专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明授权

US07086347B2 Apparatus and methods for minimizing arcing in a plasma processing chamber 有权
公开(公告)号：US07086347B2
公开(公告)日：2006-08-08
申请号：US10140618
申请日：2002-05-06
申请人： Arthur M. Howald , Andras Kuthi , Andrew D. Bailey, III , Butch Berney
发明人： Arthur M. Howald , Andras Kuthi , Andrew D. Bailey, III , Butch Berney
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01J37/32477 , H01J37/32623
摘要： A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.

82. 发明授权

US07078344B2 Stress free etch processing in combination with a dynamic liquid meniscus 有权
标题翻译：与动态液体弯液面相结合的无应力蚀刻处理
公开(公告)号：US07078344B2
公开(公告)日：2006-07-18
申请号：US10769498
申请日：2004-01-30
申请人： Andrew D. Bailey, III , Michael Ravkin , Mikhail Korolik , Puneet Yadav
发明人： Andrew D. Bailey, III , Michael Ravkin , Mikhail Korolik , Puneet Yadav
IPC分类号： H01L21/302
CPC分类号： H01L21/7684 , H01J37/32522 , H01J2237/022 , H01L21/32115 , H01L21/32136 , H01L21/67034 , H01L21/67051 , H01L21/6708 , H01L21/67253
摘要： A system and method for planarizing and controlling non-uniformity on a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple features in the pattern. The conductive interconnect material having an overburden portion. A bulk of the overburden portion is removed and a remaining portion of the overburden portion has a non-uniformity. The non-uniformity is mapped, optimal solution determined and a dynamic liquid meniscus etch process recipe is developed to correct the non-uniformity. A dynamic liquid meniscus etch process, using the dynamic liquid meniscus etch process recipe, is applied to correct the non-uniformity to substantially planarize the remaining portion of the overburden portion.
摘要翻译：用于平坦化和控制图案化半导体衬底上的不均匀性的系统和方法包括接收图案化的半导体衬底。图案化的半导体衬底具有填充图案中的多个特征的导电互连材料。导电互连材料具有覆盖层部分。去除大部分上覆层部分，并且覆盖层部分的剩余部分具有不均匀性。绘制不均匀性，确定最佳溶液，并开发动态液体弯月面蚀刻工艺配方以校正不均匀性。使用动态液体弯月面蚀刻工艺配方的动态液体弯月面蚀刻工艺来校正不均匀性，以使覆盖层部分的剩余部分基本平坦化。

83. 发明授权

US09721782B2 Method and apparatus for shaping a gas profile near bevel edge 有权
公开(公告)号：US09721782B2
公开(公告)日：2017-08-01
申请号：US13157122
申请日：2011-06-09
申请人： Jack Chen , Andrew D. Bailey, III , Iqbal Shareef
发明人： Jack Chen , Andrew D. Bailey, III , Iqbal Shareef
IPC分类号： B05C11/00 , H01L21/306 , H01L21/3065 , H01L21/02 , H01L21/3213 , H01L21/311 , H01L21/67 , C23C16/455
CPC分类号： H01L21/02087 , C23C16/455 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67051 , H01L21/67069 , H01L21/6708
摘要： A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.

84. 发明授权

US08574397B2 Bevel edge plasma chamber with top and bottom edge electrodes 有权
标题翻译：斜边等离子体室具有顶部和底部的边缘电极
公开(公告)号：US08574397B2
公开(公告)日：2013-11-05
申请号：US13547700
申请日：2012-07-12
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01L21/67069
摘要： A plasma processing chamber configured for cleaning a bevel edge of a substrate is provided. The chamber includes a top edge electrode surrounding an insulating plate, and the insulator plate opposes a bottom electrode. The top edge electrode is electrically grounded and separated from the insulator plate by a top dielectric ring. The chamber also includes a bottom edge electrode that is electrically grounded and surrounds the bottom electrode and is separated from the bottom electrode by a bottom dielectric ring. The bottom edge electrode is oriented to oppose the top edge electrode, and the bottom edge electrode has an L shape that is up-facing. Bevel edge plasma processing of a substrate edge is configured to be processed in a chamber having the top and bottom edge electrodes.
摘要翻译：提供了一种用于清洁基板的斜边缘的等离子体处理室。该室包括围绕绝缘板的顶边电极，绝缘体板与底部电极相对。顶边电极通过顶部介质环电接地并与绝缘体板分离。该腔室还包括底部电极，其电接地并且围绕底部电极并且通过底部介电环与底部电极分离。底边电极被定向为与顶边缘电极相对，并且底边电极具有面向上的L形。衬底边缘的斜边等离子体处理被配置为在具有顶部和底部边缘电极的腔室中进行处理。

