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81. 发明申请

US20060102897A1 Organic thin film transistor and flat panel display including the same 有权
标题翻译：有机薄膜晶体管和平板显示器包括它们
公开(公告)号：US20060102897A1
公开(公告)日：2006-05-18
申请号：US11281951
申请日：2005-11-16
申请人： Min-Chul Suh , Jae-Bon Koo
发明人： Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L29/08
CPC分类号： H01L51/0545 , H01L51/0005 , H01L51/0021
摘要： An organic thin film transistor comprising an organic semiconductor layer that does not cause a coffee stain effect and can prevent an imperfect contact with source and drain electrodes, and a flat panel display apparatus comprising the organic thin film transistor are provided. The organic thin film transistor comprises a gate electrode; source and drain electrodes insulated from the gate electrode; and an organic semiconductor layer insulated from the gate electrode and contacts the source and drain electrodes, wherein the organic semiconductor layer has a circular shape when viewed through a substrate on which the organic thin film transistor is formed, and an edge portion of at least one of the source and drain electrodes contacting the organic semiconductor layer having a curved shape that is concave toward the organic semiconductor layer.
摘要翻译：提供了一种有机薄膜晶体管，其包括不引起咖啡污染效应的有机半导体层，并且可以防止与源极和漏极的不完全接触，以及包括有机薄膜晶体管的平板显示装置。有机薄膜晶体管包括栅电极; 源极和漏极与栅电极绝缘; 以及与栅电极绝缘并与源电极和漏电极接触的有机半导体层，其中当通过其上形成有机薄膜晶体管的衬底观察时，有机半导体层具有圆形形状，并且至少一个与具有向有机半导体层凹入的弯曲形状的有机半导体层接触的源电极和漏电极。

82. 发明申请

US20060028130A1 Organic thin film transistor and flat panel display device including the same 有权
公开(公告)号：US20060028130A1
公开(公告)日：2006-02-09
申请号：US11196241
申请日：2005-08-04
申请人： Jae-Bon Koo , Min-Chul Suh , Kyong-Do Kim , Yeon-Gon Mo
发明人： Jae-Bon Koo , Min-Chul Suh , Kyong-Do Kim , Yeon-Gon Mo
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L51/0516
摘要： Provided are an organic thin film transistor (TFT), which can prevent deformation or separation due to mechanical stress, and a flat panel display device including the organic TFT. The organic TFT includes a gate electrode; a source electrode and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode, and contacting the source electrode and the drain electrodes; and a gate insulating layer insulating the gate electrode from the source electrode, the drain electrode, and the organic semiconductor layer. The gate insulating layer may be patterned in an island shape to permit adjacent portions of the substrate to flex freely, thereby reducing stress and deformation of the organic TFT and its component layers.

83. 发明申请

US20060027838A1 Semiconductor device and flat panel display device having the same 有权
标题翻译：半导体装置及具有该半导体装置的平板显示装置
公开(公告)号：US20060027838A1
公开(公告)日：2006-02-09
申请号：US11186750
申请日：2005-07-22
申请人： Jae-Bon Koo , Min-Chul Suh
发明人： Jae-Bon Koo , Min-Chul Suh
IPC分类号： H01L31/112
CPC分类号： H01L27/3262 , H01L27/124 , H01L27/283 , H01L51/56 , H01L2227/323
摘要： A semiconductor device having two thin film transistors where cross-talk is minimized and a flat panel display device having the same. The semiconductor device includes a first electrode, a second electrode surrounding the first electrode in the same plane, a third electrode surrounding the second electrode in the same plane, a fourth electrode surrounding the third electrode in the same plane, a first gate electrode insulated from the first through fourth electrodes and arranged on another plane separate from the first through fourth electrodes to correspond to a space between the first electrode and the second electrode, a second gate electrode insulated from the first through fourth electrodes and arranged on yet another plane separate from the plane of the first through fourth electrodes to correspond to a space between the third electrode and the fourth electrode, and a semiconductor layer insulated from the first gate electrode and the second gate electrode and contacting the first through fourth electrodes.
摘要翻译：具有两个薄膜晶体管的半导体器件，其中串扰最小化，以及具有该薄膜晶体管的平板显示器件。半导体器件包括第一电极，围绕同一平面中的第一电极的第二电极，围绕同一平面中的第二电极的第三电极，围绕同一平面中的第三电极的第四电极，与第一电极绝缘的第一电极所述第一至第四电极布置在与所述第一至第四电极分离的另一平面上，以对应于所述第一电极和所述第二电极之间的空间;第二栅电极，与所述第一至第四电极绝缘并且布置在与所述第一至第四电极的平面对应于所述第三电极和所述第四电极之间的空间，以及与所述第一栅电极和所述第二栅电极绝缘并与所述第一至第四电极接触的半导体层。

