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81. 发明授权

US06425806B2 Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device 有权
公开(公告)号：US06425806B2
公开(公告)日：2002-07-30
申请号：US09804234
申请日：2001-03-13
申请人： Katsuya Okumura , Riichirou Aoki , Hiromi Yajima , Seiji Ishikawa , Manabu Tsujimura
发明人： Katsuya Okumura , Riichirou Aoki , Hiromi Yajima , Seiji Ishikawa , Manabu Tsujimura
IPC分类号： B24B100
CPC分类号： H01L21/67161 , B08B1/04 , B24B27/0023 , B24B37/04 , B24B37/345 , B24B51/00 , B24B55/12 , F24F3/161 , H01L21/67028 , H01L21/67046 , H01L21/67057 , H01L21/67167 , H01L21/67219 , H01L21/67745 , H01L21/67778 , H03M13/39 , H04N5/4401 , H04N5/455
摘要： A polishing apparatus includes an arrangement of a plurality of units to deal with various operations and a robot having at least one arm. The plurality of units are disposed around the robot and include a loading unit for receiving thereon a, e.g. dry, workpiece to be polished, a polishing system including at least one polishing unit for polishing the workpiece, a washing system and a drying system at least including one washing unit for washing and drying the polished workpiece, and an unloading unit for receiving thereon a resultant clean and dry polished workpiece.

82. 再颁专利

USRE36610E Evacuation apparatus and evacuation method 失效
标题翻译：疏散装置和撤离方法
公开(公告)号：USRE36610E
公开(公告)日：2000-03-14
申请号：US883957
申请日：1997-06-27
申请人： Katsuya Okumura , Fumio Kuriyama , Yukio Murai , Manabu Tsujimura , Hiroshi Sobukawa
发明人： Katsuya Okumura , Fumio Kuriyama , Yukio Murai , Manabu Tsujimura , Hiroshi Sobukawa
IPC分类号： F04B37/06 , F04D19/04 , B01D8/00
CPC分类号： F04D19/046 , F04B37/06
摘要： An evacuation apparatus and method using a turbomolecular pump having a rotor provided with a plurality of rotor blades and a spacer provided with a plurality of stator blades so that gas molecules are sucked in from a suction port, compressed and discharged from an exhaust port of the turbomolecular pump is disclosed. A heat exchanger is provided at the suction port side of the turbomolecular pump to freeze-trap gas molecules from being cooled by a helium refrigerator.The gate valve is disposed upstream of the heat exchanger and is provided in a suction pipe which extends between the vacuum vessel and the turbomolecular pump. In exhausting the vacuum vessel, the gate valve is opened and, in this state, the turbomolecular pump and the helium refrigerator are run. During regeneration, the gate valve is closed, the turbomolecular pump is run, and the heat exchanger is heated by means of a heater or by operation of the helium refrigator being suspended, thereby sublimating molecules freeze-trapped in the heat exchanger.
摘要翻译：一种使用涡轮分子泵的排气装置和方法，该涡轮分子泵具有设置有多个转子叶片的转子和设置有多个定子叶片的间隔件，使得气体分子从吸入口被吸入，公开了涡轮分子泵。在涡轮分子泵的吸入口侧设置有热交换器，以将气体分子冷冻而不被氦制冷机冷却。闸阀设置在热交换器的上游，并且设置在在真空容器和涡轮分子泵之间延伸的吸入管中。在排空真空容器时，打开闸阀，在这种状态下运行涡轮分子泵和氦制冷机。在再生期间，闸阀关闭，涡轮分子泵运行，并且热交换器通过加热器或通过悬浮的氦气回流器的操作被加热，从而升华分子被冻结在热交换器中。

83. 发明授权

US5705230A Method for filling small holes or covering small recesses in the surface of substrates 失效
标题翻译：填充小孔或覆盖基板表面的小凹槽的方法
公开(公告)号：US5705230A
公开(公告)日：1998-01-06
申请号：US324460
申请日：1994-10-17
申请人： Toru Matanabe , Hirokazu Ezawa , Masahiro Miyata , Yukio Ikeda , Manabu Tsujimura , Hiroaki Inoue , Takeyuki Odaira , Naoaki Ogure
发明人： Toru Matanabe , Hirokazu Ezawa , Masahiro Miyata , Yukio Ikeda , Manabu Tsujimura , Hiroaki Inoue , Takeyuki Odaira , Naoaki Ogure
IPC分类号： C23C18/34 , C23C18/16 , C23C26/00 , C25D5/18 , C25D5/20 , H01L21/48 , H01L21/768 , H05K3/42 , B05D1/18
CPC分类号： C23C18/1608 , C23C18/1612 , C23C18/1651 , C23C18/1666 , C23C18/1831 , H01L21/486 , H01L21/76877 , H05K3/422
摘要： The improved method comprises contacting a substrate 5 at least once by a liquid containing the elements that compose a pure metal or an alloy with which the small holes or recesses 3a in the substrate 5 are to be filled or covered, whereby the liquid wets the inner surfaces of said small holes or recesses 3a while, at the same time, said pure metal or said alloy is deposited on the surface of said substrate 5. The method is capable of filling small holes or covering small recesses in the surface of the substrate 5 with improved efficiency while, at the same time, it improves the heat resistance and materials stability of the part that contains the formed filling or covering layer.
摘要翻译：改进的方法包括使基底5至少一次由含有构成纯金属的元素的液体或与基底5中的小孔或凹槽3a填充或覆盖的合金相接触，由此液体润湿内部所述小孔或凹部3a的表面，同时所述纯金属或所述合金沉积在所述基板5的表面上。该方法能够填充小孔或覆盖基板5的表面中的小凹槽同时提高了包含形成的填充或覆盖层的部件的耐热性和材料稳定性。

