浸没透镜保持器8A设置有附接到物镜21的基部50和设置有基部50的透镜保持部60，该物镜保持部60沿着物镜21的光轴L的方向延伸，并且布置在其端部保持固体浸没透镜6。透镜保持部保持固体浸没透镜，使得从固体浸没透镜向基部侧露出的光穿过透镜保持部分外部的区域并朝向基部，并且基部具有透光部分53 朝向物镜的光。由于透镜保持部在物镜的光轴L的方向上延伸，所以即使在观察对象物11位于凹部13的底面的情况下，透镜保持部也不会与凹部的侧壁13a。结果，观察对象直到观察对象的周边部11a附近的区域变得可行。即使在将观察对象设置在样本的凹部中的情况下，也能够观察到靠近观察对象的周边部的区域的固体浸没透镜保持架。

82. 发明申请

US20060289934A1 Semiconductor device, liquid crystal display panel, electronic device, and method of manufacturing semiconductor device 审中-公开
标题翻译：半导体装置，液晶显示面板，电子装置以及半导体装置的制造方法
公开(公告)号：US20060289934A1
公开(公告)日：2006-12-28
申请号：US11438846
申请日：2006-05-23
申请人： Hiroshi Tanabe , Shunji Tsuida
发明人： Hiroshi Tanabe , Shunji Tsuida
IPC分类号： H01L27/12
CPC分类号： H01L27/1296 , H01L29/78621
摘要： In a plurality of transistors in which the thresholds that are required in the circuit design are equal, a transistor having an initial threshold at a lower limit within an acceptable range of the required threshold is arranged at a circuit position where an absolute value of a threshold voltage increases by operating, and a transistor having an initial threshold at an upper limit within an acceptable range of the required threshold is arranged at a circuit position where an absolute value of a threshold voltage decreases by operating.
摘要翻译：在其中电路设计中所需的阈值相等的多个晶体管中，具有在所需阈值的可接受范围内的下限的初始阈值的晶体管被布置在电路绝对值的阈值电压通过工作而增加，并且具有在所需阈值的可接受范围内的上限的初始阈值的晶体管被布置在阈值电压的绝对值通过工作而降低的电路位置。

83. 发明申请

US20060286408A1 1,8-Naphthyridine compound and organic light-emitting device using the same 有权
标题翻译： 1,8-萘啶化合物和使用其的有机发光装置
公开(公告)号：US20060286408A1
公开(公告)日：2006-12-21
申请号：US11455849
申请日：2006-06-20
申请人： Koichi Suzuki , Hiroshi Tanabe , Chika Negishi , Taiki Watanabe , Akihiro Senoo , Kazunori Ueno
发明人： Koichi Suzuki , Hiroshi Tanabe , Chika Negishi , Taiki Watanabe , Akihiro Senoo , Kazunori Ueno
IPC分类号： H01L51/54 , H05B33/12 , C07D471/02
CPC分类号： H01L51/0072 , C07D471/04 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1029 , C09K2211/1033 , C09K2211/1044 , C09K2211/1048 , C09K2211/1059 , C09K2211/1088 , C09K2211/185 , C09K2211/186 , C09K2211/188 , H01L51/0054 , H01L51/0058 , H01L51/5012 , H01L51/5048 , H05B33/14 , Y10S428/917
摘要： Provided a novel 1,8-naphthyridine compound represented by the following general formula [I]: wherein R1 to R6 each represent one selected from the group consisting of a hydrogen atom; an alkyl group, an aralkyl group, an aryl group, a heterocyclic group, a condensed polycyclic aromatic group, a condensed polycyclic heterocyclic group and an aryloxy group which may be substituted; a substituted amino group; a halogen atom; a trifluromethyl group; and a cyano group, and may be the same as or different from one another, provided that at least two of R1 to R6 each represent one selected from the group consisting of an aralkyl group, an aryl group, a heterocyclic group, a condensed polycyclic aromatic group, a condensed polycyclic heterocyclic group and an aryloxy group which may be substituted; and a substituted amino group.
摘要翻译：提供由以下通式[I]表示的新颖的1,8-萘啶化合物：其中R 1至R 6各自表示选自氢原子; 烷基，芳烷基，芳基，杂环基，缩合多环芳基，稠合多环杂环基和可被取代的芳氧基; 取代氨基; 卤素原子; 三氟甲基; 和氰基，并且可以彼此相同或不同，条件是R 1至R 6中的至少两个各自表示选自以下的一个：芳烷基，芳基，杂环基，稠合多环芳基，稠合多环杂环基和可被取代的芳氧基; 和取代的氨基。

