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81. 发明授权

US4555479A Color photographic light-sensitive material 失效
标题翻译：彩色摄影感光材料
公开(公告)号：US4555479A
公开(公告)日：1985-11-26
申请号：US614091
申请日：1984-05-25
申请人： Nobuo Sakai , Masaki Okazaki , Yoshio Inagaki
发明人： Nobuo Sakai , Masaki Okazaki , Yoshio Inagaki
IPC分类号： G03C7/26 , C07D231/46 , C07D231/48 , C07D235/30 , C07D239/42 , C07D251/46 , C07D251/50 , C07D251/70 , C07D253/06 , C07D263/46 , G03C7/30 , G03C7/38 , G03C7/384 , G03C7/392 , G03C7/40
CPC分类号： C07D231/48 , C07D251/50 , C07D251/70 , G03C7/3012 , G03C7/38 , G03C7/3924
摘要： A silver halide color photographic light-sensitive material comprising a support having coated thereon at least one silver halide emulsion layer, the color photographic light-sensitive material having at least one layer containing at least one 2-equivalent magenta coupler of the 5-pyrazolone type represented by the following general formula (I): ##STR1## wherein W represents a phenyl group substituted with at least one substituent selected from the group consisting of a halogen atom, an alkyl group, an alkoxy group, an alkoxycarbonyl group and a cyano group; Y represents an acylamino group or an anilino group; and Z represents a group capable of being released upon coupling, and at least one compound represented by the following general formula (II): ##STR2## wherein R.sup.1 and R.sup.2, which may be the same or different, each represents a hydrogen atom, an alkyl group or an aryl group, provided that both R.sup.1 and R.sup.2 do not represent hydrogen atoms at the same time; Z.sup.1 represents a methine group, a substituted machine group or the group --N.dbd.; and Q represents an atomic group which contains a nitrogen atom, a sulfur atom or an oxygen atom and is necessary to form a 5-membered or a 6-membered heterocyclic ring together with the group ##STR3## The silver halide color photographic light-sensitive material can provide an excellent magenta color image without the occurrence of stain, even when the color photographic material is processed in a processing solution under the running condition.
摘要翻译：一种卤化银彩色摄影感光材料，其包含在其上涂覆有至少一个卤化银乳剂层的载体，所述彩色照相感光材料具有至少一层含有5-吡唑啉酮型至少一种2-当量品红成色剂由以下通式（I）表示：其中W表示被至少一个选自卤素原子，烷基，烷氧基，烷氧基羰基和氰基的取代基取代的苯基 ; Y代表酰氨基或苯胺基; Z表示能够在偶合时释放的基团，以及至少一种由以下通式（II）表示的化合物：其中R 1和R 2可以相同或不同，各自表示氢原子，烷基或芳基，条件是R 1和R 2不同时表示氢原子; Z 1表示次甲基，取代的基团或基团-N =; 并且Q表示含有氮原子，硫原子或氧原子的原子团，并且与基团一起形成5元或6元杂环是必需的。卤化银彩色照相感光即使在运行状态下在处理溶液中处理彩色照相材料，材料也可以提供优异的品红色图像而不发生污点。

