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81. 发明申请

US20060199305A1 METHOD FOR FABRICATING ULTRA-HIGH TENSILE-STRESSED FILM AND STRAINED-SILICON TRANSISTORS THEREOF 有权
标题翻译：制造超高压应力薄膜及其应变硅晶体管的方法
公开(公告)号：US20060199305A1
公开(公告)日：2006-09-07
申请号：US11164488
申请日：2005-11-24
申请人： Neng-Kuo Chen , Teng-Chun Tsai , Chien-Chung Huang , Tsai-Fu Chen , Wen-Han Hung
发明人： Neng-Kuo Chen , Teng-Chun Tsai , Chien-Chung Huang , Tsai-Fu Chen , Wen-Han Hung
IPC分类号： H01L21/00 , H01L21/31
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/56 , H01L21/02274 , H01L21/02348 , H01L21/3185 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7843
摘要： A method for fabricating an ultra-high tensile-stressed nitride film is disclosed. A PECVD process is first performed to deposit a transitional silicon nitride film over a substrate. The transitional silicon nitride film has a first concentration of hydrogen atoms. The transitional silicon nitride film is subjected to UV curing process for reducing the first concentration of hydrogen atoms to a second concentration of hydrogen atoms.
摘要翻译：公开了一种用于制造超高拉伸应力氮化物膜的方法。首先执行PECVD处理以在衬底上沉积过渡氮化硅膜。过渡氮化硅膜具有第一浓度的氢原子。将过渡氮化硅膜进行UV固化，将氢原子的第一浓度降低至第二浓度的氢原子。

82. 发明申请

US20080142902A1 METHOD FOR FABRICATING ULTRA-HIGH TENSILE-STRESSED FILM AND STRAINED-SILICON TRANSISTORS THEREOF 有权
标题翻译：制造超高压应力薄膜及其应变硅晶体管的方法
公开(公告)号：US20080142902A1
公开(公告)日：2008-06-19
申请号：US12013482
申请日：2008-01-14
申请人： Neng-Kuo Chen , Teng-Chun Tsai , Chien-Chung Huang , Tsai-Fu Chen , Wen-Han Hung
发明人： Neng-Kuo Chen , Teng-Chun Tsai , Chien-Chung Huang , Tsai-Fu Chen , Wen-Han Hung
IPC分类号： H01L29/78
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/56 , H01L21/02274 , H01L21/02348 , H01L21/3185 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7843
摘要： A metal-oxide-semiconductor (MOS) transistor device is disclosed. The MOS transistor device comprises a semiconductor substrate; a gate structure on the semiconductor substrate; source/drain regions on the semiconductor substrate adjacent to the gate structure; an ultra-high tensile-stressed nitride film having a hydrogen concentration of less than 1E22 atoms/cm3 covering the gate structure and the source/drain regions; and an inter-layer dielectric (ILD) film over the ultra-high tensile-stressed nitride film.
摘要翻译：公开了一种金属氧化物半导体（MOS）晶体管器件。 MOS晶体管器件包括半导体衬底; 半导体衬底上的栅极结构; 与栅极结构相邻的半导体衬底上的源/漏区; 具有覆盖栅极结构和源极/漏极区域的小于1E22原子/ cm 3的氢浓度的超高拉伸应力氮化物膜; 和超高拉伸应力氮化物膜上的层间电介质（ILD）膜。