84. 发明申请

US20060186475A1 Thin film transistor having high mobility and high on-current and method for manufacturing the same 有权
标题翻译：具有高迁移率和高导通电流的薄膜晶体管及其制造方法
公开(公告)号：US20060186475A1
公开(公告)日：2006-08-24
申请号：US11410184
申请日：2006-04-24
申请人： Hiroshi Tanabe , Hiroshi Haga
发明人： Hiroshi Tanabe , Hiroshi Haga
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L27/1285 , H01L27/1214 , H01L27/14643 , H01L29/4908 , H01L29/66757 , H01L29/78675
摘要： An image input apparatus includes an insulating substrate; polycrystalline silicon islands formed on said insulating substrate; pixels each including thin film transistors and a photodiode formed above said thin film transistors, each of the thin film transistors have a source region, a channel region and a drain region foamed in one of the polycrystalline silicon islands.
摘要翻译：图像输入装置包括绝缘基板; 形成在所述绝缘基板上的多晶硅岛; 每个薄膜晶体管的每一个包括薄膜晶体管和形成在所述薄膜晶体管上方的光电二极管，每个薄膜晶体管具有在多晶硅岛之一中发泡的源极区，沟道区和漏极区。

85. 发明申请

US20050012098A1 Thin film transistor formed on a transparent substrate 有权
标题翻译：薄膜晶体管形成在透明基板上
公开(公告)号：US20050012098A1
公开(公告)日：2005-01-20
申请号：US10911833
申请日：2004-08-05
申请人： Yoshinobu Satou , Katsuhisa Yuda , Hiroshi Tanabe
发明人： Yoshinobu Satou , Katsuhisa Yuda , Hiroshi Tanabe
IPC分类号： G02F1/136 , B23K26/04 , B23K26/06 , G02F1/1368 , H01L21/027 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L23/544 , H01L27/12 , H01L27/146 , H01L29/786 , H01L31/036
CPC分类号： H01L27/1296 , B23K26/04 , B23K26/066 , H01L21/02675 , H01L21/2026 , H01L23/544 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78633 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of at least one of the gate electrode film layer and source and drain regions and formed at one and the same position as the gate electrode film layer or source and drain region.
摘要翻译：薄膜晶体管形成在透明基板上，具有栅极电极膜层和源极和漏极区域，并且还具有由与栅极中至少一个的构成材料相同的构成材料制成的对准标记电极膜层和源极和漏极区，并且形成在与栅极电极膜层或源极和漏极区域相同的位置处。

86. 发明授权

US06841270B2 Organic light-emitting device having pyrylium salt as charge transport material 失效
标题翻译：具有吡喃鎓盐作为电荷传输材料的有机发光装置
公开(公告)号：US06841270B2
公开(公告)日：2005-01-11
申请号：US10417128
申请日：2003-04-17
申请人： Xiao-Chang Charles Li , Kazunori Ueno , Akihito Saitoh , Hiroshi Tanabe , Tadashi Okamoto
发明人： Xiao-Chang Charles Li , Kazunori Ueno , Akihito Saitoh , Hiroshi Tanabe , Tadashi Okamoto
IPC分类号： H01L51/50 , C09K11/06 , H05B33/12 , H05B33/14 , H05B33/22
CPC分类号： C09K11/06 , C09K2211/1029 , C09K2211/1048 , C09K2211/1088 , Y10S428/917
摘要： An organic light-emitting device (OLED) in which pyrylium salt or its derivative, such as thiapyrylium, selenapyrylium, or telluropyrylium, is used as a charge transport material and/or at least a dopant or principal component in a charge transport layers.
摘要翻译：其中使用吡喃鎓盐或其衍生物如硫杂吡喃鎓，硒代吡喃鎓或电流去酰吡喃的有机发光器件（OLED）作为电荷传输材料和/或电荷传输层中的至少一种掺杂剂或主要成分。