82. 发明授权

US4412951A Reagents for measuring lipase activity 失效
标题翻译：测定脂肪酶活性的试剂
公开(公告)号：US4412951A
公开(公告)日：1983-11-01
申请号：US316025
申请日：1981-10-28
申请人： Yoshio Inagaki , Masaki Okazaki , Shinsaku Fujita
发明人： Yoshio Inagaki , Masaki Okazaki , Shinsaku Fujita
IPC分类号： G01N33/50 , C09B43/20 , C12Q1/44 , G01N33/92 , C07C107/08
CPC分类号： C09B43/202 , C12Q1/44 , G01N2333/00
摘要： A reagent for measuring a lipase activity comprised of a higher fatty acid ester having the general formula ##STR1## wherein R.sup.1 is a straight chain alkyl group; R.sup.2 is hydrogen or a halogen atom; R.sup.3 and R.sup.4 are independently a nitro group, an alkylsulfonyl group, a substituted alkylsulfonyl group or a trifluoromethyl group; G is an --SO.sub.3 M group or a group having at least one --SO.sub.3 M where M represents sodium or potassium, or, when R.sup.4 has a sulfonic acid group, may be a hydrogen atom; and Q is hydrogen, a halogen atom, an alkyl group, an alkoxy-substituted alkyl group, an alkoxy group, an alkoxy-substituted alkoxy group, a sulfonamido group, a sulfamoyl group, a carbonamido group, a carbamoyl group, or an alkylsulfonyl group. The reagent is capable of releasing a dye on enzymatic hydrolysis by the action of lipase. Because of the released dye has a light absorption zone within the longer wavelength region, it is not substantially disturbed by colored matter contained within blood making it possible to obtain excellent operability and reproducibility in the measurement of lipase activity within blood.
摘要翻译：一种用于测量脂肪酶活性的试剂，其由通式为“IMAGE”的高级脂肪酸酯组成，其中R1为直链烷基; R2是氢或卤素原子; R3和R4独立地是硝基，烷基磺酰基，取代的烷基磺酰基或三氟甲基; G是-SO 3 M基或具有至少一个-SO 3 M的基团，其中M表示钠或钾，或者当R 4具有磺酸基时，可以是氢原子; 并且Q是氢，卤素原子，烷基，烷氧基取代的烷基，烷氧基，烷氧基取代的烷氧基，亚磺酰氨基，氨磺酰基，碳酰氨基，氨基甲酰基或烷基磺酰基组。试剂能够通过脂肪酶的作用在酶水解上释放染料。由于释放的染料在较长波长区域内具有吸光区域，所以基本上不会受到血液中含有的有色物质的干扰，从而可以获得优异的可操作性和在血液中测定脂肪酶活性的可重复性。

83. 发明授权

US4336322A Color photographic light-sensitive material 失效
标题翻译：彩色摄影感光材料
公开(公告)号：US4336322A
公开(公告)日：1982-06-22
申请号：US170261
申请日：1980-07-18
申请人： Shinsaku Fujita , Koichi Koyama , Yoshio Inagaki , Kokichi Waki
发明人： Shinsaku Fujita , Koichi Koyama , Yoshio Inagaki , Kokichi Waki
IPC分类号： C07D263/56 , G03C7/305 , G03C1/40 , G03C1/10 , G03C5/54
CPC分类号： C07D263/56 , G03C7/30547
摘要： A color photographic light-sensitive material is described containing a dye-releasing redox compound having the following formula: ##STR1## wherein G represents a hydroxy group or a group providing a hydroxy group by hydrolysis;Col represents a dye or a dye precursor;R.sup.1 and R.sup.2, which may be the same or different, each represents an alkyl group or an aromatic group, and R.sup.1 and R.sup.2 together can form a ring;R.sup.3 represents hydrogen, an alkyl group or an aromatic group;R.sup.4 can represent an alkyl group or an aromatic group;R.sup.5 can represent an alkyl group, an alkoxy group, an alkylthio group, an arylthio group, a halogen atom or an acylamino group;n is 0, 1 or 2; andR.sup.4 and an R.sup.5 together can form a heterocyclic ring, R.sup.1 and R.sup.4 together can form a heterocyclic ring, R.sup.1 and an R.sup.5 together can form a ring, R.sup.1, R.sup.2 and R.sup.3 together can form an adamantyl ring, and the total number of carbon atoms of R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sub.n.sup.5 is more than 7.
摘要翻译：含有具有下式的染料释放氧化还原化合物的彩色照相感光材料：其中G表示羟基或通过水解提供羟基的基团; Col代表染料或染料前体; R 1和R 2可以相同或不同，各自表示烷基或芳基，R 1和R 2可以一起形成环; R3表示氢，烷基或芳基; R4可以表示烷基或芳基; R5可以表示烷基，烷氧基，烷硫基，芳硫基，卤原子或酰氨基; n为0,1或2; 并且R4和R5一起可以形成杂环，R 1和R 4一起可以形成杂环，R 1和R 5一起可以形成环，R 1，R 2和R 3一起可以形成金刚烷基环，并且碳数 R1，R2，R3，R4和Rn5的原子大于7。

