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81. 发明申请

US20130056752A1 SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：硅碳化硅基板，碳化硅基板制造方法和半导体器件制造方法
公开(公告)号：US20130056752A1
公开(公告)日：2013-03-07
申请号：US13599278
申请日：2012-08-30
申请人： Shinsuke Fujiwara , Shin Harada
发明人： Shinsuke Fujiwara , Shin Harada
IPC分类号： H01L29/38 , H01L21/78
CPC分类号： H01L29/1608 , H01L21/02002 , H01L21/02439 , H01L21/02494 , H01L21/02516 , H01L21/02529 , H01L21/02609 , H01L21/02658 , H01L21/046 , H01L21/049 , H01L29/045 , H01L29/66068 , H01L29/7802
摘要： An edge region has a width of 5 mm. A valid region is surrounded by the edge region, and has an area greater than or equal to 100 cm2. At the valid region, a micropipe having a cross-sectional area exceeding 1 μm2 is not present. The valid region includes a plurality of high-quality regions occupying 70% or more of the valid region. Each of the plurality of high-quality regions has a square shape, an area greater than or equal to 1 cm2, and a micropipe density less than or equal to 1 micropipe per 1 cm2.
摘要翻译：边缘区域的宽度为5mm。有效区域由边缘区域包围，并且具有大于或等于100cm 2的面积。在有效区域，不存在横截面积超过1μm2的微管。有效区域包括占有效区域的70％以上的多个高质量区域。多个高质量区域中的每一个具有正方形形状，大于或等于1cm 2的面积，以及每1cm2小于或等于1个微管的微管密度。

82. 发明申请

US20110180813A1 INSULATED GATE BIPOLAR TRANSISTOR 有权
标题翻译：绝缘栅双极晶体管
公开(公告)号：US20110180813A1
公开(公告)日：2011-07-28
申请号：US13122353
申请日：2010-03-23
申请人： Shin Harada , Keiji Wada , Toru Hiyoshi
发明人： Shin Harada , Keiji Wada , Toru Hiyoshi
IPC分类号： H01L29/24 , H01L29/739
CPC分类号： H01L29/7395 , H01L29/045 , H01L29/1608 , H01L29/66068 , H01L29/78
摘要： An IGBT, which is capable of reducing on resistance by reducing channel mobility, includes: an n type substrate made of SiC and having a main surface with an off angle of not less than 50° and not more than 65° relative to a plane orientation of {0001}; a p type reverse breakdown voltage holding layer made of SiC and formed on the main surface of the substrate; an n type well region formed to include a second main surface of the reverse breakdown voltage holding layer; an emitter region formed in the well region to include the second main surface and including a p type impurity at a concentration higher than that of the reverse breakdown voltage holding layer; a gate oxide film formed on the reverse breakdown voltage holding layer; and a gate electrode formed on the gate oxide film. In a region including an interface between the well region and the gate oxide film, a high-concentration nitrogen region is formed to have a nitrogen concentration higher than those of the well region and the gate oxide film.
摘要翻译：能够通过降低沟道迁移率而降低导通电阻的IGBT包括：由SiC制成的n型衬底，其主表面相对于平面取向具有不小于50度且不大于65度的偏离角 {0001}; 由SiC制成的p型反向击穿电压保持层，形成在基板的主表面上; 形成为包括反向击穿电压保持层的第二主表面的n型阱区; 在所述阱区域中形成的包括所述第二主表面并且包含浓度高于所述反向击穿电压保持层的p型杂质的发射极区域; 形成在反向击穿电压保持层上的栅极氧化膜; 以及形成在栅氧化膜上的栅电极。在包括阱区和栅极氧化膜之间的界面的区域中，形成高浓度氮区，使得氮浓度高于阱区和栅极氧化膜的氮浓度。

