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    • 86. 发明授权
    • Map 3D-converter system
    • 映射3D转换器系统
    • US06593926B1
    • 2003-07-15
    • US09473993
    • 1999-12-29
    • Hiroshi YamaguchiHiroshi Maruyama
    • Hiroshi YamaguchiHiroshi Maruyama
    • G06T1510
    • G06T17/10
    • The map 3D-converter system for converting 2D maps into a 3D map, of the present invention, comprises: a 2D map data storage device for storing 2D map data with an attribute indicating that the 2D map data includes horizontal positions of the top view, or vertical positions of a side view; a 3D conversion instructor for specifying an identification value for identifying a target map and a reference position for developing the target map in a 3D space; a 3D converter for converting the 2D map data, read from the 2D map data storage device, into 3D map data, based on the identification value and the reference position specified by the 3D conversion instructor; and a 3D map data storage device for storing the 3D map data produced by the 3D converter.
    • 用于将2D地图转换为3D地图的地图3D转换器系统包括:2D地图数据存储装置,用于存储具有指示2D地图数据包括顶视图的水平位置的属性的2D地图数据, 或侧视图的垂直位置; 用于指定用于识别目标地图的识别值和用于在3D空间中开发目标地图的参考位置的3D转换指导器; 3D转换器,用于基于由3D转换指导者指定的识别值和参考位置,将从2D地图数据存储装置读取的2D地图数据转换成3D地图数据; 以及用于存储由3D转换器产生的3D地图数据的3D地图数据存储装置。
    • 87. 发明授权
    • Semiconductor storage device
    • 半导体存储设备
    • US06522565B2
    • 2003-02-18
    • US10006670
    • 2001-12-10
    • Yasuhisa ShimazakiKenichi OsadaHiroshi MaruyamaNaotoshi Nishioka
    • Yasuhisa ShimazakiKenichi OsadaHiroshi MaruyamaNaotoshi Nishioka
    • G11C506
    • G11C7/18G11C11/419
    • A semiconductor storage device controls crosstalk of write data to read data during reading and writing operations performed in the same cycle. The device has a plurality of work lines WL, a plurality of bit lines LBL, memory cells CELL which are connected to the word lines and the bit lines, reading global bit lines RGBL connected to a sense amplifier SA and writing global bit lines WBGL connected to a write amplifier WA. A selection circuit YSWn selectively connects the reading and writing global bit lines with the local bit lines. For first and second writing global bit lines arranged between first and second reading global bit lines, a distance between the first writing global bit line and the first reading global bit line, or a distance between the second writing global bit line and the second reading global bit line being is longer than a distance between the first and second writing global bit lines. Alternatively, the writing and reading global bit lines are formed in different wiring layers in the substrate of the device.
    • 半导体存储装置控制在同一周期中执行的读写操作期间写入数据的串扰以读取数据。 该器件具有多个工作线WL,多个位线LBL,连接到字线和位线的存储单元CELL,读取连接到读出放大器SA的全局位线RGBL,并连接全局位线WBGL 写入放大器WA。 选择电路YSWn选择性地将读写全局位线与本地位线连接。 对于布置在第一和第二读取全局位线之间的第一和第二写入全局位线,第一写入全局位线和第一读取全局位线之间的距离,或者第二写入全局位线和第二读取全局位线之间的距离 位线长于第一和第二写入全局位线之间的距离。 或者,写入和读取全局位线形成在器件的衬底中的不同布线层中。