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81. 发明授权

US5371411A Resin molded type semiconductor device having a conductor film 失效
标题翻译：具有导体膜的树脂模制型半导体器件
公开(公告)号：US5371411A
公开(公告)日：1994-12-06
申请号：US072405
申请日：1993-06-07
申请人： Yuji Hara , Satoru Ito , Tatsuro Toya
发明人： Yuji Hara , Satoru Ito , Tatsuro Toya
IPC分类号： H01L23/29 , H01L23/31 , H01L23/58 , H01L27/02 , H01L23/48 , H01L29/34 , H01L29/44
CPC分类号： H01L23/3171 , H01L23/291 , H01L23/585 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L24/45 , H01L24/48 , H01L2924/01014 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/181
摘要： A resin molded type semiconductor device has a metallic guard ring that is formed to cover the peripheral edge of the surface of a tetragonal semiconductor substrate. In order to prevent a passivation film on the guard ring from being cracked by stresses due to a resin mold package concentrating in the four corners of the semiconductor substrate, slits or rows of small holes are formed in the corner portions of the guard ring.
摘要翻译：树脂模制型半导体器件具有形成为覆盖四边形半导体衬底的表面的周缘的金属保护环。为了防止保护环上的钝化膜由于聚集在半导体衬底的四个角中的树脂模具封装而受到应力的破坏，在保护环的角部形成有狭缝或一排小孔。

82. 发明授权

US5344518A Pyroelectric IR-sensor 失效
标题翻译：热电红外传感器
公开(公告)号：US5344518A
公开(公告)日：1994-09-06
申请号：US21371
申请日：1993-02-23
申请人： Satoru Ito , Michihiro Murata , Norio Fukui , Keizou Yamamoto , Tetsujiro Sawao , Satoshi Awata , Yasuo Tada , Satoru Kawabata
发明人： Satoru Ito , Michihiro Murata , Norio Fukui , Keizou Yamamoto , Tetsujiro Sawao , Satoshi Awata , Yasuo Tada , Satoru Kawabata
IPC分类号： G01J5/34 , H01L37/02 , B29C45/16
CPC分类号： G01J5/34 , H01L37/02 , B29L2031/3493
摘要： A pyroelectric IR-sensor in which a pyroelectric light receiving element is mounted on a MID substrate or a ceramic substrate having a thermal conductivity less than 0.02 cal/cm.sec..degree.C. Both ends of the pyroelectric light receiving element are supported by the substrate, with the central portion of the pyroelectric light receiving element being spaced from the substrate. Chip parts are mounted on the substrate.
摘要翻译：热电式IR传感器，其热电接收元件安装在MID基板或导热率小于0.02cal / cm·sec的陶瓷基板上。热电接收元件的两端由基板支撑，热电接收元件的中心部分与基板间隔开。芯片部件安装在基板上。

83. 发明授权

US5330796A Method of forming coating films 失效
标题翻译：涂膜形成方法
公开(公告)号：US5330796A
公开(公告)日：1994-07-19
申请号：US878461
申请日：1992-05-05
申请人： Akira Kasari , Satoru Ito , Shigeru Nakamura
发明人： Akira Kasari , Satoru Ito , Shigeru Nakamura
IPC分类号： B05D5/06 , B05D7/00 , C08L61/20 , C08L83/04 , C09D133/06 , C09D143/04 , C09D167/00 , B05D1/36
CPC分类号： B05D7/532 , B05D5/068 , C09D133/06 , C09D143/04 , C09D167/00 , B05D2451/00 , B05D2601/02 , C08L61/20 , C08L83/04
摘要： The invention provides a method of forming a coating film by forming in sequence a pigmented base coat and a clear top coat on a substrate followed by finishing by the two-coat one-bake technique, the method being characterized by using, as a coating composition for pigmented base coat formation, a composition comprising, as essential components thereof,(1) an OH-containing resin,(2) an amino resin,(3) a polyorganosiloxane(4) a flaky metal powder and/or a mica powder, and( 5 ) an organic solvent,and using, as a coating composition for clear top coat formation, a composition comprising, as essential components thereof,(1) an OH-containing base resin which further contains at least one group selected from the class consisting of a silanol group and a hydrolyzable group bound directly to a silicon atom,( 2 ) an amino resin, and( 3 ) an organic solvent.
摘要翻译：本发明提供了一种形成涂膜的方法，该方法通过在基材上依次形成着色底涂层和透明面漆，然后通过双涂层单烘烤技术进行精加工，该方法的特征在于使用作为涂料组合物用于着色底涂层形成的组合物，包含作为其主要成分的组合物，（1）含OH树脂，（2）氨基树脂，（3）聚有机硅氧烷（4）片状金属粉末和/或云母粉末，和（5）有机溶剂，并且使用作为透明外涂层形成用涂料组合物的组合物，其包含作为其主要成分的组合物，（1）含OH基团树脂，其还含有选自以下的至少一种基团：由硅烷醇基和直接与硅原子结合的可水解基团，（2）氨基树脂和（3）有机溶剂组成。