83. 发明授权

US08525187B2 Insulated gate bipolar transistor 有权
标题翻译：绝缘栅双极晶体管
公开(公告)号：US08525187B2
公开(公告)日：2013-09-03
申请号：US13122353
申请日：2010-03-23
申请人： Shin Harada , Keiji Wada , Toru Hiyoshi
发明人： Shin Harada , Keiji Wada , Toru Hiyoshi
IPC分类号： H01L29/15
CPC分类号： H01L29/7395 , H01L29/045 , H01L29/1608 , H01L29/66068 , H01L29/78
摘要： An IGBT, which is capable of reducing on resistance by reducing channel mobility, includes: an n type substrate made of SiC and having a main surface with an off angle of not less than 50° and not more than 65° relative to a plane orientation of {0001}; a p type reverse breakdown voltage holding layer made of SiC and formed on the main surface of the substrate; an n type well region formed to include a second main surface of the reverse breakdown voltage holding layer; an emitter region formed in the well region to include the second main surface and including a p type impurity at a concentration higher than that of the reverse breakdown voltage holding layer; a gate oxide film formed on the reverse breakdown voltage holding layer; and a gate electrode formed on the gate oxide film. In a region including an interface between the well region and the gate oxide film, a high-concentration nitrogen region is formed to have a nitrogen concentration higher than those of the well region and the gate oxide film.
摘要翻译：能够通过降低沟道迁移率而降低导通电阻的IGBT包括：由SiC制成的n型衬底，其主表面相对于平面取向具有不小于50度且不大于65度的偏离角 {0001}; 由SiC制成的p型反向击穿电压保持层，形成在基板的主表面上; 形成为包括反向击穿电压保持层的第二主表面的n型阱区; 在所述阱区域中形成的包括所述第二主表面并且包含浓度高于所述反向击穿电压保持层的p型杂质的发射极区域; 形成在反向击穿电压保持层上的栅极氧化膜; 以及形成在栅氧化膜上的栅电极。在包括阱区和栅极氧化膜之间的界面的区域中，形成高浓度氮区，使得氮浓度高于阱区和栅极氧化膜的氮浓度。

84. 发明授权

US08502236B2 Insulated gate field effect transistor 有权
标题翻译：绝缘栅场效应晶体管
公开(公告)号：US08502236B2
公开(公告)日：2013-08-06
申请号：US13122377
申请日：2010-03-23
申请人： Shin Harada , Keiji Wada , Toru Hiyoshi
发明人： Shin Harada , Keiji Wada , Toru Hiyoshi
IPC分类号： H01L29/15
CPC分类号： H01L29/7828 , H01L21/049 , H01L29/045 , H01L29/1608 , H01L29/518 , H01L29/66068 , H01L29/7838 , H01L2924/0002 , H01L2924/00
摘要： A MOSFET, which is capable of reducing on resistance by reducing channel mobility even when a gate voltage is high, includes: an n type substrate made of SiC and having a main surface with an off angle of 50°-65° relative to a {0001} plane; an n type reverse breakdown voltage holding layer made of SiC and formed on the main surface of the substrate; a p type well region formed in the reverse breakdown voltage holding layer distant away from a first main surface thereof; a gate oxide film formed on the well region; an n type contact region disposed between the well region and the gate oxide film; a channel region connecting the n type contact region and the reverse breakdown voltage holding layer; and a gate electrode disposed on the gate oxide film. In a region including an interface between the channel region and the gate oxide film, a high-concentration nitrogen region is formed.
摘要翻译：即使栅极电压高，通过降低沟道迁移能力也能够降低导通电阻的MOSFET包括：由SiC制成的n型衬底，其主表面相对于{ 0001}平面; 由SiC制成的n型反向击穿电压保持层，形成在基板的主表面上; 形成在远离其第一主表面的反向击穿电压保持层中的p型阱区; 形成在所述阱区上的栅氧化膜; 设置在所述阱区域和所述栅氧化膜之间的n型接触区域; 连接n型接触区域和反向击穿电压保持层的沟道区域; 以及设置在栅氧化膜上的栅电极。在包括沟道区域和栅极氧化膜之间的界面的区域中，形成高浓度氮区域。

