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81. 发明授权

US07396730B2 Integrated circuit devices including an L-shaped depletion barrier layer adjacent opposite sides of a gate pattern and methods of forming the same 失效
标题翻译：集成电路器件包括邻近栅极图案的相对侧的L形耗尽阻挡层及其形成方法
公开(公告)号：US07396730B2
公开(公告)日：2008-07-08
申请号：US11000260
申请日：2004-11-30
申请人： Ming Li
发明人： Ming Li
IPC分类号： H01L21/336
CPC分类号： H01L29/66628 , H01L21/26586 , H01L29/0653 , H01L29/1083 , H01L29/41775 , H01L29/66545 , H01L29/66636
摘要： Integrated circuit devices include an integrated circuit substrate having a channel region therein. A gate pattern is disposed on a top surface of the channel region. A depletion barrier layer covers a surface of the integrated circuit substrate adjacent opposite sides of the gate pattern and extending along a portion of a lateral face of the channel region. A source/drain layer is disposed on the depletion barrier layer and electrically contacting the lateral face of the channel region in a region not covered by the depletion barrier layer. The channel region may protrude from a surface of the substrate. The depletion barrier layer may be an L-shaped depletion barrier layer and the device may further include a device isolation layer disposed at a predetermined portion of the substrate through the source/drain layer and the depletion barrier layer. The depletion barrier layer and the device isolation layer may be formed of the same material.
摘要翻译：集成电路器件包括其中具有沟道区的集成电路衬底。栅极图案设置在沟道区域的顶表面上。耗尽屏障层覆盖与栅极图案的相对侧相邻的集成电路基板的表面，并且沿沟道区域的侧面的一部分延伸。源极/漏极层设置在耗尽阻挡层上并与未被耗尽阻挡层覆盖的区域中的沟道区域的侧面电接触。沟道区域可以从衬底的表面突出。耗尽阻挡层可以是L形耗尽势垒层，并且该器件还可以包括通过源/漏层和耗尽阻挡层设置在衬底的预定部分处的器件隔离层。耗尽阻挡层和器件隔离层可以由相同的材料形成。

82. 发明申请

US20080144313A1 LIGHT GUIDES AND LUMINOUS INPUTS HAVING THE SAME 审中-公开
标题翻译：光指导和具有相同功能的LUMINOUS INPUTS
公开(公告)号：US20080144313A1
公开(公告)日：2008-06-19
申请号：US11861315
申请日：2007-09-26
申请人： Kenneth Zhao , Jia-Gui Zhou , Ming Li
发明人： Kenneth Zhao , Jia-Gui Zhou , Ming Li
IPC分类号： F21V8/00 , F21V7/04
CPC分类号： G05G1/105
摘要： A kind of luminous input is disclosed. The luminous input includes an input element, a light guide, and a plurality of LEDs. The light guide defines a hole for receiving the input element, and includes a reflection part and a light transmission part around the hole. The reflection part includes a first reflection surface and a second reflection surface opposite each other. The second reflection surface is tilted at an angle relative to the first reflection surface. Light emitted by the LEDs is sequently reflected by the first and second reflection surface, then passes through the light transmission part. The luminous input is low in height and is efficient in using the light.
摘要翻译：公开了一种发光输入。发光输入包括输入元件，光导和多个LED。光导件限定用于接收输入元件的孔，并且包括反射部分和围绕孔的透光部分。反射部包括彼此相对的第一反射面和第二反射面。第二反射面相对于第一反射面以一定角度倾斜。由LED发射的光由第一和第二反射面依次反射，然后通过透光部。发光输入高度低，使用效率高。

83. 发明授权

US07387801B2 Organic extract of Geum japonicum Thunb variant and use thereof 有权
标题翻译：天竺葵Thunb变体的有机提取物及其用途
公开(公告)号：US07387801B2
公开(公告)日：2008-06-17
申请号：US10538433
申请日：2002-12-10
申请人： Ming Li , Jao Yiu Sung , Ping Chung Leung , Hui Dong , Kai Ming Chan
发明人： Ming Li , Jao Yiu Sung , Ping Chung Leung , Hui Dong , Kai Ming Chan
IPC分类号： A61K36/00
CPC分类号： A61K36/73
摘要： An organic extract of a Chinese herbal medicine Geum Japonicum thunb var. has been identified that displayed potent stimulatory effects on rapid agiogenesis (
摘要翻译：中草药有机提取物已经被鉴定为对创伤骨骼肌的快速发生（<24小时），造血和阻塞性纤维化的显示有显着的刺激作用。该提取物对损伤的骨骼肌中的血管生成和肌发生显示出有力的双重作用，导致兔和大鼠动物模型中的完全骨骼肌愈合。本发明的提取物可以开发成用于治疗骨骼肌创伤，包括烧伤，皮肤伤口和手术切割的软组织愈合以及骨折和缺损愈合的有效治疗药物。

