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81. 发明授权

US08350372B2 Semiconductor device including a DC-DC converter 有权
标题翻译：包括DC-DC转换器的半导体器件
公开(公告)号：US08350372B2
公开(公告)日：2013-01-08
申请号：US13372227
申请日：2012-02-13
申请人： Yukihiro Satou , Tomoaki Uno , Nobuyoshi Matsuura , Masaki Shiraishi
发明人： Yukihiro Satou , Tomoaki Uno , Nobuyoshi Matsuura , Masaki Shiraishi
IPC分类号： H01L23/495
CPC分类号： H01L23/5386 , H01L23/49575 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L29/4175 , H01L2224/05554 , H01L2224/0603 , H01L2224/29339 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/4943 , H01L2224/83855 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/20753 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , H05K7/02 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/2075 , H01L2924/20754
摘要： The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.
摘要翻译：本发明提供一种具有电路的非绝缘型DC-DC转换器，其中用于高侧开关的功率MOS•FET和低边开关的功率MOS•FET串联连接。在非绝缘型DC-DC转换器中，用于高侧开关的功率晶体管，低边开关的功率晶体管和驱动它们的驱动电路分别由不同的半导体芯片构成。三个半导体芯片被容纳在一个封装中，并且包括用于高侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被布置成彼此接近。

82. 发明申请

US20110233664A1 Semiconductor device and a method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110233664A1
公开(公告)日：2011-09-29
申请号：US13067566
申请日：2011-06-09
申请人： Masaki Shiraishi , Yoshito Nakazawa
发明人： Masaki Shiraishi , Yoshito Nakazawa
IPC分类号： H01L29/78
CPC分类号： H01L29/7811 , H01L21/26586 , H01L24/05 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/4236 , H01L29/4238 , H01L29/456 , H01L29/4925 , H01L29/4933 , H01L29/66727 , H01L29/66734 , H01L29/7813 , H01L2224/05552 , H01L2224/0603 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/00
摘要： A technology is provided to reduce ON-resistance, and the prevention of punch through is achieved with respect to a trench gate type power MISFET. Input capacitance and a feedback capacitance are reduced by forming a groove in which a gate electrode is formed so as to have a depth as shallow as about 1 μm or less, a p− type semiconductor region is formed to a depth so as not to cover the bottom of the groove, and a p-type semiconductor region higher in impurity concentration than the p−type semiconductor region is formed under a n+type semiconductor region serving as a source region of the trench gate type power MISFET, causing the p-type semiconductor region to serve as a punch-through stopper layer of the trench gate type power MISFET.
摘要翻译：提供了一种降低导通电阻的技术，并且相对于沟槽栅型功率MISFET实现了穿通的防止。输入电容和反馈电容通过形成栅极形成的沟槽而减小，使得深度为约1μm以下的深度，将ap型半导体区域形成为不覆盖的深度并且在作为沟槽栅型功率MISFET的源极区域的n +型半导体区域之下形成杂质浓度高于p型半导体区域的p型半导体区域，使p型半导体区域半导体区域用作沟槽栅型功率MISFET的穿通阻挡层。

83. 发明授权

US07908128B2 Method for modeling a tire model and simulation method 有权
标题翻译：轮胎模型建模方法和模拟方法
公开(公告)号：US07908128B2
公开(公告)日：2011-03-15
申请号：US11979602
申请日：2007-11-06
申请人： Masaki Shiraishi
发明人： Masaki Shiraishi
IPC分类号： G01N37/00
CPC分类号： G06F17/5095 , B60C99/006 , G06F17/5018
摘要： Modeling a tire model used for a computer simulation of a pneumatic tire with a toroidal main body and a tread pattern by setting a three-dimensional main body model by dividing the main body by an integer M not less than 2 equally in a circumferential direction of the tire using a finite number of elements, setting a three-dimensional pattern model by dividing the tread pattern by an integer M greater than N equally in the circumferential direction of the tire using a finite number of elements, coupling the pattern model with the main body model while aligning each tire rotation axis to make a three-dimensional tire model, and correcting by moving nodal points existing on a radially outer surface of the pattern model such that a thickness of the pattern model measured from a radially outer surface of the main body model in a normal direction becomes constant.
摘要翻译：通过设置三维主体模型，通过将主体在圆周方向上的等分方向分割为不小于2的整数M来建模用于具有环形主体和胎面花纹的充气轮胎的计算机模拟的轮胎模型轮胎使用有限数量的元件，通过使用有限数量的元件在轮胎的圆周方向上将胎面花纹除以大于N的整数M，设定三维花纹模型，将花纹模型与主体同时对准每个轮胎旋转轴线以形成三维轮胎模型，并且通过存在于所述图案模型的径向外表面上的移动节点来校正，使得从主体的径向外表面测量的图案模型的厚度正常方向的身体模型变得不变。