84. 发明授权

US5656542A Method for manufacturing wiring in groove 失效
标题翻译：槽内布线方法
公开(公告)号：US5656542A
公开(公告)日：1997-08-12
申请号：US544453
申请日：1995-10-18
申请人： Masahiro Miyata , Hirokazu Ezawa , Naoaki Ogure , Manabu Tsujimura , Takeyuki Ohdaira , Hiroaki Inoue , Yukio Ikeda
发明人： Masahiro Miyata , Hirokazu Ezawa , Naoaki Ogure , Manabu Tsujimura , Takeyuki Ohdaira , Hiroaki Inoue , Yukio Ikeda
IPC分类号： H01L21/768 , H01L23/532 , H01L21/26
CPC分类号： H01L21/76873 , H01L21/76843 , H01L21/76858 , H01L21/76877 , H01L23/53242 , H01L23/53247 , H01L2924/0002
摘要： In a semiconductor device and a method for manufacturing the same according to the present invention, for example, an insulating film is deposited on a silicon substrate, and a concave groove is formed in the insulating film in accordance with a predetermined wiring pattern. Titanium and palladium are deposited in sequence on the insulating film to form a titanium film and a palladium film, respectively. A silver film is formed on the palladium film by electroplating, and a groove-shaped silver wiring layer is formed by polishing. The resultant structure is annealed at a temperature of about 700.degree. C., and an intermetallic compound is formed by alloying the titanium film and palladium film with each other. Consequently, a burying type wiring layer whose resistance is lower than that of aluminum, is constituted by the silver wiring layer and intermetallic compound.
摘要翻译：在根据本发明的半导体器件及其制造方法中，例如，在硅衬底上沉积绝缘膜，并且根据预定的布线图案在绝缘膜中形成凹槽。钛和钯依次沉积在绝缘膜上以分别形成钛膜和钯膜。通过电镀在钯膜上形成银膜，通过研磨形成槽状的银布线层。所得结构在约700℃的温度下退火，并通过使钛膜和钯膜彼此合金化形成金属间化合物。因此，电阻低于铝的掩埋型布线层由银布线层和金属间化合物构成。

85. 发明授权

US5632868A Method and apparatus for generating ozone and methods of its use 失效
标题翻译：用于生成臭氧的方法和装置及其使用方法
公开(公告)号：US5632868A
公开(公告)日：1997-05-27
申请号：US518418
申请日：1995-08-23
申请人： Minoru Harada , Ryoichi Shinjo , Manabu Tsujimura , Rempei Nakata , Kunihiro Miyazaki , Naruhiko Kaji , Yutaka Nakano
发明人： Minoru Harada , Ryoichi Shinjo , Manabu Tsujimura , Rempei Nakata , Kunihiro Miyazaki , Naruhiko Kaji , Yutaka Nakano
IPC分类号： C01B13/10 , C01B13/11 , C23C8/12 , C23C16/40 , C23C16/44 , C23C16/448
CPC分类号： C23C16/448 , C01B13/10 , C01B13/11 , C23C16/402 , C23C16/4402 , C23C8/12 , C01B2201/60
摘要： Ozonizer (10) which supplies a feed gas to ozone generating cell (11) under application of a high voltage and which delivers an ozone gas through an ozone gas transport path (consisting of pipes (14) and (15)) as it has been generated in said ozone generating cell (11) is characterized in that the ozone gas transport path is furnished with means for removing at least one of NOx, HF and SOx (in the drawings, the means is for removing NOx) and that the ozone gas from the ozone generating cell (11) is passed through said removing means, whereby at least one of NOx, HF and SOx in said ozone gas is removed before it is delivered to a subsequent stage. The product ozone is not contaminated with Cr compounds at all or insufficiently contaminated to cause any practical problems in the fabrication of highly integrated semiconductor devices.Alternatively, ozonizer (10) which comprises an ozone generating cell (11) having an inlet (8) for supplying a feed gas, high voltage applying means (35) and an outlet (29) for discharging the ozone generated, and ozone delivery paths (30) and (31) for delivering the generated ozone is characterized in that oxygen (1) supplemented with 10-20 vol % of carbon dioxide and/or carbon monoxide (2) is used as the feed gas. The thus produced ozone is significantly low in the level of Cr compounds and, hence, can suitably be used in the formation of metal oxides, in particular, silicon oxide.
摘要翻译：臭氧发生器（10），其在施加高压下向臭氧发生电池（11）供应进料气体，并且通过臭氧气体输送路径（由管道（14）和（15）组成）输送臭氧气体）在臭氧发生电池（11）中产生的臭氧气体输送路径的特征在于，臭氧气体输送路径具有用于除去NOx，HF和SO x中的至少一种的装置（在附图中，用于除去NOx的装置），臭氧气体从臭氧发生电池（11）通过所述去除装置，由此在所述臭氧气体中的NOx，HF和SO x中的至少一种在被输送到后续阶段之前被去除。产物臭氧根本不被Cr化合物污染或污染不足，导致制造高度集成的半导体器件的任何实际问题。或者，臭氧发生器（10）包括具有用于供应进料气体的入口（8）的臭氧发生电池（11），用于排出产生的臭氧的高压施加装置（35）和出口（29），以及臭氧输送路径（30）和（31）用于输送生成的臭氧的特征在于，使用补充有10〜20体积％的二氧化碳和/或一氧化碳（2）的氧（1）作为原料气。这样生成的臭氧在Cr化合物的含量上显着地很低，因此可以适当地用于形成金属氧化物，特别是氧化硅。

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