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81. 发明申请

US20090164531A1 REMOTE COPY SYSTEM, REMOTE ENVIRONMENT SETTING METHOD, AND DATA RESTORE METHOD 有权
标题翻译：远程复制系统，远程环境设置方法和数据恢复方法
公开(公告)号：US20090164531A1
公开(公告)日：2009-06-25
申请号：US12038403
申请日：2008-02-27
申请人： Koichi Tanaka , Koji Nagata , Kosuke Sakai
发明人： Koichi Tanaka , Koji Nagata , Kosuke Sakai
IPC分类号： G06F17/30 , G06F15/16
CPC分类号： G06F11/2094 , G06F11/1456 , G06F11/1464 , G06F11/1469 , G06F11/1662
摘要： The input of a prescribed type information element is received from an operator via an operator interface. A first storage system outputs a first type information element required to construct a remote copy environment. A second storage system inputs second setting information, which comprises first type information elements and prescribed type information elements, uses the second setting information to execute a second setting, and outputs the second type information element required to construct a remote copy environment. The first storage system inputs first setting information, which comprises the second type information element, and uses the first setting information to execute a first setting. Since the types of information elements required to construct a remote copy environment are exchanged between the storage systems, the number of types of information elements inputted by the operator are less than the number of types of information elements required to construct the remote copy environment.
摘要翻译：经由操作员界面从操作者接收规定类型的信息要素的输入。第一存储系统输出构建远程复制环境所需的第一类型信息元素。第二存储系统输入包括第一类型信息元素和规定类型信息元素的第二设置信息，使用第二设置信息来执行第二设置，并输出构成远程复制环境所需的第二类型信息元素。第一存储系统输入包括第二类型信息元素的第一设置信息，并且使用第一设置信息来执行第一设置。由于在存储系统之间交换构建远程复制环境所需的信息元素的类型，所以由操作者输入的信息元素的类型数量小于构建远程复制环境所需的信息元素的数量。

82. 发明申请

US20090061557A1 METHOD FOR MANUFACTURING SUBSTRATE FOR PHOTOELECTRIC CONVERSION ELEMENT 有权
标题翻译：光电转换元件制造基板的方法
公开(公告)号：US20090061557A1
公开(公告)日：2009-03-05
申请号：US12282176
申请日：2007-03-12
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L31/18
CPC分类号： H01L21/76254 , H01L31/0687 , H01L31/1804 , H01L31/1892 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： A silicon layer having a conductivity type opposite to that of a bulk is provided on the surface of a silicon substrate and hydrogen ions are implanted to a predetermined depth into the surface region of the silicon substrate through the silicon layer to form a hydrogen ion-implanted layer. Then, an n-type germanium-based crystal layer whose conductivity type is opposite to that of the silicon layer and a p-type germanium-based crystal layer whose conductivity type is opposite to that of the germanium-based crystal layer are successively vapor-phase grown to provide a germanium-based crystal. The surface of the germanium-based crystal layer and the surface of the supporting substrate are bonded together. In this state, impact is applied externally to separate a silicon crystal from the silicon substrate along the hydrogen ion-implanted layer, thereby transferring a laminated structure composed of the germanium-based crystal and the silicon crystal onto the supporting substrate.
摘要翻译：在硅衬底的表面上提供具有与体的导电类型相反的导电类型的硅层，并且通过硅层将氢离子注入到硅衬底的表面区域中以预定深度注入到氢离子注入层。然后，其导电类型与硅层的导电类型相反的n型锗基晶体层和导电类型与锗基晶体层的导电类型相反的p型锗基晶体层连续蒸发，相生长以提供锗基晶体。锗基晶体层的表面和支撑基板的表面接合在一起。在这种状态下，外部施加冲击以沿着氢离子注入层从硅衬底分离硅晶体，从而将由锗基晶体和硅晶体组成的叠层结构转移到支撑衬底上。

