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81. 发明授权

US06194264B1 Semiconductor processing method of making a hemispherical grain (HSG) polysilicon layer 失效
公开(公告)号：US06194264B1
公开(公告)日：2001-02-27
申请号：US08926596
申请日：1997-08-20
申请人： Er-Xang Ping , Randhir P. S. Thakur
发明人： Er-Xang Ping , Randhir P. S. Thakur
IPC分类号： H01L218242
CPC分类号： H01L28/84
摘要： A semiconductor processing method of providing a hemispherical grain polysilicon layer atop a substrate includes, a) providing a substantially amorphous layer of silicon over a substrate at a selected temperature; b) raising the temperature of the substantially amorphous silicon layer to a higher dielectric layer deposition temperature, the temperature raising being effective to transform the amorphous silicon layer into hemispherical grain polysilicon; and c) depositing a dielectric layer over the silicon layer at the higher dielectric deposition temperature. Transformation to hemispherical grain might occur during the temperature rise to the higher dielectric layer deposition temperature, after the higher dielectric layer deposition temperature has been achieved but before dielectric layer deposition, or after the higher dielectric layer deposition temperature has been achieved and during dielectric layer deposition. The temperature raising step can include initially raising the silicon layer temperature to an annealing temperature below the higher dielectric layer deposition temperature, and maintaining the silicon layer at the annealing temperature for a time period effective to increase its degree of surface roughness. Subsequently the silicon layer temperature is raised to the higher dielectric layer deposition temperature, with such further increasing the degree of surface roughness of the resultant silicon layer.

82. 发明授权

US06180481B2 Barrier layer fabrication methods 失效
标题翻译：阻隔层制造方法
公开(公告)号：US06180481B2
公开(公告)日：2001-01-30
申请号：US09004932
申请日：1998-01-09
申请人： Scott J. Deboer , Randhir P. S. Thakur
发明人： Scott J. Deboer , Randhir P. S. Thakur
IPC分类号： H01L218242
CPC分类号： H01L28/75 , H01L21/28568 , H01L27/1085 , H01L28/55 , H01L28/60
摘要： Exemplary embodiments of the present invention teach a process for forming a storage capacitor for a semiconductor assembly, by forming a first storage electrode having a top surface consisting of titanium nitride; forming a barrier layer directly on the titanium nitride, the barrier layer (a material containing any one of amorphous silicon, tantalum, titanium, or strontium) being of sufficient thickness to substantially limit the oxidation of the titanium nitride when said semiconductor assembly is subjected to an oxidizing agent (either an oxidizing agent or an nitridizing agent); converting a portion of the barrier layer to a dielectric compound; depositing a storage cell dielectric directly on the dielectric compound, the storage cell dielectric being of the same chemical makeup as the dielectric compound and thereby using the dielectric compound as a nucleation surface; and forming a second capacitor electrode on the storage cell dielectric.
摘要翻译：本发明的示例性实施例通过形成具有由氮化钛组成的顶表面的第一存储电极来教导形成用于半导体组件的存储电容器的工艺; 在氮化钛上直接形成阻挡层，阻挡层（含有非晶硅，钽，钛或锶中的任何一种的材料）具有足够的厚度，以在所述半导体组件经受时基本上限制氮化钛的氧化氧化剂（氧化剂或氮化剂）; 将阻挡层的一部分转变为电介质化合物; 将存储单元电介质直接沉积在电介质化合物上，储能单元电介质具有与电介质化合物相同的化学组成，从而使用电介质化合物作为成核面; 以及在所述存储单元电介质上形成第二电容器电极。

