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81. 发明授权

US06806804B2 Magnetic detecting element having &bgr;-values selected for free magnetic layer and pinned magnetic layer 有权
标题翻译：具有选择用于自由磁性层和固定磁性层的β值的磁性检测元件
公开(公告)号：US06806804B2
公开(公告)日：2004-10-19
申请号：US10641538
申请日：2003-08-14
申请人： Masamichi Saito , Yosuke Ide , Naoya Hasegawa
发明人： Masamichi Saito , Yosuke Ide , Naoya Hasegawa
IPC分类号： H01F500
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/3272
摘要： The present invention provides a spin valve magnetic detecting element having large &Dgr;R. The positive or negative sign of the &bgr; value of a magnetic material constituting each of a first free magnetic sub-layer, a second free magnetic sub-layer and a pinned magnetic layer is defined so that the resistance values for spin-up conduction electrons are smaller than the resistance values for spin-down conduction electrons in all magnetic layers when magnetization of a free magnetic layer is changed to minimize the resistance value. In this case, the change &Dgr;R in resistance of the magnetic detecting element can be increased.
摘要翻译：本发明提供一种具有大ΔR的自旋阀磁性检测元件。定义构成第一自由磁性子层，第二自由磁性子层和钉扎磁性层中的每一个的磁性材料的β值的正或负的符号，使得自旋导通电子的电阻值为小于当自由磁性层的磁化改变以使电阻值最小化时所有磁性层中的旋转下降传导电子的电阻值。在这种情况下，可以增加磁检测元件的电阻的变化量ΔR。

82. 发明授权

US07609489B2 Magnetic sensor using NiFe alloy for pinned layer 有权
标题翻译：磁性传感器采用NiFe合金钉扎层
公开(公告)号：US07609489B2
公开(公告)日：2009-10-27
申请号：US11366002
申请日：2006-02-28
申请人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
发明人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3929
摘要： A magnetic sensor comprising: a multilayer film which has a pinned magnetic layer, the magnetization thereof being pinned in one direction, and a free magnetic layer formed on the pinned magnetic layer with a nonmagnetic material layer provided therebetween, in which current is allowed to flow in a direction perpendicular to the surfaces of the layers forming the multilayer film, wherein the pinned magnetic layer has a NiaFeb alloy layer (where a and b each indicate atomic percent, and 0
摘要翻译：一种磁传感器，包括：多层膜，其具有钉扎磁性层，其磁化被一个方向固定，并且在其上设置有非磁性材料层的固定磁性层上形成的自由磁性层，其中允许电流流动在垂直于形成多层膜的层的表面的方向上，其中钉扎磁性层具有NiaFeb合金层（其中a和b各自表示原子百分比，并且满足0

83. 发明授权

US07499249B2 Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer and method of manufacturing the same 有权
标题翻译：旋转阀-GMR元件，其中提供非金属层压层作为自由磁性层及其制造方法
公开(公告)号：US07499249B2
公开(公告)日：2009-03-03
申请号：US11409879
申请日：2006-04-24
申请人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
发明人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： H01F41/302 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3929 , H01F10/1936 , H01F10/3263 , H01F10/3268 , H01F10/3281 , H01F10/3295 , H01L43/10 , Y10T29/49021
摘要： A magnetic detecting element capable of maintaining a large ΔRA and reducing magnetostriction by changing a material of a free magnetic layer, and a method of manufacturing the same is provided. A CoMnXZ alloy layer or CoMnXRh alloy layer is formed in a free magnetic layer where an element X is at least one or two elements of Ge, Ga, In, Si, Pb, and Zn, and an element X in the latter case is at least one or two elements of Ge, Ga, In, Si, Pb, Zn, Sn, Al, and Sb. By forming the CoMnXZ alloy layer or the CoMnXRh alloy layer in the free magnetic layer, the magnetostriction of the free magnetic layer can be reduced while maintaining the large ΔRA, compared with a case where only the CoMnX alloy is formed.
摘要翻译：提供能够维持大的DeltaRA并通过改变自由磁性层的材料来减小磁致伸缩的磁性检测元件及其制造方法。在自由磁性层中形成CoMnXZ合金层或CoMnXRh合金层，其中元素X是Ge，Ga，In，Si，Pb和Zn中的至少一种或两种元素，后一种情况下的元素X在 Ge，Ga，In，Si，Pb，Zn，Sn，Al和Sb中的至少一种或两种元素。通过在自由磁性层中形成CoMnXZ合金层或CoMnXRh合金层，与仅形成CoMnX合金的情况相比，可以减小自由磁性层的磁致伸缩，同时保持较大的DeltaRA。

