专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明申请

US20050158881A1 METHOD OF MAKING TOROIDAL MRAM CELLS 失效
标题翻译：制造TOROIDAL MRAM细胞的方法
公开(公告)号：US20050158881A1
公开(公告)日：2005-07-21
申请号：US10758659
申请日：2004-01-15
申请人： Manish Sharma
发明人： Manish Sharma
IPC分类号： G11C11/16 , H01L21/00 , H01L21/336 , H01L43/12
CPC分类号： H01L43/12 , G11C11/16
摘要： This invention provides a method of making nano-scaled toroidal magnetic memory cells, such as may be used, for example, in magnetic random access memory (MRAM). In a particular embodiment a semiconductor wafer substrate is prepared and a conductor layer is provided upon the wafer. A hard layer is deposited upon the first conductor. From the hard layer, ion etching is employed to form an annular wall about a pillar, the wall and pillar defining an annular slot. A ferromagnetic data layer is deposited within the annular slot and a junction stack is then provided upon at least a portion of the data layer. A dielectric is applied to insulate the structure and then planarized to expose the pillar.
摘要翻译：本发明提供了一种制造纳米级环形磁存储器单元的方法，例如可用于例如磁性随机存取存储器（MRAM）。在特定实施例中，制备半导体晶片衬底并且在晶片上提供导体层。硬层沉积在第一导体上。从硬层，使用离子蚀刻来形成围绕柱的环形壁，壁和柱限定环形槽。铁磁数据层沉积在环形槽内，然后在数据层的至少一部分上提供结堆叠。施加电介质以使结构绝缘，然后平坦化以暴露柱。

82. 发明申请

US20050157540A1 Soft-reference four conductor magnetic memory storage device 有权
标题翻译：软参考四芯磁存储器
公开(公告)号：US20050157540A1
公开(公告)日：2005-07-21
申请号：US10758658
申请日：2004-01-15
申请人： Fredrick Perner , Manish Sharma
发明人： Fredrick Perner , Manish Sharma
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L43/08 , G11C11/00
CPC分类号： G11C11/15
摘要： This invention provides a soft-reference four conductor magnetic memory storage device. In a particular embodiment, there are a plurality of parallel electrically conductive first sense conductors and a plurality of parallel electrically conductive second sense conductors. The first and second sense conductors may provide a cross point array or a series connected array. Soft-reference magnetic memory cells are provided in electrical contact with and located and at each intersection. In addition there are a plurality of parallel electrically conductive write rows substantially proximate to and electrically isolated from the first sense conductors. A plurality of parallel electrically conductive write columns transverse to the write rows, substantially proximate to and electrically isolated from the second sense conductors, forming a write cross point array with a plurality of intersections, is also provided. Sense magnetic fields generated by at least one conductor orient the soft-reference layer but do not alter the data stored within the cell. An associated method of use is also provided.
摘要翻译：本发明提供一种软参考四导体磁存储器存储装置。在特定实施例中，存在多个平行导电的第一感测导体和多个平行导电的第二感测导体。第一和第二感测导体可以提供交叉点阵列或串联连接的阵列。软参考磁存储器单元与每个交叉点电接触并定位和设置。此外，还存在多个平行的导电写入行，其基本上接近并与第一感测导体电隔离。还提供了横向于写入行的多个平行的导电写入列，其基本上接近第二感测导体并与第二感测导体电隔离，形成具有多个交点的写入交叉点阵列。由至少一个导体产生的感测磁场定向软参考层，但不改变存储在单元内的数据。还提供了相关联的使用方法。

83. 发明授权

US06903403B2 Magnetic memory cell having an annular data layer and a soft reference layer 有权
公开(公告)号：US06903403B2
公开(公告)日：2005-06-07
申请号：US10902925
申请日：2004-07-30
申请人： Manish Sharma , Lung Tran
发明人： Manish Sharma , Lung Tran
IPC分类号： H01L21/336 , H01L21/8238 , H01L27/108 , H01L27/22 , H01L29/76 , H01L29/94 , H01L43/12
CPC分类号： H01L27/222 , H01L43/12
摘要： An exemplary nonvolatile memory array comprises a substrate and a plurality of memory cells formed on the substrate, each of the memory cells being addressable via at least first and second conductors during operations. An exemplary memory cell in the exemplary memory array includes a ferromagnetic annular data layer having an opening, the opening enabling the second conductor to electrically contact the first conductor, an intermediate layer on at least a portion of the annular data layer, and a soft reference layer on at least a portion of the intermediate layer.