84. 发明授权

US4923945A Resin composition curable at low temperature 失效
标题翻译：树脂组合物在低温下可固化
公开(公告)号：US4923945A
公开(公告)日：1990-05-08
申请号：US268406
申请日：1988-11-08
申请人： Osamu Isozaki , Noboru Nakai , Satoru Ito , Seiji Takami
发明人： Osamu Isozaki , Noboru Nakai , Satoru Ito , Seiji Takami
IPC分类号： C08F283/12 , C08K5/00 , C08K5/1515 , C08K5/205 , C08L33/06 , C08L43/04 , C08L83/07
CPC分类号： C08K5/205 , C08F283/124 , C08K5/0091 , C08K5/1515 , C08L33/06 , C08L43/04
摘要： Disclosed is a resin composition curable at a low temperature and characterized in that the composition comprises:(a) at least one of a copolymer comprising as its monomer components an oxirane-containing vinyl monomer and an alkoxysilane-containing vinyl monomer and a vinyl copolymer comprising at its monomer components a polysiloxane macromonomer and an oxirane-containing vinyl monomer,(b) a chelate compound, and(c) a compound having a number average molecular weight of up to about 1,000 and containing at least two alicyclic oxirane groups in the molecule.
摘要翻译：公开了一种在低温下可固化的树脂组合物，其特征在于该组合物包含：（a）包含含环氧乙烷的乙烯基单体和含烷氧基硅烷的乙烯基单体作为其单体成分的共聚物和乙烯基共聚物中的至少一种，其单体组分为聚硅氧烷大分子单体和含环氧乙烷的乙烯基单体，（b）螯合化合物，和（c）数均分子量高达约1,000并且在分子中含有至少两个脂环族环氧基团的化合物。

85. 发明授权

US4653026A Nonvolatile memory device or a single crystal silicon film 失效
标题翻译：非易失存储器件或单晶硅膜
公开(公告)号：US4653026A
公开(公告)日：1987-03-24
申请号：US403016
申请日：1982-07-29
申请人： Kazuhiro Komori , Satoshi Meguro , Satoru Ito , Toshimasa Kihara , Harumi Wakimoto
发明人： Kazuhiro Komori , Satoshi Meguro , Satoru Ito , Toshimasa Kihara , Harumi Wakimoto
IPC分类号： G11C11/40 , H01L27/088
CPC分类号： H01L27/088
摘要： A nonvolatile memory device comprising a plurality of memory cells composed of insulated gate-type field effect semiconductor elements, terminals for applying a writing voltage and a reading voltage to said plurality of memory cells, wirings for connecting in common insulated gate-type field effect transistor elements of said plurality of memory cells, and resistance elements or MISFET's which are connected between the wirings and the terminals, wherein said resistance elements or MISFET's are composed of a polycrystalline silicon film or a single crystal silicon film formed on the field insulation film.
摘要翻译：一种非易失性存储器件，包括由绝缘栅型场效应半导体元件构成的多个存储单元，用于对所述多个存储单元施加写入电压和读取电压的端子，用于连接公共绝缘栅型场效应晶体管的布线所述多个存储单元的元件，以及连接在布线和端子之间的电阻元件或MISFET，其中所述电阻元件或MISFET由形成在场隔离膜上的多晶硅膜或单晶硅膜构成。