84. 发明申请

US20060268465A1 Magnetic detection head and method for manufacturing the same 有权
标题翻译：磁性检测头及其制造方法
公开(公告)号：US20060268465A1
公开(公告)日：2006-11-30
申请号：US11436270
申请日：2006-05-17
申请人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
发明人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , B82Y40/00 , G01R33/093 , H01F10/3263 , H01F10/3281 , H01F41/302 , H01L43/10
摘要： A magnetic detection element capable of maintaining the ΔRA at a high level and reducing the magnetostriction by improving a material for a free magnetic layer, as well as a method for manufacturing the same, is provided. The free magnetic layer includes a laminate composed of a CoMnX alloy layer formed from a metal compound represented by a compositional formula CoaMnbXc (where X represents at least one of Ge, Ga, In, Si, Pb, Zn, and Sb and a+b+c=100 atomic percent) and a CoMnZ alloy layer formed from a metal compound represented by a compositional formula CodMneZf (where Z represents at least one of Sn and Al and d+e+f=100 atomic percent). In this manner, the magnetostriction of the free magnetic layer can be reduced.
摘要翻译：提供了能够将DeltaRA保持在高电平并且通过改善自由磁性层的材料来减小磁致伸缩的磁性检测元件及其制造方法。自由磁性层包括由由组成式表示的金属化合物形成的CoMnX合金层构成的层压体，（其中X表示Ge，Ga，In，Si，Pb，Zn和Sb中的至少一种，a + b + c = 100原子％）和由组成式Co < （其中Z表示Sn和Al中的至少一种，d + e + f = 100原子％）。以这种方式，可以减小自由磁性层的磁致伸缩。

85. 发明申请

US20060198062A1 CPP magnetic detectig device containing NiFe alloy on free layer thereof 失效
标题翻译：在其自由层上含有NiFe合金的CPP磁检测装置
公开(公告)号：US20060198062A1
公开(公告)日：2006-09-07
申请号：US11365697
申请日：2006-02-28
申请人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
发明人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/127 , G11B5/33 , H01F10/1936 , H01F10/3281 , H01F10/3295 , H01L43/10
摘要： A magnetic detecting device having a large ΔRA value is provided. A free magnetic layer has a three layer structure in which a CoFe layer, a NiaFeb alloy layer (here, a and b are represented by at %, and satisfy the relationship of 47≦a≦77 and a+b=100), and a CoFe layer are laminated. In addition, pinned magnetic layers have heusler alloy layers, which are made of a heusler alloy such as a Co2MnGe alloy. Accordingly, the product ΔRA of a magnetic resistance variation ΔR of the magnetic detecting device and an area A of the device can have a value of 5 mΩμm2 or more.
摘要翻译：提供具有大ΔRA值的磁检测装置。自由磁性层具有三层结构，其中CoFe层，NiBaFeBb合金层（这里a和b以％表示，满足 47 <= a <= 77和a + b = 100的关系）和CoFe层被层压。此外，固定磁性层具有由诸如Co 2 MnGe合金的heusler合金制成的heusler合金层。因此，磁检测装置的磁阻变化量ΔR的乘积DeltaRA和装置的面积A可以具有5m 2以上的值。

