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81. 发明申请

US20120056224A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20120056224A1
公开(公告)日：2012-03-08
申请号：US13214377
申请日：2011-08-22
申请人： Iwao MITSUISHI , Shinya Nunoue , Takahiro Sato , Yumi Fukuda , Aoi Okada , Naotoshi Matsuda , Toshiki Hikosaka , Keiko Albessard , Masahiro Kato
发明人： Iwao MITSUISHI , Shinya Nunoue , Takahiro Sato , Yumi Fukuda , Aoi Okada , Naotoshi Matsuda , Toshiki Hikosaka , Keiko Albessard , Masahiro Kato
IPC分类号： H01L33/50
CPC分类号： H01L33/504 , C09K11/0883 , C09K11/7734 , H01L33/505 , H01L2224/45144 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element.
摘要翻译：根据一个实施例的发光器件包括发射波长为380nm至470nm的光的发光元件; 设置在发光元件上的CASN第一红色荧光体; 设置在发光元件上的赛隆第二红色磷光体; 以及设置在发光元件上的赛隆绿荧光体。

82. 发明申请

US20120056157A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120056157A1
公开(公告)日：2012-03-08
申请号：US13222500
申请日：2011-08-31
申请人： Toshiki Hikosaka , Koichi Tachibana , Hajime Nago , Shinya Nunoue
发明人： Toshiki Hikosaka , Koichi Tachibana , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0075 , H01L33/32 , H01S5/305 , H01S5/3407 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer.
摘要翻译：根据一个实施例，半导体发光器件包括n型层，p型层和设置在n型层和p型层之间并包括势垒层和阱层的发光单元。阻挡层中的至少一个包括第一和第二部分层。第一部分层设置在n型层的一侧。第二部分层设置在p型层的一侧，并且包含浓度高于第一部分层中的n型杂质。阱层中的至少一个包括第三和第四部分层。第三部分层设置在n型层的一侧。第四部分层设置在p型层的一侧，并且包含浓度高于第三部分层的n型杂质。

83. 发明授权

US09048362B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09048362B2
公开(公告)日：2015-06-02
申请号：US13405565
申请日：2012-02-27
申请人： Shigeya Kimura , Yoshiyuki Harada , Hajime Nago , Koichi Tachibana , Shinya Nunoue
发明人： Shigeya Kimura , Yoshiyuki Harada , Hajime Nago , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/06 , H01L33/32 , B82Y20/00 , H01S5/343 , H01S5/34
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/12 , H01L33/32 , H01S5/3408 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing III group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.
摘要翻译：根据一个实施例，半导体发光器件包括含有氮化物半导体和发光层的n型和p型半导体层。发光层包括含有III族元素的阻挡层，以及与阻挡层堆叠并含有III族元素的阱层。阻挡层被分为n型半导体层侧的第一部分和p型半导体层侧的第二部分，第二部分的III族元素中的In组成比低于第一部分一部分。阱层被分为n型半导体层侧的第三部分和p型半导体层侧的第四部分，第四部分的III族元素中的In组成比高于第三部分的第三部分一部分。

84. 发明申请

US20100148203A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100148203A1
公开(公告)日：2010-06-17
申请号：US12638354
申请日：2009-12-15
申请人： Rei HASHIMOTO , Yasushi Hattori , Takahiro Sato , Jongil Hwang , Maki Sugai , Yoshiyuki Harada , Shinji Saito , Shinya Nunoue
发明人： Rei HASHIMOTO , Yasushi Hattori , Takahiro Sato , Jongil Hwang , Maki Sugai , Yoshiyuki Harada , Shinji Saito , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/507 , H01L33/644 , H01S5/02292 , H01S5/32341
摘要： There is provided a semiconductor light-emitting device including a semiconductor light-emitting element, a phosphor layer disposed in a light path of a light emitted from the semiconductor light-emitting element, containing a phosphor to be excited by the light and having a cross-section in a region of a diameter which is 1 mm larger than that of a cross-section of the light path, and a heat-releasing member disposed in contact with at least a portion of the phosphor layer and exhibiting a higher thermal conductance than that of the phosphor layer.
摘要翻译：提供了一种半导体发光器件，其包括半导体发光元件，荧光体层，其设置在从半导体发光元件发射的光的光路中，该荧光体层含有被光激发的荧光体并具有十字形在比直径大于光路截面1mm的区域的区域，以及与至少一部分荧光体层接触并且显示出比较高的导热性的散热构件荧光体层的。

85. 发明授权

US08450918B2 Light-emitting apparatus, display apparatus, and light emitter 失效
标题翻译：发光装置，显示装置和发光体
公开(公告)号：US08450918B2
公开(公告)日：2013-05-28
申请号：US12874778
申请日：2010-09-02
申请人： Shinji Saito , Yasushi Hattori , Yoshiyuki Harada , Shinya Nunoue
发明人： Shinji Saito , Yasushi Hattori , Yoshiyuki Harada , Shinya Nunoue
IPC分类号： F21V9/16 , G02B26/00
CPC分类号： G03B21/204 , F21K9/232 , F21K9/64 , H01L33/504
摘要： According to the embodiments, an easy-to-fabricate light-emitting apparatus is provided in which a plurality of phosphors is disposed so as not to overlap each other. The light-emitting apparatus includes a light source that emits excitation light; a substrate having a protrusion and recess configuration where first planes and second planes which intersect the first planes are formed periodically; first phosphor layers formed on the first planes and absorbing the excitation light to emit a first fluorescence; and second phosphor layers formed on the second planes and absorbing the excitation light to emit a second fluorescence with a wavelength different from that of the first fluorescence.
摘要翻译：根据实施例，提供了一种易于制造的发光装置，其中多个荧光体被布置为不彼此重叠。发光装置包括发射激发光的光源; 具有突起和凹部构造的基板，其中周期性地形成与第一平面相交的第一平面和第二平面; 形成在第一平面上并吸收激发光以发射第一荧光的第一荧光体层; 以及形成在所述第二平面上并吸收所述激发光以发射具有与所述第一荧光的波长不同的波长的第二荧光的第二荧光体层。

86. 发明申请

US20130087761A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
公开(公告)号：US20130087761A1
公开(公告)日：2013-04-11
申请号：US13405565
申请日：2012-02-27
申请人： Shigeya KIMURA , Yoshiyuki Harada , Hajime Nago , Koichi Tachibana , Shinya Nunoue
发明人： Shigeya KIMURA , Yoshiyuki Harada , Hajime Nago , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/12 , H01L33/32 , H01S5/3408 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containingIII group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.

