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    • 81. 发明授权
    • Low-noise zener diode
    • 低噪声齐纳二极管
    • US5612568A
    • 1997-03-18
    • US560190
    • 1995-11-21
    • Takao Arai
    • Takao Arai
    • H01L29/866H01L29/861
    • H01L29/866
    • A low-noise Zener diode that enables to improve the surge resistance performance without degeneration of its low-noise characteristic is provided. The diode contains a semiconductor substrate of a first conductivity type and a first impurity doped region of a second conductivity type formed in a surface area of the substrate. The first impurity doped region has spaces into which no impurity of the second conductivity type is doped. The diode further contains a second impurity doped region of the second conductivity type formed in the first impurity doped region. The second impurity doped region has a depth less than that of the first impurity doped region. The second impurity doped region is contacted with the substrate in the spaces, producing main p-n junctions of the diode at respective interfaces of the second impurity doped regions and the substrate. The second impurity doped region is contacted with the first impurity doped region other than in the spaces. Heat generation zones of the main p-n junctions are combined with each other to produce a total heat generation zone that is greater than a sum area of the main p-n junctions.
    • 提供了一种低噪声齐纳二极管,可以提高浪涌电阻性能,而不会降低其低噪声特性。 二极管包含形成在衬底的表面区域中的第一导电类型的半导体衬底和第二导电类型的第一杂质掺杂区域。 第一杂质掺杂区域具有不掺杂第二导电类型的杂质的空间。 二极管还包含在第一杂质掺杂区域中形成的第二导电类型的第二杂质掺杂区域。 第二杂质掺杂区域的深度小于第一杂质掺杂区域的深度。 第二杂质掺杂区域与空间中的衬底接触,在第二杂质掺杂区域和衬底的相应界面产生二极管的主p-n结。 第二杂质掺杂区域与除了空间中的第一杂质掺杂区域接触。 主p-n结的热产生区彼此组合以产生大于主p-n结的总面积的总发热区。
    • 82. 发明授权
    • Semiconductor device with parallel-connected diodes
    • 具有并联二极管的半导体器件
    • US5548152A
    • 1996-08-20
    • US260832
    • 1994-06-16
    • Takao Arai
    • Takao Arai
    • H01L27/04H01L21/822H01L27/02H01L27/06H01L29/861H01L29/866H01L23/62H01L29/76H01L31/107
    • H01L27/0251H01L27/0255
    • A semiconductor device for electrostatic-charge protection is provided. The device includes first and second diodes parallel-connected and an MOS transistor connected serially to the second diode, all of which are provided on a semiconductor substrate. The breakdown voltages of the first and second diodes are higher than the threshold voltage of the MOS transistor. When a voltage lower than the threshold voltage is applied across a pair of electrodes of the device, the MOS transistor is open, so that only the first diode is effective, providing small capacitance between the pair of the electrodes. When a voltage equal to or higher than the threshold voltage is applied across the pair of the electrodes, the MOS transistor becomes short, so that both of the first and second diodes becomes effective. Therefore, when a voltage higher than the breakdown voltages is applied, both of the diodes absorb applied electrostatic energy, which means that the withstand voltage between the pair of the electrodes can be higher than those of the conventional ones.
    • 提供了一种用于静电电荷保护的半导体器件。 该器件包括并联的第一和第二二极管和串联连接到第二二极管的MOS晶体管,所有这些都设置在半导体衬底上。 第一和第二二极管的击穿电压高于MOS晶体管的阈值电压。 当低于阈值电压的电压施加在器件的一对电极上时,MOS晶体管断开,使得仅第一二极管有效,在一对电极之间提供小的电容。 当在一对电极之间施加等于或高于阈值电压的电压时,MOS晶体管变短,使得第一和第二二极管都有效。 因此,当施加高于击穿电压的电压时,两个二极管吸收所施加的静电能量,这意味着一对电极之间的耐电压可以高于常规电极。
    • 90. 发明授权
    • Control device for a closure member of a vehicle
    • 用于车辆的关闭构件的控制装置
    • US07714526B2
    • 2010-05-11
    • US11715812
    • 2007-03-07
    • Takayuki KawakuraNarimitsu KoboriTakao AraiKenichi HiranoMasahiro Fueki
    • Takayuki KawakuraNarimitsu KoboriTakao AraiKenichi HiranoMasahiro Fueki
    • H02P7/00
    • H02H3/006H02H7/0851H02H7/093
    • The control device for a closure member of a vehicle according to the present invention comprises: estimated load calculation means (8b) for obtaining an estimated load from a rotation speed, acceleration, and drive voltage of a DC motor (3) for driving a closure member (9); motor torque calculation means (8b) for calculating a motor torque from the rotation speed and drive voltage of the motor; reference torque calculation means (8f) for calculating a reference torque based on a stationary state of the motor torque; and pinching determination means (8c) for determining a pinching of an object based on the estimated load, motor torque and reference torque, wherein the pinching determination means determines that there is no pinching when at least one of the estimated load and the motor torque is below the reference torque even when the estimated load is greater than a prescribed threshold value.
    • 根据本发明的用于车辆的关闭构件的控制装置包括:用于从用于驱动闭合件的DC电动机(3)的旋转速度,加速度和驱动电压获得估计负载的估计负载计算装置(8b) 会员(9); 用于根据所述电动机的转速和驱动电压计算电动机转矩的电动机转矩计算装置(8b) 用于基于电动机转矩的静止状态来计算基准转矩的基准转矩计算单元(8f) 以及用于基于所估计的负载,电动机转矩和参考转矩来确定对象的夹持的夹持确定装置(8c),其中,当所估计的负载和所述电动机转矩中的至少一个为 即使当估计负载大于规定的阈值时,也低于基准转矩。