84. 发明授权

US07341907B2 Single wafer thermal CVD processes for hemispherical grained silicon and nano-crystalline grain-sized polysilicon 失效
标题翻译：用于半球形晶粒硅和纳米晶粒尺寸多晶硅的单晶片热CVD工艺
公开(公告)号：US07341907B2
公开(公告)日：2008-03-11
申请号：US11099081
申请日：2005-04-05
申请人： Ming Li , Kevin Cunningham , Sheeba Panayil , Guangcai Xing , R. Suryanarayanan Iyer
发明人： Ming Li , Kevin Cunningham , Sheeba Panayil , Guangcai Xing , R. Suryanarayanan Iyer
IPC分类号： H01L21/8242
CPC分类号： C23C16/24 , C23C16/56 , H01L21/28035 , H01L21/28525 , H01L28/84 , H01L29/4925
摘要： Methods for depositing hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are provided. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are deposited in single substrate chemical vapor deposition chambers. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers may be used as electrode layers in semiconductor devices. In one aspect, a two step deposition process is provided to form a nanocrystalline grain-sized polysilicon layer with a reduced roughness.
摘要翻译：提供了沉积半球形硅层和纳米晶粒尺寸多晶硅层的方法。半球形硅层和纳米晶粒尺寸的多晶硅层沉积在单个基板化学气相沉积室中。半球形晶粒硅层和纳米晶粒尺寸的多晶硅层可用作半导体器件中的电极层。在一个方面，提供两步沉积工艺以形成具有减小的粗糙度的纳米晶粒尺寸的多晶硅层。

85. 发明申请

US20080020537A1 Method of fabricating field effect transistor (FET) having wire channels 有权
公开(公告)号：US20080020537A1
公开(公告)日：2008-01-24
申请号：US11902403
申请日：2007-09-21
申请人： Sungmin Kim , Ming Li , Eungjung Yoon
发明人： Sungmin Kim , Ming Li , Eungjung Yoon
IPC分类号： H01L21/336
CPC分类号： H01L29/78696 , H01L29/42392
摘要： In a field effect transistor (FET), and a method of fabricating the same, the FET includes a semiconductor substrate, source and drain regions formed on the semiconductor substrate, a plurality of wire channels electrically connecting the source and drain regions, the plurality of wire channels being arranged in two columns and at least two rows, and a gate dielectric layer surrounding each of the plurality of wire channels and a gate electrode surrounding the gate dielectric layer and each of the plurality of wire channels.

86. 发明申请

US20070287271A1 Deposition of nano-crystal silicon using a single wafer chamber 审中-公开
公开(公告)号：US20070287271A1
公开(公告)日：2007-12-13
申请号：US11893301
申请日：2007-08-13
申请人： Sheeba Panayil , Ming Li , Shulin Wang , Jonathan Pickering
发明人： Sheeba Panayil , Ming Li , Shulin Wang , Jonathan Pickering
IPC分类号： H01L21/20 , B05C5/00
CPC分类号： C23C16/24 , Y10S977/814
摘要： Numerous embodiments of a method for depositing a layer of nano-crystal silicon on a substrate. In one embodiment of the present invention, a substrate is placed in a single wafer chamber and heated to a temperature between about 300° C. to about 490° C. A silicon source is also fed into the single wafer chamber.

87. 发明申请

US20070143279A1 Identifying important news reports from news home pages 失效
标题翻译：从新闻主页识别重要的新闻报道
公开(公告)号：US20070143279A1
公开(公告)日：2007-06-21
申请号：US11303443
申请日：2005-12-15
申请人： Jinyi Yao , Ming Li , Wei-Ying Ma , Zhiwei Li
发明人： Jinyi Yao , Ming Li , Wei-Ying Ma , Zhiwei Li
IPC分类号： G06F17/30
CPC分类号： G06F17/30864 , Y10S707/99931 , Y10S707/99932 , Y10S707/99933 , Y10S707/99936 , Y10S707/99937
摘要： A method and system for determining the importance of news events based on news reports published by news sources on news home pages is provided. A news system identifies news home pages that contain references to news reports on detail pages. The news system calculates the importance of a news event based on the importance of news reports reporting that news event. The news system may determine the importance of a news report based on the assumption that the importance of a news report is based on the credibility of news home pages and the importance of similar news reports. The news system may recursively define the importance of a news report based on the credibility of news home pages and the similarity to other news pages and the importance of a news home page based on the importance of its news reports and similar news reports.
摘要翻译：提供了一种基于新闻源在新闻主页上发布的新闻报道来确定新闻事件重要性的方法和系统。新闻系统识别包含对详细页面上的新闻报道的引用的新闻主页。新闻系统基于报道新闻事件的新闻报道的重要性来计算新闻事件的重要性。新闻系统可以基于以下假设来确定新闻报道的重要性：新闻报道的重要性是基于新闻主页的可信度和类似新闻报道的重要性。新闻系统可以基于新闻主页的可信度和与其他新闻页面的相似性以及基于新闻报道和类似新闻报道的重要性的新闻主页的重要性递归地定义新闻报道的重要性。