83. 发明申请

US20090047528A1 SURFACE TREATMENT METHOD OF ALUMINUM EXTRUDING DIE, AND ALUMINUM EXTRUDING DIE 审中-公开
标题翻译：铝挤压模具的表面处理方法和铝挤压模具
公开(公告)号：US20090047528A1
公开(公告)日：2009-02-19
申请号：US11997213
申请日：2006-07-28
申请人： Teruo Tachi , Koichi Tanaka
发明人： Teruo Tachi , Koichi Tanaka
IPC分类号： B32B15/04 , C23C16/22
CPC分类号： C23C8/02 , B21C25/025 , C23C8/26 , C23C8/34 , Y10T428/31678
摘要： A surface treatment method of an aluminum extruding die having wear resistance and separation resistance is provided. The surface treatment method of an aluminum extruding die includes a first nitriding treatment step for forming a diffusion hardened layer 6 containing carbon and nitrogen at a surface layer portion of a die main body 5 by heating and retaining the die main body 5 made of tool steel in a nitriding gas atmosphere containing carburizing gas, and a second nitriding treatment step for forming a compound layer 7 substantially not containing carbon on a surface of the diffusion hardened layer 6 by heating and retaining the die main body 5 to which the first nitriding treatment was executed in a nitriding gas atmosphere not containing carburizing gas.
摘要翻译：提供了具有耐磨性和耐分离性的铝挤压模具的表面处理方法。铝挤压模具的表面处理方法包括：第一氮化处理步骤，通过加热并保持由工具钢制成的模具主体5，在模具主体5的表层部分形成含有碳和氮的扩散硬化层6 在含有渗碳气体的氮化气体气氛中进行第二氮化处理工序，以及第二氮化处理工序，通过加热保持第一氮化处理为原样的模具主体5，在扩散硬化层6的表面上形成基本不含碳的化合物层7 在不含渗碳气体的氮化气体气氛中执行。

84. 发明申请

US20080299742A1 Method for manufacturing SOI wafer 有权
标题翻译：制造SOI晶圆的方法
公开(公告)号：US20080299742A1
公开(公告)日：2008-12-04
申请号：US12153519
申请日：2008-05-20
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/86
CPC分类号： H01L21/76254 , H01L21/3065 , H01L22/12 , H01L22/20 , H01L2924/014
摘要： There is disclosed a method for manufacturing an SOI wafer comprising: a step of implanting at least one of a hydrogen ion and a rare gas ion into a donor wafer to form an ion implanted layer; a step of bonding an ion implanted surface of the donor wafer to a handle wafer; a step of delaminating the donor wafer at the ion implanted layer to reduce a film thickness of the donor wafer, thereby providing an SOI layer; and a step of etching the SOI layer to reduce a thickness of the SOI layer, wherein the etching step includes: a stage of performing rough etching as wet etching; a stage of measuring a film thickness distribution of the SOI layer after the rough etching; and a stage of performing precise etching as dry etching based on the measured film thickness distribution of the SOI layer. There can be provided A method for manufacturing an SOI wafer having high film thickness uniformity of an SOI layer with excellent productivity.
摘要翻译：公开了一种用于制造SOI晶片的方法，包括：将氢离子和稀有气体离子中的至少一种注入施主晶片以形成离子注入层的步骤; 将施主晶片的离子注入表面接合到处理晶片的步骤; 在离子注入层分层施主晶片以降低施主晶片的膜厚，从而提供SOI层的步骤; 以及蚀刻所述SOI层以减小所述SOI层的厚度的步骤，其中所述蚀刻步骤包括：执行粗蚀刻的阶段，如湿蚀刻; 在粗蚀刻之后测量SOI层的膜厚分布的阶段; 以及基于所测量的SOI层的膜厚分布，进行干蚀刻的精确蚀刻的阶段。可以提供一种以优异的生产率制造具有SOI层的高膜厚均匀性的SOI晶片的方法。