84. 发明申请

US20110037450A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110037450A1
公开(公告)日：2011-02-17
申请号：US12912796
申请日：2010-10-27
申请人： Masaki Shiraishi , Noboru Akiyama , Tomoaki Uno , Nobuyoshi Matsuura
发明人： Masaki Shiraishi , Noboru Akiyama , Tomoaki Uno , Nobuyoshi Matsuura
IPC分类号： G05F3/24
CPC分类号： G05F3/08 , H01L23/3107 , H01L23/4824 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/16 , H01L29/1095 , H01L29/4175 , H01L29/41758 , H01L29/41766 , H01L29/4238 , H01L29/7811 , H01L29/7813 , H01L29/7835 , H01L2224/05554 , H01L2224/05644 , H01L2224/05647 , H01L2224/0603 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/48644 , H01L2224/48647 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/49431 , H01L2224/73221 , H01L2224/84801 , H01L2224/8485 , H01L2224/85375 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01059 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/014 , H01L2924/07802 , H01L2924/12032 , H01L2924/12036 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： In order to reduce parasitic inductance of a main circuit in a power supply circuit, a non-insulated DC-DC converter is provided including a circuit in which a power MOS•FET for a high-side switch and a power MOS•FET for a low-side switch are connected in series. In the non-insulated DC-DC converter, the power MOS•FET for the high-side switch is formed by a p-channel vertical MOS•FET, and the power MOS•FET for the low-side switch is formed by an n channel vertical MOS•FET. Thus, a semiconductor chip formed with the power MOSFET for the high-side switch and a semiconductor chip formed with the power MOS•FET for the low-side switch are mounted over the same die pad and electrically connected to each other through the die pad.
摘要翻译：为了减少电源电路中的主电路的寄生电感，提供了一种非绝缘DC-DC转换器，其包括其中用于高侧开关的功率MOS•FET和功率MOS•FET用于低侧开关串联连接。在非绝缘DC-DC转换器中，高侧开关的功率MOS•FET由p沟道垂直MOS•FET形成，而低边开关的功率MOS•FET由n形成通道垂直MOS•FET。因此，形成有用于高侧开关的功率MOSFET的半导体芯片和形成有用于低侧开关的功率MOS•FET的半导体芯片安装在相同的芯片焊盘上并通过芯片焊盘彼此电连接。

85. 发明授权

US07852651B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07852651B2
公开(公告)日：2010-12-14
申请号：US12430972
申请日：2009-04-28
申请人： Masaki Shiraishi , Noboru Akiyama , Tomoaki Uno , Nobuyoshi Matsuura
发明人： Masaki Shiraishi , Noboru Akiyama , Tomoaki Uno , Nobuyoshi Matsuura
IPC分类号： H02M1/00 , H01L23/48 , H05K7/02
CPC分类号： G05F3/08 , H01L23/3107 , H01L23/4824 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/16 , H01L29/1095 , H01L29/4175 , H01L29/41758 , H01L29/41766 , H01L29/4238 , H01L29/7811 , H01L29/7813 , H01L29/7835 , H01L2224/05554 , H01L2224/05644 , H01L2224/05647 , H01L2224/0603 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/48644 , H01L2224/48647 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/49431 , H01L2224/73221 , H01L2224/84801 , H01L2224/8485 , H01L2224/85375 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01059 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/014 , H01L2924/07802 , H01L2924/12032 , H01L2924/12036 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The object of the present invention is to reduce parasitic inductance of a main circuit in a power supply circuit. The present invention provides a non-insulated DC-DC converter having a circuit in which a power MOS•FET for a high-side switch and a power MOS•FET for a low-side switch are connected in series. In the non-insulated DC-DC converter, the power MOS•FET for the high-side switch is formed by a p channel vertical MOS•FET, and the power MOS•FET for the low-side switch is formed by an n channel vertical MOS•FET. Thus, a semiconductor chip formed with the power MOS•FET for the high-side switch and a semiconductor chip formed with the power MOS•FET for the low-side switch are mounted over the same die pad and electrically connected to each other through the die pad.
摘要翻译：本发明的目的是减少电源电路中的主电路的寄生电感。本发明提供了一种非绝缘DC-DC转换器，其具有用于高侧开关的功率MOS•FET和低侧开关的功率MOS•FET串联连接的电路。在非绝缘DC-DC转换器中，高侧开关的功率MOS•FET由ap沟道垂直MOS•FET形成，低边开关功率MOS•FET由n沟道垂直 MOS•FET。因此，形成有用于高侧开关的功率MOS·FET的半导体芯片和形成有用于低侧开关的功率MOS·FET的半导体芯片安装在相同的芯片焊盘上，并且通过芯片垫