83. 发明授权

US06171872B2 Method of monitoring a process of manufacturing a semiconductor wafer including hemispherical grain polysilicon 失效
标题翻译：监测制造包括半球形晶粒多晶硅的半导体晶片的工艺的方法
公开(公告)号：US06171872B2
公开(公告)日：2001-01-09
申请号：US09145490
申请日：1998-09-01
申请人： Tyler A. Lowrey , Klaus F. Schuegraf , Randhir P. S. Thakur
发明人： Tyler A. Lowrey , Klaus F. Schuegraf , Randhir P. S. Thakur
IPC分类号： H01L2100
CPC分类号： H01L22/20 , H01L22/12
摘要： A method of monitoring a process of manufacturing a semiconductor wafer including an area of hemispherical grain polysilicon, the method comprising providing a probe including a liquid conductor; and performing a capacitance-voltage measurement with the probe, using a quasi-static measurement method, to determine capacitance-voltage characteristics at the area of hemispherical grain polysilicon.
摘要翻译：一种监视半导体晶片制造工艺的方法，所述半导体晶片包括半球形晶粒多晶硅的区域，所述方法包括提供包括液体导体的探针; 并使用准静态测量方法用探头进行电容电压测量，以确定半球形晶粒多晶硅区域的电容 - 电压特性。

84. 发明授权

US06162666A Method to form a DRAM capacitor using low temperature reoxidation 失效
标题翻译：使用低温再氧化形成DRAM电容器的方法
公开(公告)号：US06162666A
公开(公告)日：2000-12-19
申请号：US368481
申请日：1999-08-04
申请人： Randhir P. S. Thakur , Brett Rolfson
发明人： Randhir P. S. Thakur , Brett Rolfson
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/00 , H01L21/20 , H01L21/31 , H01L21/469 , H01L21/8242
CPC分类号： H01L21/31604 , H01L21/31691 , H01L21/3185 , H01L28/82
摘要： An embodiment of the present invention teaches a capacitor dielectric in a wafer cluster tool for semiconductor device fabrication formed by a method by the steps of: forming nitride adjacent a layer by rapid thermal nitridation; and subjecting the nitride to an ozone ambient, wherein the ozone ambient is selected from the group consisting of an ambient containing an the presence of ultraviolet light and ozone gas, an ambient containing an ozone gas or an ambient containing an NF.sub.3 /ozone gas mixture.
摘要翻译：本发明的实施例教导了用于半导体器件制造的晶片簇工具中的电容器电介质，该方法通过以下步骤形成：通过快速热氮化形成邻近层的氮化物; 以及使所述氮化物经受臭氧环境，其中所述臭氧环境选自包含存在紫外线和臭氧气体的环境，含有臭氧气体的环境或含有NF 3 /臭氧气体混合物的环境。

85. 发明授权

US6150208A DRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric films 失效
标题翻译：由硅锗制成的DRAM电容器和电极限制导电介电膜
公开(公告)号：US6150208A
公开(公告)日：2000-11-21
申请号：US76333
申请日：1998-05-11
申请人： Scott J. Deboer , Klaus F. Schuegraf , Ronald A. Weimer , Randhir P. S. Thakur
发明人： Scott J. Deboer , Klaus F. Schuegraf , Ronald A. Weimer , Randhir P. S. Thakur
IPC分类号： H01L21/02 , H01L21/8242
CPC分类号： H01L28/40 , H01L27/10852
摘要： An exemplary implementation of the present invention includes a capacitor for a dynamic random access memory cell having a first plate; a second plate; and a dielectric layer interposed between said first and second plates, with the dielectric layer being dominated by electrode-limited conduction, which includes tantalum pentoxide and silicon nitride, or a combination of the two. In a preferred implementation, one of the two capacitor plates is formed from a silicon-germanium layer, the second plate is formed from a metal and the dielectric layer is formed from tantalum pentoxide.
摘要翻译：本发明的示例性实施例包括一种用于具有第一板的动态随机存取存储单元的电容器; 第二盘以及插入在所述第一和第二板之间的电介质层，其中所述电介质层由电极限制导电支配，其包括五氧化二钽和氮化硅，或两者的组合。在优选的实施方式中，两个电容器板之一由硅 - 锗层形成，第二板由金属形成，并且介电层由五氧化二钽形成。