86. 发明申请

US20060198061A1 Magnetic detectible head comprising free layer 有权
标题翻译：磁性可检测头包括自由层
公开(公告)号：US20060198061A1
公开(公告)日：2006-09-07
申请号：US11364533
申请日：2006-02-27
申请人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
发明人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/3932 , B82Y25/00 , G11B5/3903 , H01F10/1936 , H01F10/3281 , H01F10/3295 , H01L43/10
摘要： There is provided a magnetic detecting element having a large ΔRA. A free magnetic layer has a three layer structure in which a CoFe layer, an NiaFeb alloy layer (where a and b are represented by at %, 0≦a≦25, and a+b=100), and a CoFe layer are laminated from the bottom. If the at % of Ni in an NiFe alloy that exists in the free magnetic layer is in this range, a spin-dependent bulk scattering coefficient β increases, and the product ΔRA of the resistance variation of the magnetic detecting element and the area of the element can be made increased.
摘要翻译：提供了具有大DeltaRA的磁检测元件。自由磁性层具有三层结构，其中CoFe层，Ni / Fe合金层（其中a和b表示为％，0 <= a <= 25，a + b = 100），CoFe层从底部层叠。如果存在于自由磁性层中的NiFe合金中的Ni的at％在该范围内，则自旋相关体散射系数β增加，并且磁检测元件的电阻变化的乘积DeltaRA与元素可以增加。

87. 发明申请

US20060188750A1 Magnetic sensing element including free layer having gradient composition and method for manufacturing the same 有权
公开(公告)号：US20060188750A1
公开(公告)日：2006-08-24
申请号：US11352958
申请日：2006-02-13
申请人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
发明人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
IPC分类号： C23C14/00 , G11B5/33 , G11B5/127
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , C23C14/025 , C23C14/165 , C23C14/584 , G11B5/3903 , H01F10/1936 , H01F10/3268 , H01F41/302 , Y10T428/1121 , Y10T428/115 , Y10T428/1193
摘要： A magnetic sensing element which allows a high reproduction output and reduction in asymmetry of reproduction waveform to become mutually compatible, as well as a method for manufacturing the same, is provided. In the inside of a second pinned magnetic layer and a free magnetic layer, the atomic percentage of an element Z is decreased in a region close to a non-magnetic material layer. Consequently, the ferromagnetic coupling magnetic field due to magnetostatic coupling (topological coupling) between the pinned magnetic layer and the free magnetic layer can be reduced. At the same time, in a region at a distance from the non-magnetic material layer, the atomic percentage of an element Z is increased, a spin-dependent bulk scattering coefficient is increased, and a product of the amount of change in magnetic resistance and the element area of the magnetic sensing element can be maintained at a high level.

88. 发明申请

US20050280958A1 Dual type magnetic sensing element wherein deltaRxA in upstream part in flow direction of electric current is smaller than deltaRxA in downstream part 失效
标题翻译：双向磁传感元件，其中电流流动方向上游部分的δRxA小于下游部分的δRxA
公开(公告)号：US20050280958A1
公开(公告)日：2005-12-22
申请号：US11155289
申请日：2005-06-17
申请人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Masahiko Ishizone
发明人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Masahiko Ishizone
IPC分类号： G11B5/127 , G11B5/265 , G11B5/33
CPC分类号： G11B5/265 , G11B5/127
摘要： In a magnetic sensing element, the amounts of spin-dependent bulk scattering in the upstream part of a multilayer film and in the downstream part of the multilayer film are controlled to be asymmetric. Thus, a value ΔR×A, which represents the variation in magnetoresistance×element area, for the upstream part of the multilayer film is controlled so as to be smaller than the value ΔR×A for the downstream part of the multilayer film.
摘要翻译：在磁传感元件中，多层膜的上游部分和多层膜的下游部分中的自旋依赖性体散射量被控制为不对称。因此，对于多层膜的上游部分，表示代表磁阻效应区域的变化的值ΔRxA被控制为小于多层膜的下游部分的值ΔRxA。

