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81. 发明授权

US08917260B2 Optical touch panels and methods of driving the same 有权
标题翻译：光触摸面板及其驱动方法
公开(公告)号：US08917260B2
公开(公告)日：2014-12-23
申请号：US12805722
申请日：2010-08-17
申请人： Sun-il Kim , Chang-jung Kim , Sang-hun Jeon , I-hun Song , Jae-chul Park
发明人： Sun-il Kim , Chang-jung Kim , Sang-hun Jeon , I-hun Song , Jae-chul Park
IPC分类号： G06F3/042 , G06F3/041 , G06F3/038
CPC分类号： G06F3/0412 , G06F3/0386
摘要： An optical touch panel may include a plurality of light-sensing areas. The plurality of light-sensing areas may be integrally formed with pixels in a display panel or may be formed on the display panel, in order to sense incident light from outside the optical touch panel. A method of driving an optical touch panel may include sensing a change in an output from a plurality of light-sensing areas between two time points and determining that there is an optical input when the change in the output is greater than or equal to a first reference value that is defined in advance. The light-sensing areas may be integrally formed with pixels in a display panel or formed on a surface of the display panel, for sensing incident light from outside the optical touch panel.
摘要翻译：光学触摸面板可以包括多个感光区域。多个感光区域可以与显示面板中的像素一体地形成，或者可以形成在显示面板上，以便感测来自光学触摸面板外部的入射光。驱动光学触摸面板的方法可以包括：在两个时间点之间感测来自多个光感测区域的输出的变化，并且当输出的变化大于或等于第一时间点时，确定存在光学输入提前定义的参考值。光感测区域可以与显示面板中的像素一体地形成或形成在显示面板的表面上，用于感测来自光学触摸面板外部的入射光。

82. 发明授权

US08890138B2 Optical touch panel and method of fabricating the same 有权
标题翻译：光触摸面板及其制造方法
公开(公告)号：US08890138B2
公开(公告)日：2014-11-18
申请号：US12929301
申请日：2011-01-13
申请人： Jae-chul Park , I-hun Song , Chang-jung Kim
发明人： Jae-chul Park , I-hun Song , Chang-jung Kim
IPC分类号： H01L31/0248 , H01L27/12 , G06F3/041 , G02F1/1333 , G06F3/042 , G02F1/1368
CPC分类号： G02F1/13338 , G02F1/1368 , G06F3/0412 , G06F3/042 , H01L27/1225
摘要： An optical touch panel may be used remotely to control a large-sized display device. According to a method of fabricating the optical touch panel, an optical sensor transistor for sensing light and a switch transistor for drawing data can be formed together on the same substrate by using a relatively simple process. The optical touch panel may include an optical sensor transistor and a switch transistor. The optical sensor transistor may be configured to sense light and the switch transistor may be configured to draw data from the optical sensor transistor. The optical sensor transistor may include a light sensitive oxide semiconductor material as a channel layer. The switch transistor may include a non-light sensitive oxide semiconductor material as a channel layer.
摘要翻译：可以远程地使用光学触摸面板来控制大型显示装置。根据制造光学触摸面板的方法，可以通过使用相对简单的工艺在相同的基板上一起形成用于感测光的光学传感器晶体管和用于绘制数据的开关晶体管。光学触摸面板可以包括光学传感器晶体管和开关晶体管。光学传感器晶体管可以被配置为感测光，并且开关晶体管可以被配置为从光学传感器晶体管绘制数据。光传感器晶体管可以包括作为沟道层的光敏氧化物半导体材料。开关晶体管可以包括作为沟道层的非光敏氧化物半导体材料。

83. 发明授权

US08842095B2 Light sensing circuit, and remote optical touch panel and image acquisition apparatus including the light sensing circuit 有权
公开(公告)号：US08842095B2
公开(公告)日：2014-09-23
申请号：US12926922
申请日：2010-12-17
申请人： Sung-ho Park , I-hun Song , Chang-jung Kim , Sang-hun Jeon , Seung-eon Ahn
发明人： Sung-ho Park , I-hun Song , Chang-jung Kim , Sang-hun Jeon , Seung-eon Ahn
IPC分类号： G06F19/00 , G06F3/0354 , G06F3/041 , G01J1/44 , G06F3/038 , H01L31/113 , H01L27/12 , H01L27/146
摘要： Example embodiments are directed to light sensing circuits having a relatively simpler structure by using light-sensitive oxide semiconductor transistors as light sensing devices, and remote optical touch panels and image acquisition apparatuses, each including the light sensing circuits. The light sensing circuit includes a light-sensitive oxide semiconductor transistor in each pixel, wherein the light-sensitive oxide semiconductor transistor is configured as a light sensing device, and a driving circuit that outputs data. The light sensing circuit may have a relatively simple circuit structure including a plurality of transistors in one pixel. As a result, the structure and operation of the light sensing circuit may be simplified.

