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81. 发明授权

US08494433B2 Recording-medium positioning device and image forming apparatus employing the device 有权
公开(公告)号：US08494433B2
公开(公告)日：2013-07-23
申请号：US12457738
申请日：2009-06-19
申请人： Takeshi Uchida , Kiyomi Tsuchiya
发明人： Takeshi Uchida , Kiyomi Tsuchiya
IPC分类号： B65H9/00 , G03G21/00
CPC分类号： G03G15/6567 , G03G15/6564 , G03G2215/00409 , G03G2215/00565 , G03G2215/00616
摘要： A recording-medium positioning device includes a gate, a roller pair, a roller-pair shift unit, a recording-medium detector, and a drive control device. The gate is disposed at an upstream side of a fixing device in a conveyance direction of a recording medium. The roller pair includes two roller members disposed at an upstream side of the gate. The roller-pair shift unit moves the roller pair in accordance with a first position of the recording medium in the conveyance direction to shift the recording medium in a width direction perpendicular to the conveyance direction. The recording-medium detector is disposed between the fixing device and the gate to detect a second position of the recording medium in the width direction. The drive control device moves the recording medium to a reference position by driving the roller-pair shift unit in accordance with the second position and cyclically shifts the reference position.

82. 发明授权

US08416826B2 Photonic crystal surface emitting laser 有权
标题翻译：光子晶体表面发射激光
公开(公告)号：US08416826B2
公开(公告)日：2013-04-09
申请号：US13061983
申请日：2010-04-08
申请人： Yasuhiro Nagatomo , Takeshi Uchida
发明人： Yasuhiro Nagatomo , Takeshi Uchida
IPC分类号： H01S5/00
CPC分类号： H01S5/2027 , H01S5/1039 , H01S5/105 , H01S5/18319
摘要： The present invention provides a photonic crystal surface emitting laser with which an arbitrary beam shape can be obtained and which enables design with a high degree of freedom. The surface emitting laser including a photonic crystal having a resonance mode in an in-plane direction parallel to a substrate includes a reflecting mirror for reflecting light emitted from the photonic crystal in a normal direction of the substrate and a spacer layer interposed between the reflecting mirror and the photonic crystal, wherein a nonuniform in-plane distribution is provided to the characteristics of one of the reflecting mirror and the spacer layer, so that a Q-value, which is a resonator characteristic in the normal direction of the substrate in the surface emitting laser, has a nonuniform in-plane distribution.
摘要翻译：本发明提供一种可以获得任意波束形状的光子晶体表面发射激光器，并且能够以高自由度进行设计。包括具有平行于衬底的面内方向的共振模式的光子晶体的表面发射激光器包括：反射镜，用于反射沿着基板的法线方向从光子晶体发射的光;以及间隔层，其设置在反射镜之间和光子晶体，其中对反射镜和间隔层之一的特性提供不均匀的面内分布，使得作为表面中的基板的法线方向的共振器特性的Q值发射激光器具有不均匀的面内分布。

83. 发明申请

US20120327422A1 SEMICONDUCTOR OPTICAL INTEGRATED DEVICE AND OPTICAL COHERENCE TOMOGRAPHIC IMAGING APPARATUS PROVIDED WITH THE SEMICONDUCTOR OPTICAL INTEGRATED DEVICE 审中-公开
标题翻译：半导体光学集成器件和半导体光学集成器件提供的光学相干成像设备
公开(公告)号：US20120327422A1
公开(公告)日：2012-12-27
申请号：US13523107
申请日：2012-06-14
申请人： Yasuhisa Inao , Mamoru Uchida , Takeshi Uchida
发明人： Yasuhisa Inao , Mamoru Uchida , Takeshi Uchida
IPC分类号： H01L31/12 , G01B9/02 , H01L33/04
CPC分类号： H01L27/15 , G01B9/02051 , G01B9/02091 , G02B6/12004 , H01L33/0045
摘要： Provided is a semiconductor optical integrated device, formed by arranging a light emitting element and a light detecting element in a plane of the same substrate, each formed by laminating layers which at least include a first clad layer of a first conductive type, an active layer and a second clad layer of a second conductive type on a substrate, wherein the active layer has a structure where a second active area of a conductive type and an undoped first active area are laminated, and the second active area has the same conductive type as that of the first or second clad layer laminated in the closest position to the second active area. This device suppresses heat generation due to increased operating current and unnecessary light generation at an operation of the light emitting element, and enhancing light absorption efficiency at the an operation of the light emitting element.
摘要翻译：提供了一种半导体光学集成器件，其通过将发光元件和光检测元件布置在同一衬底的平面中而形成，每个通过层压层形成，所述层至少包括第一导电类型的第一覆盖层，有源层以及在基板上具有第二导电类型的第二覆盖层，其中所述有源层具有其中层叠有导电类型的第二有源区和未掺杂的第一有源区的结构，并且所述第二有源区具有与第一或第二包覆层的层压在与第二有效区最接近的位置。该装置抑制由于工作电流的增加和发光元件的动作引起的不必要的光的产生，并且提高了发光元件的动作时的光吸收效率。