85. 发明申请

US20120305189A1 Method and Apparatus for Detecting Plasma Unconfinement 有权
标题翻译：用于检测等离子体无约束的方法和装置
公开(公告)号：US20120305189A1
公开(公告)日：2012-12-06
申请号：US13584646
申请日：2012-08-13
申请人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
发明人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
IPC分类号： C23F1/08
CPC分类号： H01L21/67069 , G01N21/68 , H01L21/67028 , H01L21/67253
摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.
摘要翻译：提供了一种用于在斜边清洁操作期间检测反应室中的等离子体无约束的方法。该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。如果偏离阈值波长强度超过目标偏差，则清除结束。

86. 发明授权

US08298433B2 Methods for removing an edge polymer from a substrate 有权
标题翻译：从基材除去边缘聚合物的方法
公开(公告)号：US08298433B2
公开(公告)日：2012-10-30
申请号：US12648264
申请日：2009-12-28
申请人： Hyungsuk Alexander Yoon , Yunsang Kim , Jason A. Ryder , Andrew D. Bailey, III
发明人： Hyungsuk Alexander Yoon , Yunsang Kim , Jason A. Ryder , Andrew D. Bailey, III
IPC分类号： C23F1/00 , H01L21/3065 , C23C16/505
CPC分类号： H01L21/02087 , H01J37/32541 , H01J37/3255 , H05H1/2406 , H05H2001/2412
摘要： A method for generating plasma for removing an edge polymer from a substrate is provided. The method includes providing a powered electrode assembly, which includes a powered electrode, a dielectric layer, and a wire mesh disposed between the powered electrode and the dielectric layer. The method also includes providing a grounded electrode assembly disposed opposite the powered electrode assembly to form a cavity wherein the plasma is generated. The wire mesh is shielded from the plasma by the dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the edge polymer. The method further includes introducing at least one inert gas and at least one process gas into the cavity. The method yet also includes applying an RF field to the cavity using the powered electrode to generate the plasma from the inert gas and process gas.
摘要翻译：提供了一种用于从衬底除去边缘聚合物的等离子体的方法。该方法包括提供一种动力电极组件，其包括供电电极，电介质层和布置在电源电极和电介质层之间的金属丝网。该方法还包括提供与动力电极组件相对设置的接地电极组件，以形成其中产生等离子体的空腔。当等离子体存在于空腔中时，金属丝网通过电介质层被屏蔽，等离子体在一端具有出口，用于提供等离子体以去除边缘聚合物。该方法还包括将至少一种惰性气体和至少一种工艺气体引入空腔中。该方法还包括使用动力电极将RF场施加到空腔，以从惰性气体和处理气体产生等离子体。

87. 发明申请

US20120074099A1 Methods for Controlling Bevel Edge Etching in a Plasma Chamber 有权
标题翻译：控制等离子体室内斜边蚀刻的方法
公开(公告)号：US20120074099A1
公开(公告)日：2012-03-29
申请号：US13300483
申请日：2011-11-18
申请人： Tong Fang , Yunsang Kim , Andrew D. Bailey, III , Olivier Rigoutat , George Stojakovic
发明人： Tong Fang , Yunsang Kim , Andrew D. Bailey, III , Olivier Rigoutat , George Stojakovic
IPC分类号： C23F1/00
CPC分类号： H01J37/32449 , H01J37/32091 , H01J2237/3341 , H01L21/02087
摘要： Methods for bevel edge etching are provided. One example method is for etching a film on a bevel edge of a substrate in a plasma etching chamber. The method includes providing the substrate on a substrate support in the plasma etching chamber. The plasma etching chamber has a top edge electrode and a bottom edge electrode disposed to surround the substrate support. Then flowing an etching process gas through a plurality of edge gas feeds disposed along a periphery of the gas delivery plate. The periphery of the gas deliver plate is oriented above the substrate support and the bevel edge of the substrate, and the flowing is further directed to a space between the top edge electrode and bottom edge electrode. And, flowing a tuning gas through a center gas feed of the gas delivery plate.
摘要翻译：提供斜边蚀刻方法。一种示例性方法是在等离子体蚀刻室中蚀刻衬底的斜边缘上的膜。该方法包括将基板设置在等离子体蚀刻室中的基板支撑件上。等离子体蚀刻室具有顶部边缘电极和设置成围绕基板支撑件的底部边缘电极。然后使蚀刻处理气体流过沿着气体输送板的周边布置的多个边缘气体进料。气体输送板的周边定位在基板支撑件和基板的斜边缘上方，并且流动进一步被引导到顶部边缘电极和底部边缘电极之间的空间。并且，使调谐气体流过气体输送板的中心气体进料。