84. 发明申请

US20060027805A1 Thin film transistor and method of fabricating the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20060027805A1
公开(公告)日：2006-02-09
申请号：US11193474
申请日：2005-08-01
申请人： Jae-Bon Koo , Min-Chul Suh
发明人： Jae-Bon Koo , Min-Chul Suh
IPC分类号： H01L29/10 , H01L21/84
CPC分类号： H01L21/02118 , H01L21/31691 , H01L51/0021 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0052 , H01L51/0053 , H01L51/0097 , H01L51/0516 , H01L51/0545
摘要： An organic thin film transistor (OTFT) having an adhesive layer and a method of fabricating the same. The OTFT includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode and on remaining exposed portions of the substrate, an adhesive layer formed on the gate insulating layer, source/drain electrodes formed on the adhesive layer, and a semiconductor layer formed on the source/drain electrodes and on the adhesive layer. The gate insulating layer and the semiconductor layer are organic, the adhesive layer providing adhesion between the source/drain electrodes and the gate insulating film while preventing gate leakage current while also improving contact resistance.
摘要翻译：一种具有粘合剂层的有机薄膜晶体管（OTFT）及其制造方法。 OTFT包括形成在基板上的栅极电极，形成在栅电极上的栅极绝缘层和基板的剩余的暴露部分，形成在栅极绝缘层上的粘合层，形成在粘合剂层上的源极/漏极，以及在源/漏电极和粘合剂层上形成的半导体层。栅极绝缘层和半导体层是有机的，粘合剂层在防止栅极漏电流同时也提高接触电阻的同时提供源/漏电极和栅极绝缘膜之间的粘附。

85. 发明申请

US20060017106A1 TFT, electronic device having the TFT, and flat display device having the TFT 有权
公开(公告)号：US20060017106A1
公开(公告)日：2006-01-26
申请号：US11184829
申请日：2005-07-20
申请人： Min-Chul Suh , Jae-Bon Koo , Hye-Dong Kim
发明人： Min-Chul Suh , Jae-Bon Koo , Hye-Dong Kim
IPC分类号： H01L27/12
CPC分类号： H01L27/1222 , B82Y10/00 , H01L27/1214 , H01L29/0665 , H01L29/0673 , H01L29/78681 , H01L29/78696
摘要： The invention provides an improved thin film transistor (TFT) that can be formed at room temperature and has an improved contact resistance between an active layer and source and drain electrodes, and further provides a flat display device using such a TFT. The TFT includes an active layer including at least two nano particle layers which include at least one nano particle type, an insulating layer interposed between the nano particle layers, a gate electrode insulated from the active layer, and source and drain electrodes formed in respective channels, the source and drain electrodes contact one of the nano particle layers of the active layer. The structure of the TFT facilitates the simultaneous manufacturing of a plurality of different types of TFTs.

