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81. 发明授权

US08502241B2 Method of driving a light emitting device 有权
公开(公告)号：US08502241B2
公开(公告)日：2013-08-06
申请号：US13347780
申请日：2012-01-11
申请人： Shunpei Yamazaki , Mitsuaki Osame , Jun Koyama
发明人： Shunpei Yamazaki , Mitsuaki Osame , Jun Koyama
IPC分类号： H01L33/00
CPC分类号： H05B33/08 , H01L27/124 , H05B33/0812 , H05B33/0896
摘要： The present invention is characterized in that a transistor with its L/W set to 10 or larger is employed, and that |VDS| of the transistor is set equal to or larger than 1 V and equal to or less than |VGS−Vth|. The transistor is used as a resistor so that the resistance of a light emitting element can be held by the transistor. This slows down an increase in internal resistance of the light emitting element and the resultant current value reduction. Accordingly, a change with time in light emission luminance is reduced and the reliability is improved.

82. 发明授权

US08492766B2 Information device 有权
公开(公告)号：US08492766B2
公开(公告)日：2013-07-23
申请号：US13348707
申请日：2012-01-12
申请人： Shunpei Yamazaki , Jun Koyama
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： H01L29/04
CPC分类号： G06F3/0421 , G06F3/03545 , H01L27/14609 , H01L27/14643 , H01L27/14678 , H01L27/288 , H01L27/307 , H01L27/3227 , H01L27/323 , H01L27/3234 , H01L27/3244 , H04N1/00347 , H04N1/00392 , H04N1/024 , H04N1/02445 , H04N1/02472 , H04N1/02805 , H04N2201/0081 , H04N2201/0089
摘要： Problems exist in areas such as image visibility, endurance of the device, precision, miniaturization, and electric power consumption in an information device having a conventional resistive film method or optical method pen input function. Both EL elements and photoelectric conversion elements are arranged in each pixel of a display device in an information device of the present invention having a pen input function. Information input is performed by the input of light to the photoelectric conversion elements in accordance with a pen that reflects light by a pen tip. An information device with a pen input function, capable of displaying a clear image without loss of brightness in the displayed image, having superior endurance, capable of being miniaturized, and having good precision can thus be obtained.

83. 发明授权

US08445962B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US08445962B2
公开(公告)日：2013-05-21
申请号：US12911083
申请日：2010-10-25
申请人： Satoshi Murakami , Shunpei Yamazaki , Jun Koyama , Mitsuaki Osamè , Yukio Tanaka , Yoshiharu Hirakata
发明人： Satoshi Murakami , Shunpei Yamazaki , Jun Koyama , Mitsuaki Osamè , Yukio Tanaka , Yoshiharu Hirakata
IPC分类号： H01L29/04
CPC分类号： H01L27/1244 , G02F1/13454 , G02F1/136213 , H01L27/1255 , H01L27/1259 , H01L27/15 , H01L29/458 , H01L29/66757 , H01L29/786 , H01L29/78645 , H01L29/78675 , H01L31/02164
摘要： An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability. The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15V/min, there is no wrap around on the electrode, and film peeling can be prevented.

84. 发明授权

US08421350B2 Electro-optical device and electronic device 有权
公开(公告)号：US08421350B2
公开(公告)日：2013-04-16
申请号：US13492823
申请日：2012-06-09
申请人： Shunpei Yamazaki , Jun Koyama , Kunitaka Yamamoto , Toshimitsu Konuma
发明人： Shunpei Yamazaki , Jun Koyama , Kunitaka Yamamoto , Toshimitsu Konuma
IPC分类号： H01J1/62
CPC分类号： H01L51/5253 , H01L23/3171 , H01L27/1214 , H01L27/1248 , H01L27/322 , H01L27/3244 , H01L27/3258 , H01L29/78621 , H01L51/529 , H01L51/56 , H01L2924/0002 , Y10S428/917 , H01L2924/00
摘要： An object of the present invention is to provide an EL display device, which has a high operating performance and reliability.A third passivation film 45 is disposed under an EL element 203 which comprises a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, to make a structure in which heat generated by the EL element 203 is radiated. Further, the third passivation film 45 prevents alkali metals within the EL element 203 from diffusing into the TFTs side, and prevents moisture and oxygen of the TFTs side from penetrating into the EL element 203. More preferably, heat radiating effect is given to a fourth passivation film 50 to make the EL element 203 to be enclosed by heat radiating layers.

85. 发明授权

US08421135B2 Semiconductor device, and manufacturing method thereof 有权
公开(公告)号：US08421135B2
公开(公告)日：2013-04-16
申请号：US12323724
申请日：2008-11-26
申请人： Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara , Saishi Fujikawa
发明人： Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara , Saishi Fujikawa
IPC分类号： H01L31/062
CPC分类号： H01L27/1222 , G02F1/13454 , G02F1/13458 , H01L27/124 , H01L27/156 , H01L29/6675 , H01L29/66765
摘要： In a display device such as a liquid crystal display device, a large-sized display screen is realized under low power consumption. A surface of a source wiring line of a pixel portion employed in an active matrix type liquid crystal display device is processed by way of a plating process operation so as to lower a resistance value of this source wiring line. The source wiring line of the pixel portion is manufactured at a step different from a step for manufacturing a source wiring line of a drive circuit portion. Further, electrodes of a terminal portion are processed by a plating process operation so as to reduce a resistance value thereof.