89. 发明授权

US06678128B2 Exchange coupling film and electroresistive sensor using the same 有权
标题翻译：交换耦合膜和电阻传感器使用它
公开(公告)号：US06678128B2
公开(公告)日：2004-01-13
申请号：US09833756
申请日：2001-04-11
申请人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
发明人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , H01F10/123 , H01F10/3268 , H01F41/302 , Y10T428/1171
摘要： An exchange coupling film has an antiferromagnetic layer, a pinned magnetic layer, and a seed layer provided on the side of the antiferromagnetic layer 4 opposite to the pinned magnetic layer. The seed layer has a crystalline structure constituted mainly by face-centered cubic crystals with (111) planes substantially aligned. The seed layer is preferably non-magnetic. A laminate structure including the antiferromagnetic layer and a free layer inclusive of the intervening layers have crystalline orientations with their (111) planes substantially aligned, so that large crystal grains and, hence, large ratio of resistance variation can be achieved.
摘要翻译：交换耦合膜具有反铁磁层，钉扎磁性层和设置在反铁磁层4的与被钉扎的磁性层相对的一侧的种子层。种子层具有主要由面心立方晶体构成的晶体结构，其中（111）面基本对准。种子层优选是非磁性的。包括反铁磁层和包含中间层的自由层的层压结构具有其（111）面基本上取向的结晶取向，从而可以获得大的晶粒，从而实现大的电阻变化比。

90. 发明授权

US06635366B2 Spin valve thin film magnetic element and thin film magnetic head 失效
标题翻译：旋转阀薄膜磁性元件和薄膜磁头
公开(公告)号：US06635366B2
公开(公告)日：2003-10-21
申请号：US09728069
申请日：2000-11-30
申请人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Naoya Hasegawa
发明人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Naoya Hasegawa
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , Y10S428/90 , Y10T428/1107 , Y10T428/1193 , Y10T428/24942
摘要： A spin valve thin film magnetic element is provided composed of an antiferromagnetic layer; a pinned magnetic layer, formed in contact with the antiferromagnetic layer, in which the direction of magnetization is pinned by an exchange coupling magnetic field with the antiferromagnetic layer; a nonmagnetic conductive layer in contact with the pinned magnetic layer; and a free magnetic layer in contact with the nonmagnetic conductive layer, wherein the free magnetic layer is composed of a nonmagnetic intermediate layer, and the first and second free magnetic layers holding the nonmagnetic intermediate layer therebetween; the first free magnetic layer and the second free magnetic layer are antiferromagnetically coupled to enter the ferrimagnetic state; and a resistivity of the first free magnetic layer in the side farther from the nonmagnetic intermediate layer is higher than a resistivity of the second free magnetic layer in the nonmagnetic intermediate layer side. According to the spin valve thin film magnetic element, it is possible to increase the detection sensitivity for the external magnetic field, to reduce the shunt loss of the sensing current, and to increase the rate of change in magnetoresistance.
摘要翻译：提供由反铁磁层构成的自旋阀薄膜磁性元件; 与反铁磁层接触形成的钉扎磁性层，其中磁化方向通过与反铁磁层的交换耦合磁场固定; 与被固定的磁性层接触的非磁性导电层; 以及与非磁性导电层接触的自由磁性层，其中所述自由磁性层由非磁性中间层构成，所述第一和第二自由磁性层在其间保持非磁性中间层; 第一自由磁性层和第二自由磁性层被反铁磁耦合以进入亚铁磁状态; 并且离非磁性中间层更远的一侧的第一自由磁性层的电阻率高于非磁性中间层侧的第二自由磁性层的电阻率。根据自旋阀薄膜磁性元件，可以增加外部磁场的检测灵敏度，减小感测电流的并联损耗，并增加磁阻的变化率。

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