88. 发明申请

US20070020924A1 TUNGSTEN NITRIDE ATOMIC LAYER DEPOSITION PROCESSES 有权
标题翻译： TINGSTEN NITRIDE原子层沉积法
公开(公告)号：US20070020924A1
公开(公告)日：2007-01-25
申请号：US11532114
申请日：2006-09-15
申请人： Shulin Wang , Ulrich Kroemer , Lee Luo , Aihua Chen , Ming Li
发明人： Shulin Wang , Ulrich Kroemer , Lee Luo , Aihua Chen , Ming Li
IPC分类号： H01L21/4763
CPC分类号： C23C16/45527 , C23C16/02 , C23C16/34 , C23C16/45525 , H01L21/28061 , H01L21/28562 , H01L21/28568 , H01L21/76841 , H01L27/10861 , H01L28/60 , H01L29/4941 , H01L29/66181
摘要： In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μΩ-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.
摘要翻译：在一个实施例中，提供了一种在衬底上形成钨阻挡材料的方法，其包括在气相沉积工艺期间在衬底上沉积钨层并将衬底依次暴露于钨前体和氮前体以形成氮化钨层在钨层上。一些实施例提供可以在原子层沉积工艺期间通过依次将基底暴露于钨前体和还原气体（例如乙硼烷或硅烷）来沉积钨层。钨层的厚度可以为约或者更小，并且氮化钨层的电阻率可以为约380μΩ·cm以下。其它实例提供了通过化学气相沉积工艺在钨氮化物层上沉积钨体层。

89. 发明申请

US20060223333A1 Single wafer thermal CVD processes for hemispherical grained silicon and nano-crystalline grain-sized polysilicon 失效
标题翻译：用于半球形晶粒硅和纳米晶粒尺寸多晶硅的单晶片热CVD工艺
公开(公告)号：US20060223333A1
公开(公告)日：2006-10-05
申请号：US11099081
申请日：2005-04-05
申请人： Ming Li , Kevin Cunningham , Sheeba Panayil , Guangcai Xing , R. Iyer
发明人： Ming Li , Kevin Cunningham , Sheeba Panayil , Guangcai Xing , R. Iyer
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/24 , C23C16/56 , H01L21/28035 , H01L21/28525 , H01L28/84 , H01L29/4925
摘要： Methods for depositing hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are provided. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are deposited in single substrate chemical vapor deposition chambers. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers may be used as electrode layers in semiconductor devices. In one aspect, a two step deposition process is provided to form a nanocrystalline grain-sized polysilicon layer with a reduced roughness.
摘要翻译：提供了沉积半球形硅层和纳米晶粒尺寸多晶硅层的方法。半球形硅层和纳米晶粒尺寸的多晶硅层沉积在单个基板化学气相沉积室中。半球形晶粒硅层和纳米晶粒尺寸的多晶硅层可用作半导体器件中的电极层。在一个方面，提供两步沉积工艺以形成具有减小的粗糙度的纳米晶粒尺寸的多晶硅层。

90. 发明授权

US07115499B2 Cyclical deposition of tungsten nitride for metal oxide gate electrode 有权
公开(公告)号：US07115499B2
公开(公告)日：2006-10-03
申请号：US11003020
申请日：2004-12-01
申请人： Shulin Wang , Ulrich Kroemer , Lee Luo , Aihua Chen , Ming Li
发明人： Shulin Wang , Ulrich Kroemer , Lee Luo , Aihua Chen , Ming Li
IPC分类号： H01L21/4763
CPC分类号： C23C16/45527 , C23C16/02 , C23C16/34 , C23C16/45525 , H01L21/28061 , H01L21/28562 , H01L21/28568 , H01L21/76841 , H01L27/10861 , H01L28/60 , H01L29/4941 , H01L29/66181
摘要： A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concentration of fluorine, and can be deposited at any desired thickness, such as less than 100 angstroms, to minimize the amount of barrier layer material.

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