86. 发明授权

US4589394A Injection timing control device in a distributor-type fuel injection pump 失效
标题翻译：分配式燃油喷射泵中的喷油正时控制装置
公开(公告)号：US4589394A
公开(公告)日：1986-05-20
申请号：US738075
申请日：1985-05-24
申请人： Satoru Ito
发明人： Satoru Ito
IPC分类号： F02D1/18 , F02M41/12 , F02M59/20
CPC分类号： F02M41/128
摘要： A distributor-type fuel injection pump for an internal combustion engine, having an injection timing control device for controlling the fuel injection timing by a timer piston displaceable in response to change of the fuel pressure within a suction space of the pump filled with fuel having a pressure variable as a function of the rotational speed of the engine. The pump housing has drain passage means formed in a partition wall thereof partitioning the injection timing control device from the suction space and in the timer piston, and communicating the suction space with a zone under a lower pressure, to always drain fuel within the suction space to the lower pressure zone during the operation of the pump. Therefore, a desired fuel injection timing characteristic substantially free of a hysteresis can be obtained within a predetermined rotational speed region of the engine.
摘要翻译：一种用于内燃机的分配器式燃料喷射泵，具有喷射正时控制装置，用于通过定时器活塞控制燃料喷射正时，所述定时器活塞响应于填充有具有燃料的燃料的泵的吸入空间内的燃料压力的变化而可移位压力变量作为发动机转速的函数。泵壳体具有形成在其分隔壁中的排出通道装置，其将喷射正时控制装置与吸入空间和计时器活塞分隔开，并将吸入空间与较低压力的区域连通，以总是在吸入空间内排出燃料在泵的运行期间到达较低的压力区域。因此，可以在发动机的预定旋转速度区域内获得基本上没有滞后的期望的燃料喷射正时特性。

87. 发明授权

US4509470A Fuel injection pump 失效
标题翻译：燃油喷射泵
公开(公告)号：US4509470A
公开(公告)日：1985-04-09
申请号：US353130
申请日：1982-03-01
申请人： Satoru Ito , Masatoshi Endo
发明人： Satoru Ito , Masatoshi Endo
IPC分类号： F02D1/18 , F02M41/12 , F02M39/00 , F02D31/00
CPC分类号： F02D1/183 , F02M41/126 , F02M41/128
摘要： A fuel injection advance angle control member (28) and a fuel control member (52) are manually and simultaneously controllable to increase the fuel injection angle and the volume of fuel injection, before an engine is started. A knob (112) is located in a position accessible for manipulation. A wire (110) connects the knob (112) to cams (102, 82) which are associated with the fuel injection advance angle control member (28) and the fuel control member (52), respectively. The connection between the knob (112) and the cam (102) includes a spring (210, 300) which is yieldable when the knob (112) is pulled, so that a reaction force counteracting the pulling effort is reduced to promote manipulation with a minimum of effort. Upon an engine start, the resilient force accumulated in the spring (210, 300) is released to move the member (28) to a desired advanced angle position through the cam (102).
摘要翻译：在发动机起动之前，燃料喷射提前角控制构件（28）和燃料控制构件（52）被手动地同时控制以增加燃料喷射角度和燃料喷射量。旋钮（112）位于可操作的位置。导线（110）将旋钮（112）分别连接到与燃料喷射提前角控制构件（28）和燃料控制构件（52）相关联的凸轮（102,82）。旋钮（112）和凸轮（102）之间的连接包括弹簧（210,300），弹簧（210,300）在拉动旋钮（112）时是可屈服的，从而减小了抵抗牵引力的反作用力，以促进操纵最小的努力。在发动机启动时，释放积聚在弹簧（210,300）中的弹性力，以通过凸轮（102）将构件（28）移动到期望的提前角位置。