85. 发明申请

US20110180814A1 INSULATED GATE FIELD EFFECT TRANSISTOR 有权
标题翻译：绝缘栅场效应晶体管
公开(公告)号：US20110180814A1
公开(公告)日：2011-07-28
申请号：US13122377
申请日：2010-03-23
申请人： Shin Harada , Keiji Wada , Toru Hiyoshi
发明人： Shin Harada , Keiji Wada , Toru Hiyoshi
IPC分类号： H01L29/24
CPC分类号： H01L29/7828 , H01L21/049 , H01L29/045 , H01L29/1608 , H01L29/518 , H01L29/66068 , H01L29/7838 , H01L2924/0002 , H01L2924/00
摘要： A MOSFET, which is capable of reducing on resistance by reducing channel mobility even when a gate voltage is high, includes: an n type substrate made of SiC and having a main surface with an off angle of 50°-65° relative to a {0001} plane; an n type reverse breakdown voltage holding layer made of SiC and formed on the main surface of the substrate; a p type well region formed in the reverse breakdown voltage holding layer distant away from a first main surface thereof; a gate oxide film formed on the well region; an n type contact region disposed between the well region and the gate oxide film; a channel region connecting the n type contact region and the reverse breakdown voltage holding layer; and a gate electrode disposed on the gate oxide film. In a region including an interface between the channel region and the gate oxide film, a high-concentration nitrogen region is formed.
摘要翻译：即使栅极电压高，通过降低沟道迁移能力也能够降低导通电阻的MOSFET包括：由SiC制成的n型衬底，其主表面相对于{ 0001}平面; 由SiC制成的n型反向击穿电压保持层，形成在基板的主表面上; 形成在远离其第一主表面的反向击穿电压保持层中的p型阱区; 形成在所述阱区上的栅氧化膜; 设置在所述阱区域和所述栅氧化膜之间的n型接触区域; 连接n型接触区域和反向击穿电压保持层的沟道区域; 以及设置在栅氧化膜上的栅电极。在包括沟道区域和栅极氧化膜之间的界面的区域中，形成高浓度氮区域。

86. 发明授权

US08709950B2 Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate 有权
标题翻译：碳化硅衬底，外延晶片和碳化硅衬底的制造方法
公开(公告)号：US08709950B2
公开(公告)日：2014-04-29
申请号：US13310203
申请日：2011-12-02
申请人： Makoto Sasaki , Shin Harada
发明人： Makoto Sasaki , Shin Harada
IPC分类号： H01L21/00
CPC分类号： H01L21/02658 , H01L21/02052 , H01L21/02378 , H01L21/02529 , H01L29/1608
摘要： An SiC substrate includes the steps of preparing a base substrate having a main surface and made of SiC, washing the main surface using a first alkaline solution, and washing the main surface using a second alkaline solution after the step of washing with the first alkaline solution. The SiC substrate has the main surface, and an average of residues on the main surface are equal to or larger than 0.2 and smaller than 200 in number.
摘要翻译： SiC基板包括准备具有主表面并由SiC制成的基底基板的步骤，使用第一碱性溶液洗涤主表面，并且在用第一碱性溶液洗涤步骤之后用第二碱性溶液洗涤主表面。 SiC衬底具有主表面，主表面上的残留物的平均值等于或大于0.2且小于200。

87. 发明申请

US20120091472A1 SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：碳化硅基板
公开(公告)号：US20120091472A1
公开(公告)日：2012-04-19
申请号：US13377360
申请日：2011-02-23
申请人： Makoto Sasaki , Shin Harada , Kyoko Okita , Tomihito Miyazaki
发明人： Makoto Sasaki , Shin Harada , Kyoko Okita , Tomihito Miyazaki
IPC分类号： H01L29/24
CPC分类号： H01L29/1608 , C30B29/36 , C30B33/00 , H01L29/24
摘要： A first circular surface is provided with a first notch portion having a first shape. A second circular surface is opposite to the first circular surface and is provided with a second notch portion having a second shape. A side surface connects the first circular surface and the second circular surface to each other. The first notch portion and the second notch portion are opposite to each other. The side surface has a first depression connecting the first notch portion and the second notch portion to each other.
摘要翻译：第一圆形表面设置有具有第一形状的第一切口部分。第二圆形表面与第一圆形表面相对，并且设置有具有第二形状的第二切口部分。侧表面将第一圆形表面和第二圆形表面彼此连接。第一切口部和第二切口部彼此相对。侧面具有将第一切口部和第二切口部彼此连接的第一凹部。