84. 发明授权

US08340149B2 Vertical cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光
公开(公告)号：US08340149B2
公开(公告)日：2012-12-25
申请号：US12817514
申请日：2010-06-17
申请人： Takeshi Uchida
发明人： Takeshi Uchida
IPC分类号： H01S5/00
CPC分类号： H01S5/18361 , H01S5/18386 , H01S2301/166
摘要： A vertical cavity surface emitting laser includes, a lower DBR layer; an upper DBR layer; an active layer existing between the lower DBR layer and the upper DBR layer; and a laser emitting region provided on a surface layer of the upper DBR layer, in which the upper DBR layer includes a doped first semiconductor multilayer film layer and an undoped second semiconductor multilayer film layer; an electrode provided on the upper DBR layer is formed in a region which is on an upper part of the first semiconductor multilayer film layer and is surrounded by the second semiconductor multilayer film layer; the laser emitting region is formed on a surface layer of the second semiconductor multilayer film layer; and the surface layer of the first semiconductor multilayer film layer is formed by a contact layer and the second semiconductor multilayer film layer is stacked on the contact layer.
摘要翻译：垂直腔表面发射激光器包括下DBR层; 上DBR层; 存在于下DBR层和上DBR层之间的活性层; 以及设置在上DBR层的表面层上的激光发射区域，其中上DBR层包括掺杂的第一半导体多层膜层和未掺杂的第二半导体多层膜层; 设置在上DBR层上的电极形成在第一半导体多层膜层的上部并被第二半导体多层膜层包围的区域中; 激光发射区形成在第二半导体多层膜层的表面层上; 并且第一半导体多层膜层的表面层由接触层形成，并且第二半导体多层膜层堆叠在接触层上。

85. 发明授权

US08310140B2 Airtight container and image displaying apparatus using the same 失效
标题翻译：气密容器和使用其的图像显示装置
公开(公告)号：US08310140B2
公开(公告)日：2012-11-13
申请号：US12834086
申请日：2010-07-12
申请人： Takeshi Uchida
发明人： Takeshi Uchida
IPC分类号： H01J1/88
CPC分类号： H01J29/86 , H01J29/864 , H01J31/127
摘要： An airtight container includes a front substrate, a rear substrate opposite to the front substrate, a plurality of spacers arranged between the front substrate and the rear substrate with the spacers having a predetermined interval therebetween, and a frame provided between the front substrate and the rear substrate and surrounding the plurality of spacers, and of which an internal space surrounded by the front substrate, the rear substrate and the frame is maintained at pressure lower than atmospheric pressure, wherein both the front substrate and the rear substrate are made from glass material, the airtight container satisfies H1
摘要翻译：密封容器包括前基板，与前基板相对的后基板，布置在前基板和后基板之间的间隔件，间隔件之间具有预定间隔，并且设置在前基板和后基板之间的框架衬底并且围绕多个间隔件，并且其中由前基板，后基板和框架围绕的内部空间保持在低于大气压力的压力下，其中前基板和后基板都由玻璃材料制成，气密容器满足H1