88. 发明授权

US4365264A Semiconductor device with high density low temperature deposited Si.sub.w N.sub.x H.sub.y O.sub.z passivating layer 失效
标题翻译：具有高密度低温沉积SiWNxHyOz钝化层的半导体器件
公开(公告)号：US4365264A
公开(公告)日：1982-12-21
申请号：US265167
申请日：1981-05-19
申请人： Kiichiro Mukai , Seiki Harada , Shin-ichi Muramatsu , Atsushi Hiraiwa , Shigeru Takahashi , Katsuhisa Usami , Seiichi Iwata , Satoru Ito , Takeo Yoshimi
发明人： Kiichiro Mukai , Seiki Harada , Shin-ichi Muramatsu , Atsushi Hiraiwa , Shigeru Takahashi , Katsuhisa Usami , Seiichi Iwata , Satoru Ito , Takeo Yoshimi
IPC分类号： H01L21/768 , H01L21/312 , H01L21/316 , H01L21/318 , H01L23/29 , H01L23/31 , H01L23/522 , H01L29/34
CPC分类号： H01L21/316 , H01L21/312 , H01L21/3185 , H01L23/291 , H01L24/05 , H01L2924/12044 , H01L2924/181
摘要： A semiconductor device has a passivation layer disposed on a semiconductor body having at least one circuit element therein. This layer is made of a silicon nitride material containing 0.8-5.9 weight-% of H, together with 61-70 weight-% of Si, 25-37 weight-% of N and up to 0.6 weight-% of O and has a density of 2.9-3.05 gr/cm.sup.3.
摘要翻译：半导体器件具有设置在其中具有至少一个电路元件的半导体本体上的钝化层。该层由含有0.8-5.9重量％的H，以及61-70重量％的Si，25-37重量％的N和至多0.6重量％的O的氮化硅材料制成，并且具有密度2.9-3.05gr / cm3。

89. 发明授权

US4239559A Method for fabricating a semiconductor device by controlled diffusion between adjacent layers 失效
标题翻译：通过相邻层之间的受控扩散制造半导体器件的方法
公开(公告)号：US4239559A
公开(公告)日：1980-12-16
申请号：US30812
申请日：1979-04-17
申请人： Satoru Ito
发明人： Satoru Ito
IPC分类号： H01L21/225 , H01L21/321 , H01L21/339 , H01L21/768 , H01L21/8242 , H01L21/31
CPC分类号： H01L27/10844 , H01L21/2257 , H01L21/321 , H01L21/768 , H01L29/66954 , Y10S148/111 , Y10S148/141 , Y10S438/911 , Y10S438/981
摘要： A method for fabricating a semiconductor device is disclosed, which comprises forming a first polycrystalline silicon film containing an impurity such as phosphorus or boron on the surface of a silicon oxide film, forming an impurity-free second polycrystalline silicon film contiguous to the first polycrystalline silicon film, diffusing the impurity contained in the first polycrystalline silicon film into the second polycrystalline silicon film to form an impurity-containing region, and oxidizing the impurity-containing region to electrically separate the first and second polycrystalline silicon films from each other by the resulting oxide.
摘要翻译：公开了一种制造半导体器件的方法，其包括在氧化硅膜的表面上形成含有诸如磷或硼的杂质的第一多晶硅膜，形成与第一多晶硅邻接的无杂质的第二多晶硅膜将包含在第一多晶硅膜中的杂质扩散到第二多晶硅膜中以形成含杂质区域，并且使含杂质区域氧化以将第一和第二多晶硅膜彼此电分离，由此产生的氧化物。

90. 发明授权

US10508324B2 Thermoelectric conversion material and thermoelectric conversion module 有权
公开(公告)号：US10508324B2
公开(公告)日：2019-12-17
申请号：US12864068
申请日：2009-01-22
申请人： Junqing Guo , Shunichi Ochi , Huiyuan Geng , Takahiro Ochi , Satoru Ito
发明人： Junqing Guo , Shunichi Ochi , Huiyuan Geng , Takahiro Ochi , Satoru Ito
IPC分类号： C22C19/07 , H01L35/16 , H01L35/20 , H01L35/04 , C22C1/04
摘要： A thermoelectric conversion material having excellent thermoelectric performance over a wide temperature range, and a thermoelectric conversion module providing excellent junctions between thermoelectric conversion materials and electrodes. An R-T-M-X-N thermoelectric conversion material has a structure expressed by the following formula: RrTt-mMmXx-nNn (0≤r≤1, 3≤t−m≤5, 0≤m≤0.5, 10≤x≤15, 0≤n≤2), where R represents three or more elements selected from the group consisting of rare earth elements, alkali metal elements, alkaline-earth metal elements, group 4 elements, and group 13 elements, T represents at least one element selected from Fe and Co, M represents at least one element selected from the group consisting of Ru, Os, Rh, Ir, Ni, Pd, Pt, Cu, Ag, and Au, X represents at least one element selected from the group consisting of P, As, Sb, and Bi, and N represents at least one element selected from Se and Te.

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