85. 发明申请

US20080194078A1 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US20080194078A1
公开(公告)日：2008-08-14
申请号：US12010711
申请日：2008-01-29
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/20
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262
摘要： To obtain a semiconductor substrate having a high-quality Ge-based epitaxial film in a large area, a SiGe mixed crystal buffer layer and a Ge epitaxial film is grown on a main surface of a Si substrate 10. Although high-density defects are introduced in the Ge epitaxial film 11 from an interface between the Ge epitaxial film 11 and the Si substrate 10, the Ge epitaxial film is subjected to a heat treatment at a temperature of not less than 700° C. and not more than 900° C. to cause threading dislocations 12 to change into dislocation-loop defects 12′ near the interface between the Ge epitaxial film 11 and the Si substrate. A main surface of at least one of the Ge epitaxial film 11 with an ion implanted layer and a support substrate 20 is then subjected to a plasma treatment or ozone treatment for the purpose of surface cleaning, surface activation, and the like, after which the main surfaces of the Ge epitaxial film 11 and the support substrate 20 are appressed against and bonded to each other with their surfaces being determined as the joint surfaces. An external impact is then applied to the bonding interface, causing the Ge epitaxial film to be delaminated along a hydrogen ion implanted interface 13, thus obtaining a Ge thin film 14. A surface of the Ge thin film 14 is subsequently subjected to a final surface treatment (for example, CMP) to remove the damage caused by the hydrogen ion implantation, thus resulting in a GeOI substrate having the Ge thin film 14 on the surface thereof.
摘要翻译：为了获得大面积地具有高质量Ge基外延膜的半导体衬底，在Si衬底10的主表面上生长SiGe混晶缓冲层和Ge外延膜。虽然在Ge外延膜11和Si衬底10之间的界面上在Ge外延膜11中引入高密度缺陷，但Ge外延膜在不低于700℃的温度下进行热处理，不超过900℃导致穿透位错12变为位于Ge外延膜11和Si衬底之间的界面附近的位错环缺陷12'。为了表面清洁，表面活化等目的，对具有离子注入层的Ge外延膜11和支撑基板20中的至少一个的主表面进行等离子体处理或臭氧处理，之后， Ge外延膜11和支撑基板20的主表面以其表面被确定为接合表面而相互贴合并彼此结合。然后对接合界面施加外部冲击，使得Ge外延膜沿着氢离子注入界面13分层，从而获得Ge薄膜14。随后，对Ge薄膜14的表面进行最终表面处理（例如CMP），以消除由氢离子注入引起的损伤，从而得到其表面上具有Ge薄膜14的GeOI基板。

86. 发明授权

US07407722B2 Gas diffusing electrode body, method of manufacturing the same and electrochemical device 失效
标题翻译：气体扩散电极体及其制造方法及电化学装置
公开(公告)号：US07407722B2
公开(公告)日：2008-08-05
申请号：US10468313
申请日：2002-03-07
申请人： Koichi Tanaka , Kenji Katori , Minehisa Imazato , Kiyoshi Yamaura , Katsuya Shirai , Junji Kuyama
发明人： Koichi Tanaka , Kenji Katori , Minehisa Imazato , Kiyoshi Yamaura , Katsuya Shirai , Junji Kuyama
IPC分类号： H01M4/88 , H01M4/90 , H01M4/96
CPC分类号： H01M4/8882 , H01M4/8605 , H01M4/8657 , H01M4/8821 , H01M4/8825 , H01M4/9083 , H01M4/92 , H01M4/926 , H01M4/96
摘要： A gas diffusing electrode, an electrochemical device, such as fuel cell, employing same and methods of manufacturing same are provided. The gas diffusing electrode at least includes layers made of at least electro-conductive carbon powder or granule and sputtered platinum layers made of platinum laid alternately to form a multilayer structure. The electrochemical device can be down-sized while maintaining a relatively high power generating capacity.
摘要翻译：提供气体扩散电极，电化学装置，例如使用燃料电池的燃料电池及其制造方法。气体扩散电极至少包括由至少导电碳粉末或颗粒制成的层和由铂交替形成的溅射铂层，以形成多层结构。电化学装置可以在保持相对高的发电能力的同时进行小型化。