88. 发明授权

US07981307B2 Method and apparatus for shaping gas profile near bevel edge 有权
标题翻译：用于在斜边附近形成气体轮廓的方法和装置
公开(公告)号：US07981307B2
公开(公告)日：2011-07-19
申请号：US11866392
申请日：2007-10-02
申请人： Jack Chen , Andrew D. Bailey, III , Iqbal Shareef
发明人： Jack Chen , Andrew D. Bailey, III , Iqbal Shareef
IPC分类号： B44C1/22 , H01L21/00
CPC分类号： H01L21/02087 , C23C16/455 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67051 , H01L21/67069 , H01L21/6708
摘要： A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.
摘要翻译：提供了一种用于在处理室中蚀刻衬底的斜边缘的方法。该方法包括将惰性气体流入位于衬底的中心区域上方的处理室的中心区域，并将惰性气体和处理气体的混合物流过衬底的边缘区域。该方法还包括在边缘区域中打击等离子体，其中惰性气体的流动和混合物的流动维持处理气体的质量分数基本恒定。还提供了一种构造成清洁基板的斜边缘的处理室。

89. 发明授权

US07938931B2 Edge electrodes with variable power 有权
标题翻译：具有可变功率的边缘电极
公开(公告)号：US07938931B2
公开(公告)日：2011-05-10
申请号：US11758576
申请日：2007-06-05
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01L21/67069
摘要： The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a bottom electrode configured to receive the substrate, wherein the bottom electrode is coupled to a radio frequency (RF) power supply. The plasma processing chamber also includes a top edge electrode surrounding an insulating plate opposing the bottom electrode. The top edge electrode is electrically grounded. The plasma processing chamber further includes a bottom edge electrode surrounding the bottom electrode. The bottom edge electrode opposes the top edge electrode. The top edge electrode, the substrate disposed on the bottom electrode, and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The bottom edge electrode and the bottom electrode are electrically coupled to one another through an RF circuit tunable to adjust the amount of RF current going between the substrate disposed on the bottom electrode, the bottom edge electrode and the top edge electrode.
摘要翻译：这些实施例提供用于去除基板斜边缘上和附近的蚀刻副产物，电介质膜和金属膜的结构和机构，以及室内，以避免聚合物副产物和沉积膜的积聚并提高工艺产率。在示例性实施例中，提供了构造成清洁基板的斜边缘的等离子体处理室。等离子体处理室包括被配置为接收衬底的底部电极，其中底部电极耦合到射频（RF）电源。等离子体处理室还包括围绕与底部电极相对的绝缘板的顶部边缘电极。顶边电极电接地。等离子体处理室还包括围绕底部电极的底部边缘电极。底边电极与顶边缘电极相对。上边缘电极，设置在底部电极上的基板和底部边缘电极被配置为产生清洁等离子体以清洁基板的斜边缘。底边电极和底电极通过可调谐的RF电路彼此电耦合，以调节在设置在底部电极，底部边缘电极和顶部边缘电极之间的衬底之间的RF电流的量。

90. 发明授权

US07909960B2 Apparatus and methods to remove films on bevel edge and backside of wafer 有权
标题翻译：在晶圆的斜边缘和背面去除薄膜的装置和方法
公开(公告)号：US07909960B2
公开(公告)日：2011-03-22
申请号：US11440561
申请日：2006-05-24
申请人： Yunsang Kim , Andrew D. Bailey, III
发明人： Yunsang Kim , Andrew D. Bailey, III
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32532 , H01J37/32357 , H01J37/3244 , H01J37/32862
摘要： Improved mechanisms of removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and etch byproducts on substrate backside and chamber interior is provided to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. An exemplary plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode surrounding a substrate support in the plasma processing chamber, wherein the substrate support is configured to receive the substrate and the bottom edge electrode and the substrate support are electrically isolated from each other by a bottom dielectric ring. The chamber also includes a top edge electrode surrounding a gas distribution plate opposing the substrate support, wherein the top edge electrode and the gas distribution plate are electrically isolated from each other by a top dielectric ring, and the top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate.
摘要翻译：提供了去除蚀刻副产物，电介质膜和金属薄膜附近基板斜边缘的改进机理，以及衬底背面和腔室内部的蚀刻副产物，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。提供了一种构造成清洁衬底的斜边缘的示例性等离子体蚀刻处理室。所述腔室包括围绕所述等离子体处理室中的衬底支撑件的底部边缘电极，其中所述衬底支撑件构造成接收所述衬底，并且所述底部边缘电极和所述衬底支撑件通过底部电介质环彼此电隔离。该室还包括围绕与衬底支撑件相对的气体分配板的顶部边缘电极，其中顶部边缘电极和气体分配板通过顶部介电环彼此电隔离，并且顶部边缘电极和底部边缘电极被配置为产生清洁等离子体以清洁基板的斜边缘。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式