86. 发明授权

US06146967A Selective deposition of amorphous silicon film seeded in a chlorine gas and a hydride gas ambient when forming a stacked capacitor with HSG 失效
标题翻译：在用HSG形成堆叠电容器时，选择性地沉积在氯气和氢化物气氛中的非晶硅膜
公开(公告)号：US06146967A
公开(公告)日：2000-11-14
申请号：US914975
申请日：1997-08-20
申请人： Randhir P. S. Thakur , James Pan
发明人： Randhir P. S. Thakur , James Pan
IPC分类号： H01L21/02 , H01L21/20
CPC分类号： H01L28/84 , C23C16/045 , C23C16/24 , C23C16/56 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/0262 , H01L21/02664 , H01L27/10852 , H01L28/91 , H01L28/90 , Y10S438/964
摘要： A polysilicon film is formed with enhanced selectivity by flowing chlorine during the formation of the film. The chlorine acts as an etchant to insulative areas adjacent polysilicon structures on which the film is desired to be formed. Bottom electrodes for capacitors are formed using this process, followed by an anneal to create hemishperical grain (HSG) polysilicon. Multilayer capacitor containers are formed in a non-oxidizing ambient so that no oxide is formed between the layers. The structure formed is planarized to form separate containers made from doped and undoped amorphous silicon layers. Selected ones of undoped layers are seeded in a chlorine containing environment and annealed to form HSG. A dielectric layer and second electrode are formed to complete the cell capacitor.
摘要翻译：通过在膜的形成期间流动氯，形成具有增强的选择性的多晶硅膜。氯作为蚀刻剂，其邻近多晶硅结构的绝缘区域需要形成薄膜。使用该方法形成用于电容器的底部电极，随后进行退火以产生半透明晶粒（HSG）多晶硅。多层电容器容器形成在非氧化环境中，使得在层之间不形成氧化物。所形成的结构被平坦化以形成由掺杂和未掺杂的非晶硅层制成的分离的容器。将选定的未掺杂层接种在含氯环境中并退火以形成HSG。形成电介质层和第二电极以完成电池电容器。

87. 发明授权

US6111285A Boride electrodes and barriers for cell dielectrics 失效
公开(公告)号：US6111285A
公开(公告)日：2000-08-29
申请号：US42791
申请日：1998-03-17
申请人： Husam N. Al-Shareef , Scott J. DeBoer , Dan Gealy , Randhir P. S. Thakur
发明人： Husam N. Al-Shareef , Scott J. DeBoer , Dan Gealy , Randhir P. S. Thakur
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8242 , H01L27/108 , H01L29/76 , H01L33/00
CPC分类号： H01L27/10852 , H01L28/60 , H01L21/28568 , H01L27/10811 , H01L27/10888
摘要： Titanium boride (TiB.sub.x), zirconium boride (ZrB.sub.x) and hafnium boride (HfB.sub.x) barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The barriers protect cell dielectrics from diffusion and other interaction with surrounding materials during subsequent thermal processing.

88. 发明授权

US6046093A Method of forming capacitors and related integrated circuitry 失效
标题翻译：形成电容器和相关集成电路的方法
公开(公告)号：US6046093A
公开(公告)日：2000-04-04
申请号：US876057
申请日：1997-06-13
申请人： Scott J. DeBoer , Klaus F. Schuegraf , Randhir P. S. Thakur
发明人： Scott J. DeBoer , Klaus F. Schuegraf , Randhir P. S. Thakur
IPC分类号： H01L21/02 , H01L27/108 , H01L21/20
CPC分类号： H01L28/84 , H01L28/91 , H01L27/10811
摘要： Capacitor constructions and methods of forming the same are described. In one implementation, a capacitor container is formed over a substrate and includes an internal surface and an external surface. At least some of the external surface is provided to be rougher than at least some of the internal container surface. A capacitor dielectric layer and an outer capacitor plate layer are formed over at least portions of the internal and the external surfaces of the capacitor container. In another implementation, a layer comprising roughened polysilicon is formed over at least some of the external container surface but not over any of the internal container surface. In a preferred aspect, the roughened external surface or roughened polysilicon comprises hemispherical grain polysilicon.
摘要翻译：描述了电容器结构及其形成方法。在一个实施方案中，电容器容器形成在衬底上并且包括内表面和外表面。至少一些外表面被提供为比内部容器表面中的至少一些更粗糙。在电容器容器的内表面和外表面的至少一部分上形成电容器介电层和外电容器板层。在另一个实施方案中，包含粗糙多晶硅的层形成在至少一些外部容器表面上，但不在任何内部容器表面上。在优选的方面，粗糙化的外表面或粗糙多晶硅包括半球形晶粒多晶硅。