88. 发明申请

US20100176403A1 SILICON CARBIDE SUBSTRATE, EPITAXIAL WAFER AND MANUFACTURING METHOD OF SILICON CARBIDE SUBSTRATE 有权
标题翻译：硅碳化硅基板，外延晶片和碳化硅基板的制造方法
公开(公告)号：US20100176403A1
公开(公告)日：2010-07-15
申请号：US12685967
申请日：2010-01-12
申请人： Makoto SASAKI , Shin Harada
发明人： Makoto SASAKI , Shin Harada
IPC分类号： H01L29/24 , H01L21/306
CPC分类号： H01L21/02658 , H01L21/02052 , H01L21/02378 , H01L21/02529 , H01L29/1608
摘要： An SiC substrate includes the steps of preparing a base substrate having a main surface and made of SiC, washing the main surface using a first alkaline solution, and washing the main surface using a second alkaline solution after the step of washing with the first alkaline solution. The SiC substrate has the main surface, and an average of residues on the main surface are equal to or larger than 0.2 and smaller than 200 in number.
摘要翻译： SiC基板包括准备具有主表面并由SiC制成的基底基板的步骤，使用第一碱性溶液洗涤主表面，并且在用第一碱性溶液洗涤步骤之后使用第二碱性溶液洗涤主表面。 SiC衬底具有主表面，主表面上的残留物的平均值等于或大于0.2且小于200。

89. 发明申请

US20130109110A1 METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造碳化硅基板的方法和制造半导体器件的方法
公开(公告)号：US20130109110A1
公开(公告)日：2013-05-02
申请号：US13807197
申请日：2011-07-06
申请人： Makoto Sasaki , Shin Harada , Satomi Itoh , Kyoko Okita
发明人： Makoto Sasaki , Shin Harada , Satomi Itoh , Kyoko Okita
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , H01L21/049 , H01L29/045 , H01L29/1608 , H01L29/66068 , H01L29/7802 , Y10S438/931
摘要： A silicon carbide substrate is made of silicon carbide. In the silicon carbide substrate, a normal line of one main surface of the silicon carbide substrate and a normal line of a {03-38} plane form an angle of 0.5° or smaller in an orthogonal projection to a plane including a direction and a direction. In this way, there can be provided the silicon carbide substrate allowing for both improvement of channel mobility of a semiconductor device and stable characteristics thereof.
摘要翻译：碳化硅衬底由碳化硅制成。在碳化硅衬底中，碳化硅衬底的一个主表面的法线和{03-38}面的法线在垂直投影中形成0.5°或更小的角度，该平面包括<01- 10>方向和<0001>方向。以这种方式，可以提供碳化硅衬底，其允许改善半导体器件的沟道迁移率和其稳定特性。

90. 发明授权

US08969103B2 Method for manufacturing silicon carbide substrate and method for manufacturing semiconductor device 有权
标题翻译：碳化硅基板的制造方法及半导体装置的制造方法
公开(公告)号：US08969103B2
公开(公告)日：2015-03-03
申请号：US13807197
申请日：2011-07-06
申请人： Makoto Sasaki , Shin Harada , Satomi Itoh , Kyoko Okita
发明人： Makoto Sasaki , Shin Harada , Satomi Itoh , Kyoko Okita
IPC分类号： H01L21/00 , H01L21/66 , H01L21/04 , H01L29/04 , H01L29/66 , H01L29/78 , H01L29/16
CPC分类号： H01L22/12 , H01L21/049 , H01L29/045 , H01L29/1608 , H01L29/66068 , H01L29/7802 , Y10S438/931
摘要： A silicon carbide substrate is made of silicon carbide. In the silicon carbide substrate, a normal line of one main surface of the silicon carbide substrate and a normal line of a {03-38} plane form an angle of 0.5° or smaller in an orthogonal projection to a plane including a direction and a direction. In this way, there can be provided the silicon carbide substrate allowing for both improvement of channel mobility of a semiconductor device and stable characteristics thereof.
摘要翻译：碳化硅衬底由碳化硅制成。在碳化硅衬底中，碳化硅衬底的一个主表面的法线和{03-38}面的法线在垂直投影中形成0.5°或更小的角度，该平面包括<01- 10>方向和<0001>方向。以这种方式，可以提供碳化硅衬底，其允许改善半导体器件的沟道迁移率和其稳定特性。

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