86. 发明授权

US07514731B2 Switch elements and a DC/DC converter using the same 有权
标题翻译：开关元件和使用其的DC / DC转换器
公开(公告)号：US07514731B2
公开(公告)日：2009-04-07
申请号：US11175288
申请日：2005-07-07
申请人： Masaki Shiraishi , Takayuki Iwasaki , Nobuyoshi Matsuura
发明人： Masaki Shiraishi , Takayuki Iwasaki , Nobuyoshi Matsuura
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7813 , H01L21/823487 , H01L24/48 , H01L24/49 , H01L25/16 , H01L27/088 , H01L2224/05554 , H01L2224/0603 , H01L2224/4813 , H01L2224/48137 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/1306 , H01L2924/13091 , H01L2924/30107 , H02M3/1588 , Y02B70/1466 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A semiconductor device in which the self-turn-on phenomenon is prevented that can significantly improve power conversion efficiency. The semiconductor device is a system-in-package for power supply applications in which a high-side switch, a low-side switch, and two drivers are included in a single package. The device includes an auxiliary switch disposed between the gate and source of said low-side switch, and a low-side MOSFET 3 for the low-side switch and an auxiliary MOSFET 4 for the auxiliary switch are disposed on the same chip. In this way, the self-turn-on phenomenon can be prevented, allowing the mounting of a low-side MOSFET 3 with a low threshold voltage and thereby significantly improving power conversion efficiency. The gate of the auxiliary MOSFET 4 is driven by the driver for the high-side MOSFET 2, thereby eliminating the need for a new drive circuit and realizing the same pin configuration as existing products, which facilitates easy replacement.
摘要翻译：能够防止能够显着提高电力转换效率的自启动现象的半导体装置。半导体器件是用于电源应用的系统级封装，其中高侧开关，低侧开关和两个驱动器包括在单个封装中。该装置包括设置在所述低侧开关的栅极和源极之间的辅助开关，并且用于低侧开关的低侧MOSFET 3和用于辅助开关的辅助MOSFET 4设置在同一芯片上。以这种方式，可以防止自导通现象，允许安装具有低阈值电压的低端MOSFET 3，从而显着提高功率转换效率。辅助MOSFET 4的栅极由用于高侧MOSFET 2的驱动器驱动，从而不需要新的驱动电路并实现与现有产品相同的引脚配置，这便于更换。

87. 发明授权

US07434456B2 Method for pneumatic tire simulation 有权
标题翻译：充气轮胎模拟方法
公开(公告)号：US07434456B2
公开(公告)日：2008-10-14
申请号：US11635605
申请日：2006-12-08
申请人： Masaki Shiraishi
发明人： Masaki Shiraishi
IPC分类号： G01M17/02
CPC分类号： G06F17/5095 , B60C99/006 , G06F17/5018 , G06F2217/16
摘要： A method for pneumatic tire simulation comprises the steps of modeling a tire body having a cavity extending in a circumferential direction of the tire using finite elements to build a tire body model, modeling the cavity surrounded by the tire body using finite volumes to build a cavity model, setting a pneumatic tire model coupled the tire body model with the cavity model so that a relative distance between an outer surface of the cavity model and an inner surface of the tire body model does not change, modeling a road using finite elements to build a road model, and executing a numerical simulation in which the tire model is made to roll on the road model in a predetermined condition.
摘要翻译：一种用于充气轮胎模拟的方法包括以下步骤：使用有限元件对具有在轮胎的圆周方向上延伸的空腔的轮胎主体进行建模，以构建轮胎主体模型，使用有限体积来建模由轮胎主体围绕的空腔以构建空腔模型，设置将轮胎主体模型与腔模型耦合的充气轮胎模型，使得腔模型的外表面与轮胎主体模型的内表面之间的相对距离不变，使用有限元构建道路道路模型，并且执行轮胎模型在预定条件下在道路模型上滚动的数值模拟。