84. 发明授权

US09449732B2 Charge transport film, method for producing the same, and light-emitting element and photoelectric conversion element using the same 有权
标题翻译：电荷输送膜及其制造方法以及使用其的发光元件和光电转换元件
公开(公告)号：US09449732B2
公开(公告)日：2016-09-20
申请号：US13513132
申请日：2010-11-29
申请人： Naoyuki Hayashi , Yoshio Inagaki , Tasuku Satou , Kana Morohashi , Koji Takaku , Ryo Nishio
发明人： Naoyuki Hayashi , Yoshio Inagaki , Tasuku Satou , Kana Morohashi , Koji Takaku , Ryo Nishio
IPC分类号： H01B1/00 , H01L51/00 , B05D5/00 , H01B1/12 , H05B33/22 , H01L51/50
CPC分类号： H01B1/121 , H01L51/0003 , H01L51/0026 , H01L51/0035 , H01L51/0037 , H01L51/004 , H01L51/0076 , H01L51/0085 , H01L51/5048 , H01L51/5088 , H05B33/22 , Y02E10/549 , Y02P70/521
摘要： The present invention provides a charge transport film which is prepared through subjecting a coating film including at least one charge transporting agent to an atmospheric pressure plasma treatment, wherein electron transfer between the charge transport film and a substance that contacts with the charge transport film is promoted, and deterioration in performance due to diffusion and mixing or crystallization of low molecular weight components, such as a charge transporting agent, incorporated in a cured film is suppressed also in the case of film formation by a wet method, and which exhibits excellent charge transportability and stability over time; a production method with good productivity; and a light-emitting element and photoelectric conversion element equipped with the charge transport film, the atmospheric pressure plasma treatment being preferably a treatment that applies plasma, which is generated using a plasma generating apparatus and conveyed using an inert gas, to the coating film.
摘要翻译：本发明提供一种电荷输送膜，其通过使包含至少一种电荷输送剂的涂膜经受大气压等离子体处理而制备，其中电荷输送膜与与电荷输送膜接触的物质之间的电子转移被促进并且在通过湿法成膜的情况下也抑制了掺入固化膜中的诸如电荷输送剂的低分子量组分的扩散和混合或结晶的性能劣化，并且显示出优异的电荷传输性和稳定性; 生产效率高的生产方法; 以及配备有电荷输送膜的发光元件和光电转换元件，大气压等离子体处理优选是将使用等离子体发生装置产生并使用惰性气体输送的等离子体施加到涂膜的处理。

85. 发明授权

US08482008B2 Method of manufacturing thin film transistor, thin film transistor, and display unit 失效
标题翻译：制造薄膜晶体管，薄膜晶体管和显示单元的方法
公开(公告)号：US08482008B2
公开(公告)日：2013-07-09
申请号：US13444003
申请日：2012-04-11
申请人： Toshiaki Arai , Yoshio Inagaki
发明人： Toshiaki Arai , Yoshio Inagaki
IPC分类号： H01L29/04 , H01L31/20
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02667 , H01L21/02675 , H01L21/2026 , H01L27/12 , H01L27/1281 , H01L29/78678
摘要： A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.
摘要翻译：一种具有晶体硅膜的薄膜晶体管，其在绝缘基板上形成有栅电极和栅极绝缘膜，并且在对应于栅电极的区域中具有沟道区域; 绝缘通道保护膜，其选择性地形成在与晶体硅膜上的沟道区对应的区域中; 具有源极区域和漏极区域的n +硅膜，其夹着与沟道保护膜上的沟道区域对应的区域和晶体硅膜; 以及具有分别对应于源极区域和漏极区域的源极电极和漏极电极的金属膜。