87. 发明申请

US20100187497A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20100187497A1
公开(公告)日：2010-07-29
申请号：US12716668
申请日：2010-03-03
申请人： Hajime NAGO , Koichi Tachibana , Shinji Saito , Yoshiyuki Harada , Shinya Nunoue
发明人： Hajime NAGO , Koichi Tachibana , Shinji Saito , Yoshiyuki Harada , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L33/06
摘要： A semiconductor device includes an underlying layer, and a light emitting layer which is formed on the underlying layer and in which a barrier layer made of InAlGaN and a quantum well layer made of InGaN are alternately stacked.
摘要翻译：半导体器件包括下层，并且形成在下层上并且其中由InAlGaN制成的势垒层和由InGaN制成的量子阱层的发光层交替堆叠。

88. 发明申请

US20110222149A1 LIGHT-EMITTING APPARATUS, DISPLAY APPARATUS, LIGHT EMITTER, AND METHOD OF FABRICATING LIGHT EMITTER 失效
标题翻译：发光装置，显示装置，发光体和制造发光体的方法
公开(公告)号：US20110222149A1
公开(公告)日：2011-09-15
申请号：US12874778
申请日：2010-09-02
申请人： Shinji SAITO , Yasushi Hattori , Yoshiyuki Harada , Shinya Nunoue
发明人： Shinji SAITO , Yasushi Hattori , Yoshiyuki Harada , Shinya Nunoue
IPC分类号： G03B21/56 , F21V9/16 , H01J1/62 , B05D5/00
CPC分类号： G03B21/204 , F21K9/232 , F21K9/64 , H01L33/504
摘要： According to the embodiments, an easy-to-fabricate light-emitting apparatus is provided in which a plurality of phosphors is disposed so as not to overlap each other. The light-emitting apparatus includes a light source that emits excitation light; a substrate having a protrusion and recess configuration where first planes and second planes which intersect the first planes are formed periodically; first phosphor layers formed on the first planes and absorbing the excitation light to emit a first fluorescence; and second phosphor layers formed on the second planes and absorbing the excitation light to emit a second fluorescence with a wavelength different from that of the first fluorescence.
摘要翻译：根据实施例，提供了一种易于制造的发光装置，其中多个荧光体被布置为不彼此重叠。发光装置包括发射激发光的光源; 具有突起和凹部构造的基板，其中周期性地形成与第一平面相交的第一平面和第二平面; 形成在第一平面上并吸收激发光以发射第一荧光的第一荧光体层; 以及形成在所述第二平面上并吸收所述激发光以发射具有与所述第一荧光的波长不同的波长的第二荧光的第二荧光体层。

89. 发明授权

US07985981B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US07985981B2
公开(公告)日：2011-07-26
申请号：US12638354
申请日：2009-12-15
申请人： Rei Hashimoto , Yasushi Hattori , Takahiro Sato , Jongil Hwang , Maki Sugai , Yoshiyuki Harada , Shinji Saito , Shinya Nunoue
发明人： Rei Hashimoto , Yasushi Hattori , Takahiro Sato , Jongil Hwang , Maki Sugai , Yoshiyuki Harada , Shinji Saito , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/58
CPC分类号： H01L33/507 , H01L33/644 , H01S5/02292 , H01S5/32341
摘要： There is provided a semiconductor light-emitting device including a semiconductor light-emitting element, a phosphor layer disposed in a light path of a light emitted from the semiconductor light-emitting element, containing a phosphor to be excited by the light and having a cross-section in a region of a diameter which is 1 mm larger than that of a cross-section of the light path, and a heat-releasing member disposed in contact with at least a portion of the phosphor layer and exhibiting a higher thermal conductance than that of the phosphor layer.
摘要翻译：提供了一种半导体发光器件，其包括半导体发光元件，荧光体层，其设置在从半导体发光元件发射的光的光路中，该荧光体层含有被光激发的荧光体并具有十字形在比直径大于光路截面1mm的区域的区域，以及与至少一部分荧光体层接触并且显示出比较高的导热性的散热构件荧光体层的。

90. 发明授权

US09105810B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09105810B2
公开(公告)日：2015-08-11
申请号：US13404607
申请日：2012-02-24
申请人： Toshihide Ito , Hiroshi Katsuno , Shinya Nunoue
发明人： Toshihide Ito , Hiroshi Katsuno , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/32 , H01L33/40
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/405 , H01L33/44 , H01L2933/0016 , H01L2933/0025
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，发光单元，第二半导体层，反射电极，氧化物层和含氮层。第一半导体层是第一导电类型。发光单元设置在第一半导体层上。第二半导体层设置在发光单元上并且是第二导电类型。反射电极设置在第二半导体层上并且包括Ag。氧化物层设置在反射电极上。氧化物层是绝缘的并且具有第一开口。含氧层设置在氧化物层上。含氮层是绝缘的，并且具有与第一开口连通的第二开口。

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