86. 发明申请

US20120114005A1 SURFACE-EMITTING LASER AND SURFACE-EMITTING LASER ARRAY, METHOD OF MANUFACTURING A SURFACE-EMITTING LASER AND METHOD OF MANUFACTURING A SURFACE-EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING A SURFACE-EMITTING LASER ARRAY 失效
标题翻译：表面发射激光和表面发射激光阵列，制造表面发射激光的方法和制造表面发射激光阵列的方法以及包括表面发射激光阵列的光学装置
公开(公告)号：US20120114005A1
公开(公告)日：2012-05-10
申请号：US13286973
申请日：2011-11-01
申请人： Yasuhisa Inao , Tatsuro Uchida , Takeshi Uchida
发明人： Yasuhisa Inao , Tatsuro Uchida , Takeshi Uchida
IPC分类号： H01S5/125 , H01L21/18
CPC分类号： H01S5/18391 , H01S5/18313 , H01S2301/166 , H01S2301/176
摘要： Provided is a method of manufacturing a surface-emitting laser capable of preventing characteristics fluctuations within the plane and among wafers and oscillating in a single fundamental transverse mode. The method includes after performing selective oxidation: exposing a bottom face of a surface relief structure by etching a second semiconductor layer with a first semiconductor layer where a pattern of the surface relief structure has been formed as an etching mask and a third semiconductor layer as an etching stop layer; and exposing a top face of the surface relief structure by etching the first semiconductor layer where the pattern of the surface relief structure has been formed, with the second semiconductor layer and the third semiconductor layer as etching stop layer.
摘要翻译：提供一种制造表面发射激光器的方法，其能够防止平面内和晶片之间的特性波动并且以单个基本横向模式振荡。该方法包括在执行选择氧化之后：通过用形成有表面浮雕结构的图案的第一半导体层蚀刻第二半导体层来暴露表面起伏结构的底面作为蚀刻掩模，并且将第三半导体层作为蚀刻停止层; 并且通过蚀刻形成有所述表面浮雕结构的图案的第一半导体层，以所述第二半导体层和所述第三半导体层为蚀刻停止层，使所述表面起伏结构的顶面露出。

87. 发明申请

US20120106587A1 VERTICAL CAVITY SURFACE EMITTING LASER AND IMAGE FORMING APPARATUS 失效
标题翻译：垂直孔表面发射激光和图像形成装置
公开(公告)号：US20120106587A1
公开(公告)日：2012-05-03
申请号：US13279680
申请日：2011-10-24
申请人： Toshimitsu Matsuu , Takeshi Uchida
发明人： Toshimitsu Matsuu , Takeshi Uchida
IPC分类号： H01S3/08
CPC分类号： H01S5/18358 , B82Y20/00 , H01S5/0654 , H01S5/1221 , H01S5/18311 , H01S5/34326
摘要： Provided is a vertical cavity surface emitting laser that includes a plurality of laminated semiconductor layers including an active layer and that oscillates at a wavelength λ1, wherein a resonator is formed by upper and lower multilayer reflecting mirrors has a structure that generates a longitudinal multimode, and the first active layer is arranged at a position shifted from a standing wave loop of the first longitudinal mode. According to the vertical cavity surface emitting laser capable of suppressing oscillation of the second longitudinal mode with a large gain and capable of single longitudinal mode oscillation based on the first longitudinal mode, the longitudinal mode spacing is narrowed by increasing the length of the resonator for single transverse mode oscillation at a high output, and the single longitudinal mode oscillation is possible even if longitudinal multimode oscillation occurs.
摘要翻译：提供了一种垂直腔表面发射激光器，其包括多个层叠半导体层，包括有源层并且以波长λ1振荡，其中由上下多层反射镜形成的谐振器具有产生纵向多模的结构，第一有源层布置在从第一纵向模式的驻波环路偏移的位置处。根据能够以大的增益抑制第二纵模的振荡的垂直腔表面发射激光器，并且能够基于第一纵向模式而能够进行单纵模振荡，通过增加单谐振器的长度来缩小纵模间距即使产生纵向多模振荡，也可以在高输出时进行横模振荡。

88. 发明授权

US08149892B2 Structure having photonic crystal and surface-emitting laser 有权
标题翻译：具有光子晶体和表面发射激光器的结构
公开(公告)号：US08149892B2
公开(公告)日：2012-04-03
申请号：US12183122
申请日：2008-07-31
申请人： Yasuhiro Nagatomo , Takeshi Uchida
发明人： Yasuhiro Nagatomo , Takeshi Uchida
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： H01S5/18 , H01S5/105 , H01S5/20 , H01S5/42 , H01S2301/14
摘要： In a structure having a two-dimensional photonic crystal in which structures having different refractive indices are disposed at a two-dimensional period and comprising a structure emitting in a direction perpendicular to a resonance direction of light propagating in the in-plane direction of the two-dimensional photonic crystal, wherein the structure comprises a one-dimensional photonic crystal in which components having different refractive indices are arranged at a one-dimensional period, and, the light propagating in the in-plane direction of the two-dimensional photonic crystal is reflected by a photonic band edge of the one-dimensional photonic crystal.
摘要翻译：在具有二维光子晶体的结构中，其中具有不同折射率的结构被设置在二维周期，并且包括沿垂直于在两个方向上的平面内方向传播的光的谐振方向垂直的方向发射的结构其中所述结构包括一维光子晶体，其中具有不同折射率的分量以一维周期排列，并且在二维光子晶体的面内方向上传播的光是由一维光子晶体的光子带边缘反射。