86. 发明申请

US20100239962A1 TWO-PHOTON ABSORBING OPTICAL RECORDING MATERIAL AND TWO-PHOTON ABSORBING OPTICAL RECORDING AND REPRODUCING METHOD 审中-公开
标题翻译：双光子吸收光学记录材料和双光子吸收光学记录和再现方法
公开(公告)号：US20100239962A1
公开(公告)日：2010-09-23
申请号：US12791582
申请日：2010-06-01
申请人： Masaharu AKIBA , Takeharu Tani , Hiroo Takizawa , Yoshio Inagaki
发明人： Masaharu AKIBA , Takeharu Tani , Hiroo Takizawa , Yoshio Inagaki
IPC分类号： G03H1/00
CPC分类号： G11B7/246 , B82Y10/00 , G11B7/245 , G11B7/2463 , G11B7/2472 , G11B7/2475 , G11B7/2478 , G11B7/248 , G11B7/2492 , G11B7/2495 , G11B7/2531 , G11B7/2533 , G11B7/2534 , G11B7/2535 , G11B2007/24612
摘要： A two-photon absorbing optical recording material comprising at least one two-photon absorbing compound and a recording component is provided. Recording is made on it by utilizing the two-photon absorption of the two-photon absorbing compound in the material, and then the material is irradiated with light to thereby detect the difference in the reflectance between the recorded area and the unrecorded area thereof, and the recorded information is thereby reproduced from the material, and also provided are a photosensitive polymer composition and a photon-mode recording method for the material.
摘要翻译：提供了包含至少一个双光子吸收化合物和记录组分的双光子吸收光学记录材料。通过利用材料中的双光子吸收化合物的双光子吸收进行记录，然后用光照射材料，从而检测记录区域与未记录区域之间的反射率差异，所记录的信息因此从材料中再现，并且还提供了用于该材料的光敏聚合物组合物和光子模式记录方法。

87. 发明申请

US20100197050A1 METHOD OF FORMING SEMICONDUCTOR THIN FILM AND INSPECTION DEVICE OF SEMICONDUCTOR THIN FILM 审中-公开
标题翻译：形成半导体薄膜的方法和半导体薄膜检测装置
公开(公告)号：US20100197050A1
公开(公告)日：2010-08-05
申请号：US12695347
申请日：2010-01-28
申请人： Nobuhiko Umezu , Yoshio Inagaki
发明人： Nobuhiko Umezu , Yoshio Inagaki
IPC分类号： H01L21/66 , H01L21/268 , H01L21/428 , G06F19/00
CPC分类号： G01N21/45 , G01N21/8422 , G01N21/9501 , H01L21/02532 , H01L21/02675 , H01L22/12
摘要： A method of forming a semiconductor thin film includes the steps of: forming an amorphous semiconductor thin film on a substrate; partially forming a crystalline semiconductor thin film for each element region by irradiating laser light to the amorphous semiconductor thin film to selectively perform a heating treatment on the amorphous semiconductor thin film, and crystallizing an amorphous semiconductor thin film corresponding to an irradiation region; and inspecting crystallinity of the crystalline semiconductor thin film. The inspection step includes the steps of obtaining an optical step based on an optical phase difference between a crystallized region and an uncrystallized region by irradiating light to the crystalline semiconductor thin film and the amorphous semiconductor thin film, and evaluating one or both of sorting of the crystalline semiconductor thin film and control of crystallinity of the crystalline semiconductor thin film, based on the obtained optical step.
摘要翻译：一种形成半导体薄膜的方法包括以下步骤：在衬底上形成非晶半导体薄膜; 通过向非晶半导体薄膜照射激光来选择性地对非晶半导体薄膜进行加热处理，并使与照射区域相对应的非晶半导体薄膜结晶，从而对每个元件区域部分地形成晶体半导体薄膜; 并检查结晶半导体薄膜的结晶度。检查步骤包括以下步骤：通过将光照射到结晶半导体薄膜和非晶半导体薄膜上，基于结晶区域和未结晶区域之间的光学相位差获得光学步骤，并评估其中的一个或两个基于获得的光学步骤，结晶半导体薄膜和结晶半导体薄膜的结晶度的控制。

