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81. 发明申请

US20070262364A1 METHOD OF MAKING WAFER STRUCTURE FOR BACKSIDE ILLUMINATED COLOR IMAGE SENSOR 失效
标题翻译：制造背面照明彩色图像传感器的波形结构的方法
公开(公告)号：US20070262364A1
公开(公告)日：2007-11-15
申请号：US11626664
申请日：2007-01-24
申请人： Tzu-Hsuan Hsu , Chris Hsieh , Dun-Nian Yaung , Chung-Yi Yu
发明人： Tzu-Hsuan Hsu , Chris Hsieh , Dun-Nian Yaung , Chung-Yi Yu
IPC分类号： H01L31/113 , H01L31/062
CPC分类号： H01L31/18 , H01L27/1203 , H01L27/1461 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H01L27/148
摘要： A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface, and a plurality of pixels formed on the front surface of the semiconductor substrate. The sensor further includes a plurality of absorption depths formed within the back surface of the semiconductor substrate. Each of the plurality of absorption depths is arranged according to each of the plurality of pixels. A method for forming a backside illuminated includes providing a semiconductor substrate having a front surface and a back surface and forming a first, second, and third pixel on the front surface of the semiconductor substrate. The method further includes forming a first, second, and third thickness within the back surface of the semiconductor substrate, wherein the first, second, and third thickness lies beneath the first, second, and third pixel, respectively.
摘要翻译：背面照明传感器包括具有前表面和后表面的半导体衬底和形成在半导体衬底的前表面上的多个像素。传感器还包括形成在半导体衬底的后表面内的多个吸收深度。多个吸收深度中的每一个根据多个像素中的每一个排列。用于形成背面照明的方法包括提供具有前表面和后表面的半导体衬底，并在半导体衬底的前表面上形成第一，第二和第三像素。该方法还包括在半导体衬底的后表面内形成第一，第二和第三厚度，其中第一，第二和第三厚度分别位于第一，第二和第三像素之下。

82. 发明申请

US20070117253A1 METHOD FOR PROVIDING METAL EXTENSION IN BACKSIDE ILLUMINATED SENSOR FOR WAFER LEVEL TESTING 有权
标题翻译：在背光照明传感器中提供金属扩展用于水平测量的方法
公开(公告)号：US20070117253A1
公开(公告)日：2007-05-24
申请号：US11532674
申请日：2006-09-18
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung
IPC分类号： H01L21/00 , H01L31/112
CPC分类号： H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L31/0203 , H01L2224/48463 , H01L2924/0002 , H01L2924/00
摘要： A method of providing metal extension in a backside illuminated image sensor is provided in the present disclosure. In one embodiment, a first set of pads and a second set of pads, and a metal layer are provided in a backside illuminated image sensor. The first set of pads are electrically coupled to the second set of pads through the metal layer, and a pad in the second set of pads is exposed to the surface of the backside illuminated image sensor for testing. In an alternative embodiment, a first set of pads, at least one second pad directly positioned over the first set of pads are provided in a backside illuminated image sensor. The first set of pads are electrically coupled to the at least one second pad and the at least one second pad is exposed to the surface of the backside illuminated image sensor for testing.
摘要翻译：在本公开中提供了在背面照明图像传感器中提供金属延伸的方法。在一个实施例中，第一组焊盘和第二组焊盘以及金属层设置在背面照明的图像传感器中。第一组焊盘通过金属层电耦合到第二组焊盘，并且第二组焊盘中的焊盘暴露于背面照射的图像传感器的表面用于测试。在替代实施例中，第一组焊盘，至少一个第二焊盘，直接位于第一组焊盘上方，设置在背面照明的图像传感器中。第一组焊盘电耦合到至少一个第二焊盘，并且至少一个第二焊盘暴露于背面照射的图像传感器的表面用于测试。

83. 发明授权

US07078779B2 Enhanced color image sensor device and method of making the same 有权
公开(公告)号：US07078779B2
公开(公告)日：2006-07-18
申请号：US10966641
申请日：2004-10-15
申请人： Wen-De Wang , Dun-Nian Yaung , Tzu-Hsuan Hsu
发明人： Wen-De Wang , Dun-Nian Yaung , Tzu-Hsuan Hsu
IPC分类号： H01L31/0232
CPC分类号： H01L27/14621 , H01L27/14623
摘要： A semiconductor device including a substrate having a plurality of image sensing elements formed therein, a plurality of spaced apart color filters overlying the substrate and a light blocking material interposed between adjacent spaced apart color filters.