83. 发明申请

US20070111420A1 CMOS AND MOS DEVICE 审中-公开
标题翻译： CMOS和MOS器件
公开(公告)号：US20070111420A1
公开(公告)日：2007-05-17
申请号：US11309204
申请日：2006-07-13
申请人： Pei-Yu Chou , Min-Chieh Yang , Wen-Han Hung
发明人： Pei-Yu Chou , Min-Chieh Yang , Wen-Han Hung
IPC分类号： H01L21/8238 , H01L29/80
CPC分类号： H01L21/823864 , H01L21/823807 , H01L29/7833 , H01L29/7843
摘要： A complementary metal-oxide-semiconductor (CMOS) device comprising a substrate, a first type of metal-oxide-semiconductor (MOS) transistor, a second type of MOS transistor, an etching stop layer, a first stress layer and a second stress layer is provided. The substrate has a first active region and a second active region. The first active region is isolated from the second active region through an isolation structure. The first type of MOS transistor is disposed in the first active region of the substrate; the second type of MOS transistor is disposed in the second active region of the substrate. The etching stop layer covers conformably the first type of MOS transistor, the second type of MOS transistor and the isolation structure. The first stress layer is disposed on the etching stop layer in the first active region and the second stress layer is disposed on the etching stop layer in the second active region.
摘要翻译：一种互补金属氧化物半导体（CMOS）器件，包括衬底，第一类型的金属氧化物半导体（MOS）晶体管，第二类型的MOS晶体管，蚀刻停止层，第一应力层和第二应力层被提供。衬底具有第一有源区和第二有源区。第一有源区通过隔离结构与第二有源区隔离。第一类型的MOS晶体管设置在基板的第一有源区中; 第二类型的MOS晶体管设置在衬底的第二有源区中。蚀刻停止层适合地覆盖第一类型的MOS晶体管，第二类型的MOS晶体管和隔离结构。第一应力层设置在第一有源区中的蚀刻停止层上，第二应力层设置在第二有源区中的蚀刻停止层上。

84. 发明授权

US6153539A Liquid phase deposition method for growing a titanium dioxide on a gallium arsenide substrate 有权
标题翻译：用于在砷化镓衬底上生长二氧化钛的液相沉积方法
公开(公告)号：US6153539A
公开(公告)日：2000-11-28
申请号：US265974
申请日：1999-03-11
申请人： Ming-Kwei Lee , Wen-Han Hung
发明人： Ming-Kwei Lee , Wen-Han Hung
IPC分类号： C23C18/00 , H01L21/316 , H01L21/324
CPC分类号： H01L21/316 , C23C18/00
摘要： A liquid phase deposition method for growing a titanium dioxide on the gallium arsenide substrate is disclosed. Wherein the solution of hexafluorotitanic acid (H.sub.2 TiF.sub.6) is added with nitric acid (HNO.sub.3) and boric acid (H.sub.3 BO.sub.3) or only added with a nitric acid. Thus a titanium dioxide film is grown on the gallium arsenide substrate which is the most important material of semiconductor. The refractive index will achieve to a value of 2.5. The growth rate can be exactly controlled by the concentration of the nitric acid. The present invention has the advantages of lower cost and low growing temperature. Not only the industrial necessity is satisfied, but also the disadvantages from other growing process having a high cost and expensive equipment is avoided. Thus, the present invention is potentially used in the process of integrated circuits, such as being used in the memory structure with a higher dielectric constant.Moreover, since the titanium dioxide has special photoelectric properties, which can be employed in the waveguides, optic filters, antireflecting coatings and other semiconductor elements of photoelectric compounds. From the experimental result, it is appreciated that the liquid phase deposition method for growing a titanium dioxide on the gallium arsenide substrate of the present invention is useful in many applications.
摘要翻译：公开了一种用于在砷化镓衬底上生长二氧化钛的液相沉积方法。其中六氟钛酸（H 2 TiF 6）的溶液中加入硝酸（HNO3）和硼酸（H3BO3）或仅加入硝酸。因此，在作为半导体最重要的材料的砷化镓衬底上生长二氧化钛膜。折射率将达到2.5。生长速度可以通过硝酸的浓度来精确控制。本发明具有成本低，生长温度低的优点。不仅满足了工业的需要，而且避免了具有高成本和昂贵的设备的其他生长工艺的缺点。因此，本发明潜在地用于集成电路的过程中，例如用于具有较高介电常数的存储器结构中。此外，由于二氧化钛具有特殊的光电特性，其可用于光电化合物的波导，光学滤波器，抗反射涂层和其它半导体元件。从实验结果可以看出，用于在本发明的砷化镓衬底上生长二氧化钛的液相沉积方法在许多应用中是有用的。

