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81. 发明授权

US5869219A Method for depositing a polyimide film 失效
标题翻译：淀积聚酰亚胺薄膜的方法
公开(公告)号：US5869219A
公开(公告)日：1999-02-09
申请号：US964899
申请日：1997-11-05
申请人： Chen-Cheng Kuo , Ho-Ku Lan , Hung-Chih Chen , Shih-Shiung Chen
发明人： Chen-Cheng Kuo , Ho-Ku Lan , Hung-Chih Chen , Shih-Shiung Chen
IPC分类号： B05D3/04 , G03F7/075 , G03F7/16 , H01L21/312 , H01L23/31 , H01L23/532 , G03C1/492 , B05D5/12
CPC分类号： H01L23/5329 , B05D3/0486 , G03F7/0751 , G03F7/16 , G03F7/162 , H01L21/312 , H01L23/3171 , H01L2924/0002 , Y10S430/136 , Y10S438/909
摘要： The present invention discloses a method for coating a polyimide precursor on an electronic structure incorporating the use of a silicon coupling agent without any bubble defect in the film deposited. The method can be carried out by flowing at least one inert gas through a deposition chamber and thereby keeping the relative humidity in the chamber at below 25% to carry away the formation of any water molecules and water vapor to prevent the formation of bubbles in the film deposited.
摘要翻译：本发明公开了一种在电子结构上涂覆聚酰亚胺前体的方法，所述电子结构结合使用硅偶联剂，而在所沉积的膜中没有任何气泡缺陷。该方法可以通过使至少一种惰性气体通过沉积室进行，从而将室内的相对湿度保持在25％以下，从而携带任何水分子和水蒸汽的形成，以防止在电影存放。

82. 发明授权

US08604594B2 Structures for preventing cross-talk between through-silicon vias and integrated circuits 有权
标题翻译：用于防止硅通孔和集成电路之间串扰的结构
公开(公告)号：US08604594B2
公开(公告)日：2013-12-10
申请号：US13346995
申请日：2012-01-10
申请人： Chen-Cheng Kuo
发明人： Chen-Cheng Kuo
IPC分类号： H01L23/552
CPC分类号： H01L25/0657 , H01L23/481 , H01L23/552 , H01L23/562 , H01L23/585 , H01L23/66 , H01L2223/6688 , H01L2224/16 , H01L2225/06513 , H01L2225/06541
摘要： A semiconductor chip includes a through-silicon via (TSV), a device region, and a cross-talk prevention ring encircling one of the device region and the TSV. The TSV is isolated from substantially all device regions comprising active devices by the cross-talk prevention ring.
摘要翻译：一种半导体芯片包括环形通孔（TSV），器件区域和环绕该器件区域和TSV之一的串扰防止环。 TSV通过串扰防止环从基本上包括有源设备的所有设备区域隔离。

83. 发明授权

US07888236B2 Semiconductor device and fabrication methods thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US07888236B2
公开(公告)日：2011-02-15
申请号：US11798432
申请日：2007-05-14
申请人： Han-Ping Pu , Bai-Yao Lou , Dean Wang , Ching-Wen Hsiao , Kai-Ming Ching , Chen-Cheng Kuo , Wen-Chih Chiou , Ding-Chung Lu , Shang-Yun Hou
发明人： Han-Ping Pu , Bai-Yao Lou , Dean Wang , Ching-Wen Hsiao , Kai-Ming Ching , Chen-Cheng Kuo , Wen-Chih Chiou , Ding-Chung Lu , Shang-Yun Hou
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , H01L2224/05001 , H01L2224/05022 , H01L2224/05023 , H01L2224/051 , H01L2224/05572 , H01L2224/056 , H01L2224/11 , H01L2924/00014
摘要： A method for packaging a semiconductor device disclosed. A substrate comprising a plurality of dies, separated by scribe line areas respectively is provided, wherein at least one layer is overlying the substrate. A portion of the layer within the scribe lines area is removed by photolithography and etching to form openings. The substrate is sawed along the scribe line areas, passing the openings. In alternative embodiment, a first substrate comprising a plurality of first dies separated by first scribe line areas respectively is provided, wherein at least one first structural layer is overlying the first substrate. The first structural layer is patterned to form first openings within the first scribe line areas. A second substrate comprising a plurality of second dies separated by second scribe line areas respectively is provided, wherein at least one second structural layer is overlying the substrate. The second structural layer is patterned to form second openings within the second scribe line areas. The first substrate and the second substrate are bonded to form a stack structure. The stack structure is cut along the first and second scribe line areas, passing the first and second openings.
摘要翻译：一种封装半导体器件的方法。提供了包括分别由划线区域分隔的多个管芯的衬底，其中至少一层覆盖衬底。通过光刻和蚀刻去除划线部分内的层的一部分以形成开口。沿着划线区域锯切基板，通过开口。在替代实施例中，提供了包括分别由第一划线区域分开的多个第一裸片的第一衬底，其中至少一个第一结构层覆盖在第一衬底上。图案化第一结构层以在第一划线区域内形成第一开口。提供了包括分别由第二划线区域分开的多个第二裸片的第二衬底，其中至少一个第二结构层覆盖在衬底上。图案化第二结构层以在第二划线区域内形成第二开口。第一基板和第二基板被接合以形成堆叠结构。沿着第一和第二划线区域切割堆叠结构，使第一和第二开口通过。

84. 发明授权

US07557423B2 Semiconductor structure with a discontinuous material density for reducing eddy currents 有权
标题翻译：具有不连续材料密度的半导体结构，用于减少涡流
公开(公告)号：US07557423B2
公开(公告)日：2009-07-07
申请号：US11850647
申请日：2007-09-05
申请人： Kai-Ming Ching , Chen Chen-Shien , Han-Hsiang Huang , Chih-Hua Chen , Chen-Cheng Kuo
发明人： Kai-Ming Ching , Chen Chen-Shien , Han-Hsiang Huang , Chih-Hua Chen , Chen-Cheng Kuo
IPC分类号： H01L23/48
CPC分类号： H01L27/08 , H01L23/5227 , H01L28/10 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure includes an inductor; and a semiconductor substrate underlying the inductor, having a discontinuous material density across a plane underneath and in parallel with the inductor, thereby reducing eddy currents induced by an electrical current flowing through the inductor.
摘要翻译：半导体结构包括电感器; 以及位于电感器下方的半导体衬底，其具有在电感器下方并与电感平行的平面上的不连续材料密度，从而减少由流过电感器的电流引起的涡流。

85. 发明申请

US20090134500A1 Structures for Preventing Cross-talk Between Through-Silicon Vias and Integrated Circuits 有权
标题翻译：防止通硅通孔与集成电路之间串扰的结构
公开(公告)号：US20090134500A1
公开(公告)日：2009-05-28
申请号：US11945022
申请日：2007-11-26
申请人： Chen-Cheng Kuo
发明人： Chen-Cheng Kuo
IPC分类号： H01L23/552
CPC分类号： H01L25/0657 , H01L23/481 , H01L23/552 , H01L23/562 , H01L23/585 , H01L23/66 , H01L2223/6688 , H01L2224/16 , H01L2225/06513 , H01L2225/06541
摘要： A semiconductor chip includes a through-silicon via (TSV), a device region, and a cross-talk prevention ring encircling one of the device region and the TSV. The TSV is isolated from substantially all device regions comprising active devices by the cross-talk prevention ring.
摘要翻译：一种半导体芯片包括环形通孔（TSV），器件区域和环绕该器件区域和TSV之一的串扰防止环。 TSV通过串扰防止环从基本上包括有源设备的所有设备区域隔离。

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