84. 发明申请

US20060092301A1 High dynamic range image sensor cell 有权
标题翻译：高动态范围图像传感器单元
公开(公告)号：US20060092301A1
公开(公告)日：2006-05-04
申请号：US10980639
申请日：2004-11-03
申请人： Dun-Nian Yaung , Ho-Ching Chien , Tzu-Hsuan Hsu
发明人： Dun-Nian Yaung , Ho-Ching Chien , Tzu-Hsuan Hsu
IPC分类号： H04N5/335
CPC分类号： H04N5/35509
摘要： An image sensor cell includes a first MOS transistor coupled to an operating voltage for providing an output voltage of the image sensor cell with the output voltage changing conformingly with a voltage on a gate of the first MOS transistor. A photodiode is coupled to a floating node which further controls the voltage of the gate of the first MOS transistor. A photoconductor is coupled between the operating voltage and the floating node. The photoconductor has its resistance varying in response to a magnitude change of an imposed illumination so that the floating node is provided with additional electrical charges conformingly through the photoconductor while the photodiode drains electrical charges, thereby decreasing a voltage reduction rate of the voltage on the gate of the first MOS transistor.
摘要翻译：图像传感器单元包括耦合到工作电压的第一MOS晶体管，用于提供图像传感器单元的输出电压，输出电压与第一MOS晶体管的栅极上的电压一致地改变。光电二极管耦合到浮动节点，其进一步控制第一MOS晶体管的栅极的电压。光电导体耦合在工作电压和浮动节点之间。光电导体的电阻响应于施加的照明的幅度变化而变化，使得浮动节点在光电二极管耗尽电荷的同时，通过光电导体顺序地被提供额外的电荷，从而降低栅极上的电压的电压降低率的第一MOS晶体管。

85. 发明申请

US20060073629A1 Light guide for image sensor 有权
标题翻译：图像传感器光导
公开(公告)号：US20060073629A1
公开(公告)日：2006-04-06
申请号：US11285671
申请日：2005-11-22
申请人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chein-Hsien Tseng
发明人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chein-Hsien Tseng
IPC分类号： H01L21/00
CPC分类号： H01L27/14625 , H01L27/14685
摘要： A new method to form an image sensor device is achieved. The method comprises forming an image sensing array in a substrate comprising a plurality of light detecting diodes with spaces between the diodes. A first dielectric layer is formed overlying the diodes but not the spaces. The first dielectric layer has a first refractive index. A second dielectric layer is formed overlying the spaces but not the diodes. The second dielectric layer has a second refractive index that is larger than the first refractive index. A new image sensor device is disclosed.
摘要翻译：实现了形成图像传感器装置的新方法。该方法包括在包括在二极管之间具有空间的多个光检测二极管的衬底中形成图像感测阵列。第一介电层形成在二极管上，但不形成空间。第一电介质层具有第一折射率。第二电介质层形成在空间上而不是二极管上。第二电介质层具有大于第一折射率的第二折射率。公开了一种新的图像传感器装置。

