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81. 发明授权

US07303950B2 Semiconductor device, method of manufacturing same and method of designing same 有权
标题翻译：半导体装置及其制造方法及其设计方法
公开(公告)号：US07303950B2
公开(公告)日：2007-12-04
申请号：US11034938
申请日：2005-01-14
申请人： Yasuo Yamaguchi , Shigeto Maegawa , Takashi Ipposhi , Toshiaki Iwamatsu , Shigenobu Maeda , Yuuichi Hirano , Takuji Matsumoto , Shoichi Miyamoto
发明人： Yasuo Yamaguchi , Shigeto Maegawa , Takashi Ipposhi , Toshiaki Iwamatsu , Shigenobu Maeda , Yuuichi Hirano , Takuji Matsumoto , Shoichi Miyamoto
IPC分类号： H01L21/8238
CPC分类号： H01L21/84 , H01L27/1203
摘要： A partial oxide film (31) with well regions formed therebeneath isolates transistor formation regions in an SOI layer (3) from each other. A p-type well region (11) is formed beneath part of the partial oxide film (31) which isolates NMOS transistors from each other, and an n-type well region (12) is formed beneath part of the partial oxide film (31) which isolates PMOS transistors from each other. The p-type well region (11) and the n-type well region (12) are formed in side-by-side relation beneath part of the partial oxide film (31) which provides isolation between the NMOS and PMOS transistors. A body region is in contact with the well region (11) adjacent thereto. An interconnect layer formed on an interlayer insulation film (4) is electrically connected to the body region through a body contact provided in the interlayer insulation film (4). A semiconductor device having an SOI structure reduces a floating-substrate effect.
摘要翻译：在其之间形成的具有阱区的部分氧化物膜（31）将SOI层（3）中的晶体管形成区域彼此隔离。在部分氧化膜（31）的下部形成p型阱区（11），其将NMOS晶体管彼此隔离，并且在部分氧化膜（31）的一部分下面形成n型阱区（12）），其将PMOS晶体管彼此隔离。 p型阱区（11）和n型阱区（12）在部分氧化膜（31）的一部分下方并排地形成，其提供NMOS和PMOS晶体管之间的隔离。身体区域与与其相邻的井区域（11）接触。形成在层间绝缘膜（4）上的互连层通过设置在层间绝缘膜（4）中的主体接触部电连接到体区。具有SOI结构的半导体器件减少浮置衬底效应。

82. 发明申请

US20070108857A1 Driving apparatus for hybrid vehicle 有权
标题翻译：混合动力汽车的驱动装置
公开(公告)号：US20070108857A1
公开(公告)日：2007-05-17
申请号：US10590974
申请日：2005-04-27
申请人： Shinichi Nomura , Yasuo Yamaguchi , Takeshi Inuzuka
发明人： Shinichi Nomura , Yasuo Yamaguchi , Takeshi Inuzuka
IPC分类号： H02K7/10
CPC分类号： B60K6/365 , B60K1/02 , B60K6/387 , B60K6/405 , B60K6/48 , B60L11/14 , F16D25/0638 , Y02T10/6221 , Y02T10/70 , Y02T10/7077
摘要： A driving apparatus includes a transmission mechanism portion; a motor housed in a motor housing located at an engine side of the transmission mechanism portion; and a clutch interposed between an engine output shaft and an input shaft of the transmission mechanism portion, wherein: a secondary side of the clutch, which is connected to the input shaft, is configured by a cover; a rotor of the motor is integrally connected to the cover, which is the secondary side of the clutch; a stator of the motor is fixed to the motor housing; a front hub positioned at the engine side of the cover is rotatably supported at a front wall member of the motor housing; and a rear hub positioned at the transmission mechanism portion side of the cover is rotatably supported at a rear wall member of the motor housing.
摘要翻译：驱动装置包括传动机构部分; 容纳在位于所述变速机构部的发动机侧的马达壳体中的马达; 以及插入在所述变速机构部的发动机输出轴与输入轴之间的离合器，其中：与所述输入轴连接的所述离合器的二次侧由盖构成; 马达的转子与作为离合器的次级侧的盖一体连接; 电动机的定子固定在电动机壳体上; 位于盖的发动机侧的前轮毂可旋转地支撑在电动机壳体的前壁构件上; 并且位于盖的变速机构部分侧的后轮毂被可旋转地支撑在电动机壳体的后壁构件上。