86. 发明申请

US20050258422A1 Thin film transistor and flat panel display using the same 有权
标题翻译：薄膜晶体管和平板显示器使用相同
公开(公告)号：US20050258422A1
公开(公告)日：2005-11-24
申请号：US11134294
申请日：2005-05-23
申请人： Jae-Bon Koo , Min-Chul Suh , Yeon-Gon Mo
发明人： Jae-Bon Koo , Min-Chul Suh , Yeon-Gon Mo
IPC分类号： G02F1/1362 , G02F1/1368 , H01L21/336 , H01L29/76 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40 , H01L51/50 , H05B33/14
CPC分类号： H01L51/0545 , G02F1/136227 , G02F1/1368 , H01L51/0004 , H01L51/0037 , H01L51/0038 , H01L51/0039 , H01L51/0062 , H01L51/0078 , H01L51/0081
摘要： A thin film transistor, and a flat panel display with the same, including a gate electrode, source and drain electrodes, an organic semiconductor layer, and a gate insulating layer. A first capacitance is a capacitance at a first point where the organic semiconductor layer, an electrode, and the gate insulating layer contact one another, a second capacitance is a capacitance at a second point where the organic semiconductor layer contacts the gate insulating layer, a third capacitance is a capacitance at a third point where the electrode contacts the gate insulating layer, and a fourth capacitance is a capacitance at a fourth point where the organic semiconductor layer contacts the electrode. The first capacitance is greater than one of the second capacitance, the third capacitance, and the fourth capacitance.
摘要翻译：薄膜晶体管及其平板显示器，包括栅极，源极和漏极，有机半导体层和栅极绝缘层。第一电容是在有机半导体层，电极和栅极绝缘层彼此接触的第一点处的电容，第二电容是有机半导体层接触栅绝缘层的第二点处的电容，第三电容是电极接触栅极绝缘层的第三点处的电容，第四电容是有机半导体层接触电极的第四点处的电容。第一电容大于第二电容，第三电容和第四电容中的一个。

87. 发明授权

US08711074B2 Flat panel display 有权
标题翻译：平板显示器
公开(公告)号：US08711074B2
公开(公告)日：2014-04-29
申请号：US12243945
申请日：2008-10-01
申请人： Jae-Bon Koo , Byoung-Deog Choi
发明人： Jae-Bon Koo , Byoung-Deog Choi
IPC分类号： G09G3/36
CPC分类号： H01L29/78615 , H01L27/12 , H01L27/3262 , H01L29/783 , H01L29/78639
摘要： A high-speed flat panel display having a long lifetime. Thin film transistors in a pixel portion having a plurality of pixels are contacted differently from thin film transistors in driving circuit portions for driving the pixels, thereby enhancing luminance uniformity and reducing power consumption. The thin film transistors each have a channel region and a body contact region for applying a predetermined voltage to the channel region. At least one thin film transistor in the pixel portion is a source-body contact thin film transistor having the body contact region connected to one of source and drain electrodes so that the predetermined voltage can be provided to the channel region. Each thin film transistor in the driving circuit portion is a gate-body contact thin film transistor having the body contact region connected to the gate electrode so that a predetermined voltage can be provided to the channel region.
摘要翻译：一种寿命长的高速平板显示器。具有多个像素的像素部分中的薄膜晶体管与用于驱动像素的驱动电路部分中的薄膜晶体管不同地接触，从而增强亮度均匀性并降低功耗。薄膜晶体管各自具有用于向沟道区施加预定电压的沟道区和体接触区。像素部分中的至少一个薄膜晶体管是源体接触薄膜晶体管，其具有连接到源极和漏极之一的主体接触区域，从而可以将预定电压提供给沟道区域。驱动电路部分中的每个薄膜晶体管是具有连接到栅电极的体接触区域的门体接触薄膜晶体管，从而可以向沟道区域提供预定电压。

88. 发明授权

US08648364B2 Flat panel display including an opaque film to block an eternal light reflected from a thin film transistor (TFT) and a capacitor 有权
标题翻译：平板显示器包括用于阻挡从薄膜晶体管（TFT）和电容器反射的外部光的不透明膜
公开(公告)号：US08648364B2
公开(公告)日：2014-02-11
申请号：US11773789
申请日：2007-07-05
申请人： Jae-Bon Koo , Dong-Chan Shin
发明人： Jae-Bon Koo , Dong-Chan Shin
IPC分类号： H01L29/205 , H01L33/00
CPC分类号： H01L27/3276 , H01L27/3265 , H01L51/5284 , H01L2251/5346
摘要： A flat panel display with a black matrix and a fabrication method of the same. The flat panel display has an insulating substrate at the upper part of which a pixel electrode is equipped; an opaque conductive film formed on the front surface of the insulating substrate except at the pixel electrode; an insulating film equipped with a contact hole exposing a portion of the opaque conductive film; and a thin film transistor equipped with a gate electrode, and conductive patterns for source/drain electrodes connected to the opaque conductive film through the contact hole.
摘要翻译：具有黑矩阵的平板显示器及其制造方法。平板显示器在其上部配备有像素电极的绝缘基板; 在除了像素电极之外的绝缘基板的前表面上形成的不透明导电膜; 绝缘膜，配备有暴露一部分不透明导电膜的接触孔; 以及配备有栅电极的薄膜晶体管，以及通过接触孔与不透明导电膜连接的源极/漏极的导电图案。