85. 发明申请

US20120256276A1 Metal Gate and Fabricating Method Thereof 有权
标题翻译：金属门及其制造方法
公开(公告)号：US20120256276A1
公开(公告)日：2012-10-11
申请号：US13082387
申请日：2011-04-07
申请人： Guang-Yaw Hwang , Chun-Hsien Lin , Hung-Ling Shih , Jiunn-Hsiung Liao , Zhi-Cheng Lee , Shao-Hua Hsu , Yi-Wen Chen , Cheng-Guo Chen , Jung-Tsung Tseng , Chien-Ting Lin , Tong-Jyun Huang , Jie-Ning Yang , Tsung-Lung Tsai , Po-Jui Liao , Chien-Ming Lai , Ying-Tsung Chen , Cheng-Yu Ma , Wen-Han Hung , Che-Hua Hsu
发明人： Guang-Yaw Hwang , Chun-Hsien Lin , Hung-Ling Shih , Jiunn-Hsiung Liao , Zhi-Cheng Lee , Shao-Hua Hsu , Yi-Wen Chen , Cheng-Guo Chen , Jung-Tsung Tseng , Chien-Ting Lin , Tong-Jyun Huang , Jie-Ning Yang , Tsung-Lung Tsai , Po-Jui Liao , Chien-Ming Lai , Ying-Tsung Chen , Cheng-Yu Ma , Wen-Han Hung , Che-Hua Hsu
IPC分类号： H01L29/78 , H01L21/3205
CPC分类号： H01L29/517 , H01L21/28088 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/513 , H01L29/66545 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7843 , H01L29/7845 , H01L29/7846
摘要： A method of manufacturing a metal gate is provided. The method includes providing a substrate. Then, a gate dielectric layer is formed on the substrate. A multi-layered stack structure having a work function metal layer is formed on the gate dielectric layer. An O2 ambience treatment is performed on at least one layer of the multi-layered stack structure. A conductive layer is formed on the multi-layered stack structure.
摘要翻译：提供一种制造金属栅极的方法。该方法包括提供基板。然后，在基板上形成栅极电介质层。在栅极电介质层上形成具有功函数金属层的多层堆叠结构。在多层堆叠结构的至少一层上进行O2气氛处理。在多层堆叠结构上形成导电层。

86. 发明授权

US07662730B2 Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereof 有权
标题翻译：制造超高拉伸应力膜及其应变硅晶体管的方法
公开(公告)号：US07662730B2
公开(公告)日：2010-02-16
申请号：US11164488
申请日：2005-11-24
申请人： Neng-Kuo Chen , Teng-Chun Tsai , Chien-Chung Huang , Tsai-Fu Chen , Wen-Han Hung
发明人： Neng-Kuo Chen , Teng-Chun Tsai , Chien-Chung Huang , Tsai-Fu Chen , Wen-Han Hung
IPC分类号： H01L21/471
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/56 , H01L21/02274 , H01L21/02348 , H01L21/3185 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7843
摘要： A method for fabricating an ultra-high tensile-stressed nitride film is disclosed. A PECVD process is first performed to deposit a transitional silicon nitride film over a substrate. The transitional silicon nitride film has a first concentration of hydrogen atoms. The transitional silicon nitride film is subjected to UV curing process for reducing the first concentration of hydrogen atoms to a second concentration of hydrogen atoms.
摘要翻译：公开了一种用于制造超高拉伸应力氮化物膜的方法。首先执行PECVD处理以在衬底上沉积过渡氮化硅膜。过渡氮化硅膜具有第一浓度的氢原子。将过渡氮化硅膜进行UV固化，将氢原子的第一浓度降低至第二浓度的氢原子。

87. 发明授权

US07655987B2 Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereof 有权
标题翻译：制造超高拉伸应力膜及其应变硅晶体管的方法
公开(公告)号：US07655987B2
公开(公告)日：2010-02-02
申请号：US12013482
申请日：2008-01-14
申请人： Neng-Kuo Chen , Teng-Chun Tsai , Chien-Chung Huang , Tsai-Fu Chen , Wen-Han Hung
发明人： Neng-Kuo Chen , Teng-Chun Tsai , Chien-Chung Huang , Tsai-Fu Chen , Wen-Han Hung
IPC分类号： H01L29/772
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/56 , H01L21/02274 , H01L21/02348 , H01L21/3185 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7843
摘要： A metal-oxide-semiconductor (MOS) transistor device is disclosed. The MOS transistor device comprises a semiconductor substrate; a gate structure on the semiconductor substrate; source/drain regions on the semiconductor substrate adjacent to the gate structure; an ultra-high tensile-stressed nitride film having a hydrogen concentration of less than 1E22 atoms/cm3 covering the gate structure and the source/drain regions; and an inter-layer dielectric (ILD) film over the ultra-high tensile-stressed nitride film.
摘要翻译：公开了金属氧化物半导体（MOS）晶体管器件。 MOS晶体管器件包括半导体衬底; 半导体衬底上的栅极结构; 与栅极结构相邻的半导体衬底上的源/漏区; 覆盖栅极结构和源极/漏极区域的具有小于1E22原子/ cm3的氢浓度的超高拉伸应力氮化物膜; 和超高拉伸应力氮化物膜上的层间电介质（ILD）膜。