87. 发明申请

US20080119028A1 SOQ substrate and method of manufacturing SOQ substrate 有权
标题翻译： SOQ基板和制造SOQ基板的方法
公开(公告)号：US20080119028A1
公开(公告)日：2008-05-22
申请号：US11984184
申请日：2007-11-14
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/30
CPC分类号： H01L21/3247 , H01L21/76254 , H01L29/78603
摘要： To lower a process temperature for an SOQ substrate manufacturing process to reduce the degree of surface roughness of an SOQ film and provide a high-quality SOQ substrate.Hydrogen ions are implanted to a surface of a single crystal Si substrate 10 through an oxide film 11 to uniformly form an ion implanted layer 12 at a predetermined depth (average ion implantation depth L) from the surface of the single crystal Si substrate 10, and a bonding surface of the substrate undergoes a plasma treatment or an ozone treatment. An external shock is applied onto the single crystal Si substrate 10 and quartz substrate 20, which are bonded together, to mechanically delaminate a silicon film 13 from a single crystal silicon bulk 14. In this way, the SOQ film 13 is formed on the quartz substrate 20 through the oxide film 11. To further smooth the SOQ film surface, hydrogen heat treatment is performed at a temperature of 1000° C. or less below a quartz glass transition point. When measuring surface roughness of an SOQ film after performing hydrogen heat treatment on a sample having surface roughness of about 5 nm in terms of RMS average value immediately after delamination, a satisfactory measurement result of 0.3 nm or less in terms of RMS average value was obtained.
摘要翻译：为了降低SOQ基板制造工艺的工艺温度以降低SOQ膜的表面粗糙度并提供高质量的SOQ基板。通过氧化膜11将氢离子注入到单晶Si衬底10的表面，以从单晶硅衬底10的表面以预定深度（平均离子注入深度L）均匀地形成离子注入层12，以及基板的接合面进行等离子体处理或臭氧处理。对结合在一起的单晶Si衬底10和石英衬底20施加外部冲击，从而将硅膜13与单晶硅体14机械地分层。这样，SOQ膜13形成在石英基板20通过氧化膜11.为了进一步平滑SOQ膜表面，在石英玻璃化转变点以下1000℃以下的温度下进行氢热处理。在对分层后的RMS平均值的表面粗糙度约为5nm的样品进行氢热处理后，测定SOQ膜的表面粗糙度，得到满意的平均值为0.3nm以下的测定结果。

88. 发明申请

US20080099065A1 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US20080099065A1
公开(公告)日：2008-05-01
申请号：US11907902
申请日：2007-10-18
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/04 , B29C65/00
CPC分类号： H01L31/1804 , H01L31/1896 , Y02B10/10 , Y02E10/547 , Y02P70/521
摘要： There is disclosed a method for producing a single crystal silicon solar cell comprising the steps of: implanting hydrogen ions or rare gas ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate thereat to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer. There can be provided a single crystal silicon solar cell where a light conversion layer is provided as a thin-film for effective utilization of silicon as a starting material of the silicon solar cell, which single crystal silicon solar cell is excellent in conversion characteristics and is less in degradation due to light irradiation, and which single crystal silicon solar cell is provided as a see-through type solar cell that is usable as a natural lighting window material of a house or the like.
摘要翻译：公开了一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过其离子注入表面将氢离子或稀有气体离子注入到单晶硅衬底中，以在单晶硅衬底中形成离子注入层; 在透明绝缘体基板的表面上形成透明导电膜; 对透明绝缘体基板上的单晶硅衬底的离子注入表面和/或透明导电膜的表面进行表面激活处理; 将透明绝缘体基板上的单晶硅衬底的离子注入表面和透明导电膜的表面彼此接合; 对离子注入层施加冲击以在其上机械分层单晶硅衬底以留下单晶硅层; 并在单晶硅层中形成p-n结。可以提供一种单晶硅太阳能电池，其中提供光转换层作为有效利用硅作为硅太阳能电池的起始材料的薄膜，该单晶硅太阳能电池的转换特性优异，并且是由于光照射而导致的劣化较少，并且提供单晶硅太阳能电池作为可用作房屋等的自然采光窗材料的透明型太阳能电池。