89. 发明授权

US5994240A Method for cleaning semiconductor wafers 失效
标题翻译：清洗半导体晶圆的方法
公开(公告)号：US5994240A
公开(公告)日：1999-11-30
申请号：US915517
申请日：1997-08-13
申请人： Randhir P. S. Thakur
发明人： Randhir P. S. Thakur
IPC分类号： C23C16/44 , H01L21/31
CPC分类号： C23C16/4405 , Y10S438/905 , Y10S438/906
摘要： A low temperature in-situ precleaning process for a semiconductor surface is disclosed. Ambient reactant gases, such as NF.sub.3 and GeH.sub.4, having a partial pressure of between approximately 10.sup.-8 and 700 Torr, are pulsed in a batch furnace at temperatures in the approximate range of 250 to 950 degrees Celsius and pressure in the approximate range of 4.times.10.sup.3 to 20.times.10.sup.3 Torr. This forms material on the surface that easily vaporizes in that temperature and pressure range, providing a clean surface for formation of the next layer. A similar in-situ cleaning process is performed at temperature ranges of between approximately 300 to 1,000 degrees Celsius for the equipment utilized in processing semiconductor substrates.
摘要翻译：公开了半导体表面的低温原位预清洗方法。具有介于约10-8和700托之间的分压的环境反应物气体，例如NF 3和GeH 4在分压炉中在大约250至950摄氏度的温度下脉冲，压力约为4×10 3 至20x103乇。这在表面上形成在该温度和压力范围内容易蒸发的材料，提供用于形成下一层的干净的表面。对于处理半导体衬底中使用的设备，在大约300至1000摄氏度之间的温度范围内进行类似的原位清洁过程。

90. 发明授权

US5989338A Method for depositing cell nitride with improved step coverage using MOCVD in a wafer deposition system 失效
标题翻译：在晶片沉积系统中使用MOCVD沉积具有改进的台阶覆盖的单元氮化物的方法
公开(公告)号：US5989338A
公开(公告)日：1999-11-23
申请号：US561735
申请日：1995-11-22
申请人： Scott J. DeBoer , Randhir P. S. Thakur
发明人： Scott J. DeBoer , Randhir P. S. Thakur
IPC分类号： C30B25/02 , H01L21/02 , H01L21/314 , H01L21/318 , C30B25/04
CPC分类号： H01L28/40 , C30B25/02 , C30B29/38 , H01L21/3185
摘要： An embodiment of the present invention teaches a method for forming a storage capacitor during semiconductor memory device fabrication, the method comprising the steps of: forming a first capacitor plate structure comprising a polysilicon material having an aspect ratio comprising a vertical component and a horizontal component; wherein the vertical component of the first capacitor plate structure is greater in dimension than the horizontal component of the first capacitor plate structure; depositing a silicon nitride layer over the first capacitor plate structure by exposing the first capacitor plate structure to a gas vapor phase of an organometallic precursor and to an nitrogen based gas in an Metal Organic Chemical Vapor Deposition (MOCVD) chamber; and forming a second capacitor plate structure over the silicon nitride layer, the second capacitor plate structure being positioned to span at least a portion of the first capacitor plate structure.
摘要翻译：本发明的实施例教导了一种在半导体存储器件制造期间形成存储电容器的方法，该方法包括以下步骤：形成第一电容器板结构，其包括具有垂直分量和水平分量的纵横比的多晶硅材料; 其中所述第一电容器板结构的垂直分量的尺寸大于所述第一电容器板结构的水平分量; 通过在金属有机化学气相沉积（MOCVD）室中将第一电容器板结构暴露于有机金属前体的气相和氮基气体，在第一电容器板结构上沉积氮化硅层; 以及在所述氮化硅层上形成第二电容器板结构，所述第二电容器板结构被定位成跨越所述第一电容器板结构的至少一部分。

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