87. 发明授权

US06660402B2 Metal substrate 失效
公开(公告)号：US06660402B2
公开(公告)日：2003-12-09
申请号：US10242432
申请日：2002-09-13
申请人： Hiroshi Tanabe
发明人： Hiroshi Tanabe
IPC分类号： B32B312
CPC分类号： F01N3/2814 , F01N2260/10 , F01N2330/321 , Y10T428/1234
摘要： A honeycomb structure brazed with an outer casing has a large corrugated foil and a small corrugated foil overlapped and wound alternately and formed like a cylinder by diffused junction. The large corrugated foil and the small corrugated foil has 20 &mgr;m in thickness. The honeycomb structure has 900 cells/square inches in cell density. The large corrugated foil has a wave height of 0.81 mm and a pitch of 1.71 mm. The small corrugated foil has a wave height of 0.05 mm to 0.18 mm and a pitch of 1.29 mm to 1.39 mm. Whereby the produced stress in each corrugated foil upon thermal expansion is reduced.

88. 发明授权

US06531428B2 Low phosphorous engine oil composition and additive compositions 失效
标题翻译：低磷发动机油组成和添加剂组成
公开(公告)号：US06531428B2
公开(公告)日：2003-03-11
申请号：US08222495
申请日：1994-04-04
申请人： Morikuni Nakazato , Jiro Magarifuchi , Akihiro Mochizuki , Hiroshi Tanabe
发明人： Morikuni Nakazato , Jiro Magarifuchi , Akihiro Mochizuki , Hiroshi Tanabe
IPC分类号： C10M14112
CPC分类号： C10M141/12 , C10M129/10 , C10M129/95 , C10M133/16 , C10M133/52 , C10M133/56 , C10M135/10 , C10M135/18 , C10M137/10 , C10M139/00 , C10M141/10 , C10M143/00 , C10M143/10 , C10M143/12 , C10M145/14 , C10M159/20 , C10M159/22 , C10M159/24 , C10M167/00 , C10M2205/00 , C10M2205/02 , C10M2205/024 , C10M2205/04 , C10M2205/06 , C10M2207/023 , C10M2207/026 , C10M2207/027 , C10M2207/028 , C10M2207/044 , C10M2207/144 , C10M2207/146 , C10M2207/16 , C10M2207/26 , C10M2207/262 , C10M2207/289 , C10M2207/34 , C10M2209/084 , C10M2215/04 , C10M2215/06 , C10M2215/064 , C10M2215/065 , C10M2215/066 , C10M2215/067 , C10M2215/068 , C10M2215/08 , C10M2215/082 , C10M2215/086 , C10M2215/12 , C10M2215/122 , C10M2215/24 , C10M2215/26 , C10M2215/28 , C10M2217/02 , C10M2217/046 , C10M2217/06 , C10M2219/044 , C10M2219/046 , C10M2219/066 , C10M2219/068 , C10M2219/082 , C10M2219/083 , C10M2219/087 , C10M2219/088 , C10M2219/089 , C10M2223/045 , C10M2223/06 , C10M2223/061 , C10M2223/065 , C10M2227/00 , C10M2227/06 , C10M2227/061 , C10M2227/062 , C10M2227/063 , C10M2227/065 , C10M2227/066 , C10N2210/01 , C10N2210/02 , C10N2210/06 , C10N2240/10 , C10N2240/101 , C10N2240/102 , C10N2240/103 , C10N2240/104 , C10N2240/106 , C10N2270/02 , F02F7/006
摘要： A low phosphorous lubricating oil composition for internal combustion engines comprising an alkylthiocarbamate compound of the formula: wherein each of R1, R2, R3, and R4 independently represents an alkyl group of 1-18 carbon atoms, and (X) represents S, S—S, S—CH2—S, S—CH2CH2—S, S—CH2CH2CH2—S, or S—CH2CH(CH3)—S, and additive compositions and additive packages utilizing the above compound.
摘要翻译：一种用于内燃机的低磷润滑油组合物，其包含下式的烷基硫代氨基甲酸酯化合物：其中R 1，R 2，R 3和R 4各自独立地表示1-18个碳原子的烷基，和（X）表示S，SS， S-CH2-S，S-CH2CH2-S，S-CH2CH2CH2-S或S-CH2CH（CH3）-S，以及利用上述化合物的添加剂组合物和添加剂包。