84. 发明申请

US20110168993A1 Transistors and methods of manufacturing the same 有权
标题翻译：晶体管及其制造方法
公开(公告)号：US20110168993A1
公开(公告)日：2011-07-14
申请号：US12801500
申请日：2010-06-11
申请人： Sang-hun Jeon , I-hun Song , Chang-jung Kim , Sung-ho Park
发明人： Sang-hun Jeon , I-hun Song , Chang-jung Kim , Sung-ho Park
IPC分类号： H01L29/22 , H01L21/336 , H01L29/20
CPC分类号： H01L29/7869
摘要： Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions.
摘要翻译：晶体管及其制造方法。晶体管可以是具有自对准顶栅极结构的氧化物薄膜晶体管（TFT）。晶体管可以包括从栅电极的两侧延伸的沟道区和栅电极之间的栅极绝缘层。栅绝缘层可以覆盖源区和漏区的至少一部分。

85. 发明授权

US07719871B2 Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the same 有权
标题翻译：逻辑器件和半导体器件的操作和制造方法包括互补的非易失性存储器件和用于其的读取电路
公开(公告)号：US07719871B2
公开(公告)日：2010-05-18
申请号：US12025372
申请日：2008-02-04
申请人： Yoon-dong Park , Jo-won Lee , Chung-woo Kim , Eun-hong Lee , Sun-ae Seo , Woo-joo Kim , Hee-soon Chae , Soo-doo Chae , I-hun Song
发明人： Yoon-dong Park , Jo-won Lee , Chung-woo Kim , Eun-hong Lee , Sun-ae Seo , Woo-joo Kim , Hee-soon Chae , Soo-doo Chae , I-hun Song
IPC分类号： G11C5/06
CPC分类号： G11C11/5621 , H01L27/0688 , H01L27/11521 , H01L27/11551
摘要： Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.
摘要翻译：提供了一种互补的非易失性存储器件，其操作和制造方法，逻辑器件和具有该非易失性存储器件的半导体器件及其读取电路。互补非易失性存储器件包括顺序堆叠并具有互补关系的第一非易失性存储器和第二非易失性存储器。第一和第二非易失性存储器被布置成使得其上表面相邻。

86. 发明申请

US20090206978A1 Electrical fuse device including a fuse link 审中-公开
标题翻译：电熔丝装置包括熔断体
公开(公告)号：US20090206978A1
公开(公告)日：2009-08-20
申请号：US12379347
申请日：2009-02-19
申请人： Soo-Jung Hwang , Deok-kee Kim , Jung-hun Sung , I-hun Song , Hyuk-soon Choi
发明人： Soo-Jung Hwang , Deok-kee Kim , Jung-hun Sung , I-hun Song , Hyuk-soon Choi
IPC分类号： H01H85/10
CPC分类号： G11C17/16 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： Example embodiments relate to an electrical device, for example, to an electrical fuse device that includes a fuse link for linking a cathode and anode. An electrical device may include a cathode, an anode, and a fuse link. The fuse link may link the cathode and the anode. The fuse link may include a multi-metal layer structure. The fuse link may include a first metal layer including a first resistance, and a second metal layer stacked on the first metal layer and including a second resistance. The first resistance may be different from the second resistance. The fuse link may include a weak point as a region at which electrical blowing is performed easier than other regions of the fuse link.
摘要翻译：示例性实施例涉及电气设备，例如电气熔断器件，其包括用于连接阴极和阳极的熔断体。电气设备可以包括阴极，阳极和熔断体。熔丝链可以连接阴极和阳极。熔丝链可以包括多金属层结构。熔丝连接件可以包括第一金属层和第二金属层，第一金属层包括第一电阻，第二金属层堆叠在第一金属层上并包括第二电阻。第一阻力可能与第二阻力不同。熔断体可以包括作为进行电吹送的区域的弱点比熔丝链的其它区域更容易。

87. 发明申请

US20080212376A1 METHODS OF OPERATING AND MANUFACTURING LOGIC DEVICE AND SEMICONDUCTOR DEVICE INCLUDING COMPLEMENTARY NONVOLATILE MEMORY DEVICE, AND READING CIRCUIT FOR THE SAME 有权
标题翻译：操作和制造逻辑器件和包括补充非易失性存储器件的半导体器件的方法及其读取电路
公开(公告)号：US20080212376A1
公开(公告)日：2008-09-04
申请号：US12025372
申请日：2008-02-04
申请人： Yoon-dong Park , Jo-won Lee , Chung-woo Kim , Eun-hong Lee , Sun-ae Seo , Woo-joo Kim , Hee-soon Chae , Soo-doo Chae , I-hun Song
发明人： Yoon-dong Park , Jo-won Lee , Chung-woo Kim , Eun-hong Lee , Sun-ae Seo , Woo-joo Kim , Hee-soon Chae , Soo-doo Chae , I-hun Song
IPC分类号： G11C16/06 , H01L21/336 , G11C7/00
CPC分类号： G11C11/5621 , H01L27/0688 , H01L27/11521 , H01L27/11551
摘要： Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.
摘要翻译：提供了一种互补的非易失性存储器件，其操作和制造方法，逻辑器件和具有该非易失性存储器件的半导体器件及其读取电路。互补非易失性存储器件包括顺序堆叠并具有互补关系的第一非易失性存储器和第二非易失性存储器。第一和第二非易失性存储器被布置成使得其上表面相邻。