88. 发明授权

US07415398B2 Method of simulating viscoelastic material 有权
标题翻译：模拟粘弹材料的方法
公开(公告)号：US07415398B2
公开(公告)日：2008-08-19
申请号：US10896862
申请日：2004-07-23
申请人： Masato Naito , Masaki Shiraishi
发明人： Masato Naito , Masaki Shiraishi
IPC分类号： G06G7/48
CPC分类号： G06F17/5018 , G06F2217/16
摘要： The present invention relates to a method of simulating the deformation of a viscoelastic material in which filler is blended to a matrix made of rubber or resin, the method including the steps of dividing the viscoelastic material into a finite number of elements to form a viscoelastic material model, a step of performing deformation calculation of the viscoelastic material model based on a predetermined condition, and a step of acquiring a necessary physical amount from the deformation calculation, where the step of dividing the viscoelastic material into a finite number of elements includes a step of dividing at least one filler into a finite number of elements to form a filler model, and a step of dividing the matrix into a finite number of elements to form a matrix model.
摘要翻译：本发明涉及一种模拟粘合弹性材料变形的方法，其中将填料与由橡胶或树脂制成的基体共混，该方法包括以下步骤：将粘弹性材料分成有限数量的元素以形成粘弹性材料模型，基于预定条件进行粘弹性材料模型的变形计算的步骤，以及从变形计算获取必要物理量的步骤，其中将粘弹性材料划分为有限数量的元件的步骤包括步骤将至少一个填料分成有限数量的元素以形成填充模型，以及将矩阵划分为有限数量的元素以形成矩阵模型的步骤。

89. 发明申请

US20080154561A1 Method for modeling a tire model and simulation method 有权
标题翻译：轮胎模型建模方法和模拟方法
公开(公告)号：US20080154561A1
公开(公告)日：2008-06-26
申请号：US11979602
申请日：2007-11-06
申请人： Masaki Shiraishi
发明人： Masaki Shiraishi
IPC分类号： G06G7/70
CPC分类号： G06F17/5095 , B60C99/006 , G06F17/5018
摘要： A method for modeling a tire model used for a computer simulation of a pneumatic tire with a toroidal main body and a circumferentially extending tread pattern formed thereon, comprises a step for setting a three-dimensional main body model by dividing the main body by N (N is an integer not less than 2) equally in a circumferential direction of the tire using a finite number of elements a step for setting a three-dimensional pattern model by dividing the tread pattern by M (M is an integer greater than N) equally in the circumferential direction of the tire using a finite number of elements to make, a step for coupling the pattern model with the main body model while aligning each tire rotation axis to make a three-dimensional tire model, and a correcting step for moving nodal points existing on a radially outer surface of the pattern model such that a thickness of the pattern model measured from a radially outer surface of the main body model in a normal direction becomes constant.
摘要翻译：一种用于对具有环形主体和形成在其上的周向延伸的胎面花纹的充气轮胎的计算机模拟的轮胎模型进行建模的方法包括通过将主体分割为N（N）而设置三维主体模型的步骤 N是不小于2的整数）使用有限数量的元件在轮胎的圆周方向上平均地通过将胎面花纹除以M（M是大于N的整数）来设置三维花纹模型的步骤在使用有限数量的元件的轮胎的圆周方向上，在对准每个轮胎旋转轴线以制成三维轮胎模型的同时将图案模型与主体模型耦合的步骤，以及用于移动节点的校正步骤存在于图案模型的径向外表面上的点，使得从正常方向的主体模型的径向外表面测量的图案模型的厚度变得恒定。

90. 发明申请

US20070137290A1 Method for pneumatic tire simulation 有权
标题翻译：充气轮胎模拟方法
公开(公告)号：US20070137290A1
公开(公告)日：2007-06-21
申请号：US11635605
申请日：2006-12-08
申请人： Masaki Shiraishi
发明人： Masaki Shiraishi
IPC分类号： G01M17/02 , E01C23/00
CPC分类号： G06F17/5095 , B60C99/006 , G06F17/5018 , G06F2217/16
摘要： A method for pneumatic tire simulation comprises the steps of modeling a tire body having a cavity extending in a circumferential direction of the tire using finite elements to build a tire body model, modeling the cavity surrounded by the tire body using finite volumes to build a cavity model, setting a pneumatic tire model coupled the tire body model with the cavity model so that a relative distance between an outer surface of the cavity model and an inner surface of the tire body model does not change, modeling a road using finite elements to build a road model, and executing a numerical simulation in which the tire model is made to roll on the road model in a predetermined condition.
摘要翻译：一种用于充气轮胎模拟的方法包括以下步骤：使用有限元件对具有在轮胎的圆周方向上延伸的空腔的轮胎主体进行建模，以构建轮胎主体模型，使用有限体积来建模由轮胎主体围绕的空腔以构建空腔模型，设置将轮胎主体模型与腔模型耦合的充气轮胎模型，使得腔模型的外表面与轮胎主体模型的内表面之间的相对距离不变，使用有限元构建道路道路模型，并且执行轮胎模型在预定条件下在道路模型上滚动的数值模拟。

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