88. 发明授权

US07601587B2 Fabricating method of CMOS 有权
标题翻译： CMOS的制作方法
公开(公告)号：US07601587B2
公开(公告)日：2009-10-13
申请号：US11924571
申请日：2007-10-25
申请人： Pei-Yu Chou , Min-Chieh Yang , Wen-Han Hung
发明人： Pei-Yu Chou , Min-Chieh Yang , Wen-Han Hung
IPC分类号： H01L21/8242
CPC分类号： H01L21/823807 , H01L21/823864 , H01L29/7833 , H01L29/7843
摘要： A method of forming a metal-oxide-semiconductor (MOS) device is provided. The method includes the following steps. First, a conductive type MOS transistor is formed on a substrate. Then, a first etching stop layer is formed over the substrate to cover conformably the conductive type MOS transistor. Thereafter, a stress layer is formed over the first etching stop layer. Then, a second etching stop layer is formed over the stress layer.
摘要翻译：提供一种形成金属氧化物半导体（MOS）器件的方法。该方法包括以下步骤。首先，在基板上形成导电型MOS晶体管。然后，在基板上形成第一蚀刻停止层，以覆盖适形的导电型MOS晶体管。此后，在第一蚀刻停止层上形成应力层。然后，在应力层上形成第二蚀刻停止层。

89. 发明申请

US20080128831A1 CMOS AND MOS DEVICE 审中-公开
标题翻译： CMOS和MOS器件
公开(公告)号：US20080128831A1
公开(公告)日：2008-06-05
申请号：US11930120
申请日：2007-10-31
申请人： Pei-Yu Chou , Min-Chieh Yang , Wen-Han Hung
发明人： Pei-Yu Chou , Min-Chieh Yang , Wen-Han Hung
IPC分类号： H01L27/00
CPC分类号： H01L21/823807 , H01L27/092 , H01L29/6659 , H01L29/7833 , H01L29/7843
摘要： A metal-oxide-semiconductor (MOS) transistor comprising a conductive type MOS transistor, a first etching stop layer, a stress layer and a second etching stop layer is provided. The conductive MOS transistor is disposed on a substrate. The first etching stop layer is covered conformably the conductive type MOS transistor. Furthermore, the stress layer is disposed on the first etching stop layer. The second etching stop layer is disposed on the stress layer.
摘要翻译：提供了包括导电型MOS晶体管，第一蚀刻停止层，应力层和第二蚀刻停止层的金属氧化物半导体（MOS）晶体管。导电MOS晶体管设置在基板上。第一蚀刻停止层被一致地覆盖导电型MOS晶体管。此外，应力层设置在第一蚀刻停止层上。第二蚀刻停止层设置在应力层上。

90. 发明申请

US20080096343A1 FABRICATING METHOD OF CMOS 有权
标题翻译： CMOS制作方法
公开(公告)号：US20080096343A1
公开(公告)日：2008-04-24
申请号：US11924571
申请日：2007-10-25
申请人： Pei-Yu Chou , Min-Chieh Yang , Wen-Han Hung
发明人： Pei-Yu Chou , Min-Chieh Yang , Wen-Han Hung
IPC分类号： H01L21/98
CPC分类号： H01L21/823807 , H01L21/823864 , H01L29/7833 , H01L29/7843
摘要： A method of forming a metal-oxide-semiconductor (MOS) device is provided. The method includes the following steps. First, a conductive type MOS transistor is formed on a substrate. Then, a first etching stop layer is formed over the substrate to cover conformably the conductive type MOS transistor. Thereafter, a stress layer is formed over the first etching stop layer. Then, a second etching stop layer is formed over the stress layer.
摘要翻译：提供一种形成金属氧化物半导体（MOS）器件的方法。该方法包括以下步骤。首先，在基板上形成导电型MOS晶体管。然后，在基板上形成第一蚀刻停止层，以覆盖适形的导电型MOS晶体管。此后，在第一蚀刻停止层上形成应力层。然后，在应力层上形成第二蚀刻停止层。

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