84. 发明授权

US06894918B2 Shared volatile and non-volatile memory 有权
标题翻译：共享易失性和非易失性存储器
公开(公告)号：US06894918B2
公开(公告)日：2005-05-17
申请号：US10697367
申请日：2003-10-30
申请人： Manish Sharma , Frederick Perner
发明人： Manish Sharma , Frederick Perner
IPC分类号： G06F12/16 , G11C11/00 , G11C11/15 , G11C11/22 , G11C11/404 , G11C11/405 , G11C14/00 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L43/08 , G11C11/25
CPC分类号： G11C14/0036 , G11C11/005 , G11C11/404 , G11C11/405 , G11C14/00
摘要： The invention includes an apparatus and a method that provides a memory back-up system. The memory back-up system includes a first memory cell, and a non-volatile memory cell that is interfaced to the first memory cell. Control circuitry allows data to be written to either the first memory cell or the non-volatile memory cell, and provides transfer of the data from either the first memory cell or the non-volatile memory cell, to the other of either the first memory cell or the non-volatile memory cell. The memory back-up system can also include a plurality of first memory cells, and a plurality of non-volatile memory cells that are interfaced to the first memory cells. Control circuitry allows data to be written to either the first memory cells or the non-volatile memory cells, and that provides transfer of the data from either the first memory cells or the non-volatile memory cells, to the other of either the first memory cells or the non-volatile memory cells.
摘要翻译：本发明包括提供存储器备份系统的装置和方法。存储器备份系统包括第一存储器单元和与第一存储器单元接口的非易失性存储器单元。控制电路允许将数据写入第一存储器单元或非易失性存储单元，并且将数据从第一存储器单元或非易失性存储单元传送到第一存储单元或非易失性存储单元。存储器备份系统还可以包括多个第一存储器单元以及与第一存储器单元相连接的多个非易失性存储器单元。控制电路允许将数据写入第一存储器单元或非易失性存储器单元，并且将数据从第一存储器单元或非易失性存储器单元传送到第一存储器单元或非易失性存储单元。

85. 发明申请

US20050101035A1 Method for constructing a magneto-resistive element 审中-公开
标题翻译：用于构造磁阻元件的方法
公开(公告)号：US20050101035A1
公开(公告)日：2005-05-12
申请号：US10846101
申请日：2004-11-10
申请人： Janice Nickel , Thomas Anthony , Manish Sharma , Manoj Bhattacharyya
发明人： Janice Nickel , Thomas Anthony , Manish Sharma , Manoj Bhattacharyya
IPC分类号： H01L21/00 , H01L43/12
CPC分类号： H01L43/12
摘要： A magneto-resistive element is constructed. A ferromagnetic sense layer is deposited on a surface. The ferromagnetic sense layer is patterned. An etch is performed in preparation for depositing a dielectric layer. The dielectric layer is deposited over the sense layer. A ferromagnetic pinned layer is deposited over the dielectric layer.
摘要翻译：构造了一个磁阻元件。铁磁感应层沉积在表面上。铁磁感应层被图案化。进行蚀刻以准备沉积介电层。介电层沉积在感应层上。在电介质层上沉积铁磁钉扎层。

86. 发明授权

US06891212B2 Magnetic memory device having soft reference layer 有权
标题翻译：具有软参考层的磁存储器件
公开(公告)号：US06891212B2
公开(公告)日：2005-05-10
申请号：US10697191
申请日：2003-10-30
申请人： Manish Sharma , Thomas C. Anthony , Lung Tran
发明人： Manish Sharma , Thomas C. Anthony , Lung Tran
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L29/76
CPC分类号： G11C11/16
摘要： A magnetic memory device includes first and second ferromagnetic layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions. The first ferromagnetic layer has a higher coercivity than the second ferromagnetic layer. The magnetic memory device further includes a structure for forming a closed flux path with the second ferromagnetic layer.
摘要翻译：磁存储器件包括第一和第二铁磁层。每个铁磁层具有可以在两个方向中的任一方向上取向的磁化。第一铁磁层具有比第二铁磁层更高的矫顽力。磁存储器件还包括用于与第二铁磁层形成闭合磁通路径的结构。

87. 发明授权

US06850433B2 Magnetic memory device and method 有权
标题翻译：磁记忆装置及方法
公开(公告)号：US06850433B2
公开(公告)日：2005-02-01
申请号：US10196877
申请日：2002-07-15
申请人： Manish Sharma , Lung The Tran
发明人： Manish Sharma , Lung The Tran
IPC分类号： H01L27/105 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L43/08 , G11C11/15
CPC分类号： B82Y25/00 , G11C11/16 , H01F10/3254 , H01F10/3277
摘要： A magnetic memory device can include a synthetic ferrimagnetic data, a soft reference layer and a tunneling layer. The synthetic ferrimagnetic data layer has a magnetic moment directable to a first orientation and a second orientation. The soft reference layer has a lower coercivity than the synthetic ferrimagnetic data layer. The tunneling layer has electrical resistance qualities which are influenced by magnetic moment orientations of the synthetic ferrimagnetic data layer and the soft reference layer.
摘要翻译：磁存储器件可以包括合成亚铁磁数据，软参考层和隧穿层。合成亚铁磁数据层具有可定向于第一取向和第二取向的磁矩。软参考层具有比合成亚铁磁数据层低的矫顽力。隧道层具有受合成铁磁数据层和软参考层的磁矩取向影响的电阻质量。