89. 发明授权

US06486437B2 Apparatus for transforming semiconducting thin layer 有权
标题翻译：用于转换半导体薄层的装置
公开(公告)号：US06486437B2
公开(公告)日：2002-11-26
申请号：US09746433
申请日：2000-12-21
申请人： Hiroshi Tanabe
发明人： Hiroshi Tanabe
IPC分类号： B23K2612
CPC分类号： H01L21/0268 , B23K26/12 , B23K26/123 , B23K26/125 , B23K26/127 , H01L21/02422 , H01L21/02532
摘要： Disclosed is an apparatus for modifying a semiconducting thin layer, which has: a hermetically sealed container having a substrate mount section for mounting thereon a substrate with an amorphous semiconducting thin layer formed thereon, and a light transmissive window for introducing a laser beam; laser beam irradiation means for heat-melting the amorphous semiconducting thin layer; holding means for fixing and holding the substrate on the substrate mount section; and pressure control means which regulates the flow rate of gas fed into the hermetically sealed container to control the pressure of the atmosphere within the hermetically sealed container at the time of irradiation with the laser beam at a value above a vapor pressure specified by the temperature of the heat-melted amorphous semiconducting thin layer.
摘要翻译：公开了一种用于修改半导体薄层的装置，其具有：密封容器，具有用于安装其上形成有非晶半导体薄层的基板的基板安装部分和用于引入激光束的透光窗口; 用于对非晶半导体薄层进行加热熔融的激光束照射装置; 保持装置，用于将基板固定和保持在基板安装部分上; 以及压力控制装置，其调节供给到所述密封容器中的气体的流量，以在激光束照射时控制所述气密密封容器内的气氛的压力，所述气压高于由热熔融的非晶半导体薄层。

90. 发明授权

US06444508B1 Method of manufacturing thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US06444508B1
公开(公告)日：2002-09-03
申请号：US09900007
申请日：2001-07-09
申请人： Hiroshi Tanabe , Katsuhisa Yuda , Hiroshi Okumura , Yoshinobu Sato
发明人： Hiroshi Tanabe , Katsuhisa Yuda , Hiroshi Okumura , Yoshinobu Sato
IPC分类号： H01L2184
CPC分类号： H01L29/42384 , H01L27/14665 , H01L29/66757 , H01L29/78609
摘要： In a thin film transistor, a first insulating film on a silicon layer formed in an island on a substrate is smaller in thickness than the silicon layer so that the stepped island edges is gentle in slope to facilitate covering the island with a second insulating film. This reduces occurrence of gate leak considerably. Since the peripheral region of the stepped island is smaller in thickness than the central region above the channel, it is possible to minimize occurrence of gate electrode breakage. The silicon layer contains two or more inert gas atoms, and the atoms smaller in mass number (e.g., He) are contained in and near an interface with a silicon active layer while the atoms larger in mass number (e.g., Ar) than those smaller in mass number are contained in and near a second interface with a gate electrode.
摘要翻译：在薄膜晶体管中，形成在基板上的岛上的硅层上的第一绝缘膜的厚度比硅层的厚度小，使得台阶状的岛边缘倾斜平缓以便于用第二绝缘膜覆盖岛。这可以大大减少闸门泄漏的发生。由于阶梯状岛的周边区域的厚度比通道上方的中心区域的厚度小，所以能够最小化栅电极断裂的发生。硅层含有两个或更多个惰性气体原子，质量数较小的原子（例如，He）包含在与硅有源层的界面中和附近，而质量数（例如Ar）的原子比较小质量数量被包含在与栅电极的第二界面中和附近。

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