88. 发明申请

US20060208294A1 Method of manufacturing magnetic random access memory including middle oxide layer 失效
标题翻译：包括中间氧化物层的磁性随机存取存储器的制造方法
公开(公告)号：US20060208294A1
公开(公告)日：2006-09-21
申请号：US11438211
申请日：2006-05-23
申请人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
发明人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
IPC分类号： H01L31/062
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F41/307 , H01L27/228
摘要： In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.
摘要翻译：在单元中具有晶体管和磁隧道结（MTJ）层的磁性随机存取存储器（MRAM）中，MTJ层包括下磁层，防氧化层，隧道氧化物层和上磁层，顺序堆叠。隧道氧化物层可以使用原子层沉积（ALD）方法形成。至少防氧化层可以使用除ALD法以外的方法形成。

89. 发明授权

US06884731B2 Method for forming magnetic tunneling junction layer for magnetic random access memory 有权
标题翻译：磁性随机存取存储器磁隧道结层形成方法
公开(公告)号：US06884731B2
公开(公告)日：2005-04-26
申请号：US10765279
申请日：2004-01-28
申请人： Soon-won Hwang , I-hun Song , Tae-wan Kim
发明人： Soon-won Hwang , I-hun Song , Tae-wan Kim
IPC分类号： H01L21/3065 , G11C11/14 , G11C11/15 , G11C11/16 , H01L21/302 , H01L21/336 , H01L21/461 , H01L21/70 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/12
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16 , H01L43/12
摘要： A method of forming a magnetic tunneling junction (MTJ) layer for an MRAM includes sequentially forming a lower material layer, an insulation layer, and an upper material layer on a substrate, forming a mask pattern on a predetermined region of the upper material layer, sequentially removing the upper material layer, the insulation layer, and the lower material layer from around the mask pattern using plasma generated from an etching gas, wherein the etching gas is a mixture of a main gas and an additive gas having a predetermined mixture ratio and including no chlorine (Cl2) gas, and removing the mask pattern. Accordingly, an MTJ layer formed by the method may incur no thermal damage due to high temperature etching, no material deposits due to by-products of etching, and no step difference or corrosion due to chlorine gas, and may have an excellent profile.
摘要翻译：形成用于MRAM的磁隧道结（MTJ）层的方法包括：在衬底上依次形成下层材料层，绝缘层和上层材料层，在上层材料层的预定区域上形成掩模图案，使用从蚀刻气体产生的等离子体从掩模图案周围顺序地去除上部材料层，绝缘层和下部材料层，其中，蚀刻气体是主要气体和具有预定混合比的添加剂气体的混合物，包括没有氯（Cl 2/2））气体，并且去除掩模图案。因此，通过该方法形成的MTJ层可能不会由于高温蚀刻而导致热损伤，由于蚀刻的副产物而没有材料沉积，并且没有由于氯气导致的阶梯差或腐蚀，并且可能具有优异的外形。

90. 发明授权

US06781871B2 Magnetic random access memory and method of operating the same 有权
标题翻译：磁性随机存取存储器及其操作方法
公开(公告)号：US06781871B2
公开(公告)日：2004-08-24
申请号：US10316844
申请日：2002-12-12
申请人： Wan-jun Park , Tae-wan Kim , I-hun Song , Sang-jin Park , Richard J. Gambino
发明人： Wan-jun Park , Tae-wan Kim , I-hun Song , Sang-jin Park , Richard J. Gambino
IPC分类号： G11C1100
CPC分类号： G11C19/0808 , G11C11/15 , G11C11/16
摘要： A magnetic random access memory using magnetic domain drag and giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) and a method of operating the same, wherein the magnetic random access memory includes a data storage unit including a fixed layer, a non-magnetic layer, and a free layer having two ends; a data input means electrically connected to both ends of the free layer, for applying current to the free layer to input data into the data storage unit; and a data output means electrically connected to the free layer and the fixed layer to output data stored in the data storage unit. Accordingly, a magnetic random access memory according to the present invention has superior performance than one using a switching field to record data.
摘要翻译：一种使用磁畴阻力和巨磁阻（GMR）或隧道磁阻（TMR）的磁性随机存取存储器及其操作方法，其中磁性随机存取存储器包括数据存储单元，其包括固定层，非磁性层和具有两端的自由层; 电连接到自由层的两端的数据输入装置，用于向自由层施加电流以将数据输入数据存储单元; 以及电连接到所述自由层和所述固定层的数据输出装置，以输出存储在所述数据存储单元中的数据。因此，根据本发明的磁性随机存取存储器具有比使用切换字段来记录数据的磁性随机存取存储器更好的性能。

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