86. 发明申请

US20060054939A1 CMOS image sensor 有权
标题翻译： CMOS图像传感器
公开(公告)号：US20060054939A1
公开(公告)日：2006-03-16
申请号：US10980959
申请日：2004-11-04
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Wen-De Wang , Ho-Ching Chien , Shou-Gwo Wuu
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Wen-De Wang , Ho-Ching Chien , Shou-Gwo Wuu
IPC分类号： H01L27/148
CPC分类号： H01L27/14643 , H01L27/14621 , H01L27/14627 , H01L27/14636
摘要： A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to or less than approximately 3 μm. At least one dielectric layer is disposed on the substrate covering the pixel. A color filter is disposed on the least one dielectric layer. A microlens array is disposed on the color filter of the pixel, and the sum of the thickness of all dielectric layers and the color filter divided by the pixel width is equal to or less than approximately 1.87.
摘要翻译：互补金属氧化物半导体场效应晶体管（CMOS-FET）图像传感器。在基板上形成有源感光像素。像素的至少一侧具有等于或小于约3μm的宽度。在覆盖像素的基板上设置至少一个电介质层。滤色器设置在至少一个电介质层上。微透镜阵列设置在像素的滤色器上，所有电介质层和滤色器的厚度之和除以像素宽度等于或小于约1.87。

87. 发明授权

US06998207B2 High performance color filter process for image sensor 有权
标题翻译：图像传感器的高性能滤色镜过程
公开(公告)号：US06998207B2
公开(公告)日：2006-02-14
申请号：US10406122
申请日：2003-04-03
申请人： Dun-Nian Yaung
发明人： Dun-Nian Yaung
IPC分类号： G02B5/20
CPC分类号： G02B5/201
摘要： A method of fabricating a color filter image sensor, comprising the following sequential steps. A structure having a first color filter layer formed thereover is provided. The first color filter layer is patterned to form at least one first color filter layer portion. A second color filter layer is formed over the structure and the at least one patterned first color filter layer portion. The second color filter layer is patterned to form at least one second color filter layer portion. A third color filter layer is formed over the structure, the at least one patterned first color filter layer portion and the at least one second color filter layer portion. The at least one third color filter layer is etched back to form: at least one third color filter layer portion; a planar upper surface common to all of the at least one first, second and third color filter layer portions. A microlens layer is formed over the planar upper surface to form the color filter image sensor.
摘要翻译：一种制造滤色器图像传感器的方法，包括以下顺序步骤。提供一种其上形成有第一滤色器层的结构。图案化第一滤色器层以形成至少一个第一滤色器层部分。在所述结构和所述至少一个图案化的第一滤色器层部分上形成第二滤色器层。图案化第二滤色器层以形成至少一个第二滤色器层部分。在所述结构上形成第三滤色器层，所述至少一个图案化的第一滤色器层部分和所述至少一个第二滤色器层部分。将至少一个第三滤色器层回蚀刻形成：至少一个第三滤色器层部分; 所述至少一个第一，第二和第三滤色器层部分共同的平面上表面。在平面上表面上形成微透镜层以形成滤色器图像传感器。

88. 发明申请

US20060014314A1 Image sensor with light guides 有权
标题翻译：带导光板的图像传感器
公开(公告)号：US20060014314A1
公开(公告)日：2006-01-19
申请号：US11229655
申请日：2005-09-20
申请人： Dun-Nian Yaung , Chung-Yi Yu
发明人： Dun-Nian Yaung , Chung-Yi Yu
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/1462 , H01L27/14623 , H01L27/14625
摘要： An image sensor device and fabrication method thereof. An image sensing array is formed in a substrate, wherein the image sensing array comprises a plurality of photosensors with spaces therebetween. A first dielectric layer with a first refractive index is formed overlying the spaces but not the photosensors. A conformal second dielectric layer with a second refractive index is formed on a sidewall of the first dielectric layer. A third dielectric layer with a third refractive index is formed overlying the photosensors but not the spaces. The third refractive index is greater than the second refractive index. A light guide constructed by the second and third dielectric layers is formed overlying each photosensor, thereby preventing incident light from striking other photosensors.
摘要翻译：一种图像传感器装置及其制造方法。图像感测阵列形成在基板中，其中图像感测阵列包括在其间具有间隔的多个光电传感器。具有第一折射率的第一介电层形成在空间上而不是光电传感器上。在第一介电层的侧壁上形成具有第二折射率的共形的第二介电层。形成具有第三折射率的第三介电层，覆盖光电传感器而不是空间。第三折射率大于第二折射率。由第二和第三电介质层构成的导光体形成在每个光电传感器上，从而防止入射光撞击其他感光体。