88. 发明授权

US06808940B2 Magnetic shielding for reducing magnetic interference 有权
标题翻译：磁屏蔽减少磁干扰
公开(公告)号：US06808940B2
公开(公告)日：2004-10-26
申请号：US10232209
申请日：2002-08-30
申请人： Manish Sharma , Manoj Bhattacharyya
发明人： Manish Sharma , Manoj Bhattacharyya
IPC分类号： H01L2100
CPC分类号： G11C11/15 , G11C5/025
摘要： A magnetic memory array comprises a plurality of magnetic memory cells, a magnetic shielding disposed adjacent to at least one of the magnetic memory cells to reduce magnetic interference with respect to another of the magnetic memory cells, and an insulator disposed as to separate at least a portion of the magnetic shielding from the at least one magnetic memory cell. The magnetic shielding may be a magnetic shield layer, patterned magnetic shield materials, and/or magnetic particles embedded in the insulator.
摘要翻译：磁存储器阵列包括多个磁存储器单元，与至少一个磁存储单元相邻设置的磁屏蔽，以减小相对于另一个磁存储单元的磁干扰;以及绝缘体，其设置成至少分离来自至少一个磁存储单元的部分磁屏蔽。磁屏蔽可以是嵌入绝缘体中的磁屏蔽层，图案化磁屏蔽材料和/或磁性颗粒。

89. 发明授权

US06798404B2 Integrated digitizing tablet and display apparatus and method of operation 有权
标题翻译：集成数字化平板电脑和显示设备及操作方法
公开(公告)号：US06798404B2
公开(公告)日：2004-09-28
申请号：US10038466
申请日：2002-01-02
申请人： Manish Sharma
发明人： Manish Sharma
IPC分类号： G09G500
CPC分类号： G06F3/0412 , G06F3/046
摘要： An integrated digitizing tablet and display apparatus is disclosed. The digitizing tablet portion of the apparatus is comprised of an array of magnetic random access memory (MRAM) cells, wherein each MRAM cell is responsive to an externally applied magnetic field. Each memory cell has a magnetic bit that changes orientation upon application of an externally applied magnetic field to produce an electrical signal based on the orientation of the bit when a second electric field is applied across the array. The display is comprised of an array of pixel cells and each pixel cell is coupled to one of the MRAM cells. The MRAM cell activates the pixel cell by the electrical signal produced by the MRAM cell. Thus, what is achieved is an integrated digitizing tablet and display that has digitizing cells that directly control the display cells without the need for additional processors.
摘要翻译：公开了一种集成的数字化图形输入板和显示装置。该装置的数字化图形输入部分由磁性随机存取存储器（MRAM）单元阵列组成，其中每个MRAM单元响应外部施加的磁场。每个存储器单元具有磁性位，当应用外部施加的磁场时，当在阵列上施加第二电场时，基于位的取向产生电信号，从而改变取向。显示器由像素单元的阵列组成，并且每个像素单元耦合到MRAM单元之一。 MRAM单元通过由MRAM单元产生的电信号激活像素单元。因此，实现的是集成的数字化平板电脑和显示器，其具有直接控制显示单元的数字化单元，而不需要额外的处理器。

90. 发明授权

US06794697B1 Asymmetric patterned magnetic memory 有权
标题翻译：非对称图案磁记忆体
公开(公告)号：US06794697B1
公开(公告)日：2004-09-21
申请号：US10677394
申请日：2003-10-01
申请人： Manish Sharma
发明人： Manish Sharma
IPC分类号： H01L2976
CPC分类号： H01L27/222 , B82Y25/00 , H01F10/06 , H01F10/324 , H01F10/3254 , H01L43/08
摘要： This invention provides an asymmetrically patterned magnetic memory storage device. In a particular embodiment at least one magnetic memory cell is provided. Each magnetic memory cell provides at least one ferromagnetic data layer of a first size, the data layer characterized by an alterable orientation of magnetization, an intermediate layer in contact with the data layer and at least one ferromagnetic reference layer of a second size, the reference layer characterized by a reference magnetic field. The reference layer is in contact with the intermediate layer, opposite from and asymmetric to the data layer. The magnetic memory cell is characterized as having only one-end involvement. More specifically, the asymmetric alignment provides that only one set of magnetic poles are in substantial vertical alignment, and as such subject to the strong influence of one another.
摘要翻译：本发明提供一种不对称图案化的磁存储器存储装置。在特定实施例中，提供了至少一个磁存储单元。每个磁存储单元提供至少一个第一大小的铁磁数据层，该数据层的特征在于磁化方向的可变方向，与该数据层接触的中间层和至少一个第二尺寸的铁磁参考层，该参考其特征在于参考磁场。参考层与数据层相反并且与数据层不对称的中间层接触。磁记忆单元的特征在于仅具有一端参与。更具体地，不对称对准提供了仅一组磁极处于基本垂直对准，并且因此受到彼此的强烈影响。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式