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    • 82. 发明授权
    • Inverter control apparatus using a two-phase modulation method
    • 变频调速装置采用两相调制方式
    • US5650708A
    • 1997-07-22
    • US401988
    • 1995-03-10
    • Takeshi SawadaHiroshi FujitaHiroya TsujiKanji TakeuchiTsuneyuki Egami
    • Takeshi SawadaHiroshi FujitaHiroya TsujiKanji TakeuchiTsuneyuki Egami
    • B60L11/18H02M7/5387H02P7/00
    • B60L11/1803H02M7/53875Y02T10/7005
    • An inverter control apparatus for driving a polyphase AC motor for preventing abrupt changes in motor drive currents when switching of one phase is stopped. The apparatus includes a signal generator for generating duty signals of drive signals of respective phases on the basis of a generated reference waveform and a signal modifier for selecting one of the duty signals of one phase, holding it at a predetermined level, and modifying the duty signals of other phases according to the value required to hold the selected duty signal. On the basis of three-phase signal voltage levels, a decision is made on voltage fixing phase intervals by a phase decision circuit, and shift values are determined by an adder at every voltage fixing phase interval. Shift values are selected by a multiplexer according to the outputs of the phase decision circuit and added to triangular wave voltage. Resultant sum values are compared with the three-phase signal voltages to form a three-phase PWM signal.
    • 用于驱动多相交流电动机的逆变器控制装置,用于防止一相切换时电动机驱动电流的突然变化。 该装置包括:信号发生器,用于基于产生的参考波形产生各相的驱动信号的占空比信号;以及信号修正器,用于选择一个相位的占空比信号,将其保持在预定电平,并修改占空比 根据保持所选择的占空比信号所需的值的其他相位的信号。 基于三相信号电压电平,通过相位判定电路对电压固定相位间隔进行判定,并且在每个电压固定相间隔时由加法器确定偏移值。 移位值由多路复用器根据相位判定电路的输出选择,并加到三角波电压上。 将结果和值与三相信号电压进行比较,形成三相PWM信号。
    • 83. 发明授权
    • Method for fabricating photomasks having a phase shift layer comprising
the use of a positive to negative resist, substrate imaging and heating
    • 一种具有相移层的光掩模的方法,包括使用正抗蚀剂,底物成像和加热
    • US5380609A
    • 1995-01-10
    • US99153
    • 1993-07-29
    • Hiroshi FujitaMasaaki Kurihara
    • Hiroshi FujitaMasaaki Kurihara
    • H01L21/027G03F1/00G03F9/00
    • G03F7/2022G03F1/26G03F1/30
    • The invention relates to a method for forming a resist pattern for dry etching a phase shifter layer in which a phase shifter pattern portion and a portion for protecting the surface of a light-blocking pattern are formed by a single photolithographic step. A light-blocking patter 40 is formed on a phase shifter layer 33, followed by the formation of a positive to negative image reversible resist thin film 41. A given region of the resist thin film 41 that includes a part of the unpatterned region thereof is exposed to ionizing radiation 42. Post-exposure baking for image reversal is carried out. Subsequently, the whole back side of the substrate is exposed to ultraviolet light 44 using the light-blocking pattern as a mask, thereby enabling only an unexposed region of the unpatterned resist to be soluble in a developer. The resist thin film 41 is developed to form a resist pattern 45.
    • 本发明涉及一种形成用于干蚀刻移相器层的抗蚀剂图案的方法,其中通过单个光刻步骤形成移相器图案部分和用于保护遮光图案的表面的部分。 在移相器层33上形成遮光图案40,然后形成正负像图像可逆抗蚀剂薄膜41.包括其未图案化区域的一部分的抗蚀剂薄膜41的给定区域是 暴露于电离辐射42.进行用于图像反转的曝光后烘烤。 随后,使用遮光图案作为掩模将基板的整个背面暴露于紫外线44,从而仅使未图案化的抗蚀剂的未曝光区域可溶于显影剂。 抗蚀剂薄膜41被显影以形成抗蚀图案45。