83. 发明授权

US07163072B2 Motor-driven vehicle drive control apparatus and method thereof 失效
标题翻译：电动车辆驱动控制装置及其方法
公开(公告)号：US07163072B2
公开(公告)日：2007-01-16
申请号：US10475450
申请日：2002-12-20
申请人： Yasuo Yamaguchi
发明人： Yasuo Yamaguchi
IPC分类号： B60K6/02
CPC分类号： B60K6/26 , B60K6/485 , B60L3/0061 , B60L7/14 , B60L11/14 , B60L11/1851 , B60L11/1861 , B60L11/1868 , B60L15/025 , B60L15/2009 , B60L2210/10 , B60L2210/40 , B60L2240/12 , B60L2240/421 , B60L2240/423 , B60L2240/441 , B60L2240/443 , B60L2240/529 , B60L2240/545 , B60L2240/547 , B60L2240/549 , B60L2250/26 , B60L2270/145 , H02K1/276 , H02K21/14 , Y02T10/6226 , Y02T10/641 , Y02T10/643 , Y02T10/70 , Y02T10/7005 , Y02T10/7044 , Y02T10/7066 , Y02T10/7077 , Y02T10/7216 , Y02T10/7241 , Y02T10/7275
摘要： A vehicle drive control apparatus including a motor, a battery, an inverter having a direct current supplied from the battery, wherein the inverter converts the direct current into an alternating current and supplies the alternating current to the motor and a controller that transmits a drive signal to the inverter so as to execute a weak field control, wherein a charging current supplied to the battery, at a time when execution of the weak field control is not allowed, is set to be smaller than an overcharging current indicating a maximum value of an electric current charged in the battery.
摘要翻译：一种车辆驱动控制装置，包括电动机，电池，具有从电池供给的直流电的逆变器，其中逆变器将直流电转换成交流电，并将交流电流提供给电动机;以及控制器，其发送驱动信号到逆变器，以执行弱磁场控制，其中在不允许执行弱磁场控制时提供给电池的充电电流被设置为小于指示最大值的过充电电流在电池中充电的电流。

84. 发明申请

US20060208327A1 Acceleration sensor and method of manufacturing acceleration sensor 有权
公开(公告)号：US20060208327A1
公开(公告)日：2006-09-21
申请号：US11440400
申请日：2006-05-25
申请人： Yasuo Yamaguchi
发明人： Yasuo Yamaguchi
IPC分类号： G01P15/08
CPC分类号： B81C1/00269 , B81B2201/0235 , B81C2203/0109 , B81C2203/019 , B81C2203/031 , G01P1/023 , G01P15/0802 , G01P15/125 , G01P2015/0814 , H01L2224/05554 , H01L2224/48091 , H01L2224/48137 , H01L2224/49171 , H01L2924/00014
摘要： An acceleration sensor includes a semiconductor substrate, a sensing element formed on the semiconductor substrate, a bonding frame made of polysilicon which is formed on the semiconductor substrate and surrounds the sensing element, and a glass cap which is bonded to a top surface of the bonding frame made of polysilicon to cover the sensing element above the sensing element while being spaced by a predetermined distance from the sensing element. The bonding frame made of polysilicon is not doped with any impurity.

85. 发明授权

US07071549B2 Acceleration sensor and method of manufacturing acceleration sensor 有权
公开(公告)号：US07071549B2
公开(公告)日：2006-07-04
申请号：US11219715
申请日：2005-09-07
申请人： Yasuo Yamaguchi
发明人： Yasuo Yamaguchi
IPC分类号： H01L23/12 , G01P15/00
CPC分类号： B81C1/00269 , B81B2201/0235 , B81C2203/0109 , B81C2203/019 , B81C2203/031 , G01P1/023 , G01P15/0802 , G01P15/125 , G01P2015/0814 , H01L2224/05554 , H01L2224/48091 , H01L2224/48137 , H01L2224/49171 , H01L2924/00014
摘要： An acceleration sensor includes a semiconductor substrate, a sensing element formed on the semiconductor substrate, a bonding frame made of polysilicon which is formed on the semiconductor substrate and surrounds the sensing element, and a glass cap which is bonded to a top surface of the bonding frame made of polysilicon to cover the sensing element above the sensing element while being spaced by a predetermined distance from the sensing element. The bonding frame made of polysilicon is not doped with any impurity.