88. 发明授权

US07700251B2 Electrophotographic photoconductor and image-forming apparatus 有权
标题翻译：电子照相光电导体和图像形成装置
公开(公告)号：US07700251B2
公开(公告)日：2010-04-20
申请号：US11582588
申请日：2006-10-18
申请人： Norio Nakai , Kazunari Hamasaki , Daisuke Kuboshima , Yoshio Inagaki , Hideki Okada , Tetsuya Ichiguchi , Keiji Maruo
发明人： Norio Nakai , Kazunari Hamasaki , Daisuke Kuboshima , Yoshio Inagaki , Hideki Okada , Tetsuya Ichiguchi , Keiji Maruo
IPC分类号： G03G5/06
CPC分类号： G03G5/047 , G03G5/0517 , G03G5/0605 , G03G5/0609 , G03G5/0612 , G03G5/0618 , G03G5/062
摘要： An electrophotographic photoconductor having an excellent crack resistance and wear resistance as well as excellent sensitivity characteristics, while keeping good image characteristics of the photoconductor is provided. In addition, an image-forming apparatus equipped with such an electrophotographic photoconductor is also provided. The electrophotographic photoconductor includes a photosensitive layer containing at least a charge-generating agent, a hole-transfer agent, and a binder resin on a conductive substrate. The hole-transfer agent has a solubility of 5 to 35% by weight with respect to triglyceride oleate and the photosensitive layer contains a compound represented by the following general formula (1) as an additive:
摘要翻译：提供具有优异的耐龟裂性和耐磨性以及优异的灵敏度特性的电子照相感光体，同时保持感光体的良好图像特性。此外，还提供了配备有这种电子照相感光体的图像形成装置。电子照相感光体包括在导电性基材上至少含有电荷发生剂，空穴转移剂和粘合剂树脂的感光层。空穴转移剂相对于甘油三酯油酸盐的溶解度为5〜35重量％，感光层含有下述通式（1）表示的化合物作为添加剂：

89. 发明申请

US20100038646A1 METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT 失效
标题翻译：制造薄膜晶体管，薄膜晶体管和显示单元的方法
公开(公告)号：US20100038646A1
公开(公告)日：2010-02-18
申请号：US12603049
申请日：2009-10-21
申请人： Toshiaki Arai , Yoshio Inagaki
发明人： Toshiaki Arai , Yoshio Inagaki
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02667 , H01L21/02675 , H01L21/2026 , H01L27/12 , H01L27/1281 , H01L29/78678
摘要： A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.
摘要翻译：一种具有晶体硅膜的薄膜晶体管，其在绝缘基板上形成有栅电极和栅极绝缘膜，并且在对应于栅电极的区域中具有沟道区域; 绝缘通道保护膜，其选择性地形成在与晶体硅膜上的沟道区对应的区域中; 具有源极区域和漏极区域的n +硅膜，其夹着与沟道保护膜上的沟道区域对应的区域和晶体硅膜; 以及具有分别对应于源极区域和漏极区域的源极电极和漏极电极的金属膜。

90. 发明授权

US07629208B2 Method of manufacturing thin film transistor, thin film transistor, and display unit 失效
标题翻译：制造薄膜晶体管，薄膜晶体管和显示单元的方法
公开(公告)号：US07629208B2
公开(公告)日：2009-12-08
申请号：US11744299
申请日：2007-05-04
申请人： Toshiaki Arai , Yoshio Inagaki
发明人： Toshiaki Arai , Yoshio Inagaki
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02667 , H01L21/02675 , H01L21/2026 , H01L27/12 , H01L27/1281 , H01L29/78678
摘要： A method of manufacturing a thin film transistor capable of inhibiting the characteristics variation of the thin film transistor without deteriorating the characteristics thereof is provided. A crystalline silicon film is formed by indirect heat treatment through a photothermal conversion layer and a buffer layer. By patterning the buffer layer and an insulating film, a channel protective film is selectively formed in a region corresponding to a channel region on the crystalline silicon film. Further, when an n+ silicon film and a metal layer are selectively removed, the channel protective film functions as an etching stopper. When the crystalline silicon film is formed, heat is uniformly supplied. Further, in etching, the channel region of the crystalline silicon film is protected.
摘要翻译：提供一种能够抑制薄膜晶体管的特性变化而不劣化其特性的薄膜晶体管的制造方法。通过光热转换层和缓冲层的间接热处理形成晶体硅膜。通过图案化缓冲层和绝缘膜，在对应于晶体硅膜上的沟道区域的区域中选择性地形成沟道保护膜。此外，当选择性地去除n +硅膜和金属层时，沟道保护膜用作蚀刻停止层。当形成结晶硅膜时，均匀地供应热量。此外，在蚀刻中，晶体硅膜的沟道区被保护。

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