89. 发明申请

US20050164440A1 Salicided MOS device and one-sided salicided MOS device, and simultaneous fabrication method thereof 有权
标题翻译：浸水MOS器件和单面水银MOS器件及其同时制造方法
公开(公告)号：US20050164440A1
公开(公告)日：2005-07-28
申请号：US11084305
申请日：2005-03-18
申请人： Dun-Nian Yaung , Sou-Kuo Wu , Ho-Ching Chien
发明人： Dun-Nian Yaung , Sou-Kuo Wu , Ho-Ching Chien
IPC分类号： H01L21/336 , H01L21/8242 , H01L27/06 , H01L27/108 , H01L27/146 , H01L21/8234
CPC分类号： H01L27/10894 , H01L27/0629 , H01L27/10897 , H01L27/14601 , H01L27/14609 , H01L27/14689 , H01L29/665
摘要： A method of fabricating a salicided MOS and a one-sided salicided MOS device on a semiconductor substrate. A conformal oxide layer and an organic layer are sequentially formed on first and second MOS devices and the substrate. The first MOS has a first gate structure, a first spacer and first and second doped regions. The second MOS has a second gate structure, a second spacer and third and fourth doped regions. Anisotropic etching is performed to remove part of the organic layer until the oxide layer on the first and the second gate structures is exposed, wherein a remaining organic layer is left above the substrate. The oxide layer on the first and the second gate structures is removed. The remaining organic layer is removed. The oxide layer on the first, second, and third doped regions is removed. Thus, a silicide layer cannot form on the fourth doped region.
摘要翻译：一种在半导体衬底上制造水化MOS和单面水化MOS器件的方法。在第一和第二MOS器件和衬底上依次形成保形氧化物层和有机层。第一MOS具有第一栅极结构，第一间隔物以及第一和第二掺杂区域。第二MOS具有第二栅极结构，第二间隔物和第三和第四掺杂区域。进行各向异性蚀刻以除去部分有机层，直到暴露出第一和第二栅极结构上的氧化物层，其中剩余的有机层留在衬底上。去除第一和第二栅极结构上的氧化物层。剩下的有机层被去除。去除第一，第二和第三掺杂区域上的氧化物层。因此，在第四掺杂区域上不能形成硅化物层。

90. 发明授权

US06897504B2 Salicided MOS device and one-sided salicided MOS device, and simultaneous fabrication method thereof 有权
公开(公告)号：US06897504B2
公开(公告)日：2005-05-24
申请号：US10403474
申请日：2003-03-31
申请人： Dun-Nian Yaung , Sou-Kuo Wu , Ho-Ching Chen
发明人： Dun-Nian Yaung , Sou-Kuo Wu , Ho-Ching Chen
IPC分类号： H01L21/336 , H01L21/8242 , H01L27/06 , H01L27/108 , H01L27/146
CPC分类号： H01L27/10894 , H01L27/0629 , H01L27/10897 , H01L27/14601 , H01L27/14609 , H01L27/14689 , H01L29/665
摘要： A method of fabricating a salicided MOS and a one-sided salicided MOS device on a semiconductor substrate. A conformal oxide layer and an organic layer are sequentially formed on first and second MOS devices and the substrate. The first MOS has a first gate structure, a first spacer and first and second doped regions. The second MOS has a second gate structure, a second spacer and third and fourth doped regions. Anisotropic etching is performed to remove part of the organic layer until the oxide layer on the first and the second gate structures is exposed, wherein a remaining organic layer is left above the substrate. The oxide layer on the first and the second gate structures is removed. The remaining organic layer is removed. The oxide layer on the first, second, and third doped regions is removed. Thus, a silicide layer cannot form on the fourth doped region.

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