89. 发明申请

US20080004540A1 NEBULIZER OPTIMAL FOR PATIENT AT HOME CARE 审中-公开
标题翻译： NEBULIZER最适合家庭护理患者
公开(公告)号：US20080004540A1
公开(公告)日：2008-01-03
申请号：US11853607
申请日：2007-09-11
申请人： Osamu Nakao , Koichi Tanaka , Tomoya Ishida , Koichi Takizawa
发明人： Osamu Nakao , Koichi Tanaka , Tomoya Ishida , Koichi Takizawa
IPC分类号： A61B5/08 , G06Q50/00
CPC分类号： A61M15/00 , A61M15/008 , A61M15/0081 , A61M16/161 , A61M2016/0027 , A61M2016/0042 , A61M2205/3368 , A61M2205/3382 , A61M2205/3386 , A61M2205/3553 , A61M2205/52 , A61M2205/6063 , A61M2205/6072 , G06Q50/22
摘要： A nebulizer includes a peak flow meter measuring the respiratory function of a patient and a nebulizer as an inhaler of a liquid medicine. The patient blows in the breath from a peak flow meter blow-in section of the nebulizer into the peak flow meter to measure the respiratory function. Further, the patient inhales the liquid medicine in a liquid medicine bottle inserted into a liquid medicine bottle insert opening from a nebulizer inhale opening. Simultaneously, outer air measurement is performed with a temperature sensor and a humidity sensor of the nebulizer. Such measurement data and inhale recording data are transmitted to a server from an external connection. Thus, a health site of the patient based on the data is opened on a network. The patient can obtain appropriate advice from a doctor, and a liquid medicine supply from a service provider at appropriate timing.
摘要翻译：雾化器包括测量患者的呼吸功能的峰值流量计和作为液体药物的吸入器的雾化器。患者将呼吸从喷雾器的峰值流量计吹入部分吹入峰值流量计以测量呼吸功能。此外，患者在从喷雾器吸入口插入液体药瓶插入口的液体药瓶中吸入液体药物。同时，使用雾化器的温度传感器和湿度传感器进行外部空气测量。这样的测量数据和吸入记录数据从外部连接传输到服务器。因此，基于数据的患者的健康位置在网络上被打开。患者可以在适当的时间从医生处获得适当的建议，并从服务提供者处获得液体药物。

90. 发明授权

US07232623B2 Fuel cell, power supply method using fuel cell, function card, fuel supply mechanism for fuel cell, and generator and production thereof 有权
标题翻译：燃料电池，使用燃料电池的供电方法，功能卡，燃料电池的燃料供给机构和发电机及其制造
公开(公告)号：US07232623B2
公开(公告)日：2007-06-19
申请号：US10187812
申请日：2002-07-02
申请人： Tetsuya Yoshioka , Yasuhiro Watanabe , Eigo Kubota , Koichi Tanaka
发明人： Tetsuya Yoshioka , Yasuhiro Watanabe , Eigo Kubota , Koichi Tanaka
IPC分类号： H01M2/00 , H01M2/02 , H01M2/10
CPC分类号： H01M8/04208 , G06F1/1635 , H01M8/0206 , H01M8/0247 , H01M8/0258 , H01M8/04104 , H01M8/04156 , H01M8/04179 , H01M8/2475 , H01M2250/30 , Y02B90/18 , Y02P70/56
摘要： A fuel cell having a structure capable of certainly supplying a gas by making effective use of a limited space while ensuring the portability of the fuel cell is provided. The fuel cell includes two generators, a fuel supply portion, and two planar current collectors. Each of the generators has a proton conductor film, and a planar hydrogen side electrode and a planar oxygen side electrode disposed with the proton conductor film held therebetween. The fuel supply portion is adapted to supply a fuel to the hydrogen side electrodes of the generators. The planar current collectors, which are disposed in close-contact with the oxygen side electrodes of the generators, have gas transmission portions such as opening portions allowing the oxygen side electrodes to be opened to atmosphere. Since the oxygen side electrodes are opened to atmosphere, oxygen can be supplied to the generators without lowering a partial pressure of oxygen in air.
摘要翻译：提供一种能够确保燃料电池的便携性的同时有效利用有限空间的结构能够确保供给气体的燃料电池。燃料电池包括两个发电机，燃料供应部分和两个平面集电器。每个发生器具有质子导体膜，平坦的氢侧电极和平坦的氧气侧电极，其中质子传导膜保持在它们之间。燃料供给部适于向发生器的氢侧电极供给燃料。与发生器的氧侧电极紧密配置的平面集电体具有允许氧侧电极向大气开放的气体透过部分，例如开口部分。由于氧侧电极向大气开放，所以可以在不降低空气中的氧分压的情况下向发电机供给氧。

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