89. 发明申请

US20100331361A1 PHARMACEUTICAL COMPOSITION CONTAINING ALPHA-ADRENERGIC RECEPTOR ANTAGONIST AND AN ANTI-MUSCARINIC AGENT AND METHOD OF IMPROVING LOWER URINARY TRACT SYMPTOMS ASSOCIATED WITH PROSTATIC HYPERTROPHY 审中-公开
标题翻译：含有ALPHA-ADRENERGIC RECEPTOR ANTAGONIST和ANTI-MUSCARINIC AGENT的药物组合物和改善与前列腺素相关的下尿路症状的方法
公开(公告)号：US20100331361A1
公开(公告)日：2010-12-30
申请号：US12688426
申请日：2010-01-15
申请人： Hidehiro Kakizaki , Masaki Yoshida , Takeshi Uchida , Karin Juliette van Charldorp , Brigitte Johanna Fanny Bosman , Monique Maria Alida Klaver , Alberto Garcia Hernandez , Tennis Edwin Drogendijk
发明人： Hidehiro Kakizaki , Masaki Yoshida , Takeshi Uchida , Karin Juliette van Charldorp , Brigitte Johanna Fanny Bosman , Monique Maria Alida Klaver , Alberto Garcia Hernandez , Tennis Edwin Drogendijk
IPC分类号： A61K31/4725 , A61P13/02
CPC分类号： A61K31/18 , A61K31/4725 , A61K2300/00
摘要： A pharmaceutical composition including active ingredients of (R)-5-(2-{[2-(2-ethoxyphenoxy)ethyl]amino}propyl-2-methoxybenzene-1-sulfonamide and (1S)-1-phenyl-1,2,3,4-tetrahydroisoquinoline-2-carboxylic acid (3R)-quinuclidin-3-yl ester, or their pharmaceutically acceptable salts, provides improvement of lower urinary tract symptoms associated with prostatic hypertrophy. The active ingredients may be administered either simultaneously or at a time interval. The pharmaceutical composition also provides significant improvement of lower urinary tract symptoms associated with benign prostatic hyperplasia having a substantial storage component.
摘要翻译：包含（R）-5-（2 - {[2-（2-乙氧基苯氧基）乙基]氨基}丙基-2-甲氧基苯-1-磺酰胺的活性成分和（1S）-1-苯基-1,2 ，3,4-四氢异喹啉-2-羧酸（3R） - 奎宁环-3-基酯或其药学上可接受的盐提供与前列腺肥大相关的下尿路症状的改善。活性成分可以同时或在药物组合物还具有与具有大量储存组分的良性前列腺增生相关的下尿路症状的显着改善。

90. 发明申请

US20100322277A1 VERTICAL CAVITY SURFACE EMITTING LASER 有权
标题翻译：垂直孔表面发射激光
公开(公告)号：US20100322277A1
公开(公告)日：2010-12-23
申请号：US12817514
申请日：2010-06-17
申请人： Takeshi Uchida
发明人： Takeshi Uchida
IPC分类号： H01S5/12 , H01S5/42
CPC分类号： H01S5/18361 , H01S5/18386 , H01S2301/166
摘要： A vertical cavity surface emitting laser includes, a lower DBR layer; an upper DBR layer; an active layer existing between the lower DBR layer and the upper DBR layer; and a laser emitting region provided on a surface layer of the upper DBR layer, in which the upper DBR layer includes a doped first semiconductor multilayer film layer and an undoped second semiconductor multilayer film layer; an electrode provided on the upper DBR layer is formed in a region which is on an upper part of the first semiconductor multilayer film layer and is surrounded by the second semiconductor multilayer film layer; the laser emitting region is formed on a surface layer of the second semiconductor multilayer film layer; and the surface layer of the first semiconductor multilayer film layer is formed by a contact layer and the second semiconductor multilayer film layer is stacked on the contact layer.
摘要翻译：垂直腔表面发射激光器包括下DBR层; 上DBR层; 存在于下DBR层和上DBR层之间的活性层; 以及设置在上DBR层的表面层上的激光发射区域，其中上DBR层包括掺杂的第一半导体多层膜层和未掺杂的第二半导体多层膜层; 设置在上DBR层上的电极形成在第一半导体多层膜层的上部并被第二半导体多层膜层包围的区域中; 激光发射区形成在第二半导体多层膜层的表面层上; 并且第一半导体多层膜层的表面层由接触层形成，并且第二半导体多层膜层堆叠在接触层上。

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