86. 发明申请

US20050126290A1 Acceleration sensor and method of manufacturing acceleration sensor 有权
公开(公告)号：US20050126290A1
公开(公告)日：2005-06-16
申请号：US10859218
申请日：2004-06-03
申请人： Yasuo Yamaguchi
发明人： Yasuo Yamaguchi
IPC分类号： G01P15/00 , G01P15/08 , G01P15/125 , H01L23/12 , H01L29/84
CPC分类号： B81C1/00269 , B81B2201/0235 , B81C2203/0109 , B81C2203/019 , B81C2203/031 , G01P1/023 , G01P15/0802 , G01P15/125 , G01P2015/0814 , H01L2224/05554 , H01L2224/48091 , H01L2224/48137 , H01L2224/49171 , H01L2924/00014
摘要： An acceleration sensor includes a semiconductor substrate, a sensing element formed on the semiconductor substrate, a bonding frame made of polysilicon which is formed on the semiconductor substrate and surrounds the sensing element, and a glass cap which is bonded to a top surface of the bonding frame made of polysilicon to cover the sensing element above the sensing element while being spaced by a predetermined distance from the sensing element. The bonding frame made of polysilicon is not doped with any impurity.

87. 发明授权

US06906442B2 Motor that utilizes the magnetic torque 失效
公开(公告)号：US06906442B2
公开(公告)日：2005-06-14
申请号：US10603867
申请日：2003-06-26
申请人： Yasuo Yamaguchi
发明人： Yasuo Yamaguchi
IPC分类号： H02K1/22 , H02K1/27 , H02K19/06 , H02K21/14 , H02K21/12
CPC分类号： H02K1/246 , B60L7/14 , B60L11/12 , B60L15/20 , B60L2210/40 , B60L2220/14 , B60L2220/16 , B60L2220/50 , B60L2240/421 , B60L2240/423 , B60L2240/441 , B60L2270/142 , H02K1/276 , H02K19/06 , H02K21/14 , Y02T10/641 , Y02T10/645 , Y02T10/7077 , Y02T10/7241 , Y02T10/7275
摘要： A motor has a rotatably supported rotor core and permanent magnets disposed at equal intervals at a plurality of positions in a circumferential direction of the rotor core. The rotor core has projecting poles formed at equal intervals at a center between each permanent magnet. Furthermore, an opening angle center line of each projecting pole conforms to a center line of an angle created by each opening angle center line of two adjacent permanent magnets. Additionally, each projecting pole is shaped asymmetrical to a line connecting a center of the projecting pole in the rotational direction of the rotor core and an axis center of the rotor core.

88. 发明申请

US20050046369A1 Electric drive control apparatus, electric drive control method and program thereof 失效
标题翻译：电驱动控制装置，电驱动控制方法及程序
公开(公告)号：US20050046369A1
公开(公告)日：2005-03-03
申请号：US10920160
申请日：2004-08-18
申请人： Yasuhiko Kobayashi , Yasuo Yamaguchi
发明人： Yasuhiko Kobayashi , Yasuo Yamaguchi
IPC分类号： B60L9/18 , H02M7/48 , H02P7/00 , H02P21/00 , H02P27/04
CPC分类号： B60L15/025 , B60L2220/14 , H02P21/06 , Y02T10/643
摘要： An electric drive control apparatus for an electric machine, includes a controller that computes an instruction value based on an electric machine rotational speed and a target electric machine torque that represents a target value of an electric machine torque, generates a drive signal based on the instruction value, computes a voltage saturation variable that represents a likelihood of an occurrence of a voltage saturation, determines whether a switch condition for switching a control between an asynchronous PWM control and a synchronous PWM control is met based on the voltage saturation variable, and selects and outputs the drive signal and switches the control between the asynchronous PWM control and the synchronous PWM control based on a determination as to the switch condition.
摘要翻译：一种用于电机的电驱动控制装置，包括：计算基于电机转速的指示值和表示电机转矩的目标值的目标电机转矩的控制器，基于该指令生成驱动信号值，计算表示发生电压饱和的可能性的电压饱和度变量，基于电压饱和度变量确定是否满足用于切换异步PWM控制和同步PWM控制之间的控制的开关条件，并且选择和输出驱动信号，并根据关于开关条件的判定，在异步PWM控制和同步PWM控制之间切换控制。