86. 发明授权

US08400187B2 Logic circuit and semiconductor device 有权
标题翻译：逻辑电路和半导体器件
公开(公告)号：US08400187B2
公开(公告)日：2013-03-19
申请号：US12901057
申请日：2010-10-08
申请人： Shunpei Yamazaki , Jun Koyama , Masashi Tsubuku , Kosei Noda
发明人： Shunpei Yamazaki , Jun Koyama , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L25/00 , H03K19/094 , H03B1/00
CPC分类号： H01L29/7869 , H01L22/34 , H01L27/0207 , H01L27/1225 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.
摘要翻译：逻辑电路包括具有使用氧化物半导体形成的沟道形成区域的薄膜晶体管，以及通过关闭薄膜晶体管而使端子中的一个成为浮置状态的电容器。氧化物半导体的氢浓度为5×1019（原子/ cm3）以下，因此在不产生电场的状态下基本上用作绝缘体。因此，可以减小薄膜晶体管的截止电流，从而通过薄膜晶体管抑制存储在电容器中的电荷的泄漏。因此，可以防止逻辑电路的故障。此外，可以通过减小薄膜晶体管的截止电流来降低在逻辑电路中流动的过量的电流，导致逻辑电路的低功耗。

87. 发明授权

US08389417B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08389417B2
公开(公告)日：2013-03-05
申请号：US12945516
申请日：2010-11-12
申请人： Shunpei Yamazaki , Jun Koyama
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L27/1207 , H01L21/8221 , H01L27/0688 , H01L27/1225 , H01L29/24
摘要： An object is to provide a semiconductor device with a novel structure. A semiconductor device includes a first transistor, which includes a channel formation region provided in a substrate including a semiconductor material, impurity regions, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode, and a second transistor, which includes an oxide semiconductor layer over the substrate including the semiconductor material, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode. The second source electrode and the second drain electrode include an oxide region formed by oxidizing a side surface thereof, and at least one of the first gate electrode, the first source electrode, and the first drain electrode is electrically connected to at least one of the second gate electrode, the second source electrode, and the second drain electrode.
摘要翻译：目的是提供具有新颖结构的半导体器件。半导体器件包括第一晶体管，其包括设置在包括半导体材料的衬底中的沟道形成区域，杂质区域，第一栅极绝缘层，第一栅极电极和第一源极电极以及第一漏极电极，第二晶体管，其包括在包括半导体材料的衬底上的氧化物半导体层，第二源电极和第二漏电极，第二栅极绝缘层和第二栅电极。第二源电极和第二漏极包括通过氧化其侧表面而形成的氧化物区域，并且第一栅电极，第一源电极和第一漏极电极中的至少一个电连接到第二栅电极，第二源电极和第二漏电极。

88. 发明授权

US08344788B2 Semiconductor device 有权
公开(公告)号：US08344788B2
公开(公告)日：2013-01-01
申请号：US13010024
申请日：2011-01-20
申请人： Shunpei Yamazaki , Jun Koyama
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： H03K17/687
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/1255 , H01L29/045 , H01L29/0657 , H01L29/1033 , H01L29/24 , H01L29/45 , H01L29/78645 , H03K17/0822
摘要： The semiconductor device includes a power element which is in an on state when voltage is not applied to a gate, a switching field-effect transistor for applying first voltage to the gate of the power element, and a switching field-effect transistor for applying voltage lower than the first voltage to the gate of the power element. The switching field-effect transistors have small off-state current.

89. 发明授权

US08344374B2 Semiconductor device comprising oxide semiconductor layer 有权
标题翻译：包括氧化物半导体层的半导体器件
公开(公告)号：US08344374B2
公开(公告)日：2013-01-01
申请号：US12898366
申请日：2010-10-05
申请人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Yasuo Nakamura , Junpei Sugao , Hideki Uochi
发明人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Yasuo Nakamura , Junpei Sugao , Hideki Uochi
IPC分类号： H01L29/10
CPC分类号： H01L29/78669 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L27/1288 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/78678 , H01L29/7869
摘要： It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.
摘要翻译：本发明的目的是提供一种由具有良好的显示质量的显示装置代表的半导体器件，其中在半导体层和电极之间的连接部分中产生的寄生电阻被抑制，并且具有诸如电压降等的不利影响防止由于布线电阻而导致像素的信号布线，灰度级的缺陷等。为了实现上述目的，根据本发明的半导体器件可以具有这样的结构，其中具有低电阻的布线连接到薄膜晶体管，其中包括具有高氧亲和力的金属的源电极和漏电极是连接到具有抑制的杂质浓度的氧化物半导体层。另外，包含氧化物半导体的薄膜晶体管也可以被要被密封的绝缘膜包围。

90. 发明申请

US20120326951A1 Display Device 有权
标题翻译：显示设备
公开(公告)号：US20120326951A1
公开(公告)日：2012-12-27
申请号：US13529129
申请日：2012-06-21
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
IPC分类号： G09G3/30
CPC分类号： G02F1/1345
摘要： To provide a display device with little signal delay and a display device that can operate with low power consumption, parasitic capacitance between a common wiring that applies a common potential to a plurality of pixels and signal lines that input signals for driving the pixels is avoided. Specifically, the common wiring is routed outwardly with respect to an external input terminal to which a signal is input from the, outside, to avoid intersections of the signal lines and the common wiring. Thus, parasitic capacitance between the common wiring and the signal lines is avoided, so that the display device can operate at high speed with low power consumption.
摘要翻译：为了提供几乎没有信号延迟的显示装置和能够以低功耗工作的显示装置，避免了对多个像素施加共同电位的公共布线与输入用于驱动像素的信号的信号线之间的寄生电容。具体地，公共布线相对于从外部输入信号的外部输入端子向外布线，以避免信号线和公共布线的交叉。因此，避免了公共布线和信号线之间的寄生电容，使得显示装置能够以低功耗高速运行。

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