89. 发明授权

US08350267B2 Flat panel display 有权
标题翻译：平板显示器
公开(公告)号：US08350267B2
公开(公告)日：2013-01-08
申请号：US12104749
申请日：2008-04-17
申请人： Jae-Bon Koo , Ji-Yong Park , Sang-Il Park , Ki-Yong Lee , Ul-Ho Lee
发明人： Jae-Bon Koo , Ji-Yong Park , Sang-Il Park , Ki-Yong Lee , Ul-Ho Lee
IPC分类号： H01L27/14
CPC分类号： G09G3/3275 , H01L27/1214 , H01L29/78621 , H01L29/78624 , H01L29/78645 , H01L29/78672 , H01L29/78696
摘要： A high-speed flat panel display has thin film transistors in a pixel array portion in which a plurality of pixels are arranged and a driving circuit portion for driving the pixels of the pixel array portion, which have different resistance values than each other or have different geometric structures than each other. The flat panel display comprises a pixel array portion where a plurality of pixels are arranged, and a driving circuit portion for driving the pixels of the pixel array portion. The thin film transistors in the pixel array portion and the driving circuit portion have different resistance values in their gate regions or drain regions than each other, or have different geometric structures than each other. One thin film transistor has a zigzag shape in its gate region or drain region or has an offset region.
摘要翻译：高速平板显示器在其中排列有多个像素的像素阵列部分中具有薄膜晶体管，以及用于驱动像素阵列部分的像素的驱动电路部分，其具有彼此不同的电阻值或具有不同的像素阵列部分几何结构比彼此。平板显示器包括其中布置有多个像素的像素阵列部分和用于驱动像素阵列部分的像素的驱动电路部分。像素阵列部分和驱动电路部分中的薄膜晶体管在其栅极区域或漏极区域中具有彼此不同的电阻值，或者具有彼此不同的几何结构。一个薄膜晶体管在其栅极区域或漏极区域中具有锯齿形状或具有偏移区域。

90. 发明授权

US08273638B2 Thin film transistor using a metal induced crystallization process and method for fabricating the same and active matrix flat panel display using the thin film transistor 有权
标题翻译：使用金属诱导结晶工艺的薄膜晶体管及其制造方法以及使用该薄膜晶体管的有源矩阵平板显示器
公开(公告)号：US08273638B2
公开(公告)日：2012-09-25
申请号：US11968365
申请日：2008-01-02
申请人： Jae-Bon Koo , Sang-Gul Lee
发明人： Jae-Bon Koo , Sang-Gul Lee
IPC分类号： C30B1/08 , C09K19/00
CPC分类号： H01L27/12 , H01L21/02422 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L29/78603
摘要： Provided is a thin film transistor that may be manufactured using Metal Induced Crystallization (MIC) and method for fabricating the same. Also provided is an active matrix flat panel display using the thin film transistor, which may be created by forming a crystallization inducing metal layer below a buffer layer and diffusing the crystallization inducing metal layer. The thin film transistor may include a crystallization inducing metal layer formed on an insulating substrate, a buffer layer formed on the crystallization inducing metal layer, and an active layer formed on the buffer layer and including source/drain regions, and including polycrystalline silicon crystallized by the MIC process.
摘要翻译：提供了可以使用金属诱导结晶（MIC）制造的薄膜晶体管及其制造方法。还提供了使用薄膜晶体管的有源矩阵平板显示器，其可以通过在缓冲层下方形成结晶诱导金属层并扩散结晶诱导金属层来产生。薄膜晶体管可以包括形成在绝缘基板上的结晶诱导金属层，形成在结晶诱导金属层上的缓冲层，以及形成在缓冲层上并包括源极/漏极区域的有源层，并且包括由 MIC过程。

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