89. 发明申请

US20050044953A1 Acceleration sensor 失效
标题翻译：加速度传感器
公开(公告)号：US20050044953A1
公开(公告)日：2005-03-03
申请号：US10816812
申请日：2004-04-05
申请人： Yasuo Yamaguchi , Kunihiro Nakamura
发明人： Yasuo Yamaguchi , Kunihiro Nakamura
IPC分类号： B81B7/00 , G01P1/02 , G01P15/08 , G01P15/125 , H01L29/84 , B65H54/00
CPC分类号： B81B7/0051 , B81B2201/0235 , B81C2203/0109 , G01P1/026 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： An acceleration sensor includes an acceleration sensor element and a frame portion surrounding the element. The sensor element and the frame portion are located on a major surface of a substrate. An intermediate layer is formed on the frame portion. A cap portion is bonded to the intermediate layer, thereby sealing-off the acceleration sensor element. Grooves in the form of a frame are provided in the frame portion and the intermediate layer, respectively, and located at positions generally identical to each other with regard to the major surface direction of the substrate.
摘要翻译：加速度传感器包括加速度传感器元件和围绕元件的框架部分。传感器元件和框架部分位于基板的主表面上。在框架部分上形成中间层。帽部结合到中间层，从而密封加速度传感器元件。框架形式的槽分别设置在框架部分和中间层中，并且位于相对于基板的主表面方向彼此大致相同的位置处。

90. 发明授权

US06713804B2 TFT with a negative substrate bias that decreases in time 失效
标题翻译：具有负的衬底偏置的TFT在时间上减小
公开(公告)号：US06713804B2
公开(公告)日：2004-03-30
申请号：US10199173
申请日：2002-07-22
申请人： Yuuichi Hirano , Takuji Matsumoto , Yasuo Yamaguchi
发明人： Yuuichi Hirano , Takuji Matsumoto , Yasuo Yamaguchi
IPC分类号： H01L27108
CPC分类号： H01L29/78648 , H01L27/1203 , H01L29/78615 , Y10S257/901
摘要： A voltage applying section (32) is connected to a silicon substrate (1). Emission of radiation to a semiconductor device causes a large number of holes to accumulate within a BOX layer (2) in the vicinity of the interface with respect to a silicon layer (3). The amount of accumulation of holes increases with a lapse of time. A voltage applying section (32) applies a negative voltage which decreases with the lapse of time to the silicon substrate (1) in order to cancel out a positive electric field resulting from the accumulated holes. The voltage applying section (32) includes a time counter (30) for detecting the lapse of time and a voltage generating section (31) connected to the silicon substrate (1) for generating a negative voltage (V1) which decreases in proportion to the lapse of time based on the result of detection (time T) carried out by the time counter (30). Consequently, a semiconductor device capable of suppressing occurrence of total dose effects is obtained.
摘要翻译：电压施加部分（32）连接到硅衬底（1）。辐射到半导体器件的辐射导致大量孔相对于硅层（3）在界面附近的BOX层（2）内积累。孔的积聚量随时间的推移而增加。电压施加部分（32）将随着时间的流逝减小的负电压施加到硅衬底（1）上，以抵消由累积的孔产生的正电场。电压施加部分（32）包括用于检测经过时间的时间计数器（30）和连接到硅衬底（1）的电压产生部分（31），用于产生与基于由时间计数器（30）执行的检测结果（时间T）的时间逝去。因此，获得能够抑制总剂量效应的发生的半导体装置。

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